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Polycide
Polycide is a silicide formed over polysilicon. Widely used in DRAMs. In a polycide MOSFET transistor process, the silicide is formed only over the polysilicon film as formation occurs prior to any polysilicon etch. Polycide processes contrast with salicide The term salicide refers to a technology used in the microelectronics industry used to form electrical contacts between the semiconductor device and the supporting interconnect structure. The salicide process involves the reaction of a metal th ... processes in which silicide is formed after the polysilicon etch. Thus, with a salicide process, silicide is formed over both the polysilicon gate and the exposed monocrystalline terminal regions of the transistor in a self-aligned fashion. {{Chemistry-stub Semiconductor device fabrication Silicon ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Silicide
A silicide is a type of chemical compound that combines silicon and a (usually) more electropositive element. Silicon is more electropositive than carbon. Silicides are structurally closer to borides than to carbides. Similar to borides and carbides, the composition of silicides cannot be easily specified as covalent molecules. The chemical bonds in silicides range from conductive metal-like structures to covalent or ionic. Silicides of all non-transition metals, with exception of beryllium, have been described. Overview Silicon atoms in silicides can have many possible organizations: *Isolated silicon atoms: electrically conductive (or semiconductive) CrSi, MnSi, FeSi, CoSi, , , , , and nonconductive , *Si2 pairs: , hafnium and thorium silicides *Si4 tetrahedra: KSi, RbSi, CsSi *Si''n'' chains: USi, , CaSi, SrSi, YSi *Planar hexagonal graphite-like Si layers: β-USi2, silicides of other lanthanoids and actinoids *Corrugated hexagonal Si layers: CaSi2 *Open three-dimensio ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Polysilicon
Polycrystalline silicon, or multicrystalline silicon, also called polysilicon, poly-Si, or mc-Si, is a high purity, polycrystalline form of silicon, used as a raw material by the solar photovoltaic and electronics industry. Polysilicon is produced from metallurgical grade silicon by a chemical purification process, called the Siemens process. This process involves distillation of volatile silicon compounds, and their decomposition into silicon at high temperatures. An emerging, alternative process of refinement uses a fluidized bed reactor. The photovoltaic industry also produces upgraded metallurgical-grade silicon (UMG-Si), using metallurgical instead of chemical purification processes. When produced for the electronics industry, polysilicon contains impurity levels of less than one part per billion (ppb), while polycrystalline solar grade silicon (SoG-Si) is generally less pure. A few companies from China, Germany, Japan, Korea and the United States, such as GCL-Poly, Wacker Ch ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
DRAM
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal-oxide-semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. The electric charge on the capacitors gradually leaks away; without intervention the data on the capacitor would soon be lost. To prevent this, DRAM requires an external ''memory refresh'' circuit which periodically rewrites the data in the capacitors, restoring them to their original charge. This refresh process is the defining characteristic of dynamic random-access memory, in contrast to static random-access memory (SRA ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOSFET
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect transistor. The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925.Lilienfeld, Julius Edgar (1926-10-08) "Method and apparatus for controlling electric currents" upright=1.6, Two power MOSFETs in V_in_the_''off''_state,_and_can_conduct_a_continuous_current_of_30 surface-mount_packages._Operating_as_switches,_each_of_these_components_can_su ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Transistor
upright=1.4, gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (pink). A transistor is a semiconductor device used to Electronic amplifier, amplify or electronic switch, switch electrical signals and electrical power, power. The transistor is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more are found embedded in integrated circuits. Austro-Hungarian physicist Julius Edgar Lilienfeld proposed the concept of a field-effect transistor in 1926, but it was not possible to actually constru ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Salicide
The term salicide refers to a technology used in the microelectronics industry used to form electrical contacts between the semiconductor device and the supporting interconnect structure. The salicide process involves the reaction of a metal thin film with silicon in the active regions of the device, ultimately forming a metal silicide contact through a series of annealing and/or etch processes. The term "salicide" is a compaction of the phrase self-aligned silicide. The description "self-aligned" suggests that the contact formation does not require photolithography patterning processes, as opposed to a non-aligned technology such as polycide. The term salicide is also used to refer to the metal silicide formed by the contact formation process, such as "titanium salicide", although this usage is inconsistent with accepted naming conventions in chemistry. Contact Formation The salicide process begins with deposition of a thin transition metal layer over fully formed and pat ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Self-aligned Gate
In semiconductor electronics fabrication technology, a self-aligned gate is a transistor manufacturing approach whereby the gate electrode of a MOSFET (metal–oxide–semiconductor field-effect transistor) is used as a mask for the doping of the source and drain regions. This technique ensures that the gate is naturally and precisely aligned to the edges of the source and drain. The use of self-aligned gates in MOS transistors is one of the key innovations that led to the large increase in computing power in the 1970s. Self-aligned gates are still used in most modern integrated circuit processes. Introduction IC construction Integrated circuits (ICs, or "chips") are produced in a multi-step process that builds up multiple layers on the surface of a disk of silicon known as a "wafer". Each layer is patterned by coating the wafer in photoresist and then exposing it to ultraviolet light being shone through a stencil-like "mask". Depending on the process, the photoresist that ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Semiconductor Device Fabrication
Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuit (IC) chips such as modern computer processors, microcontrollers, and memory chips such as NAND flash and DRAM that are present in everyday electrical and electronics, electronic devices. It is a multiple-step sequence of Photolithography, photolithographic and chemical processing steps (such as surface passivation, thermal oxidation, planar process, planar diffusion and p–n junction isolation, junction isolation) during which electronic circuits are gradually created on a wafer (electronics), wafer made of pure semiconducting material. Silicon is almost always used, but various compound semiconductors are used for specialized applications. The entire manufacturing process takes time, from start to packaged chips ready for shipment, at least six to eight weeks (tape-out only, not including the circuit design) and is performed in highly specialized semiconduct ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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