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Random-access memory (RAM; ) is a form of
computer memory In computing, memory is a device or system that is used to store information for immediate use in a computer or related computer hardware and digital electronic devices. The term ''memory'' is often synonymous with the term '' primary storag ...
that can be read and changed in any order, typically used to store working
data In the pursuit of knowledge, data (; ) is a collection of discrete values that convey information, describing quantity, quality, fact, statistics, other basic units of meaning, or simply sequences of symbols that may be further interpret ...
and machine code. A
random-access Random access (more precisely and more generally called direct access) is the ability to access an arbitrary element of a sequence in equal time or any datum from a population of addressable elements roughly as easily and efficiently as any othe ...
memory device allows
data In the pursuit of knowledge, data (; ) is a collection of discrete values that convey information, describing quantity, quality, fact, statistics, other basic units of meaning, or simply sequences of symbols that may be further interpret ...
items to be read or written in almost the same amount of time irrespective of the physical location of data inside the memory, in contrast with other direct-access data storage media (such as hard disks, CD-RWs, DVD-RWs and the older magnetic tapes and drum memory), where the time required to read and write data items varies significantly depending on their physical locations on the recording medium, due to mechanical limitations such as media rotation speeds and arm movement. RAM contains multiplexing and
demultiplexing In telecommunications and computer networking, multiplexing (sometimes contracted to muxing) is a method by which multiple analog or digital signals are combined into one signal over a shared medium. The aim is to share a scarce resource - a ...
circuitry, to connect the data lines to the addressed storage for reading or writing the entry. Usually more than one bit of storage is accessed by the same address, and RAM devices often have multiple data lines and are said to be "8-bit" or "16-bit", etc. devices. In today's technology, random-access memory takes the form of
integrated circuit An integrated circuit or monolithic integrated circuit (also referred to as an IC, a chip, or a microchip) is a set of electronic circuits on one small flat piece (or "chip") of semiconductor material, usually silicon. Large numbers of tiny ...
(IC) chips with
MOS MOS or Mos may refer to: Technology * MOSFET (metal–oxide–semiconductor field-effect transistor), also known as the MOS transistor * Mathematical Optimization Society * Model output statistics, a weather-forecasting technique * MOS (fil ...
(metal-oxide-semiconductor) memory cells. RAM is normally associated with volatile types of memory where stored information is lost if power is removed. The two main types of volatile random-access
semiconductor memory Semiconductor memory is a digital electronic semiconductor device used for digital data storage, such as computer memory. It typically refers to devices in which data is stored within metal–oxide–semiconductor (MOS) memory cells on a si ...
are static random-access memory (SRAM) and
dynamic random-access memory Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal-ox ...
(DRAM). Non-volatile RAM has also been developed and other types of non-volatile memories allow random access for read operations, but either do not allow write operations or have other kinds of limitations on them. These include most types of ROM and a type of
flash memory Flash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use ...
called '' NOR-Flash''. Use of semiconductor RAM dated back to 1965, when IBM introduced the monolithic (single-chip) 16-bit SP95 SRAM chip for their System/360 Model 95 computer, and Toshiba used discrete DRAM memory cells for its 180-bit Toscal BC-1411 electronic calculator, both based on bipolar transistors. While it offered improved performance over
magnetic-core memory Magnetic-core memory was the predominant form of random-access computer memory for 20 years between about 1955 and 1975. Such memory is often just called core memory, or, informally, core. Core memory uses toroids (rings) of a hard magnet ...
, bipolar DRAM could not compete with the lower price of the then-dominant magnetic-core memory. MOS memory, based on MOS transistors, was developed in the late 1960s, and was the basis for all early commercial semiconductor memory. The first commercial DRAM IC chip, the 1K Intel 1103, was introduced in October 1970. Synchronous dynamic random-access memory (SDRAM) later debuted with the
Samsung The Samsung Group (or simply Samsung) ( ko, 삼성 ) is a South Korean multinational manufacturing conglomerate headquartered in Samsung Town, Seoul, South Korea. It comprises numerous affiliated businesses, most of them united under the ...
KM48SL2000 chip in 1992.


