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GeSbTe
GeSbTe (germanium-antimony-tellurium or GST) is a phase-change material from the group of chalcogenide glasses used in rewritable optical discs and phase-change memory applications. Its recrystallization time is 20 nanoseconds, allowing bitrates of up to 35 Mbit/s to be written and direct overwrite capability up to 106 cycles. It is suitable for land-groove recording formats. It is often used in rewritable DVDs. New phase-change memories are possible using n-doped GeSbTe semiconductor. The melting point of the alloy is about 600 °C (900 K) and the crystallization temperature is between 100 and 150 °C. During writing, the material is erased, initialized into its crystalline state, with low-intensity laser irradiation. The material heats up to its crystallization temperature, but not its melting point, and crystallizes. The information is written at the crystalline phase, by heating spots of it with short (<10 ns), high-intensity

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GeSbTe Phase Diagram
GeSbTe (germanium-antimony-tellurium or GST) is a phase-change material from the group of chalcogenide glasses used in rewritable optical discs and phase-change memory applications. Its recrystallization time is 20 nanoseconds, allowing bitrates of up to 35 megabit, Mbit/s to be written and direct overwrite capability up to 106 cycles. It is suitable for land-groove recording formats. It is often used in DVD-RW, rewritable DVDs. New phase-change memories are possible using doping (semiconductors), n-doped GeSbTe semiconductor. The melting point of the alloy is about 600 °C (900 K) and the crystallization temperature is between 100 and 150 °C. During writing, the material is erased, initialized into its crystalline state, with low-intensity laser irradiation. The material heats up to its crystallization temperature, but not its melting point, and crystallizes. The information is written at the crystalline phase, by heating spots of it with short (<10 ns), high-intensity l ...
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Phase-change Memory
Phase-change memory (also known as PCM, PCME, PRAM, PCRAM, OUM (ovonic unified memory) and C-RAM or CRAM (chalcogenide RAM)) is a type of non-volatile random-access memory. PRAMs exploit the unique behaviour of chalcogenide glass. In PCM, heat produced by the passage of an electric current through a heating element generally made of titanium nitride is used to either quickly heat and quench the glass, making it amorphous, or to hold it in its crystallization temperature range for some time, thereby switching it to a crystalline state. PCM also has the ability to achieve a number of distinct intermediary states, thereby having the ability to hold multiple bits in a single cell, but the difficulties in programming cells in this way has prevented these capabilities from being implemented in other technologies (most notably flash memory) with the same capability. Recent research on PCM has been directed towards attempting to find viable material alternatives to the phase-change materi ...
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Chalcogenide Glass
Chalcogenide glass (pronounced hard ''ch'' as in ''chemistry'') is a glass containing one or more chalcogens (sulfur, selenium and tellurium, but excluding oxygen). Such glasses are covalently bonded materials and may be classified as covalent network solids. Polonium is also a chalcogen but is not used because of its strong radioactivity. Chalcogenide materials behave rather differently from oxides, in particular their lower band gaps contribute to very dissimilar optical and electrical properties. The classical chalcogenide glasses (mainly sulfur-based ones such as As-S or Ge-S) are strong glass-formers and possess glasses within large concentration regions. Glass-forming abilities decrease with increasing molar weight of constituent elements; i.e., S > Se > Te. Chalcogenide compounds such as AgInSbTe and GeSbTe are used in rewritable optical disks and phase-change memory devices. They are fragile glass-formers: by controlling heating and annealing (cooling), they can be swit ...
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Isobutylgermane
Isobutylgermane (IBGe, Chemical formula: (CH3)2CHCH2GeH3, is an organogermanium compound. It is a colourless, volatile liquid that is used in MOVPE (Metalorganic Vapor Phase Epitaxy) as an alternative to germane. IBGe is used in the deposition of Ge films and Ge-containing thin semiconductor films such as SiGe in strained silicon application, and GeSbTe in NAND Flash applications. Properties IBGe is a non-pyrophoric liquid source for chemical vapor deposition ( CVD) and atomic layer deposition (ALD) of semiconductors. It possesses very high vapor pressure and is considerably less hazardous than germane gas. IBGe also offers lower decomposition temperature (the onset of decomposition at ca. 325-350 °C).,Safer alternativ ...
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DVD-RW
DVD recordable and DVD rewritable are optical disc recording technologies. Both terms describe DVD optical discs that can be written to by a DVD recorder, whereas only 'rewritable' discs are able to erase and rewrite data. Data is written ('burned') to the disc by a laser, rather than the data being 'pressed' onto the disc during manufacture, like a DVD-ROM. Pressing is used in mass production, primarily for the distribution of home video. Like CD-Rs, DVD recordable uses dye to store the data. During the burning of a single bit, the laser's intensity affects the reflective properties of the burned dye. By varying the laser intensity quickly, high density data is written in precise tracks. Since written tracks are made of darkened dye, the data side of a recordable DVD has a distinct color. Burned DVDs have a higher failure-to-read rate than pressed DVDs, due to differences in the reflective properties of dye compared to the aluminum substrate of pressed discs. Comparing recordab ...
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Metalorganic Chemical Vapor Deposition
Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition. This takes place not in vacuum, but from the gas phase at moderate pressures (10 to 760 Torr (unit), Torr). As such, this technique is preferred for the formation of devices incorporating thermodynamically Phases of matter#Metastable phases, metastable alloys, and it has become a major process in the manufacture of optoelectronics, such as Light-emitting diodes. It was invented in 1968 at North American Aviation (later Rockwell International) Science Center by Harold M. Manasevit. Basic principles In MOCVD ultrap ...
