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1T-SRAM
1T-SRAM is a pseudo-static random-access memory (PSRAM) technology introduced by MoSys, Inc. in September 1998, which offers a high-density alternative to traditional static random-access memory (SRAM) in embedded memory applications. Mosys uses a single-transistor storage cell (bit cell) like dynamic random-access memory (DRAM), but surrounds the bit cell with control circuitry that makes the memory functionally equivalent to SRAM (the controller hides all DRAM-specific operations such as precharging and refresh). 1T-SRAM (and PSRAM in general) has a standard single-cycle SRAM interface and appears to the surrounding logic just as an SRAM would. Due to its one-transistor bit cell, 1T-SRAM is smaller than conventional (six-transistor, or "6T") SRAM, and closer in size and density to embedded DRAM (eDRAM). At the same time, 1T-SRAM has performance comparable to SRAM at multi-megabit densities, uses less power than eDRAM and is manufactured in a standard CMOS logic process like co ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MoSys
MoSys, Inc., originally Monolithic System Technology (MoST), was a fabless semiconductor design company founded in 1991. The company primarily designed memory chips and were especially known for their Multibank DRAM and 1T-SRAM technologies—the latter used on Nintendo's Wii and GameCube video game consoles. History MoSys was incorporated in San Jose, California, on September 16, 1991, as Monolithic System Technology. The company was co-founded by Fu-Chieh Hsu, who also served as its chairman and president until December 2004. Joined by Fu-Chieh were Wingyu Leung and Gary Banta, both vice presidents of design engineering. The initial design team staffed engineers poached from Integrated Device Technology, ISSI, Rambus, and Plus Logic. By 1994, the company had received $7.5 million in venture funding. The company's first major product was a specialized type of dynamic random-access memory that Monolithic termed Multibank DRAM (MDRAM). The initial entry in this series of ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Nintendo GameCube
The is a home video game console developed and released by Nintendo in Japan on September 14, 2001, in North America on November 18, 2001, and in PAL territories in 2002. It is the successor to the Nintendo 64 (1996), and predecessor of the Wii (2006). In the sixth generation of video game consoles, the GameCube competed with Sony's PlayStation 2 and Microsoft's Xbox. Flagship games include '' Super Smash Bros. Melee'', ''Luigi's Mansion'', ''Super Mario Sunshine'', ''Metroid Prime'', '' Mario Kart: Double Dash'', ''Pikmin'', ''Pikmin 2'', '' The Legend of Zelda: The Wind Waker'', ''Chibi-Robo!'', and ''Animal Crossing''. Development was enabled by the 1997 formation of computer graphics company ArtX, of former SGI employees who had created the Nintendo 64, and which was later acquired by ATI to produce the GameCube's GPU. In May 1999, Nintendo announced codename Dolphin, released in 2001 as the GameCube. It is Nintendo's first console to use optical discs instead of ROM cartrid ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
PSRAM
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal-oxide-semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. The electric charge on the capacitors gradually leaks away; without intervention the data on the capacitor would soon be lost. To prevent this, DRAM requires an external ''memory refresh'' circuit which periodically rewrites the data in the capacitors, restoring them to their original charge. This refresh process is the defining characteristic of dynamic random-access memory, in contrast to static random-access memory (SRAM ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Static Random-access Memory
Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed. The term ''static'' differentiates SRAM from DRAM (''dynamic'' random-access memory) — SRAM will hold its data permanently in the presence of power, while data in DRAM decays in seconds and thus must be periodically refreshed. SRAM is faster than DRAM but it is more expensive in terms of silicon area and cost; it is typically used for the cache and internal registers of a CPU while DRAM is used for a computer's main memory. History Semiconductor bipolar SRAM was invented in 1963 by Robert Norman at Fairchild Semiconductor. MOS SRAM was invented in 1964 by John Schmidt at Fairchild Semiconductor. It was a 64-bit MOS p-channel SRAM. The SRAM was the main driver behind any new CMOS-based technology fabrication process since 1959 when CMOS was invented. In 1965 ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Dynamic Random-access Memory
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal-oxide-semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. The electric charge on the capacitors gradually leaks away; without intervention the data on the capacitor would soon be lost. To prevent this, DRAM requires an external ''memory refresh'' circuit which periodically rewrites the data in the capacitors, restoring them to their original charge. This refresh process is the defining characteristic of dynamic random-access memory, in contrast to static random-access memory (SRAM ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
EDRAM
