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FET
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: ''source'', ''gate'', and ''drain''. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use either electrons (n-channel) or holes (p-channel) as charge carriers in their operation, but not both. Many different types of field effect transistors exist. Field effect transistors generally display very high input impedance at low frequencies. The most widely used field-effect transistor is the MOSFET (metal-oxide-semiconductor field-effect transistor). History The concept of a field-effect transistor (FET) was first patented by Austro-Hungarian physicist Julius Edgar Lilienfeld in 19 ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOSFET
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect transistor. The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925.Lilienfeld, Julius Edgar (1926-10-08) "Method and apparatus for controlling electric currents" upright=1.6, Two power MOSFETs in V_in_the_''off''_state,_and_can_conduct_a_continuous_current_of_30 surface-mount_packages._Operating_as_switches,_each_of_these_components_can_su ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
FET Cross Section
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs ( JFETs or MOSFETs) are devices with three terminals: ''source'', ''gate'', and ''drain''. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use either electrons (n-channel) or holes (p-channel) as charge carriers in their operation, but not both. Many different types of field effect transistors exist. Field effect transistors generally display very high input impedance at low frequencies. The most widely used field-effect transistor is the MOSFET (metal-oxide-semiconductor field-effect transistor). History The concept of a field-effect transistor (FET) was first patented by Austro-Hungarian physicist Julius Edgar Lilienfeld ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Transistor
upright=1.4, gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (pink). A transistor is a semiconductor device used to Electronic amplifier, amplify or electronic switch, switch electrical signals and electrical power, power. The transistor is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more are found embedded in integrated circuits. Austro-Hungarian physicist Julius Edgar Lilienfeld proposed the concept of a field-effect transistor in 1926, but it was not possible to actually cons ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Junction Field-effect Transistor
The junction-gate field-effect transistor (JFET) is one of the simplest types of field-effect transistor. JFETs are three-terminal semiconductor devices that can be used as electronically controlled switches or resistors, or to build amplifiers. Unlike bipolar junction transistors, JFETs are exclusively voltage-controlled in that they do not need a biasing current. Electric charge flows through a semiconducting channel between ''source'' and ''drain'' terminals. By applying a reverse bias voltage to a ''gate'' terminal, the channel is ''pinched'', so that the electric current is impeded or switched off completely. A JFET is usually conducting when there is zero voltage between its gate and source terminals. If a potential difference of the proper polarity is applied between its gate and source terminals, the JFET will be more resistive to current flow, which means less current would flow in the channel between the source and drain terminals. JFETs are sometimes referred t ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
JFET
The junction-gate field-effect transistor (JFET) is one of the simplest types of field-effect transistor. JFETs are three-terminal semiconductor devices that can be used as electronically controlled switches or resistors, or to build amplifiers. Unlike bipolar junction transistors, JFETs are exclusively voltage-controlled in that they do not need a biasing current. Electric charge flows through a semiconducting channel between ''source'' and ''drain'' terminals. By applying a reverse bias voltage to a ''gate'' terminal, the channel is '' pinched'', so that the electric current is impeded or switched off completely. A JFET is usually conducting when there is zero voltage between its gate and source terminals. If a potential difference of the proper polarity is applied between its gate and source terminals, the JFET will be more resistive to current flow, which means less current would flow in the channel between the source and drain terminals. JFETs are sometimes referred ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Semiconductor Device
A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state, rather than as free electrons across a vacuum (typically liberated by thermionic emission) or as free electrons and ions through an ionized gas. Semiconductor devices are manufactured both as single discrete devices and as integrated circuit (IC) chips, which consist of two or more devices—which can number from the hundreds to the billions—manufactured and interconnected on a single semiconductor wafer (also called a substrate). Semiconductor materials are useful because their behavior can be easily manipulated by the deliberate addition of impurities, known as doping ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Bell Labs
