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Indium Nitride
Indium nitride () is a narrow gap, small bandgap semiconductor material which has potential application in solar cells and high speed electronics. The bandgap of InN has now been established as ~0.7 eV depending on temperature (the obsolete value is 1.97 eV). The effective electron mass has been recently determined by high magnetic field measurements, m* =0.055 m0. Alloyed with Gallium nitride, GaN, the ternary system InGaN has a direct bandgap span from the infrared (0.69 eV) to the ultraviolet (3.4 eV). Currently there is research into developing solar cells using the nitride based semiconductors. Using one or more alloys of indium gallium nitride (InGaN), an optical match to the sun, solar spectrum can be achieved. The bandgap of InN allows a wavelengths as long as 1900 nanometer, nm to be utilized. However, there are many difficulties to be overcome if such solar cells are to become a commercial reality: P-type semiconductor, p-type doping of InN and indium-rich InGaN is ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Wurtzite
Wurtzite is a zinc and iron sulfide mineral with the chemical formula , a less frequently encountered Polymorphism (materials science), structural polymorph form of sphalerite. The iron content is variable up to eight percent.Palache, Charles, Harry Berman & Clifford Frondel (1944), ''The System of Mineralogy of James Dwight Dana and Edward Salisbury Dana,'' Yale University 1837-1892, Volume I: Elements, Sulfides, Sulfosalts, Oxides. John Wiley and Sons, Inc., New York. 7th edition, revised and enlarged, pp. 226-228. It is trimorphous with matraite and sphalerite. It occurs in hydrothermal deposits associated with sphalerite, pyrite, chalcopyrite, barite and marcasite. It also occurs in low-temperature clay-ironstone concretions. It was first described in 1861 for an occurrence in the San José Mine, Oruro, Bolivia, Oruro City, Cercado Province (Oruro), Cercado Province, Oruro Department, Bolivia, and named for French chemist Charles-Adolphe Wurtz. It has widespread distribution. ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Semiconductor
A semiconductor is a material which has an electrical resistivity and conductivity, electrical conductivity value falling between that of a electrical conductor, conductor, such as copper, and an insulator (electricity), insulator, such as glass. Its electrical resistivity and conductivity, resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities ("doping (semiconductor), doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created. The behavior of charge carriers, which include electrons, ions, and electron holes, at these junctions is the basis of diodes, transistors, and most modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most common s ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Nitrides
In chemistry, a nitride is an inorganic compound of nitrogen. The "nitride" anion, N3- ion, is very elusive but compounds of nitride are numerous, although rarely naturally occuring. Some nitrides have a find applications, such as wear-resistant coatings (e.g., titanium nitride, TiN), hard ceramic materials (e.g., silicon nitride, Si3N4), and semiconductors (e.g., gallium nitride, GaN). The development of GaN-based light emitting diodes was recognized by the 2014 Nobel Prize in Physics. Metal nitrido complexes are also common. Synthesis of inorganic metal nitrides is challenging because nitrogen gas (N2) is not very reactive at low temperatures, but it becomes more reactive at higher temperatures. Therefore, a balance must be achieved between the low reactivity of nitrogen gas at low temperatures and the entropy driven formation of N2 at high temperatures. However, synthetic methods for nitrides are growing more sophisticated and the materials are of increasing technological re ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Indium Compounds
Indium is a chemical element with the symbol In and atomic number 49. Indium is the softest metal that is not an alkali metal. It is a silvery-white metal that resembles tin in appearance. It is a post-transition metal that makes up 0.21 parts per million of the Earth's crust. Indium has a melting point higher than sodium and gallium, but lower than lithium and tin. Chemically, indium is similar to gallium and thallium, and it is largely intermediate between the two in terms of its properties. Indium was discovered in 1863 by Ferdinand Reich and Hieronymous Theodor Richter by spectroscopic methods. They named it for the indigo blue line in its spectrum. Indium was isolated the next year. Indium is a minor component in zinc sulfide ores and is produced as a byproduct of zinc refinement. It is most notably used in the semiconductor industry, in low-melting-point metal alloys such as solders, in soft-metal high-vacuum seals, and in the production of transparent conductive coatings ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Indium(III) Oxide
Indium(III) oxide ( In2 O3) is a chemical compound, an amphoteric oxide of indium. Physical properties Crystal structure Amorphous indium oxide is insoluble in water but soluble in acids, whereas crystalline indium oxide is insoluble in both water and acids. The crystalline form exists in two phases, the cubic (bixbyite type) and rhombohedral ( corundum type). Both phases have a band gap of about 3 eV. The parameters of the cubic phase are listed in the infobox. The rhombohedral phase is produced at high temperatures and pressures or when using non-equilibrium growth methods. It has a space group Rc No. 167, Pearson symbol hR30, a = 0.5487 nm, b = 0.5487 nm, c = 1.4510 nm, Z = 6 and calculated density 7.31 g/cm3. Conductivity and magnetism Thin films of chromium- doped indium oxide (In2−xCrxO3) are a magnetic semiconductor displaying high-temperature ferromagnetism, single-phase crystal structure, and semiconductor behavior with high concentration of charge car ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Ginzburg–Landau Theory
