|
Nanowire Lasers
Semiconductor nanowire lasers are nano-scaled lasers that can be embedded on chips and constitute an advance for computing and information processing applications. Nanowire lasers are coherent light sources (single mode optical waveguides) as any other laser device, with the advantage of operating at the nanoscale. Built by molecular beam epitaxy, nanowire lasers offer the possibility for direct integration on silicon, and the construction of optical interconnects and data communication at the chip scale. Nanowire lasers are built from III–V semiconductor heterostructures. Their unique 1D configuration and high refractive index allow for low optical loss and recirculation in the active nanowire core region. This enables subwavelength laser sizes of only a few hundred nanometers. Nanowires are Fabry–Perot resonator cavities defined by the end facets of the wire, therefore they do not require polishing or cleaving for high-reflectivity facets as in conventional lasers. Properties ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Nanolaser
A nanolaser is a laser that has nanoscale dimensions and it refers to a micro-/nano- device which can emit light with light or electric excitation of nanowires or other nanomaterials that serve as resonators. A standard feature of nanolasers includes their light confinement on a scale approaching or suppressing the diffraction limit of light. These tiny lasers can be modulated quickly and, combined with their small footprint, this makes them ideal candidates for on-chip optical computing. History Albert Einstein proposed the stimulated emission in 1916, which contributed to the first demonstration of laser in 1961. From then on, people have been pursuing the miniaturization of lasers for more compact size and less energy consumption all the time. Since people noticed that light has different interactions with matter at the nanoscale in the 1990s, significant progress has been made to achieve the miniaturization of lasers and increase power conversion efficiency. Various types of n ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Nanowire Laser
A nanowire is a nanostructure in the form of a wire with the diameter of the order of a nanometre (10−9 metres). More generally, nanowires can be defined as structures that have a thickness or diameter constrained to tens of nanometers or less and an unconstrained length. At these scales, quantum mechanical effects are important—which coined the term "quantum wires". Many different types of nanowires exist, including superconducting (e.g. YBCO), metallic (e.g. Ni, Pt, Au, Ag), semiconducting (e.g. silicon nanowires (SiNWs), InP, GaN) and insulating (e.g. SiO2, TiO2). Molecular nanowires are composed of repeating molecular units either organic (e.g. DNA) or inorganic (e.g. Mo6S9−xIx). Characteristics upright=1.2, Crystalline 2×2-atom tin selenide nanowire grown inside a single-wall carbon nanotube (tube diameter ~1 nm). file:HgTe@SWCNT.png, A noise-filtered HRTEM image of a HgTe extreme nanowire embedded down the central pore of a SWCNT. The image is also accom ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Semiconductor
A semiconductor is a material which has an electrical resistivity and conductivity, electrical conductivity value falling between that of a electrical conductor, conductor, such as copper, and an insulator (electricity), insulator, such as glass. Its electrical resistivity and conductivity, resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities ("doping (semiconductor), doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created. The behavior of charge carriers, which include electrons, ions, and electron holes, at these junctions is the basis of diodes, transistors, and most modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most common s ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Lasers
A laser is a device that emits light through a process of optical amplification based on the stimulated emission of electromagnetic radiation. The word "laser" is an acronym for "light amplification by stimulated emission of radiation". The first laser was built in 1960 by Theodore H. Maiman at Hughes Research Laboratories, based on theoretical work by Charles Hard Townes and Arthur Leonard Schawlow. A laser differs from other sources of light in that it emits light which is coherence (physics), ''coherent''. Spatial coherence allows a laser to be focused to a tight spot, enabling applications such as laser cutting and Photolithography#Light sources, lithography. Spatial coherence also allows a laser beam to stay narrow over great distances (collimated light, collimation), enabling applications such as laser pointers and lidar (light detection and ranging). Lasers can also have high temporal coherence, which allows them to emit light with a very narrow frequency spectrum, spectr ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Molecular Beam Epitaxy
Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices, including transistors, and it is considered one of the fundamental tools for the development of nanotechnologies. MBE is used to fabricate diodes and MOSFETs (MOS field-effect transistors) at microwave frequencies, and to manufacture the lasers used to read optical discs (such as CDs and DVDs). History Original ideas of MBE process were first established by Günther. Films he deposited were not epitaxial, but were deposited on glass substrates. With the development of vacuum technology, MBE process was demonstrated by Davey and Pankey who succeeded in growing GaAs epitaxial films on single crystal GaAs substrates using Günther's method. Major subsequent development of MBE films was enabled by J.R. Arthur's investigations of kinetic behavior of growth mechanisms and Alfred Y. Cho's in situ observation of MBE process usi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Semiconductor Laser