History

Early computers used
relay A relay Electromechanical relay schematic showing a control coil, four pairs of normally open and one pair of normally closed contacts An automotive-style miniature relay with the dust cover taken off A relay is an electrically operated switch ...
s,
mechanical counter Mechanical counters are digital counters built using mechanical components. Long before electronics became common, mechanical devices were used to count events. They typically consist of a series of disks mounted on an axle, with the digits zero ...
s or delay lines for main memory functions. Ultrasonic delay lines were serial devices which could only reproduce data in the order it was written. Drum memory could be expanded at relatively low cost but efficient retrieval of memory items required knowledge of the physical layout of the drum to optimize speed. Latches built out of
vacuum tube A vacuum tube, electron tube, valve (British usage), or tube (North America), is a device that controls electric current flow in a high vacuum between electrodes to which an electric potential difference has been applied. The type known as ...
triodes, and later, out of discrete transistors, were used for smaller and faster memories such as registers. Such registers were relatively large and too costly to use for large amounts of data; generally only a few dozen or few hundred bits of such memory could be provided. The first practical form of random-access memory was the Williams tube starting in 1947. It stored data as electrically charged spots on the face of a cathode-ray tube. Since the electron beam of the CRT could read and write the spots on the tube in any order, memory was random access. The capacity of the Williams tube was a few hundred to around a thousand bits, but it was much smaller, faster, and more power-efficient than using individual vacuum tube latches. Developed at the
University of Manchester The University of Manchester is a public university, public research university in Manchester, England. The main campus is south of Manchester city centre, Manchester City Centre on Wilmslow Road, Oxford Road. The university owns and operates majo ...
in England, the Williams tube provided the medium on which the first electronically stored program was implemented in the Manchester Baby computer, which first successfully ran a program on 21 June 1948. In fact, rather than the Williams tube memory being designed for the Baby, the Baby was a
testbed A testbed (also spelled test bed) is a platform for conducting rigorous, transparent, and replicable testing of scientific theories, computational tools, and new technologies. The term is used across many disciplines to describe experimental res ...
to demonstrate the reliability of the memory.
Magnetic-core memory Magnetic-core memory was the predominant form of random-access computer memory for 20 years between about 1955 and 1975. Such memory is often just called core memory, or, informally, core. Core memory uses toroids (rings) of a hard magnet ...
was invented in 1947 and developed up until the mid-1970s. It became a widespread form of random-access memory, relying on an array of magnetized rings. By changing the sense of each ring's magnetization, data could be stored with one bit stored per ring. Since every ring had a combination of address wires to select and read or write it, access to any memory location in any sequence was possible. Magnetic core memory was the standard form of
computer memory In computing, memory is a device or system that is used to store information for immediate use in a computer or related computer hardware and digital electronic devices. The term ''memory'' is often synonymous with the term '' primary storag ...
system until displaced by
solid-state Solid state, or solid matter, is one of the four fundamental states of matter. Solid state may also refer to: Electronics * Solid-state electronics, circuits built of solid materials * Solid state ionics, study of ionic conductors and their ...
MOS MOS or Mos may refer to: Technology * MOSFET (metal–oxide–semiconductor field-effect transistor), also known as the MOS transistor * Mathematical Optimization Society * Model output statistics, a weather-forecasting technique * MOS (fil ...
( metal–oxide–silicon)
semiconductor memory Semiconductor memory is a digital electronic semiconductor device used for digital data storage, such as computer memory. It typically refers to devices in which data is stored within metal–oxide–semiconductor (MOS) memory cells on a si ...
in
integrated circuit An integrated circuit or monolithic integrated circuit (also referred to as an IC, a chip, or a microchip) is a set of electronic circuits on one small flat piece (or "chip") of semiconductor material, usually silicon. Large numbers of tiny ...
s (ICs) during the early 1970s. Prior to the development of integrated
read-only memory Read-only memory (ROM) is a type of non-volatile memory used in computers and other electronic devices. Data stored in ROM cannot be electronically modified after the manufacture of the memory device. Read-only memory is useful for storing ...
(ROM) circuits, ''permanent'' (or ''read-only'') random-access memory was often constructed using diode matrices driven by
address decoder In digital electronics, an address decoder is a binary decoder that has two or more inputs for address bits and one or more outputs for device selection signals. When the address for a particular device appears on the address inputs, the decoder as ...
s, or specially wound core rope memory planes.
Semiconductor memory Semiconductor memory is a digital electronic semiconductor device used for digital data storage, such as computer memory. It typically refers to devices in which data is stored within metal–oxide–semiconductor (MOS) memory cells on a si ...
began in the 1960s with bipolar memory, which used bipolar transistors. While it improved performance, it could not compete with the lower price of magnetic core memory.


