|
Poly Depletion Effect
Polysilicon depletion effect is the phenomenon in which unwanted variation of threshold voltage of the MOSFET devices using polysilicon as gate material is observed, leading to unpredicted behavior of the electronic circuit. Because of this variation High-κ dielectric, High-k Dielectric Metal Gates (HKMG) were introduced to solve the issue. Polycrystalline silicon, also called polysilicon, is a material consisting of small silicon crystals. The latter differs from Crystalline silicon, mocrystalline silicon used for Semiconductor device, semiconductor electronics and solar cells, and from amorphous silicon, used for thin film devices and solar cells. Gate material choice The gate contact may be of polysilicon or metal, previously polysilicon was chosen over metal because the interfacing between polysilicon and gate oxide (Silicon dioxide, SiO2) was favorable. But the conductivity of the poly-silicon layer is very low and because of this low conductivity, the charge accumulation is ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Threshold Voltage
The threshold voltage, commonly abbreviated as Vth or VGS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (VGS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency. When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead. This is somewhat confusing since ''pinch off'' applied to insulated-gate field-effect transistor (IGFET) refers to the channel pinching that leads to current saturation behaviour under high source–drain bias, even though the current is never off. Unlike ''pinch off'', the term ''threshold voltage'' is unambiguous and refers to the same concept in any field-effect transistor. Basic principles In n-channel ''enhancement-mode'' devices, a conductive channel does not exist naturally within the transistor, and a positive gate-to-source voltage is necessary to create one s ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Ions
An ion () is an atom or molecule with a net electrical charge. The charge of an electron is considered to be negative by convention and this charge is equal and opposite to the charge of a proton, which is considered to be positive by convention. The net charge of an ion is not zero because its total number of electrons is unequal to its total number of protons. A cation is a positively charged ion with fewer electrons than protons while an anion is a negatively charged ion with more electrons than protons. Opposite electric charges are pulled towards one another by electrostatic force, so cations and anions attract each other and readily form ionic compounds. Ions consisting of only a single atom are termed atomic or monatomic ions, while two or more atoms form molecular ions or polyatomic ions. In the case of physical ionization in a fluid (gas or liquid), "ion pairs" are created by spontaneous molecule collisions, where each generated pair consists of a free electron an ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Transistors
upright=1.4, gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (pink). A transistor is a semiconductor device used to Electronic amplifier, amplify or electronic switch, switch electrical signals and electrical power, power. The transistor is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more are found embedded in integrated circuits. Austro-Hungarian physicist Julius Edgar Lilienfeld proposed the concept of a field-effect transistor in 1926, but it was not possible to actually cons ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
DIBL
Drain-induced barrier lowering (DIBL) is a short-channel effect in MOSFETs referring originally to a reduction of threshold voltage of the transistor at higher drain voltages. In a classic planar field-effect transistor with a long channel, the bottleneck in channel formation occurs far enough from the drain contact that it is electrostatically shielded from the drain by the combination of the substrate and gate, and so classically the threshold voltage was independent of drain voltage. In short-channel devices this is no longer true: The drain is close enough to gate the channel, and so a high drain voltage can open the bottleneck and turn on the transistor prematurely. The origin of the threshold decrease can be understood as a consequence of charge neutrality: the Yau charge-sharing model. The combined charge in the depletion region of the device and that in the channel of the device is balanced by three electrode charges: the gate, the source and the drain. As drain voltage ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Polysilicon
Polycrystalline silicon, or multicrystalline silicon, also called polysilicon, poly-Si, or mc-Si, is a high purity, polycrystalline form of silicon, used as a raw material by the solar photovoltaic and electronics industry. Polysilicon is produced from metallurgical grade silicon by a chemical purification process, called the Siemens process. This process involves distillation of volatile silicon compounds, and their decomposition into silicon at high temperatures. An emerging, alternative process of refinement uses a fluidized bed reactor. The photovoltaic industry also produces upgraded metallurgical-grade silicon (UMG-Si), using metallurgical instead of chemical purification processes. When produced for the electronics industry, polysilicon contains impurity levels of less than one part per billion (ppb), while polycrystalline solar grade silicon (SoG-Si) is generally less pure. A few companies from China, Germany, Japan, Korea and the United States, such as GCL-Poly, Wacker ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Threshold Voltage
