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Metalorganic vapour-phase epitaxy (MOVPE), also known as
organometallic Organometallic chemistry is the study of organometallic compounds, chemical compounds containing at least one chemical bond between a carbon atom of an organic molecule and a metal, including alkali, alkaline earth, and transition metals, and so ...
vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a
chemical vapour deposition Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films. In typical CVD, the wafer (substra ...
method used to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to
molecular-beam epitaxy Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices, including transistors, and it is considered one of the fundamental tools for the develo ...
(MBE), the growth of
crystals A crystal or crystalline solid is a solid material whose constituents (such as atoms, molecules, or ions) are arranged in a highly ordered microscopic structure, forming a crystal lattice that extends in all directions. In addition, macros ...
is by chemical reaction and not physical deposition. This takes place not in
vacuum A vacuum is a space devoid of matter. The word is derived from the Latin adjective ''vacuus'' for "vacant" or "void". An approximation to such vacuum is a region with a gaseous pressure much less than atmospheric pressure. Physicists often dis ...
, but from the
gas Gas is one of the four fundamental states of matter (the others being solid, liquid, and plasma). A pure gas may be made up of individual atoms (e.g. a noble gas like neon), elemental molecules made from one type of atom (e.g. oxygen), or ...
phase at moderate
pressure Pressure (symbol: ''p'' or ''P'') is the force applied perpendicular to the surface of an object per unit area over which that force is distributed. Gauge pressure (also spelled ''gage'' pressure)The preferred spelling varies by country and e ...
s (10 to 760 
Torr The torr (symbol: Torr) is a unit of pressure based on an absolute scale, defined as exactly of a standard atmosphere (). Thus one torr is exactly (≈ ). Historically, one torr was intended to be the same as one " millimeter of merc ...
). As such, this technique is preferred for the formation of devices incorporating thermodynamically
metastable In chemistry and physics, metastability denotes an intermediate Energy level, energetic state within a dynamical system other than the system's ground state, state of least energy. A ball resting in a hollow on a slope is a simple example of me ...
alloys, and it has become a major process in the manufacture of
optoelectronics Optoelectronics (or optronics) is the study and application of electronic devices and systems that find, detect and control light, usually considered a sub-field of photonics. In this context, ''light'' often includes invisible forms of radiat ...
, such as
Light-emitting diodes A light-emitting diode (LED) is a semiconductor device that emits light when current flows through it. Electrons in the semiconductor recombine with electron holes, releasing energy in the form of photons. The color of the light (cor ...
. It was invented in 1968 at
North American Aviation North American Aviation (NAA) was a major American aerospace manufacturer that designed and built several notable aircraft and spacecraft. Its products included: the T-6 Texan trainer, the P-51 Mustang fighter, the B-25 Mitchell bomber, the F ...
(later
Rockwell International Rockwell International was a major American manufacturing conglomerate involved in aircraft, the space industry, defense and commercial electronics, components in the automotive industry, printing presses, avionics and industrial products. R ...
) Science Center by Harold M. Manasevit.