MOS RAM

The invention of the
MOSFET The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which d ...
(metal-oxide-semiconductor field-effect transistor), also known as the MOS transistor, by Mohamed M. Atalla and Dawon Kahng at
Bell Labs Nokia Bell Labs, originally named Bell Telephone Laboratories (1925–1984), then AT&T Bell Laboratories (1984–1996) and Bell Labs Innovations (1996–2007), is an American industrial research and scientific development company owned by mul ...
in 1959, led to the development of metal-oxide-semiconductor (MOS) memory by John Schmidt at Fairchild Semiconductor in 1964. In addition to higher performance, MOS
semiconductor memory Semiconductor memory is a digital electronic semiconductor device used for digital data storage, such as computer memory. It typically refers to devices in which data is stored within metal–oxide–semiconductor (MOS) memory cells on a si ...
was cheaper and consumed less power than magnetic core memory. The development of silicon-gate MOS integrated circuit (MOS IC) technology by Federico Faggin at Fairchild in 1968 enabled the production of MOS memory chips. MOS memory overtook magnetic core memory as the dominant memory technology in the early 1970s. An integrated bipolar static random-access memory (SRAM) was invented by Robert H. Norman at Fairchild Semiconductor in 1963. It was followed by the development of MOS SRAM by John Schmidt at Fairchild in 1964. SRAM became an alternative to magnetic-core memory, but required six MOS transistors for each bit of data. Commercial use of SRAM began in 1965, when IBM introduced the SP95 memory chip for the System/360 Model 95.
Dynamic random-access memory Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal-ox ...
(DRAM) allowed replacement of a 4 or 6-transistor latch circuit by a single transistor for each memory bit, greatly increasing memory density at the cost of volatility. Data was stored in the tiny capacitance of each transistor, and had to be periodically refreshed every few milliseconds before the charge could leak away. Toshiba's Toscal BC-1411 electronic calculator, which was introduced in 1965, used a form of capacitive bipolar DRAM, storing 180-bit data on discrete memory cells, consisting of
germanium Germanium is a chemical element with the symbol Ge and atomic number 32. It is lustrous, hard-brittle, grayish-white and similar in appearance to silicon. It is a metalloid in the carbon group that is chemically similar to its group neighbors ...
bipolar transistors and capacitors. While it offered improved performance over magnetic-core memory, bipolar DRAM could not compete with the lower price of the then dominant magnetic-core memory. MOS technology is the basis for modern DRAM. In 1966, Dr. Robert H. Dennard at the IBM Thomas J. Watson Research Center was working on MOS memory. While examining the characteristics of MOS technology, he found it was capable of building
capacitor A capacitor is a device that stores electrical energy in an electric field by virtue of accumulating electric charges on two close surfaces insulated from each other. It is a passive electronic component with two terminals. The effect of ...
s, and that storing a charge or no charge on the MOS capacitor could represent the 1 and 0 of a bit, while the MOS transistor could control writing the charge to the capacitor. This led to his development of a single-transistor DRAM memory cell. In 1967, Dennard filed a patent under IBM for a single-transistor DRAM memory cell, based on MOS technology. The first commercial DRAM IC chip was the Intel 1103, which was manufactured on an 8µm MOS process with a capacity of 1 kbit, and was released in 1970. Synchronous dynamic random-access memory (SDRAM) was developed by
Samsung Electronics Samsung Electronics Co., Ltd. (, sometimes shortened to SEC and stylized as SΛMSUNG) is a South Korean multinational electronics corporation headquartered in Yeongtong-gu, Suwon, South Korea. It is the pinnacle of the Samsung chaebol, acc ...
. The first commercial SDRAM chip was the Samsung KM48SL2000, which had a capacity of 16
Mbit The megabit is a multiple of the unit bit for digital information. The prefix mega (symbol M) is defined in the International System of Units (SI) as a multiplier of 106 (1 million), and therefore :1 megabit = = = 1000 kilobits. The megabit ...
. It was introduced by
Samsung The Samsung Group (or simply Samsung) ( ko, 삼성 ) is a South Korean multinational manufacturing conglomerate headquartered in Samsung Town, Seoul, South Korea. It comprises numerous affiliated businesses, most of them united under the ...
in 1992, and mass-produced in 1993. The first commercial DDR SDRAM ( double data rate SDRAM) memory chip was Samsung's 64Mbit DDR SDRAM chip, released in June 1998. GDDR (graphics DDR) is a form of DDR SGRAM (synchronous graphics RAM), which was first released by Samsung as a 16Mbit memory chip in 1998.