The laser diode chip removed and placed on the eye of a needle for scale A laser diode (LD, also injection laser diode or ILD, or diode laser) is a semiconductor device similar to a light-emitting diode in which a diode pumped directly with electrical current can create lasing conditions at the diode's junction. Driven by voltage, the doped p–n-transition allows for recombination of an electron with a hole. Due to the drop of the electron from a higher energy level to a lower one, radiation, in the form of an emitted photon is generated. This is spontaneous emission. Stimulated emission can be produced when the process is continued and further generates light with the same phase, coherence and wavelength. The choice of the semiconductor material determines the wavelength of the emitted beam, which in today's laser diodes range from infra-red to the UV spectrum. Laser diodes are the most common type of lasers produced, with a wide range of uses that include fiber optic comm ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Nanowire
A nanowire is a nanostructure in the form of a wire with the diameter of the order of a nanometre (10−9 metres). More generally, nanowires can be defined as structures that have a thickness or diameter constrained to tens of nanometers or less and an unconstrained length. At these scales, quantum mechanical effects are important—which coined the term "quantum wires". Many different types of nanowires exist, including superconducting (e.g. Yttrium barium copper oxide, YBCO), metallic (e.g. nickel, Ni, platinum, Pt, gold, Au, Ag), semiconducting (e.g. Silicon nanowire, silicon nanowires (SiNWs), indium phosphide, InP, gallium nitride, GaN) and insulating (e.g. Silicon dioxide, SiO2, Titanium dioxide, TiO2). Molecular nanowires are composed of repeating molecular units either organic (e.g. DNA) or inorganic (e.g. Mo6S9−xIx). Characteristics file:SnSe@SWCNT.jpg, upright=1.2, Crystalline 2×2-atom tin selenide nanowire grown inside a single-wall carbon nanotube (tube diamete ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Molecular Beam Epitaxy
Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices, including transistors, and it is considered one of the fundamental tools for the development of nanotechnologies. MBE is used to fabricate diodes and MOSFETs (MOS field-effect transistors) at microwave frequencies, and to manufacture the lasers used to read optical discs (such as CDs and DVDs). History Original ideas of MBE process were first established by Günther. Films he deposited were not epitaxial, but were deposited on glass substrates. With the development of vacuum technology, MBE process was demonstrated by Davey and Pankey who succeeded in growing GaAs epitaxial films on single crystal GaAs substrates using Günther's method. Major subsequent development of MBE films was enabled by J.R. Arthur's investigations of kinetic behavior of growth mechanisms and Alfred Y. Cho's in situ observation of MBE process usi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Nanoelectronics
Nanoelectronics refers to the use of nanotechnology in electronic components. The term covers a diverse set of devices and materials, with the common characteristic that they are so small that inter-atomic interactions and quantum mechanical properties need to be studied extensively. Some of these candidates include: hybrid molecular/semiconductor electronics, one-dimensional nanotubes/nanowires (e.g. silicon nanowires or carbon nanotubes) or advanced molecular electronics. Nanoelectronic devices have critical dimensions with a size range between 1 nm and 100 nm. Recent silicon MOSFET (metal-oxide-semiconductor field-effect transistor, or MOS transistor) technology generations are already within this regime, including 22 nanometers CMOS (complementary MOS) nodes and succeeding 14 nm, 10 nm and 7 nm FinFET (fin field-effect transistor) generations. Nanoelectronics is sometimes considered as disruptive technology because present candidates are significantly different f ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Semiconductors
A semiconductor is a material which has an electrical resistivity and conductivity, electrical conductivity value falling between that of a electrical conductor, conductor, such as copper, and an insulator (electricity), insulator, such as glass. Its electrical resistivity and conductivity, resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities ("doping (semiconductor), doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created. The behavior of charge carriers, which include electrons, ions, and electron holes, at these junctions is the basis of diodes, transistors, and most modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most common s ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
_250_nm_by_250_nm_image_of_one-atom-thick_silver_islands_grown_on_palladium_(111)_surface.png "Click for more on -> Molecular Beam Epitaxy")
