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Erasable Programmable ROM
An EPROM (rarely EROM), or erasable programmable read-only memory, is a type of programmable read-only memory (PROM) chip that retains its data when its power supply is switched off. Computer memory that can retrieve stored data after a power supply has been turned off and back on is called non-volatile. It is an array of floating-gate transistors individually programmed by an electronic device that supplies higher voltages than those normally used in digital circuits. Once programmed, an EPROM can be erased by exposing it to strong ultraviolet (UV) light source (such as from a mercury-vapor lamp). EPROMs are easily recognizable by the transparent fused quartz (or on later models' resin) window on the top of the package, through which the silicon chip is visible, and which permits exposure to ultraviolet light during erasing. It was invented by Dov Frohman in 1971. Operation Development of the EPROM memory cell started with investigation of faulty integrated circuits where t ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Frank Wanlass
Frank Marion Wanlass (May 17, 1933, in Thatcher, AZ – September 9, 2010, in Santa Clara, California) was an American electrical engineer. He is best known for inventing, along with Chih-Tang Sah, CMOS (complementary MOS) logic in 1963. CMOS has since become the standard semiconductor device fabrication process for MOSFETs (metal–oxide–semiconductor field-effect transistors). Biography He obtained his PhD from the University of Utah. Wanlass invented CMOS (complementary MOS) logic circuits with Chih-Tang Sah in 1963, while working at Fairchild Semiconductor. Wanlass was given U.S. patent #3,356,858 for "Low Stand-By Power Complementary Field Effect Circuitry" in 1967.IC Knowledge - History of the Integrated Circuit - 1960s In 1963, while studying |
Voltage
Voltage, also known as (electrical) potential difference, electric pressure, or electric tension, is the difference in electric potential between two points. In a Electrostatics, static electric field, it corresponds to the Work (electrical), work needed per unit of Electric charge, charge to move a positive Test particle#Electrostatics, test charge from the first point to the second point. In the SI unit, International System of Units (SI), the SI derived unit, derived unit for voltage is the ''volt'' (''V''). The voltage between points can be caused by the build-up of electric charge (e.g., a capacitor), and from an electromotive force (e.g., electromagnetic induction in a Electric generator, generator). On a macroscopic scale, a potential difference can be caused by electrochemical processes (e.g., cells and batteries), the pressure-induced piezoelectric effect, and the thermoelectric effect. Since it is the difference in electric potential, it is a physical Scalar (physics ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Floating Gate Transistor
The floating-gate MOSFET (FGMOS), also known as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate is electrically isolated, creating a floating node in direct current, and a number of secondary gates or inputs are deposited above the floating gate (FG) and are electrically isolated from it. These inputs are only capacitively connected to the FG. Since the FG is surrounded by highly resistive material, the charge contained in it remains unchanged for long periods of time, typically longer than 10 years in modern devices. Usually Fowler-Nordheim tunneling and hot-carrier injection mechanisms are used to modify the amount of charge stored in the FG. The FGMOS is commonly used as a floating-gate memory cell, the digital storage element in EPROM, EEPROM and flash memory technologies. Other uses of the FGMOS include a neuronal computational element in neural networks, analog storage ele ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Amplifier
An amplifier, electronic amplifier or (informally) amp is an electronic device that can increase the magnitude of a signal (a time-varying voltage or current). It is a two-port electronic circuit that uses electric power from a power supply to increase the amplitude (magnitude of the voltage or current) of a signal applied to its input terminals, producing a proportionally greater amplitude signal at its output. The amount of amplification provided by an amplifier is measured by its gain: the ratio of output voltage, current, or power to input. An amplifier is defined as a circuit that has a power gain greater than one. An amplifier can be either a separate piece of equipment or an electrical circuit contained within another device. Amplification is fundamental to modern electronics, and amplifiers are widely used in almost all electronic equipment. Amplifiers can be categorized in different ways. One is by the frequency of the electronic signal being amplified. For ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Floating-gate
The floating-gate MOSFET (FGMOS), also known as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate is electrically isolated, creating a floating node in direct current, and a number of secondary gates or inputs are deposited above the floating gate (FG) and are electrically isolated from it. These inputs are only capacitively connected to the FG. Since the FG is surrounded by highly resistive material, the charge contained in it remains unchanged for long periods of time, typically longer than 10 years in modern devices. Usually Fowler-Nordheim tunneling and hot-carrier injection mechanisms are used to modify the amount of charge stored in the FG. The FGMOS is commonly used as a floating-gate memory cell, the digital storage element in EPROM, EEPROM and flash memory technologies. Other uses of the FGMOS include a neuronal computational element in neural networks, analog storage el ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Field-effect Transistor