Types

The two widely used forms of modern RAM are static RAM (SRAM) and dynamic RAM (DRAM). In SRAM, a bit of data is stored using the state of a six- transistor memory cell, typically using six MOSFETs. This form of RAM is more expensive to produce, but is generally faster and requires less dynamic power than DRAM. In modern computers, SRAM is often used as cache memory for the CPU. DRAM stores a bit of data using a transistor and
capacitor A capacitor is a device that stores electrical energy in an electric field by virtue of accumulating electric charges on two close surfaces insulated from each other. It is a passive electronic component with two terminals. The effect of ...
pair (typically a MOSFET and MOS capacitor, respectively), which together comprise a DRAM cell. The capacitor holds a high or low charge (1 or 0, respectively), and the transistor acts as a switch that lets the control circuitry on the chip read the capacitor's state of charge or change it. As this form of memory is less expensive to produce than static RAM, it is the predominant form of computer memory used in modern computers. Both static and dynamic RAM are considered ''volatile'', as their state is lost or reset when power is removed from the system. By contrast,
read-only memory Read-only memory (ROM) is a type of non-volatile memory used in computers and other electronic devices. Data stored in ROM cannot be electronically modified after the manufacture of the memory device. Read-only memory is useful for storing ...
(ROM) stores data by permanently enabling or disabling selected transistors, such that the memory cannot be altered. Writeable variants of ROM (such as
EEPROM EEPROM (also called E2PROM) stands for electrically erasable programmable read-only memory and is a type of non-volatile memory used in computers, usually integrated in microcontrollers such as smart cards and remote keyless systems, or ...
and NOR flash) share properties of both ROM and RAM, enabling data to persist without power and to be updated without requiring special equipment. ECC memory (which can be either SRAM or DRAM) includes special circuitry to detect and/or correct random faults (memory errors) in the stored data, using parity bits or
error correction codes In computing, telecommunication, information theory, and coding theory, an error correction code, sometimes error correcting code, (ECC) is used for controlling errors in data over unreliable or noisy communication channels. The central idea i ...
. In general, the term ''RAM'' refers solely to solid-state memory devices (either DRAM or SRAM), and more specifically the main memory in most computers. In optical storage, the term
DVD-RAM DVD-RAM (DVD Random Access Memory) is a DVD-based disc specification presented in 1996 by the DVD Forum, which specifies rewritable DVD-RAM media and the appropriate DVD writers. DVD-RAM media have been used in computers as well as camcorders ...
is somewhat of a misnomer since, unlike CD-RW or DVD-RW it does not need to be erased before reuse. Nevertheless, a DVD-RAM behaves much like a hard disc drive if somewhat slower.


