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Floating-gate
The floating-gate MOSFET (FGMOS), also known as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate is electrically isolated, creating a floating node in direct current, and a number of secondary gates or inputs are deposited above the floating gate (FG) and are electrically isolated from it. These inputs are only capacitively connected to the FG. Since the FG is surrounded by highly resistive material, the charge contained in it remains unchanged for long periods of time, nowadays typically longer than 10 years. Usually Fowler-Nordheim tunneling and hot-carrier injection mechanisms are used to modify the amount of charge stored in the FG. The FGMOS is commonly used as a floating-gate memory cell, the digital storage element in EPROM, EEPROM and flash memory technologies. Other uses of the FGMOS include a neuronal computational element in neural networks, analog storage element, di ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Flash Memory
Flash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use the same cell design, consisting of floating gate MOSFETs. They differ at the circuit level depending on whether the state of the bit line or word lines is pulled high or low: in NAND flash, the relationship between the bit line and the word lines resembles a NAND gate; in NOR flash, it resembles a NOR gate. Flash memory, a type of floating-gate memory, was invented at Toshiba in 1980 and is based on EEPROM technology. Toshiba began marketing flash memory in 1987. EPROMs had to be erased completely before they could be rewritten. NAND flash memory, however, may be erased, written, and read in blocks (or pages), which generally are much smaller than the entire device. NOR flash memory allows a single machine word to be written to an era ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Memory Cell (computing)
The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 (high voltage level) and reset to store a logic 0 (low voltage level). Its value is maintained/stored until it is changed by the set/reset process. The value in the memory cell can be accessed by reading it. Over the history of computing, different memory cell architectures have been used, including core memory and bubble memory. Today, the most common memory cell architecture is MOS memory, which consists of metal–oxide–semiconductor (MOS) memory cells. Modern random-access memory (RAM) uses MOS field-effect transistors (MOSFETs) as flip-flops, along with MOS capacitors for certain types of RAM. The SRAM ( static RAM) memory cell is a type of flip-flop circuit, typically implemented using MOSFETs. These require very low power to keep the stored value when not being accessed. A second ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Dawon Kahng
Dawon Kahng ( ko, 강대원; May 4, 1931 – May 13, 1992) was a Korean-American electrical engineer and inventor, known for his work in solid-state electronics. He is best known for inventing the MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor), along with his colleague Mohamed Atalla, in 1959. Kahng and Atalla developed both the PMOS and NMOS processes for MOSFET semiconductor device fabrication. The MOSFET is the most widely used type of transistor, and the basic element in most modern electronic equipment. Kahng and Atalla later proposed the concept of the MOS integrated circuit, and they did pioneering work on Schottky diodes and nanolayer-base transistors in the early 1960s. Kahng then invented the floating-gate MOSFET (FGMOS) with Simon Min Sze in 1967. Kahng and Sze proposed that FGMOS could be used as floating-gate memory cells for non-volatile memory (NVM) and reprogrammable read-only memory (ROM), which became the basis for EPROM ( ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
EEPROM
EEPROM (also called E2PROM) stands for electrically erasable programmable read-only memory and is a type of non-volatile memory used in computers, usually integrated in microcontrollers such as smart cards and remote keyless systems, or as a separate chip device to store relatively small amounts of data by allowing individual bytes to be erased and reprogrammed. EEPROMs are organized as arrays of floating-gate transistors. EEPROMs can be programmed and erased in-circuit, by applying special programming signals. Originally, EEPROMs were limited to single-byte operations, which made them slower, but modern EEPROMs allow multi-byte page operations. An EEPROM has a limited life for erasing and reprogramming, now reaching a million operations in modern EEPROMs. In an EEPROM that is frequently reprogrammed, the life of the EEPROM is an important design consideration. Flash memory is a type of EEPROM designed for high speed and high density, at the expense of large erase blocks (ty ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Simon Min Sze
Simon Min Sze, or Shi Min (; born 1936), is a Chinese-American electrical engineer. He is best known for inventing the floating-gate MOSFET with Korean electrical engineer Dawon Kahng in 1967. Biography Sze was born in Nanjing, Jiangsu, and grew up in Taiwan. After graduating from the National Taiwan University in 1957, he received a master's degree from the University of Washington in 1960 and a doctorate from Stanford University in 1963. He worked for Bell Labs until 1990, after which he returned to Taiwan and joined the faculty of National Chiao Tung University. He is well known for his work in semiconductor physics and technology, including his 1967 invention (with Dawon Kahng) of the floating-gate transistor, now widely used in non-volatile semiconductor memory devices. He has written and edited many books, including ''Physics of Semiconductor Devices'', one of the most-cited texts in its field. Sze received the J. J. Ebers Award in 1991 for his work in electr ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
EPROM
An EPROM (rarely EROM), or erasable programmable read-only memory, is a type of programmable read-only memory (PROM) chip that retains its data when its power supply is switched off. Computer memory that can retrieve stored data after a power supply has been turned off and back on is called non-volatile. It is an array of floating-gate transistors individually programmed by an electronic device that supplies higher voltages than those normally used in digital circuits. Once programmed, an EPROM can be erased by exposing it to strong ultraviolet light source (such as from a mercury-vapor lamp). EPROMs are easily recognizable by the transparent fused quartz (or on later models resin) window on the top of the package, through which the silicon chip is visible, and which permits exposure to ultraviolet light during erasing. Operation Development of the EPROM memory cell started with investigation of faulty integrated circuits where the gate connections of transistors had broken ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Non-volatile Storage