Basic principles

In MOCVD ultrapure precursor gases are injected into a reactor, usually with a non-reactive carrier gas. For a III-V semiconductor, a
metalorganic Metal-organic compounds (jargon: metalorganics, metallo-organics) are a class of chemical compounds that contain metals and organic ligands, which confer solubility in organic solvents or volatility. Compounds with these properties find applicatio ...
could be used as the group III precursor and a hydride for the group V precursor. For example, indium phosphide can be grown with
trimethylindium Trimethylindium, often abbreviated to TMI or TMIn, is the organoindium compound with the formula In(CH3)3. It is a colorless, pyrophoric solid. Unlike trimethylaluminium, but akin to trimethylgallium, TMI is monomeric. Preparation TMI is prepared ...
((CH3)3In) and
phosphine Phosphine (IUPAC name: phosphane) is a colorless, flammable, highly toxic compound with the chemical formula , classed as a pnictogen hydride. Pure phosphine is odorless, but technical grade samples have a highly unpleasant odor like rotting ...
(PH3) precursors. As the precursors approach the
semiconductor wafer In electronics, a wafer (also called a slice or substrate) is a thin slice of semiconductor, such as a crystalline silicon (c-Si), used for the fabrication of integrated circuits and, in photovoltaics, to manufacture solar cells. The wafer serv ...
, they undergo
pyrolysis The pyrolysis (or devolatilization) process is the thermal decomposition of materials at elevated temperatures, often in an inert atmosphere. It involves a change of chemical composition. The word is coined from the Greek-derived elements ''py ...
and the subspecies absorb onto the semiconductor wafer surface. Surface reaction of the precursor subspecies results in the incorporation of elements into a new epitaxial layer of the semiconductor crystal lattice. In the mass-transport-limited growth regime in which MOCVD reactors typically operate, growth is driven by supersaturation of chemical species in the vapor phase. MOCVD can grow films containing combinations of group III and
group V A pnictogen ( or ; from grc, πνῑ́γω "to choke" and -gen, "generator") is any of the chemical elements in group 15 of the periodic table. Group 15 is also known as the nitrogen group or nitrogen family. Group 15 consists of the el ...
, group II and group VI,
group IV The carbon group is a periodic table group consisting of carbon (C), silicon (Si), germanium (Ge), tin (Sn), lead (Pb), and flerovium (Fl). It lies within the p-block. In modern IUPAC notation, it is called group 14. In the field of semicon ...
. Required pyrolysis temperature increases with increasing
chemical bond A chemical bond is a lasting attraction between atoms or ions that enables the formation of molecules and crystals. The bond may result from the electrostatic force between oppositely charged ions as in ionic bonds, or through the sharing of ...
strength of the precursor. The more carbon atoms are attached to the central metal atom, the weaker the bond. The diffusion of atoms on the substrate surface is affected by atomic steps on the surface. The
vapor pressure Vapor pressure (or vapour pressure in English-speaking countries other than the US; see spelling differences) or equilibrium vapor pressure is defined as the pressure exerted by a vapor in thermodynamic equilibrium with its condensed phas ...
of the group III metal organic source is an important control parameter for MOCVD growth, since it determines the growth rate in the mass-transport-limited regime.


Reactor components

In the metal organic chemical vapor deposition (MOCVD) technique, reactant gases are combined at elevated temperatures in the reactor to cause a chemical interaction, resulting in the deposition of materials on the substrate. A reactor is a chamber made of a material that does not react with the chemicals being used. It must also withstand high temperatures. This chamber is composed by reactor walls, liner, a susceptor, gas injection units, and temperature control units. Usually, the reactor walls are made from stainless steel or quartz. Ceramic or special
glass Glass is a non-crystalline, often transparent, amorphous solid that has widespread practical, technological, and decorative use in, for example, window panes, tableware, and optics. Glass is most often formed by rapid cooling (quenching) of ...
es, such as quartz, are often used as the liner in the reactor chamber between the reactor wall and the susceptor. To prevent overheating, cooling water must be flowing through the channels within the reactor walls. A substrate sits on a ''susceptor'' which is at a controlled temperature. The susceptor is made from a material resistant to the temperature and metalorganic compounds used, often it is machined from
graphite Graphite () is a crystalline form of the element carbon. It consists of stacked layers of graphene. Graphite occurs naturally and is the most stable form of carbon under standard conditions. Synthetic and natural graphite are consumed on large ...
. For growing nitrides and related materials, a special coating, typically of
silicon nitride Silicon nitride is a chemical compound of the elements silicon and nitrogen. is the most thermodynamically stable and commercially important of the silicon nitrides, and the term "silicon nitride" commonly refers to this specific composition. It ...
or
tantalum carbide Tantalum carbides (TaC) form a family of binary chemical compounds of tantalum and carbon with the empirical formula TaC''x'', where ''x'' usually varies between 0.4 and 1. They are extremely hard, brittle, refractory ceramic materials with metall ...
, on the graphite susceptor is necessary to prevent corrosion by ammonia (NH3) gas. One type of reactor used to carry out MOCVD is a cold-wall reactor. In a cold-wall reactor, the substrate is supported by a pedestal, which also acts as a susceptor. The pedestal/susceptor is the primary origin of heat energy in the reaction chamber. Only the susceptor is heated, so gases do not react before they reach the hot wafer surface. The pedestal/susceptor is made of a radiation-absorbing material such as carbon. In contrast, the walls of the reaction chamber in a cold-wall reactor are typically made of quartz which is largely transparent to the
electromagnetic radiation In physics, electromagnetic radiation (EMR) consists of waves of the electromagnetic field, electromagnetic (EM) field, which propagate through space and carry momentum and electromagnetic radiant energy. It includes radio waves, microwaves, inf ...
. The reaction chamber walls in a cold-wall reactor, however, may be indirectly heated by heat radiating from the hot pedestal/susceptor, but will remain cooler than the pedestal/susceptor and the substrate the pedestal/susceptor supports. In hot-wall CVD, the entire chamber is heated. This may be necessary for some gases to be pre-cracked before reaching the wafer surface to allow them to stick to the wafer.