Nokia Bell Labs, originally named Bell Telephone Laboratories (1925–1984), then AT&T Bell Laboratories (1984–1996) and Bell Labs Innovations (1996–2007), is an American industrial Research and development, research and scientific development S.A. (corporation), company owned by multinational company Nokia. With headquarters located in Murray Hill, New Jersey, Murray Hill, New Jersey, the company operates several laboratories in the United States and around the world. Researchers working at Bell Laboratories are credited with the development of radio astronomy, the transistor, the laser, the photovoltaic cell, the charge-coupled device (CCD), information theory, the Unix operating system, and the programming languages B (programming language), B, C (programming language), C, C++, S (programming language), S, SNOBOL, AWK, AMPL, and others. Nine Nobel Prizes have been awarded for work completed at Bell Laboratories. Bell Labs had its origin in the complex corporate organizat ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Static Induction Transistor
The static induction transistor (SIT) is a type of field-effect transistor (FET) capable of high-speed and high-power operation, with low distortion and low noise. It is a vertical structure device with short multichannel. The device was originally known as a VFET, with V being short for vertical. Being a vertical device, the SIT structure offers advantages in obtaining higher breakdown voltages than a conventional FET. For the SIT, the breakdown voltage is not limited by the surface breakdown between gate and drain, allowing it to operate at a very high current and voltage. The SIT has a current-voltage characteristic similar to a vacuum tube triode and it was therefore used in high-end audio products, including power amplifiers from Sony in the second half of the 1970s and Yamaha from 1973-1980. The Sony n-channel SIT had the model number 2SK82 with its p-channel complement named 2SJ28. Characteristics An SIT has: *short channel length *low gate series resistance *low gate-sou ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Oskar Heil
Oskar Heil (20 March 1908, in Langwieden – 15 May 1994, San Mateo, California) was a German electrical engineer and inventor. He studied physics, chemistry, mathematics, and music at the University of Göttingen, Georg-August University of Göttingen and was awarded his Doctor of Philosophy, PhD in 1933, for his work on molecular spectroscopy. Personal life At the Georg-August University in Göttingen, Oskar Heil met Agnesa Arsenjewa (Агнесса Николаевна Арсеньева, 1901–1991), a promising young Russian physicist who also earned her PhD there. They married in Leningrad, the Soviet Union in 1934. Together they moved to the United Kingdom to work in the Cavendish Laboratory, University of Cambridge. While on a trip to Italy, they co-wrote a pioneering paper on the generation of microwaves which was published in Germany in the ''Zeitschrift für Physik'' (i.e., ''Journal on Physics'') in 1935. Agnesa subsequently returned to Russia to pursue this work ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Charge Carrier
In physics, a charge carrier is a particle or quasiparticle that is free to move, carrying an electric charge, especially the particles that carry electric charges in electrical conductors. Examples are electrons, ions and holes. The term is used most commonly in solid state physics. In a conducting medium, an electric field can exert force on these free particles, causing a net motion of the particles through the medium; this is what constitutes an electric current. In conducting media, particles serve to carry charge: *In many metals, the charge carriers are electrons. One or two of the valence electrons from each atom are able to move about freely within the crystal structure of the metal. The free electrons are referred to as conduction electrons, and the cloud of free electrons is called a Fermi gas. Many metals have electron and hole bands. In some, the majority carriers are holes. *In electrolytes, such as salt water, the charge carriers are ions, which are a ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Julius Edgar Lilienfeld (1881-1963)
Julius Edgar Lilienfeld (April 18, 1882 – August 28, 1963) was an Austro-Hungarian, and later American (where he moved in 1921) physicist and electrical engineer, who was credited with the first patent on the field-effect (FET) (1925). Because of his failure to publish articles in learned journals and because high-purity semiconductor materials were not available yet, his FET patent never achieved fame, causing confusion for later inventors. Early life Lilienfeld was born into a German-speaking Ashkenazi Jewish family in Lemberg (present-day Lviv) in the Austrian part of the Austro-Hungarian Empire. Education Between 1900 and 1904, Lilienfeld studied at the Friedrich-Wilhelms-Universität (renamed Humboldt University in 1949), in Berlin, where he received his Ph.D. on February 18, 1905. In 1905, he started work at the physics institute at Leipzig University as an untenured professor. Career Lilienfeld's early career, at the University of Leipzig, saw him conduct impor ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Julius Edgar Lilienfeld
Julius Edgar Lilienfeld (April 18, 1882 – August 28, 1963) was an Austro-Hungarian, and later American (where he moved in 1921) physicist and electrical engineer, who was credited with the first patent on the field-effect (FET) (1925). Because of his failure to publish articles in learned journals and because high-purity semiconductor materials were not available yet, his FET patent never achieved fame, causing confusion for later inventors. Early life Lilienfeld was born into a German-speaking Ashkenazi Jewish family in Lemberg (present-day Lviv) in the Austrian part of the Austro-Hungarian Empire. Education Between 1900 and 1904, Lilienfeld studied at the Friedrich-Wilhelms-Universität (renamed Humboldt University in 1949), in Berlin Berlin ( , ) is the capital and largest city of Germany by both area and population. Its 3.7 million inhabitants make it the European Union's most populous city, according to population within city limits. One of Germany's si ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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