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the current through a semiconductor. It comes in two types: junction FET (JFET) and metal-oxide-semiconductor FET (MOSFET). FETs have three terminals: ''source'', ''gate'', and ''drain''. FETs control the current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use either electrons (n-channel) or holes (p-channel) as charge carriers in their operation, but not both. Many different types of field effect transistors exist. Field effect transistors generally display very high input impedance at low frequencies. The most widely used field-effect transistor is the MOSFET (metal–oxide–semiconductor field-effect transistor). History The concept of a field-effect transistor (FET) was first patented by the Austr ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Intel
Intel Corporation is an American multinational corporation and technology company headquartered in Santa Clara, California, and Delaware General Corporation Law, incorporated in Delaware. Intel designs, manufactures, and sells computer components such as central processing units (CPUs) and related products for business and consumer markets. It is one of the world's List of largest semiconductor chip manufacturers, largest semiconductor chip manufacturers by revenue, and ranked in the Fortune 500, ''Fortune'' 500 list of the List of largest companies in the United States by revenue, largest United States corporations by revenue for nearly a decade, from 2007 to 2016 Fiscal year, fiscal years, until it was removed from the ranking in 2018. In 2020, it was reinstated and ranked 45th, being the List of Fortune 500 computer software and information companies, 7th-largest technology company in the ranking. It was one of the first companies listed on Nasdaq. Intel supplies List of I ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Read-only Memory
Read-only memory (ROM) is a type of non-volatile memory used in computers and other electronic devices. Data stored in ROM cannot be electronically modified after the manufacture of the memory device. Read-only memory is useful for storing software that is rarely changed during the life of the system, also known as firmware. Software applications, such as video games, for programmable devices can be distributed as ROM cartridge, plug-in cartridges containing ROM. Strictly speaking, ''read-only memory'' refers to hard-wired memory, such as diode matrix or a #Solid-state ROM, mask ROM integrated circuit (IC), that cannot be electronically changed after manufacture. Although discrete circuits can be altered in principle, through the addition of Jump wire, bodge wires and the removal or replacement of components, ICs cannot. Correction of errors, or updates to the software, require new devices to be manufactured and to replace the installed device. Floating-gate ROM semiconductor ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Floating Gate MOSFET
The floating-gate MOSFET (FGMOS), also known as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate is electrically isolated, creating a floating node in direct current, and a number of secondary gates or inputs are deposited above the floating gate (FG) and are electrically isolated from it. These inputs are only capacitively connected to the FG. Since the FG is surrounded by highly resistive material, the charge contained in it remains unchanged for long periods of time, typically longer than 10 years in modern devices. Usually Fowler-Nordheim tunneling and hot-carrier injection mechanisms are used to modify the amount of charge stored in the FG. The FGMOS is commonly used as a floating-gate memory cell, the digital storage element in EPROM, EEPROM and flash memory technologies. Other uses of the FGMOS include a neuronal computational element in neural networks, analog storag ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Simon Min Sze
Simon Min Sze, or Shi Min (; 21 March 1936 – 6 November 2023), was a Taiwanese-American electrical engineer. He is best known for inventing the floating-gate MOSFET with Korean electrical engineer Dawon Kahng in 1967. Early life and education Simon Min Sze was born in Nanjing, Jiangsu, and grew up in Taiwan. After graduating from the National Taiwan University in 1957, he received a master's degree from the University of Washington in 1960 and a doctorate from Stanford University in 1963. Career and research Sze worked for Bell Labs until 1990, after which he returned to Taiwan and joined the faculty of National Chiao Tung University. He is well known for his work in semiconductor physics and technology, including his 1967 invention (with Dawon Kahng) of the floating-gate transistor, now widely used in non-volatile semiconductor memory devices. He wrote and edited many books, including ''Physics of Semiconductor Devices'', one of the most-cited texts in its field. Dea ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Dawon Kahng
Dawon Kahng (; May 4, 1931 – May 13, 1992) was a Korean-American electrical engineer and inventor, known for his work in solid-state electronics. He is best known for inventing the MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor), along with his colleague Mohamed Atalla, in 1959. Kahng and Atalla developed both the PMOS and NMOS processes for MOSFET semiconductor device fabrication. The MOSFET is the most widely used type of transistor, and the basic element in most modern electronic equipment. Kahng and Atalla later proposed the concept of the MOS integrated circuit, and they did pioneering work on Schottky diodes and nanolayer-base transistors in the early 1960s. Kahng then invented the floating-gate MOSFET (FGMOS) with Simon Min Sze in 1967. Kahng and Sze proposed that FGMOS could be used as floating-gate memory cells for non-volatile memory (NVM) and reprogrammable read-only memory (ROM), which became the basis for EPROM (eras ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