Memory cell

The memory cell is the fundamental building block of
computer memory In computing, memory is a device or system that is used to store information for immediate use in a computer or related computer hardware and digital electronic devices. The term ''memory'' is often synonymous with the term '' primary storag ...
. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 (high voltage level) and reset to store a logic 0 (low voltage level). Its value is maintained/stored until it is changed by the set/reset process. The value in the memory cell can be accessed by reading it. In SRAM, the memory cell is a type of flip-flop circuit, usually implemented using FETs. This means that SRAM requires very low power when not being accessed, but it is expensive and has low storage density. A second type, DRAM, is based around a capacitor. Charging and discharging this capacitor can store a "1" or a "0" in the cell. However, the charge in this capacitor slowly leaks away, and must be refreshed periodically. Because of this refresh process, DRAM uses more power, but it can achieve greater storage densities and lower unit costs compared to SRAM.


Addressing

To be useful, memory cells must be readable and writeable. Within the RAM device, multiplexing and demultiplexing circuitry is used to select memory cells. Typically, a RAM device has a set of address lines A0... An, and for each combination of bits that may be applied to these lines, a set of memory cells are activated. Due to this addressing, RAM devices virtually always have a memory capacity that is a power of two. Usually several memory cells share the same address. For example, a 4 bit 'wide' RAM chip has 4 memory cells for each address. Often the width of the memory and that of the microprocessor are different, for a 32 bit microprocessor, eight 4 bit RAM chips would be needed. Often more addresses are needed than can be provided by a device. In that case, external multiplexors to the device are used to activate the correct device that is being accessed.


Memory hierarchy

One can read and over-write data in RAM. Many computer systems have a memory hierarchy consisting of processor registers, on-
die Die, as a verb, refers to death, the cessation of life. Die may also refer to: Games * Die, singular of dice, small throwable objects used for producing random numbers Manufacturing * Die (integrated circuit), a rectangular piece of a semicondu ...
SRAM caches, external caches, DRAM, paging systems and virtual memory or swap space on a hard drive. This entire pool of memory may be referred to as "RAM" by many developers, even though the various subsystems can have very different access times, violating the original concept behind the ''random access'' term in RAM. Even within a hierarchy level such as DRAM, the specific row, column, bank, rank, channel, or interleave organization of the components make the access time variable, although not to the extent that access time to rotating storage media or a tape is variable. The overall goal of using a memory hierarchy is to obtain the highest possible average access performance while minimizing the total cost of the entire memory system (generally, the memory hierarchy follows the access time with the fast CPU registers at the top and the slow hard drive at the bottom). In many modern personal computers, the RAM comes in an easily upgraded form of modules called memory modules or DRAM modules about the size of a few sticks of chewing gum. These can quickly be replaced should they become damaged or when changing needs demand more storage capacity. As suggested above, smaller amounts of RAM (mostly SRAM) are also integrated in the
CPU A central processing unit (CPU), also called a central processor, main processor or just processor, is the electronic circuitry that executes instructions comprising a computer program. The CPU performs basic arithmetic, logic, controlling, a ...
and other ICs on the motherboard, as well as in hard-drives, CD-ROMs, and several other parts of the computer system.


Other uses of RAM

In addition to serving as temporary storage and working space for the operating system and applications, RAM is used in numerous other ways.