Embedded DRAM (eDRAM) is dynamic random-access memory (DRAM) integrated on the same die or multi-chip module (MCM) of an application-specific integrated circuit (ASIC) or microprocessor. eDRAM's cost-per-bit is higher when compared to equivalent standalone DRAM chips used as external memory, but the performance advantages of placing eDRAM onto the same chip as the processor outweigh the cost disadvantages in many applications. In performance and size, eDRAM is positioned between level 3 cache and conventional DRAM on the memory bus, and effectively functions as a level 4 cache, though architectural descriptions may not explicitly refer to it in those terms. Embedding memory on the ASIC or processor allows for much wider buses and higher operation speeds, and due to much higher density of DRAM in comparison to SRAM, larger amounts of memory can be installed on smaller chips if eDRAM is used instead of eSRAM. eDRAM requires additional fab process steps compared with embedded SR ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Photomask
A photomask is an opaque plate with holes or transparencies that allow light to shine through in a defined pattern. They are commonly used in photolithography and the production of integrated circuits (ICs or "chips") in particular. Masks are used to produce a pattern on a substrate, normally a thin slice of silicon known as a wafer in the case of chip manufacturing. Several masks are used in turn, each one reproducing a layer of the completed design, and together they are known as a mask set. Previously, photomasks used to be produced manually by using rubylith and mylar. As complexity continued to grow, manual processing of any sort became difficult. This was solved with the introduction of the optical pattern generator which automated the process of producing the initial large-scale pattern, and the step-and-repeat cameras that automated the copying of the pattern into a multiple-IC mask. The intermediate masks are known as reticles, and were initially copied to production mas ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Semiconductor Device Fabrication
Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuit (IC) chips such as modern computer processors, microcontrollers, and memory chips such as NAND flash and DRAM that are present in everyday electrical and electronics, electronic devices. It is a multiple-step sequence of Photolithography, photolithographic and chemical processing steps (such as surface passivation, thermal oxidation, planar process, planar diffusion and p–n junction isolation, junction isolation) during which electronic circuits are gradually created on a wafer (electronics), wafer made of pure semiconducting material. Silicon is almost always used, but various compound semiconductors are used for specialized applications. The entire manufacturing process takes time, from start to packaged chips ready for shipment, at least six to eight weeks (tape-out only, not including the circuit design) and is performed in highly specialized semiconduct ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Silicon On Insulator
In semiconductor manufacturing, silicon on insulator (SOI) technology is fabrication of silicon semiconductor devices in a layered silicon–insulator–silicon substrate, to reduce parasitic capacitance within the device, thereby improving performance. SOI-based devices differ from conventional silicon-built devices in that the silicon junction is above an electrical insulator, typically silicon dioxide or sapphire (these types of devices are called silicon on sapphire, or SOS). The choice of insulator depends largely on intended application, with sapphire being used for high-performance radio frequency (RF) and radiation-sensitive applications, and silicon dioxide for diminished short-channel effects in other microelectronics devices. The insulating layer and topmost silicon layer also vary widely with application. Industry need SOI technology is one of several manufacturing strategies to allow the continued miniaturization of microelectronic devices, colloquially referred to as ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Nintendo
is a Japanese Multinational corporation, multinational video game company headquartered in Kyoto, Japan. It develops video games and video game consoles. Nintendo was founded in 1889 as by craftsman Fusajiro Yamauchi and originally produced handmade playing cards. After venturing into various lines of business during the 1960s and acquiring a legal status as a public company, Nintendo distributed its first console, the Color TV-Game, in 1977. It gained international recognition with the release of ''Donkey Kong (video game), Donkey Kong'' in 1981 and the Nintendo Entertainment System and ''Super Mario Bros.'' in 1985. Since then, Nintendo has produced some of the most successful consoles in the video game industry, such as the Game Boy, the Super Nintendo Entertainment System, the Nintendo DS, the Wii, and the Nintendo Switch, Switch. It has created numerous major franchises, including ''Mario (franchise), Mario'', ''Donkey Kong'', ''The Legend of Zelda'', ''Pokémon'', '' ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
CPU Cache
A CPU cache is a hardware cache used by the central processing unit (CPU) of a computer to reduce the average cost (time or energy) to access data from the main memory. A cache is a smaller, faster memory, located closer to a processor core, which stores copies of the data from frequently used main memory locations. Most CPUs have a hierarchy of multiple cache levels (L1, L2, often L3, and rarely even L4), with different instruction-specific and data-specific caches at level 1. The cache memory is typically implemented with static random-access memory (SRAM), in modern CPUs by far the largest part of them by chip area, but SRAM is not always used for all levels (of I- or D-cache), or even any level, sometimes some latter or all levels are implemented with eDRAM. Other types of caches exist (that are not counted towards the "cache size" of the most important caches mentioned above), such as the translation lookaside buffer (TLB) which is part of the memory management unit (MMU) w ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