Gas inlet and switching system

Gas is introduced via devices known as 'bubblers'. In a bubbler a carrier gas (usually
hydrogen Hydrogen is the chemical element with the symbol H and atomic number 1. Hydrogen is the lightest element. At standard conditions hydrogen is a gas of diatomic molecules having the formula . It is colorless, odorless, tasteless, non-toxic, an ...
in arsenide & phosphide growth or
nitrogen Nitrogen is the chemical element with the symbol N and atomic number 7. Nitrogen is a nonmetal and the lightest member of group 15 of the periodic table, often called the pnictogens. It is a common element in the universe, estimated at se ...
for nitride growth) is bubbled through the metalorganic
liquid A liquid is a nearly incompressible fluid that conforms to the shape of its container but retains a (nearly) constant volume independent of pressure. As such, it is one of the four fundamental states of matter (the others being solid, gas, a ...
, which picks up some metalorganic vapour and transports it to the reactor. The amount of metalorganic vapour transported depends on the rate of carrier gas flow and the bubbler
temperature Temperature is a physical quantity that expresses quantitatively the perceptions of hotness and coldness. Temperature is measured with a thermometer. Thermometers are calibrated in various temperature scales that historically have relied o ...
, and is usually controlled automatically and most accurately by using an ultrasonic concentration measuring feedback gas control system. Allowance must be made for
saturated vapor Vapor pressure (or vapour pressure in English-speaking countries other than the US; see spelling differences) or equilibrium vapor pressure is defined as the pressure exerted by a vapor in thermodynamic equilibrium with its condensed phase ...
s.


Pressure maintenance system

Gas exhaust and cleaning system. Toxic waste products must be converted to liquid or solid wastes for recycling (preferably) or disposal. Ideally processes will be designed to minimize the production of waste products.