Virtual memory

Most modern operating systems employ a method of extending RAM capacity, known as "virtual memory". A portion of the computer's
hard drive A hard disk drive (HDD), hard disk, hard drive, or fixed disk is an electro-mechanical data storage device that stores and retrieves digital data using magnetic storage with one or more rigid rapidly rotating platters coated with mag ...
is set aside for a ''paging file'' or a ''scratch partition'', and the combination of physical RAM and the paging file form the system's total memory. (For example, if a computer has 2 GB (10243 B) of RAM and a 1 GB page file, the operating system has 3 GB total memory available to it.) When the system runs low on physical memory, it can " swap" portions of RAM to the paging file to make room for new data, as well as to read previously swapped information back into RAM. Excessive use of this mechanism results in thrashing and generally hampers overall system performance, mainly because hard drives are far slower than RAM.


RAM disk

Software can "partition" a portion of a computer's RAM, allowing it to act as a much faster hard drive that is called a
RAM disk Ram, ram, or RAM may refer to: Animals * A male sheep * Ram cichlid, a freshwater tropical fish People * Ram (given name) * Ram (surname) * Ram (director) (Ramsubramaniam), an Indian Tamil film director * RAM (musician) (born 1974), Dutch ...
. A RAM disk loses the stored data when the computer is shut down, unless memory is arranged to have a standby battery source, or changes to the RAM disk are written out to a nonvolatile disk. The RAM disk is reloaded from the physical disk upon RAM disk initialization.


Shadow RAM

Sometimes, the contents of a relatively slow ROM chip are copied to read/write memory to allow for shorter access times. The ROM chip is then disabled while the initialized memory locations are switched in on the same block of addresses (often write-protected). This process, sometimes called ''shadowing'', is fairly common in both computers and embedded systems. As a common example, the BIOS in typical personal computers often has an option called "use shadow BIOS" or similar. When enabled, functions that rely on data from the BIOS's ROM instead use DRAM locations (most can also toggle shadowing of video card ROM or other ROM sections). Depending on the system, this may not result in increased performance, and may cause incompatibilities. For example, some hardware may be inaccessible to the
operating system An operating system (OS) is system software that manages computer hardware, software resources, and provides common daemon (computing), services for computer programs. Time-sharing operating systems scheduler (computing), schedule tasks for ef ...
if shadow RAM is used. On some systems the benefit may be hypothetical because the BIOS is not used after booting in favor of direct hardware access. Free memory is reduced by the size of the shadowed ROMs.


Recent developments

Several new types of ''non-volatile'' RAM, which preserve data while powered down, are under development. The technologies used include carbon nanotubes and approaches utilizing Tunnel magnetoresistance. Amongst the 1st generation MRAM, a 128 kbit ( bytes) chip was manufactured with 0.18 µm technology in the summer of 2003. In June 2004,
Infineon Technologies Infineon Technologies AG is a German semiconductor manufacturer founded in 1999, when the semiconductor operations of the former parent company Siemens AG were spun off. Infineon has about 50,280 employees and is one of the ten largest semico ...
unveiled a 16  MB (16 × 220 bytes) prototype again based on 0.18 µm technology. There are two 2nd generation techniques currently in development: thermal-assisted switching (TAS) which is being developed by Crocus Technology, and spin-transfer torque (STT) on which
Crocus ''Crocus'' (; plural: crocuses or croci) is a genus of seasonal flowering plants in the family Iridaceae (iris family) comprising about 100 species of perennials growing from corms. They are low growing plants, whose flower stems remain under ...
, Hynix, IBM, and several other companies are working. Nantero built a functioning carbon nanotube memory prototype 10  GB (10 × 230 bytes) array in 2004. Whether some of these technologies can eventually take significant market share from either DRAM, SRAM, or flash-memory technology, however, remains to be seen. Since 2006, "
solid-state drive A solid-state drive (SSD) is a solid-state storage device that uses integrated circuit assemblies to store data persistently, typically using flash memory, and functioning as secondary storage in the hierarchy of computer storage. It is a ...
s" (based on flash memory) with capacities exceeding 256 gigabytes and performance far exceeding traditional disks have become available. This development has started to blur the definition between traditional random-access memory and "disks", dramatically reducing the difference in performance. Some kinds of random-access memory, such as " EcoRAM", are specifically designed for server farms, where low power consumption is more important than speed.