In physics, Ginzburg–Landau theory, often called Landau–Ginzburg theory, named after Vitaly Ginzburg and Lev Landau, is a mathematical physical theory used to describe superconductivity. In its initial form, it was postulated as a phenomenological model which could describe type-I superconductors without examining their microscopic properties. One GL-type superconductor is the famous YBCO, and generally all Cuprates. Later, a version of Ginzburg–Landau theory was derived from the Bardeen–Cooper–Schrieffer microscopic theory by Lev Gor'kov, thus showing that it also appears in some limit of microscopic theory and giving microscopic interpretation of all its parameters. The theory can also be given a general geometric setting, placing it in the context of Riemannian geometry, where in many cases exact solutions can be given. This general setting then extends to quantum field theory and string theory, again owing to its solvability, and its close relation to other, simi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Liquid Helium
Liquid helium is a physical state of helium at very low temperatures at standard atmospheric pressures. Liquid helium may show superfluidity. At standard pressure, the chemical element helium exists in a liquid form only at the extremely low temperature of . Its boiling point and critical point depend on which isotope of helium is present: the common isotope helium-4 or the rare isotope helium-3. These are the only two stable isotopes of helium. See the table below for the values of these physical quantities. The density of liquid helium-4 at its boiling point and a pressure of one atmosphere (101.3 kilopascals) is about , or about one-eighth the density of liquid water. Liquefaction Helium was first liquefied on July 10, 1908, by the Dutch physicist Heike Kamerlingh Onnes at the University of Leiden in the Netherlands. At that time, helium-3 was unknown because the mass spectrometer had not yet been invented. In more recent decades, liquid helium has been used as a cryogenic ref ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Superconductive
Superconductivity is a set of physical properties observed in certain materials where electrical resistance vanishes and magnetic flux fields are expelled from the material. Any material exhibiting these properties is a superconductor. Unlike an ordinary metallic conductor, whose resistance decreases gradually as its temperature is lowered even down to near absolute zero, a superconductor has a characteristic critical temperature below which the resistance drops abruptly to zero. An electric current through a loop of superconducting wire can persist indefinitely with no power source. The superconductivity phenomenon was discovered in 1911 by Dutch physicist Heike Kamerlingh Onnes. Like ferromagnetism and atomic spectral lines, superconductivity is a phenomenon which can only be explained by quantum mechanics. It is characterized by the Meissner effect, the complete ejection of magnetic field lines from the interior of the superconductor during its transitions into the super ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Metalorganic Chemical Vapour Deposition
Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition. This takes place not in vacuum, but from the gas phase at moderate pressures (10 to 760 Torr). As such, this technique is preferred for the formation of devices incorporating thermodynamically metastable alloys, and it has become a major process in the manufacture of optoelectronics, such as Light-emitting diodes. It was invented in 1968 at North American Aviation (later Rockwell International) Science Center by Harold M. Manasevit. Basic principles In MOCVD ultrapure precursor gases are injected into a reactor, ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gallium Nitride
Gallium nitride () is a binary III/ V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without requiring nonlinear optical frequency-doubling. Its sensitivity to ionizing radiation is low (like other group III nitrides), making it a suitable material for solar cell arrays for satellites. Military and space applications could also benefit as devices have shown stability in high radiation environments. Because GaN transistors can operate at much higher temperatures and work at much higher voltages than gallium arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies. In addition, GaN offers promising characteris ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
P-type Semiconductor
An extrinsic semiconductor is one that has been '' doped''; during manufacture of the semiconductor crystal a trace element or chemical called a doping agent has been incorporated chemically into the crystal, for the purpose of giving it different electrical properties than the pure semiconductor crystal, which is called an ''intrinsic semiconductor''. In an extrinsic semiconductor it is these foreign dopant atoms in the crystal lattice that mainly provide the charge carriers which carry electric current through the crystal. The doping agents used are of two types, resulting in two types of extrinsic semiconductor. An ''electron donor'' dopant is an atom which, when incorporated in the crystal, releases a mobile conduction electron into the crystal lattice. An extrinsic semiconductor which has been doped with electron donor atoms is called an n-type semiconductor, because the majority of charge carriers in the crystal are negative electrons. An ''electron acceptor'' dopant is ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Nanometer
330px, Different lengths as in respect to the molecular scale. The nanometre (international spelling as used by the International Bureau of Weights and Measures; SI symbol: nm) or nanometer (American and British English spelling differences#-re, -er, American spelling) is a units of measurement, unit of length in the International System of Units (SI), equal to one billionth (short scale) of a metre () and to 1000 picometres. One nanometre can be expressed in scientific notation as , and as metres. History The nanometre was formerly known as the millimicrometre – or, more commonly, the millimicron for short – since it is of a micron (micrometre), and was often denoted by the symbol mμ or (more rarely and confusingly, since it logically should refer to a ''millionth'' of a micron) as μμ. Etymology The name combines the SI prefix ''nano-'' (from the Ancient Greek , ', "dwarf") with the parent unit name ''metre'' (from Greek , ', "unit of measurement"). ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