Organometallic precursors

*
Aluminium Aluminium (aluminum in American and Canadian English) is a chemical element with the symbol Al and atomic number 13. Aluminium has a density lower than those of other common metals, at approximately one third that of steel. I ...
**
Trimethylaluminium Trimethylaluminium is one of the simplest examples of an organoaluminium compound. Despite its name it has the formula Al2( CH3)6 (abbreviated as Al2Me6 or TMA), as it exists as a dimer. This colorless liquid is pyrophoric. It is an industriall ...
(TMA or TMAl), Liquid **
Triethylaluminium Triethylaluminium is one of the simplest examples of an organoaluminium compound. Despite its name it has the formula Al2( C2H5)6 (abbreviated as Al2Et6 or TEA), as it exists as a dimer. This colorless liquid is pyrophoric. It is an industrially ...
(TEA or TEAl), Liquid *
Gallium Gallium is a chemical element with the symbol Ga and atomic number 31. Discovered by French chemist Paul-Émile Lecoq de Boisbaudran in 1875, Gallium is in group 13 of the periodic table and is similar to the other metals of the group (aluminiu ...
**
Trimethylgallium Trimethylgallium, often abbreviated to TMG or TMGa, is the organogallium compound with the formula Ga(CH3)3. It is a colorless, pyrophoric liquid. Unlike trimethylaluminium, TMG adopts a monomeric structure. When examined in detail, the monomeric ...
(TMG or TMGa), Liquid ** Triethylgallium (TEG or TEGa), Liquid *
Indium Indium is a chemical element with the symbol In and atomic number 49. Indium is the softest metal that is not an alkali metal. It is a silvery-white metal that resembles tin in appearance. It is a post-transition metal that makes up 0.21 parts p ...
**
Trimethylindium Trimethylindium, often abbreviated to TMI or TMIn, is the organoindium compound with the formula In(CH3)3. It is a colorless, pyrophoric solid. Unlike trimethylaluminium, but akin to trimethylgallium, TMI is monomeric. Preparation TMI is prepared ...
(TMI or TMIn), Solid ** Triethylindium (TEI or TEIn), Liquid *
Di-isopropylmethylindium (DIPMeIn)
Liquid *
Ethyldimethylindium (EDMIn)
Liquid *
Germanium Germanium is a chemical element with the symbol Ge and atomic number 32. It is lustrous, hard-brittle, grayish-white and similar in appearance to silicon. It is a metalloid in the carbon group that is chemically similar to its group neighbors s ...
**
Isobutylgermane Isobutylgermane (IBGe, Chemical formula: (CH3)2CHCH2GeH3, is an organogermanium compound. It is a colourless, volatile liquid that is used in MOVPE (Metalorganic Vapor Phase Epitaxy) as an alternative to germane. IBGe is used in the deposition o ...
br>(IBGe)
Liquid ** Dimethylamino germanium trichloride (DiMAGeC), Liquid ** Tetramethylgermane (TMGe), Liquid **
Tetraethylgermanium Tetraethylgermanium (common name tetraethyl germanium), abbreviated TEG, is an organogermanium compound with the formula ( CH3CH2)4 Ge. Tetraethylgermanium is an important chemical compound used in vapour deposition of germanium which is in a tetra ...
(TEGe), Liquid ** Germane GeH4, Gas *
Nitrogen Nitrogen is the chemical element with the symbol N and atomic number 7. Nitrogen is a nonmetal and the lightest member of group 15 of the periodic table, often called the pnictogens. It is a common element in the universe, estimated at se ...
**
Phenyl hydrazine Phenylhydrazine is the chemical compound with the formula . It is often abbreviated as . It is also found in edible mushrooms. Properties Phenylhydrazine forms monoclinic prisms that melt to an oil around room temperature which may turn yellow ...
, Liquid ** Dimethylhydrazine (DMHy), Liquid ** Tertiarybutylamine (TBAm), Liquid **
Ammonia Ammonia is an inorganic compound of nitrogen and hydrogen with the formula . A stable binary hydride, and the simplest pnictogen hydride, ammonia is a colourless gas with a distinct pungent smell. Biologically, it is a common nitrogenous was ...
NH3, Gas *
Phosphorus Phosphorus is a chemical element with the symbol P and atomic number 15. Elemental phosphorus exists in two major forms, white phosphorus and red phosphorus, but because it is highly reactive, phosphorus is never found as a free element on Ear ...
**
Phosphine Phosphine (IUPAC name: phosphane) is a colorless, flammable, highly toxic compound with the chemical formula , classed as a pnictogen hydride. Pure phosphine is odorless, but technical grade samples have a highly unpleasant odor like rotting ...
PH3, Gas ** Tertiarybutyl phosphine (TBP), Liquid ** Bisphosphinoethane (BPE), Liquid *
Arsenic Arsenic is a chemical element with the symbol As and atomic number 33. Arsenic occurs in many minerals, usually in combination with sulfur and metals, but also as a pure elemental crystal. Arsenic is a metalloid. It has various allotropes, but ...
**
Arsine Arsine (IUPAC name: arsane) is an inorganic compound with the formula As H3. This flammable, pyrophoric, and highly toxic pnictogen hydride gas is one of the simplest compounds of arsenic. Despite its lethality, it finds some applications in ...
AsH3, Gas ** Tertiarybutyl arsine (TBAs), Liquid ** Monoethyl arsine (MEAs), Liquid ** Trimethyl arsine (TMAs), Liquid *
Antimony Antimony is a chemical element with the symbol Sb (from la, stibium) and atomic number 51. A lustrous gray metalloid, it is found in nature mainly as the sulfide mineral stibnite (Sb2S3). Antimony compounds have been known since ancient t ...
** Trimethyl antimony (TMSb), Liquid ** Triethyl antimony (TESb), Liquid ** Tri-isopropyl antimony (TIPSb), Liquid ** Stibine SbH3, Gas *
Cadmium Cadmium is a chemical element with the symbol Cd and atomic number 48. This soft, silvery-white metal is chemically similar to the two other stable metals in group 12, zinc and mercury. Like zinc, it demonstrates oxidation state +2 in most of ...
** Dimethyl cadmium (DMCd), Liquid ** Diethyl cadmium (DECd), Liquid ** Methyl Allyl Cadmium (MACd), Liquid *
Tellurium Tellurium is a chemical element with the symbol Te and atomic number 52. It is a brittle, mildly toxic, rare, silver-white metalloid. Tellurium is chemically related to selenium and sulfur, all three of which are chalcogens. It is occasionall ...
**
Dimethyl telluride Dimethyl telluride is an organotelluride compound, formula ( CH3)2 Te, also known by the abbreviation DMTe. This was the first material used to grow epitaxial cadmium telluride and mercury cadmium telluride using metalorganic vapour phase epit ...
(DMTe), Liquid ** Diethyl telluride (DETe), Liquid *
Di-isopropyl telluride (DIPTe)
Liquid *
Titanium Titanium is a chemical element with the symbol Ti and atomic number 22. Found in nature only as an oxide, it can be reduced to produce a lustrous transition metal with a silver color, low density, and high strength, resistant to corrosion in ...
**
Alkoxides In chemistry, an alkoxide is the conjugate base of an alcohol and therefore consists of an organic group bonded to a negatively charged oxygen atom. They are written as , where R is the organic substituent. Alkoxides are strong bases and, w ...
, such as
Titanium isopropoxide Titanium isopropoxide, also commonly referred to as titanium tetraisopropoxide or TTIP, is a chemical compound with the formula . This alkoxide of titanium(IV) is used in organic synthesis and materials science. It is a diamagnetic tetrahedral m ...
or
Titanium ethoxide Titanium ethoxide is a chemical compound with the formula Ti4(OCH2CH3)16. It is a colorless liquid that is soluble in organic solvents but hydrolyzes readily. It is sold commercially as a colorless solution. Alkoxides of titanium(IV) and zirconi ...
*
Selenium Selenium is a chemical element with the symbol Se and atomic number 34. It is a nonmetal (more rarely considered a metalloid) with properties that are intermediate between the elements above and below in the periodic table, sulfur and tellurium, ...
** Dimethyl selenide (DMSe), Liquid ** Diethyl selenide (DESe), Liquid ** Di-isopropyl selenide (DIPSe), Liquid ** Di-tert-butyl selenide (DTBSe), Liquid *
Zinc Zinc is a chemical element with the symbol Zn and atomic number 30. Zinc is a slightly brittle metal at room temperature and has a shiny-greyish appearance when oxidation is removed. It is the first element in group 12 (IIB) of the periodi ...
**
Dimethylzinc Dimethylzinc, also known as Zinc methyl, DMZ, or DMZn is a colorless volatile liquid Zn(CH3)2, formed by the action of methyl iodide on zinc at elevated temperature or on zinc sodium alloy. :2Zn + 2CH3I → Zn(CH3)2 + ZnI2 The sodium assists the ...
(DMZ), Liquid **
Diethylzinc Diethylzinc (C2H5)2Zn, or DEZ, is a highly pyrophoric and reactive organozinc compound consisting of a zinc center bound to two ethyl groups. This colourless liquid is an important reagent in organic chemistry. It is available commercially as a ...
(DEZ), Liquid