Memory wall

The "memory wall" is the growing disparity of speed between CPU and memory outside the CPU chip. An important reason for this disparity is the limited communication bandwidth beyond chip boundaries, which is also referred to as ''bandwidth wall''. From 1986 to 2000,
CPU A central processing unit (CPU), also called a central processor, main processor or just processor, is the electronic circuitry that executes instructions comprising a computer program. The CPU performs basic arithmetic, logic, controlling, a ...
speed improved at an annual rate of 55% while memory speed only improved at 10%. Given these trends, it was expected that memory latency would become an overwhelming
bottleneck Bottleneck literally refers to the narrowed portion (neck) of a bottle near its opening, which limit the rate of outflow, and may describe any object of a similar shape. The literal neck of a bottle was originally used to play what is now known as ...
in computer performance. CPU speed improvements slowed significantly partly due to major physical barriers and partly because current CPU designs have already hit the memory wall in some sense.
Intel Intel Corporation is an American multinational corporation and technology company headquartered in Santa Clara, California. It is the world's largest semiconductor chip manufacturer by revenue, and is one of the developers of the x86 ser ...
summarized these causes in a 2005 document.
First of all, as chip geometries shrink and clock frequencies rise, the transistor leakage current increases, leading to excess power consumption and heat... Secondly, the advantages of higher clock speeds are in part negated by memory latency, since memory access times have not been able to keep pace with increasing clock frequencies. Third, for certain applications, traditional serial architectures are becoming less efficient as processors get faster (due to the so-called Von Neumann bottleneck), further undercutting any gains that frequency increases might otherwise buy. In addition, partly due to limitations in the means of producing inductance within solid state devices, resistance-capacitance (RC) delays in signal transmission are growing as feature sizes shrink, imposing an additional bottleneck that frequency increases don't address.
The RC delays in signal transmission were also noted in "Clock Rate versus IPC: The End of the Road for Conventional Microarchitectures" which projected a maximum of 12.5% average annual CPU performance improvement between 2000 and 2014. A different concept is the processor-memory performance gap, which can be addressed by 3D integrated circuits that reduce the distance between the logic and memory aspects that are further apart in a 2D chip. Memory subsystem design requires a focus on the gap, which is widening over time. The main method of bridging the gap is the use of caches; small amounts of high-speed memory that houses recent operations and instructions nearby the processor, speeding up the execution of those operations or instructions in cases where they are called upon frequently. Multiple levels of caching have been developed to deal with the widening gap, and the performance of high-speed modern computers relies on evolving caching techniques. There can be up to a 53% difference between the growth in speed of processor and the lagging speed of main memory access. Solid-state hard drives have continued to increase in speed, from ~400 Mbit/s via SATA3 in 2012 up to ~3 GB/s via NVMe/ PCIe in 2018, closing the gap between RAM and hard disk speeds, although RAM continues to be an order of magnitude faster, with single-lane
DDR4 Double Data Rate 4 Synchronous Dynamic Random-Access Memory (DDR4 SDRAM) is a type of synchronous dynamic random-access memory with a high bandwidth (" double data rate") interface. Released to the market in 2014, it is a variant of dynamic ran ...
3200 capable of 25 GB/s, and modern GDDR even faster. Fast, cheap,
non-volatile Non-volatile memory (NVM) or non-volatile storage is a type of computer memory that can retain stored information even after power is removed. In contrast, volatile memory needs constant power in order to retain data. Non-volatile memory typi ...
solid state drives have replaced some functions formerly performed by RAM, such as holding certain data for immediate availability in server farms - 1 terabyte of SSD storage can be had for $200, while 1 TB of RAM would cost thousands of dollars.


Timeline


SRAM


DRAM


SDRAM


See also


References


External links

* {{DEFAULTSORT:Random-Access Memory American inventions Computer architecture Computer memory *