|
Sonos Radio
SONOS, short for "silicon–oxide–nitride–oxide–silicon", more precisely, "polycrystalline silicon"—"silicon dioxide"—"silicon nitride"—"silicon dioxide"—"silicon", is a cross sectional structure of MOSFET (metal-oxide-semiconductor field-effect transistor), realized by P.C.Y. Chen of Fairchild Camera and Instrument in 1977. This structure is often used for non-volatile memories, such as EEPROM and flash memories. It is sometimes used for TFT LCD displays. It is one of CTF (charge trap flash) variants. It is distinguished from traditional non-volatile memory structures by the use of silicon nitride (Si3N4 or Si9N10) instead of "polysilicon-based FG (floating-gate)" for the charge storage material. A further variant is "SHINOS" ("silicon"—" hi-k"—"nitride"—"oxide"—"silicon"), which is substituted top oxide layer with high-κ material. Another advanced variant is "MONOS" ("metal–oxide–nitride–oxide–silicon"). Companies offering SONOS-based ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Polycrystalline Silicon
Polycrystalline silicon, or multicrystalline silicon, also called polysilicon, poly-Si, or mc-Si, is a high purity, polycrystalline form of silicon, used as a raw material by the solar photovoltaic and electronics industry. Polysilicon is produced from metallurgical grade silicon by a chemical purification process, called the Siemens process. This process involves distillation of volatile silicon compounds, and their decomposition into silicon at high temperatures. An emerging, alternative process of refinement uses a fluidized bed reactor. The photovoltaic industry also produces upgraded metallurgical-grade silicon (UMG-Si), using metallurgical instead of chemical purification processes. When produced for the electronics industry, polysilicon contains impurity levels of less than one part per billion (ppb), while polycrystalline solar grade silicon (SoG-Si) is generally less pure. A few companies from China, Germany, Japan, Korea and the United States, such as GCL-Poly, Wacker ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Cypress Semiconductor
Cypress Semiconductor was an American semiconductor design and manufacturing company. It offered NOR flash memories, F-RAM and SRAM Traveo microcontrollers, PSoC programmable system-on-chip solutions, analog and PMIC Power Management ICs, CapSense capacitive touch-sensing controllers, Wireless BLE Bluetooth Low-Energy and USB connectivity solutions. Its headquarters were in San Jose, California, with operations in the United States, Ireland, India and the Philippines. In April 2016, Cypress Semiconductors announced the acquisition of Broadcom’s Wireless Internet of Things Business. The deal was closed in July 2016. In June 2019, Infineon Technologies announced it would acquire Cypress for $9.4 billion. The deal closed in April 2020, making Infineon one of the world's top 10 semiconductor manufacturers. Some of its main competitors included Microchip Technology, NXP Semiconductors, Renesas Electronics and Micron Technology. History Founding and early years It was ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Threshold Voltage
The threshold voltage, commonly abbreviated as Vth or VGS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (VGS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency. When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead. This is somewhat confusing since ''pinch off'' applied to insulated-gate field-effect transistor (IGFET) refers to the channel pinching that leads to current saturation behaviour under high source–drain bias, even though the current is never off. Unlike ''pinch off'', the term ''threshold voltage'' is unambiguous and refers to the same concept in any field-effect transistor. Basic principles In n-channel ''enhancement-mode'' devices, a conductive channel does not exist naturally within the transistor, and a positive gate-to-source voltage is necessary to create one su ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Quantum Tunnelling
Quantum tunnelling, also known as tunneling ( US) is a quantum mechanical phenomenon whereby a wavefunction can propagate through a potential barrier. The transmission through the barrier can be finite and depends exponentially on the barrier height and barrier width. The wavefunction may disappear on one side and reappear on the other side. The wavefunction and its first derivative are continuous. In steady-state, the probability flux in the forward direction is spatially uniform. No particle or wave is lost. Tunneling occurs with barriers of thickness around 1–3 nm and smaller. Some authors also identify the mere penetration of the wavefunction into the barrier, without transmission on the other side as a tunneling effect. Quantum tunneling is not predicted by the laws of classical mechanics where surmounting a potential barrier requires sufficient kinetic energy. Quantum tunneling plays an essential role in physical phenomena such as nuclear fusion and alpha radioact ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electrons