The threshold voltage, commonly abbreviated as Vth or VGS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (VGS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency. When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead. This is somewhat confusing since ''pinch off'' applied to insulated-gate field-effect transistor (IGFET) refers to the channel pinching that leads to current saturation behaviour under high source–drain bias, even though the current is never off. Unlike ''pinch off'', the term ''threshold voltage'' is unambiguous and refers to the same concept in any field-effect transistor. Basic principles In n-channel ''enhancement-mode'' devices, a conductive channel does not exist naturally within the transistor, and a positive gate-to-source voltage is necessary to create one s ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Fermi Level Pinning
Enrico Fermi (; 29 September 1901 – 28 November 1954) was an Italian (later naturalized American) physicist and the creator of the world's first nuclear reactor, the Chicago Pile-1. He has been called the "architect of the nuclear age" and the "architect of the atomic bomb". He was one of very few physicists to excel in both theoretical physics and experimental physics. Fermi was awarded the 1938 Nobel Prize in Physics for his work on induced radioactivity by neutron bombardment and for the discovery of transuranium elements. With his colleagues, Fermi filed several patents related to the use of nuclear power, all of which were taken over by the US government. He made significant contributions to the development of statistical mechanics, quantum theory, and nuclear and particle physics. Fermi's first major contribution involved the field of statistical mechanics. After Wolfgang Pauli formulated his exclusion principle in 1925, Fermi followed with a paper in which he applied ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
CMOS
Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss", ) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including CMOS BIOS), and other digital logic circuits. CMOS technology is also used for analog circuits such as image sensors (CMOS sensors), data converters, RF circuits ( RF CMOS), and highly integrated transceivers for many types of communication. The CMOS process was originally conceived by Frank Wanlass at Fairchild Semiconductor and presented by Wanlass and Chih-Tang Sah at the International Solid-State Circuits Conference in 1963. Wanlass later filed US patent 3,356,858 for CMOS circuitry and it was granted in 1967. commercialized the technology with the trademark ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Hafnium Oxide
Hafnium(IV) oxide is the inorganic compound with the formula . Also known as hafnium dioxide or hafnia, this colourless solid is one of the most common and stable compounds of hafnium. It is an electrical insulator with a band gap of 5.3~5.7 eV. Hafnium dioxide is an intermediate in some processes that give hafnium metal. Hafnium(IV) oxide is quite inert. It reacts with strong acids such as concentrated sulfuric acid and with strong bases. It dissolves slowly in hydrofluoric acid to give fluorohafnate anions. At elevated temperatures, it reacts with chlorine in the presence of graphite or carbon tetrachloride to give hafnium tetrachloride. Structure Hafnia typically adopts the same structure as zirconia (ZrO2). Unlike TiO2, which features six-coordinate Ti in all phases, zirconia and hafnia consist of seven-coordinate metal centres. A variety of other crystalline phases have been experimentally observed, including cubic fluorite (Fmm), tetragonal (P42/nmc), monoclinic (P21/c) an ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Dielectric
In electromagnetism, a dielectric (or dielectric medium) is an electrical insulator that can be polarised by an applied electric field. When a dielectric material is placed in an electric field, electric charges do not flow through the material as they do in an electrical conductor, because they have no loosely bound, or free, electrons that may drift through the material, but instead they shift, only slightly, from their average equilibrium positions, causing dielectric polarisation. Because of dielectric polarisation, positive charges are displaced in the direction of the field and negative charges shift in the direction opposite to the field (for example, if the field is moving parallel to the positive ''x'' axis, the negative charges will shift in the negative ''x'' direction). This creates an internal electric field that reduces the overall field within the dielectric itself. If a dielectric is composed of weakly bonded molecules, those molecules not only become polaris ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Work Function
In solid-state physics, the work function (sometimes spelt workfunction) is the minimum thermodynamic work (i.e., energy) needed to remove an electron from a solid to a point in the vacuum immediately outside the solid surface. Here "immediately" means that the final electron position is far from the surface on the atomic scale, but still too close to the solid to be influenced by ambient electric fields in the vacuum. The work function is not a characteristic of a bulk material, but rather a property of the surface of the material (depending on crystal face and contamination). Definition The work function for a given surface is defined by the difference :W = -e\phi - E_, where is the charge of an electron, is the electrostatic potential in the vacuum nearby the surface, and is the Fermi level (electrochemical potential of electrons) inside the material. The term is the energy of an electron at rest in the vacuum nearby the surface. In practice, one directly controls ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
.jpg "Click for more on -> Transistors"){kind=spacer}