Non-volatile memory (NVM) or non-volatile storage is a type of computer memory that can retain stored information even after power is removed. In contrast, volatile memory needs constant power in order to retain data. Non-volatile memory typically refers to storage in semiconductor memory chips, which store data in floating-gate memory cells consisting of floating-gate MOSFETs (metal–oxide–semiconductor field-effect transistors), including flash memory storage such as NAND flash and solid-state drives (SSD). Other examples of non-volatile memory include read-only memory (ROM), EPROM (erasable programmable ROM) and EEPROM (electrically erasable programmable ROM), ferroelectric RAM, most types of computer data storage devices (e.g. disk storage, hard disk drives, optical discs, floppy disks, and magnetic tape), and early computer storage methods such as punched tape and cards. Overview Non-volatile memory is typically used for the task of secondary storage or long-term pe ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Semiconductor Memory
Semiconductor memory is a digital electronic semiconductor device used for digital data storage, such as computer memory. It typically refers to devices in which data is stored within metal–oxide–semiconductor (MOS) memory cells on a silicon integrated circuit memory chip. There are numerous different types using different semiconductor technologies. The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell. Non-volatile memory (such as EPROM, EEPROM and flash memory) uses floating-gate memory cells, which consist of a single floating-gate transistor per cell. Most types of semiconductor memory have the property of random access, which means that it takes the same amount of time to access any memory location, so data can be efficiently accessed in any random order. This contrasts with data storage media such as hard disks and CDs which ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Computer Memory
In computing, memory is a device or system that is used to store information for immediate use in a computer or related computer hardware and digital electronic devices. The term ''memory'' is often synonymous with the term ''primary storage'' or '' main memory''. An archaic synonym for memory is store. Computer memory operates at a high speed compared to storage that is slower but less expensive and higher in capacity. Besides storing opened programs, computer memory serves as disk cache and write buffer to improve both reading and writing performance. Operating systems borrow RAM capacity for caching so long as not needed by running software. If needed, contents of the computer memory can be transferred to storage; a common way of doing this is through a memory management technique called ''virtual memory''. Modern memory is implemented as semiconductor memory, where data is stored within memory cells built from MOS transistors and other components on an integrated c ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
The Bell System Technical Journal
The ''Bell Labs Technical Journal'' is the in-house scientific journal for scientists of Nokia Bell Labs, published yearly by the IEEE society. The managing editor is Charles Bahr. The journal was originally established as the ''Bell System Technical Journal'' (BSTJ) in New York by the American Telephone and Telegraph Company (AT&T) in 1922, published under this name until 1983, when the breakup of the Bell System placed various parts of the system into separate companies. The journal was devoted to the scientific fields and engineering disciplines practiced in the Bell System for improvements in the wide field of electrical communication. After the restructuring of Bell Labs in 1984, the journal was renamed to ''AT&T Bell Laboratories Technical Journal''. In 1985, it was published as the ''AT&T Technical Journal'' until 1996, when it was renamed to ''Bell Labs Technical Journal''. History The ''Bell System Technical Journal'' was published by AT&T in New York City through its In ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Transconductance
Transconductance (for transfer conductance), also infrequently called mutual conductance, is the electrical characteristic relating the current through the output of a device to the voltage across the input of a device. Conductance is the reciprocal of resistance. Transadmittance (or transfer admittance) is the AC equivalent of transconductance. Definition Transconductance is very often denoted as a conductance, ''g''m, with a subscript, m, for ''mutual''. It is defined as follows: :g_m = \frac For small signal alternating current, the definition is simpler: :g_m = \frac The SI unit for transconductance is the siemens, with the symbol S, as in conductance. Transresistance Transresistance (for transfer resistance), also infrequently referred to as mutual resistance, is the dual of transconductance. It refers to the ratio between a change of the voltage at two output points and a related change of current through two input points, and is notated as ''r''m: :r_m = \frac ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Floating Gate Transistor-en
Floating may refer to: * a type of dental work performed on horse teeth * use of an isolation tank * the guitar-playing technique where chords are sustained rather than scratched * ''Floating'' (play), by Hugh Hughes * Floating (psychological phenomenon), slipping into altered states * Floating exchange rate, a market-valued currency * Floating voltage, and floating ground, a voltage or ground in an electric circuit that is not connected to the Earth or another reference voltage * Floating point, a representation in computing of rational numbers most commonly associated with the IEEE 754 standard * ''Floating'' (film), a 1997 American drama film Albums and songs * ''Floating'' (Eloy album) (1974) * ''Floating'' (Ketil Bjørnstad album) (2005) * ''Floating'' (EP), a 1991 EP by Bill Callahan * "Floating" (The Moody Blues song) (1969) * "Floating" (Megan Rochell song) (2006) * "Floating" (Jape song) (2004) * "Floating", a song by Jolin Tsai from the 2000 album '' Don't Stop' ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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