A MESFET (metal–semiconductor field-effect transistor) is a
field-effect transistor
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: ''source'', ''gate'', and ''drain''. FETs contro ...
semiconductor device similar to a
JFET
The junction-gate field-effect transistor (JFET) is one of the simplest types of field-effect transistor. JFETs are three-terminal semiconductor devices that can be used as electronically controlled switches or resistors, or to build amplifier ...
with a
Schottky (
metal
A metal (from Greek μέταλλον ''métallon'', "mine, quarry, metal") is a material that, when freshly prepared, polished, or fractured, shows a lustrous appearance, and conducts electricity and heat relatively well. Metals are typicall ...
–
semiconductor
A semiconductor is a material which has an electrical resistivity and conductivity, electrical conductivity value falling between that of a electrical conductor, conductor, such as copper, and an insulator (electricity), insulator, such as glas ...
) junction instead of a
p–n junction
A p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor. The "p" (positive) side contains an excess of holes, while the "n" (negative) side contains ...
for a
gate
A gate or gateway is a point of entry to or from a space enclosed by walls. The word derived from old Norse "gat" meaning road or path; But other terms include ''yett and port''. The concept originally referred to the gap or hole in the wall ...
.
Construction
MESFETs are constructed in compound semiconductor technologies lacking high quality surface passivation, such as
gallium arsenide
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a Zincblende (crystal structure), zinc blende crystal structure.
Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monoli ...
,
indium phosphide
Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors.
Manufacturing
Indium phosphide ca ...
, or
silicon carbide
Silicon carbide (SiC), also known as carborundum (), is a hard chemical compound containing silicon and carbon. A semiconductor, it occurs in nature as the extremely rare mineral moissanite, but has been mass-produced as a powder and crystal sin ...
, and are faster but more expensive than silicon-based
JFET
The junction-gate field-effect transistor (JFET) is one of the simplest types of field-effect transistor. JFETs are three-terminal semiconductor devices that can be used as electronically controlled switches or resistors, or to build amplifier ...
s or
MOSFET
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which d ...
s. Production MESFETs are operated up to approximately 45 GHz, and are commonly used for
microwave
Microwave is a form of electromagnetic radiation with wavelengths ranging from about one meter to one millimeter corresponding to frequencies between 300 MHz and 300 GHz respectively. Different sources define different frequency ran ...
frequency
communications
Communication (from la, communicare, meaning "to share" or "to be in relation with") is usually defined as the transmission of information. The term may also refer to the message communicated through such transmissions or the field of inquir ...
and
radar
Radar is a detection system that uses radio waves to determine the distance (''ranging''), angle, and radial velocity of objects relative to the site. It can be used to detect aircraft, ships, spacecraft, guided missiles, motor vehicles, w ...
. The first MESFETs were developed in 1966, and a year later their
extremely high frequency
Extremely high frequency (EHF) is the International Telecommunication Union (ITU) designation for the band of radio frequencies in the electromagnetic spectrum from 30 to 300 gigahertz (GHz). It lies between the super high frequency band and the ...
RF microwave performance was demonstrated.
GaAs FET MESFET
radio-electronics.com.
Functional architecture
The MESFET, similarly to JFET, differs from the common insulated-gate FET
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: ''source'', ''gate'', and ''drain''. FETs contr ...
or MOSFET in that there is no insulator under the gate over the active switching region. This implies that the MESFET gate should, in transistor mode, be biased such that one has a reversed-biased depletion zone controlling the underlying channel, rather than a forward-conducting metal–semiconductor diode to the channel.
While this restriction inhibits certain circuit possibilities as the gate must remain reverse-biased and cannot therefore exceed a certain voltage of forward bias, MESFETs analog and digital devices work reasonably well if kept within the confines of design limits. The most critical aspect of the design is the gate metal extent over the switching region. Generally the narrower the gate modulated carrier channel the better the frequency handling abilities, overall. Spacing of the source and drain with respect to the gate, and the lateral extent of the gate are important though somewhat less critical design parameters.
MESFET current handling ability improves as the gate is elongated laterally, keeping the active region constant, however is limited by phase shift along the gate due to the transmission line effect. As a result, most production MESFETs use a built up top layer of low resistance metal on the gate, often producing a mushroom-like profile in cross section.
Applications
Numerous MESFET fabrication possibilities have been explored for a wide variety of semiconductor systems. Some of the main application areas are military communications
Military communications or military signals involve all aspects of communications, or conveyance of information, by armed forces. Military communications span from pre-history to the present. The earliest military communications were delivered b ...
, as front end low noise amplifier of microwave receivers in both military radar
Radar is a detection system that uses radio waves to determine the distance (''ranging''), angle, and radial velocity of objects relative to the site. It can be used to detect aircraft, ships, spacecraft, guided missiles, motor vehicles, w ...
devices and communication, commercial optoelectronics
Optoelectronics (or optronics) is the study and application of electronic devices and systems that find, detect and control light, usually considered a sub-field of photonics. In this context, ''light'' often includes invisible forms of radiatio ...
, satellite communication
A communications satellite is an artificial satellite that relays and amplifies radio telecommunication signals via a transponder; it creates a communication channel between a source transmitter and a receiver at different locations on Earth. C ...
, as power amplifier for output stage of microwave links, and as a power oscillator.
See also
* High electron mobility transistor
A high-electron-mobility transistor (HEMT), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) ...
(HEMT)
* Heterojunction bipolar transistor The heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) which uses differing semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it can handle s ...
References
{{DEFAULTSORT:Mesfet
Microwave technology
Transistor types
Field-effect transistors