Semiconductors grown by MOCVD


III-V semiconductors

* AlP *
AlN Aluminium nitride ( Al N) is a solid nitride of aluminium. It has a high thermal conductivity of up to 321 W/(m·K) and is an electrical insulator. Its wurtzite phase (w-AlN) has a band gap of ~6 eV at room temperature and has a potent ...
* AlGaSb * AlGaAs *
AlGaInP Aluminium gallium indium phosphide (, also AlInGaP, InGaAlP, GaInP, etc.) is a semiconductor material that provides a platform for the development of novel multi-junction photovoltaics and optoelectronic devices, as it spans a direct bandgap fro ...
*
AlGaN Aluminium gallium nitride (AlGaN) is a semiconductor material. It is any alloy of aluminium nitride and gallium nitride. The bandgap of AlxGa1−xN can be tailored from 3.4eV (xAl=0) to 6.2eV (xAl=1). AlGaN is used to manufacture light-emitting di ...
* AlGaP * GaSb * GaAsP *
GaAs Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circ ...
*
GaN The word Gan or the initials GAN may refer to: Places *Gan, a component of Hebrew placenames literally meaning "garden" China * Gan River (Jiangxi) * Gan River (Inner Mongolia), * Gan County, in Jiangxi province * Gansu, abbreviated ''Gā ...
* GaP *
InAlAs Aluminium indium arsenide, also indium aluminium arsenide or AlInAs ( Alx In1−x As), is a semiconductor material with very nearly the same lattice constant as GaInAs, but a larger bandgap. The ''x'' in the formula above is a number between 0 and 1 ...
* InAlP *
InSb Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow- gap semiconductor material from the III- V group used in infrared detectors, including thermal imaging cameras, FLIR systems, ...
* InGaSb *
InGaN Indium gallium nitride (InGaN, ) is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN). It is a ternary group III/group V direct bandgap semiconductor. Its bandgap can be tuned by varying the amount of in ...
* GaInAlAs * GaInAlN * GaInAsN * GaInAsP *
GaInAs Gainas (Greek: Γαϊνάς) was a Gothic leader who served the Eastern Roman Empire as ''magister militum'' during the reigns of Theodosius I and Arcadius. Gainas began his military career as a common foot-soldier, but later commanded the bar ...
* GaInP *
InN Inns are generally establishments or buildings where travelers can seek lodging, and usually, food and drink. Inns are typically located in the country or along a highway; before the advent of motorized transportation they also provided accommo ...
*
InP Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic (" zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors. Manufacturing Indium phosphide c ...
*
InAs Indium arsenide, InAs, or indium monoarsenide, is a narrow-bandgap semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is similar in properties to galli ...
* InAsSb * AlInN