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Glass Transition Temperature
The glass–liquid transition, or glass transition, is the gradual and reversible transition in amorphous materials (or in amorphous regions within semicrystalline materials) from a hard and relatively brittle "glassy" state into a viscous or rubbery state as the temperature is increased. ISO 11357-2: Plastics – Differential scanning calorimetry – Part 2: Determination of glass transition temperature (1999). An amorphous solid that exhibits a glass transition is called a glass. The reverse transition, achieved by supercooling a viscous liquid into the glass state, is called vitrification. The glass-transition temperature ''T''g of a material characterizes the range of temperatures over which this glass transition occurs (as an experimental definition, typically marked as 100 s of relaxation time). It is always lower than the melting temperature, ''T''m, of the crystalline state of the material, if one exists. Hard plastics like polystyrene and poly(methyl methacrylate) are u ...
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Germanium
Germanium is a chemical element with the symbol Ge and atomic number 32. It is lustrous, hard-brittle, grayish-white and similar in appearance to silicon. It is a metalloid in the carbon group that is chemically similar to its group neighbors silicon and tin. Like silicon, germanium naturally reacts and forms complexes with oxygen in nature. Because it seldom appears in high concentration, germanium was discovered comparatively late in the discovery of the elements. Germanium ranks near fiftieth in relative abundance of the elements in the Earth's crust. In 1869, Dmitri Mendeleev predicted its existence and some of its properties from its position on his periodic table, and called the element ekasilicon. In 1886, Clemens Winkler at Freiberg University found the new element, along with silver and sulfur, in the mineral argyrodite. Winkler named the element after his country, Germany. Germanium is mined primarily from sphalerite (the primary ore of zinc), though germanium is ...
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Antimony
Antimony is a chemical element with the symbol Sb (from la, stibium) and atomic number 51. A lustrous gray metalloid, it is found in nature mainly as the sulfide mineral stibnite (Sb2S3). Antimony compounds have been known since ancient times and were powdered for use as medicine and cosmetics, often known by the Arabic name kohl. The earliest known description of the metal in the West was written in 1540 by Vannoccio Biringuccio. China is the largest producer of antimony and its compounds, with most production coming from the Xikuangshan Mine in Hunan. The industrial methods for refining antimony from stibnite are roasting followed by reduction with carbon, or direct reduction of stibnite with iron. The largest applications for metallic antimony are in alloys with lead and tin, which have improved properties for solders, bullets, and plain bearings. It improves the rigidity of lead-alloy plates in lead–acid batteries. Antimony trioxide is a prominent additive for halo ...
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Tellurium
Tellurium is a chemical element with the symbol Te and atomic number 52. It is a brittle, mildly toxic, rare, silver-white metalloid. Tellurium is chemically related to selenium and sulfur, all three of which are chalcogens. It is occasionally found in native form as elemental crystals. Tellurium is far more common in the Universe as a whole than on Earth. Its extreme rarity in the Earth's crust, comparable to that of platinum, is due partly to its formation of a volatile hydride that caused tellurium to be lost to space as a gas during the hot nebular formation of Earth.Anderson, Don L.; "Chemical Composition of the Mantle" in ''Theory of the Earth'', pp. 147-175 Tellurium-bearing compounds were first discovered in 1782 in a gold mine in Kleinschlatten, Transylvania (now Zlatna, Romania) by Austrian mineralogist Franz-Joseph Müller von Reichenstein, although it was Martin Heinrich Klaproth who named the new element in 1798 after the Latin 'earth'. Gold telluride minerals ar ...
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Chalcogenide
: 220px, Cadmium sulfide, a prototypical metal chalcogenide, is used as a yellow pigment. A chalcogenide is a chemical compound consisting of at least one chalcogen anion and at least one more electropositive element. Although all group 16 elements of the periodic table are defined as chalcogens, the term chalcogenide is more commonly reserved for sulfides, selenides, tellurides, and polonides, rather than oxides. Many metal ores exist as chalcogenides. Photoconductive chalcogenide glasses are used in xerography. Some pigments and catalysts are also based on chalcogenides. The metal dichalcogenide MoS2 is a common solid lubricant. Alkali metal and alkaline earth chalcogenides Alkali metal and alkaline earth monochalcogenides are salt-like, being colourless and often water-soluble. The sulfides tend to undergo hydrolysis to form derivatives containing bisulfide (SH−) anions. The alkali metal chalcogenides often crystallize with the antifluorite structure and the alkaline earth s ...
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Phase-change Material
A phase change material (PCM) is a substance which releases/absorbs sufficient energy at phase transition to provide useful heat or cooling. Generally the transition will be from one of the first two fundamental states of matter - solid and liquid - to the other. The phase transition may also be between non-classical states of matter, such as the conformity of crystals, where the material goes from conforming to one crystalline structure to conforming to another, which may be a higher or lower energy state. The energy released/absorbed by phase transition from solid to liquid, or vice versa, the heat of fusion is generally much higher than the sensible heat. Ice, for example, requires 333.55 J/g to melt, but then water will rise one degree further with the addition of just 4.18 J/g. Water/ice is therefore a very useful phase change material and has been used to store winter cold to cool buildings in summer since at least the time of the Achaemenid Empire. By melting and soli ...
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