The electron ( or ) is a subatomic particle with a negative one elementary electric charge. Electrons belong to the first generation of the lepton particle family, and are generally thought to be elementary particles because they have no known components or substructure. The electron's mass is approximately 1/1836 that of the proton. Quantum mechanical properties of the electron include an intrinsic angular momentum ( spin) of a half-integer value, expressed in units of the reduced Planck constant, . Being fermions, no two electrons can occupy the same quantum state, in accordance with the Pauli exclusion principle. Like all elementary particles, electrons exhibit properties of both particles and waves: They can collide with other particles and can be diffracted like light. The wave properties of electrons are easier to observe with experiments than those of other particles like neutrons and protons because electrons have a lower mass and hence a longer de Broglie wav ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electrostatic
Electrostatics is a branch of physics that studies electric charges at rest (static electricity). Since classical times, it has been known that some materials, such as amber, attract lightweight particles after rubbing. The Greek word for amber, (), was thus the source of the word 'electricity'. Electrostatic phenomena arise from the forces that electric charges exert on each other. Such forces are described by Coulomb's law. Even though electrostatically induced forces seem to be rather weak, some electrostatic forces are relatively large. The force between an electron and a proton, which together make up a hydrogen atom, is about 36 orders of magnitude stronger than the gravitational force acting between them. There are many examples of electrostatic phenomena, from those as simple as the attraction of plastic wrap to one's hand after it is removed from a package, to the apparently spontaneous explosion of grain silos, the damage of electronic components during manufacturi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Transistor
upright=1.4, gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (pink). A transistor is a semiconductor device used to Electronic amplifier, amplify or electronic switch, switch electrical signals and electrical power, power. The transistor is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more are found embedded in integrated circuits. Austro-Hungarian physicist Julius Edgar Lilienfeld proposed the concept of a field-effect transistor in 1926, but it was not possible to actually constru ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Polysilicon
Polycrystalline silicon, or multicrystalline silicon, also called polysilicon, poly-Si, or mc-Si, is a high purity, polycrystalline form of silicon, used as a raw material by the solar photovoltaic and electronics industry. Polysilicon is produced from metallurgical grade silicon by a chemical purification process, called the Siemens process. This process involves distillation of volatile silicon compounds, and their decomposition into silicon at high temperatures. An emerging, alternative process of refinement uses a fluidized bed reactor. The photovoltaic industry also produces upgraded metallurgical-grade silicon (UMG-Si), using metallurgical instead of chemical purification processes. When produced for the electronics industry, polysilicon contains impurity levels of less than one part per billion (ppb), while polycrystalline solar grade silicon (SoG-Si) is generally less pure. A few companies from China, Germany, Japan, Korea and the United States, such as GCL-Poly, Wacker Ch ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Memory Cell (computing)
The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 (high voltage level) and reset to store a logic 0 (low voltage level). Its value is maintained/stored until it is changed by the set/reset process. The value in the memory cell can be accessed by reading it. Over the history of computing, different memory cell architectures have been used, including core memory and bubble memory. Today, the most common memory cell architecture is MOS memory, which consists of metal–oxide–semiconductor (MOS) memory cells. Modern random-access memory (RAM) uses MOS field-effect transistors (MOSFETs) as flip-flops, along with MOS capacitors for certain types of RAM. The SRAM ( static RAM) memory cell is a type of flip-flop circuit, typically implemented using MOSFETs. These require very low power to keep the stored value when not being accessed. A second ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
SONOS Cell Structure
SONOS, short for "silicon–oxide–nitride–oxide–silicon", more precisely, " polycrystalline silicon"—"silicon dioxide"—"silicon nitride"—"silicon dioxide"—"silicon", is a cross sectional structure of MOSFET (metal-oxide-semiconductor field-effect transistor), realized by P.C.Y. Chen of Fairchild Camera and Instrument in 1977. This structure is often used for non-volatile memories, such as EEPROM and flash memories. It is sometimes used for TFT LCD displays. It is one of CTF (charge trap flash) variants. It is distinguished from traditional non-volatile memory structures by the use of silicon nitride (Si3N4 or Si9N10) instead of "polysilicon-based FG (floating-gate)" for the charge storage material. A further variant is "SHINOS" ("silicon"—" hi-k"—"nitride"—"oxide"—"silicon"), which is substituted top oxide layer with high-κ material. Another advanced variant is "MONOS" ("metal–oxide–nitride–oxide–silicon"). Companies offering SONOS-based ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
.jpg "Click for more on -> Transistor"){kind=spacer}