II-VI semiconductors

*
ZnSe Zinc selenide (ZnSe) is a light-yellow, solid compound comprising zinc (Zn) and selenium (Se). It is an intrinsic semiconductor with a band gap of about 2.70  eV at . ZnSe rarely occurs in nature, and is found in the mineral that was named af ...
*
HgCdTe Hg1−xCdxTe or mercury cadmium telluride (also cadmium mercury telluride, MCT, MerCad Telluride, MerCadTel, MerCaT or CMT) is a chemical compound of cadmium telluride (CdTe) and mercury telluride (HgTe) with a tunable bandgap spanning the shortwav ...
* ZnO *
ZnS ZNS or ZnS may refer to: * Zinc sulfide or zinc sulphide (ZnS), a chemical compound * ZNS-TV, a national radio and TV broadcaster operated by the state-owned Broadcasting Corporation of The Bahamas ** ZNS-1 ZNS-1 (branded as ''Radio Bahamas'') i ...
* CdO


IV Semiconductors

* Si * Ge * Strained silicon


IV-V-VI Semiconductors

*
GeSbTe GeSbTe (germanium-antimony-tellurium or GST) is a phase-change material from the group of chalcogenide glasses used in rewritable optical discs and phase-change memory applications. Its recrystallization time is 20 nanoseconds, allowing bitrates of ...


Environment, health and safety

As MOCVD has become well-established production technology, there are equally growing concerns associated with its bearing on personnel and community safety, environmental impact and maximum quantities of hazardous materials (such as gases and metalorganics) permissible in the device fabrication operations. The safety as well as responsible environmental care have become major factors of paramount importance in the MOCVD-based crystal growth of compound semiconductors. As the application of this technique in industry has grown, a number of companies have also grown and evolved over the years to provide the ancillary equipment required to reduce risk. This equipment includes but is not limited to computer automated gas and chemical delivery systems, toxic and carrier gas sniffing sensors which can detect single digit ppb amounts of gas, and of course abatement equipment to fully capture toxic materials which can be present in the growth of arsenic containing alloys such as GaAs and InGaAsP.For examples see the websites of Matheson Tri Gas, Honeywell, Applied Energy, DOD Systems


See also

* Atomic layer deposition *
Hydrogen purifier A hydrogen purifier is a device to purify hydrogen if hydrogen production is done from hydrocarbon sources, the ultra-high purified hydrogen is needed for applications like PEM fuel cells . Palladium membrane hydrogen purifiers The palladium memb ...
*
List of semiconductor materials Semiconductor materials are nominally small band gap insulators. The defining property of a semiconductor material is that it can be compromised by doping it with impurities that alter its electronic properties in a controllable way. Because of ...
*
Metalorganics Metal-organic compounds (jargon: metalorganics, metallo-organics) are a class of chemical compounds that contain metals and organic ligands, which confer solubility in organic solvents or volatility. Compounds with these properties find applicatio ...
*
Molecular beam epitaxy Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices, including transistors, and it is considered one of the fundamental tools for the devel ...
*
Thin-film deposition A thin film is a layer of material ranging from fractions of a nanometer ( monolayer) to several micrometers in thickness. The controlled synthesis of materials as thin films (a process referred to as deposition) is a fundamental step in many a ...


References

{{reflist Chemical processes Semiconductor growth Thin film deposition Semiconductor device fabrication