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Three-dimensional Integrated Circuit
A three-dimensional integrated circuit (3D IC) is a MOS (metal-oxide semiconductor) integrated circuit (IC) manufactured by stacking as many as 16 or more ICs and interconnecting them vertically using, for instance, through-silicon vias (TSVs) or Cu-Cu connections, so that they behave as a single device to achieve performance improvements at reduced power and smaller footprint than conventional two dimensional processes. The 3D IC is one of several 3D integration schemes that exploit the z-direction to achieve electrical performance benefits in microelectronics and nanoelectronics. 3D integrated circuits can be classified by their level of interconnect hierarchy at the global ( package), intermediate (bond pad) and local (transistor) level. In general, 3D integration is a broad term that includes such technologies as 3D wafer-level packaging (3DWLP); 2.5D and 3D interposer-based integration; 3D stacked ICs (3D-SICs); monolithic 3D ICs; 3D heterogeneous integration; and ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOSFET
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect transistor. The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925.Lilienfeld, Julius Edgar (1926-10-08) "Method and apparatus for controlling electric currents" upright=1.6, Two power MOSFETs in watt.html" ;"title="amperes">A in the ''on'' state, dissipating up to about 100 watt">W and controlling a load of over 2000 W. A matchstick is pictured ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Interposer
An interposer is an electrical interface routing between one socket or connection to another. The purpose of an interposer is to spread a connection to a wider pitch or to reroute a connection to a different connection. Interposer comes from the Latin word "interpōnere", meaning "to put between". They are often used in BGA packages, multi-chip modules and high bandwidth memory. A common example of an interposer is an integrated circuit die to BGA, such as in the Pentium II. This is done through various substrates, both rigid and flexible, most commonly FR4 for rigid, and polyimide for flexible. Silicon and glass are also evaluated as an integration method. Interposer stacks are also a widely accepted, cost-effective alternative to 3D ICs. There are already several products with interposer technology in the market, notably the AMD Fiji/Fury GPU, and the Xilinx Virtex-7 FPGA. In 2016, CEA Leti demonstrated their second generation 3D-NoC technology which combines small ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Wafer (electronics)
In electronics, a wafer (also called a slice or substrate) is a thin slice of semiconductor, such as a crystalline silicon (c-Si), used for the fabrication of integrated circuits and, in photovoltaics, to manufacture solar cells. The wafer serves as the substrate for microelectronic devices built in and upon the wafer. It undergoes many microfabrication processes, such as doping, ion implantation, etching, thin-film deposition of various materials, and photolithographic patterning. Finally, the individual microcircuits are separated by wafer dicing and packaged as an integrated circuit. History In the semiconductor or silicon wafer industry, the term wafer appeared in the 1950s to describe a thin round slice of semiconductor material, typically germanium or silicon. Round shape comes from single-crystal ingots usually produced using the Czochralski method. Silicon wafers were first introduced in the 1940s. By 1960, silicon wafers were being manufactured in the U.S. by c ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
High Bandwidth Memory
High Bandwidth Memory (HBM) is a high-speed computer memory interface for 3D-stacked synchronous dynamic random-access memory (SDRAM) initially from Samsung, AMD and SK Hynix. It is used in conjunction with high-performance graphics accelerators, network devices, high-performance datacenter AI ASICs and FPGAs and in some supercomputers (such as the NEC SX-Aurora TSUBASA and Fujitsu A64FX). The first HBM memory chip was produced by SK Hynix in 2013, and the first devices to use HBM were the AMD Fiji GPUs in 2015. High Bandwidth Memory has been adopted by JEDEC as an industry standard in October 2013.High Bandwidth Memory (HBM) DRAM (JESD235) JEDEC, October 2013 The second generation, HBM2, was accepted by JEDEC in January 2016. Technology ...
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Hybrid Memory Cube
Hybrid Memory Cube (HMC) is a high-performance computer random-access memory (RAM) interface for through-silicon vias (TSV)-based stacked DRAM memory competing with the incompatible rival interface High Bandwidth Memory (HBM). Overview Hybrid Memory Cube was co-developed by Samsung Electronics and Micron Technology in 2011, and announced by Micron in September 2011.Micron Reinvents DRAM Memory Linley Group, Jag Bolaria, 12 September 2011 It promised a 15 times speed improvement over . The Hybrid Memory Cube Consortium (HMCC) is backed by several major technology companies including |
DDR4
Double Data Rate 4 Synchronous Dynamic Random-Access Memory (DDR4 SDRAM) is a type of synchronous dynamic random-access memory with a high bandwidth ("double data rate") interface. Released to the market in 2014, it is a variant of dynamic random-access memory (DRAM), of which some have been in use since the early 1970s, and a higher-speed successor to the DDR2 and DDR3 technologies. DDR4 is not compatible with any earlier type of random-access memory (RAM) due to different signaling voltage and physical interface, besides other factors. DDR4 SDRAM was released to the public market in Q2 2014, focusing on ECC memory, while the non-ECC DDR4 modules became available in Q3 2014, accompanying the launch of Haswell-E processors that require DDR4 memory. Features The primary advantages of DDR4 over its predecessor, DDR3, include higher module density and lower voltage requirements, coupled with higher data rate transfer speeds. The DDR4 standard allows for DIMMs of up ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
SDRAM
Synchronous dynamic random-access memory (synchronous dynamic RAM or SDRAM) is any DRAM where the operation of its external pin interface is coordinated by an externally supplied clock signal. DRAM integrated circuits (ICs) produced from the early 1970s to early 1990s used an ''asynchronous'' interface, in which input control signals have a direct effect on internal functions only delayed by the trip across its semiconductor pathways. SDRAM has a ''synchronous'' interface, whereby changes on control inputs are recognised after a rising edge of its clock input. In SDRAM families standardized by JEDEC, the clock signal controls the stepping of an internal finite-state machine that responds to incoming commands. These commands can be pipelined to improve performance, with previously started operations completing while new commands are received. The memory is divided into several equally sized but independent sections called ''banks'', allowing the device to operate on a memory ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Dynamic Random-access Memory
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal-oxide-semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. The electric charge on the capacitors gradually leaks away; without intervention the data on the capacitor would soon be lost. To prevent this, DRAM requires an external '' memory refresh'' circuit which periodically rewrites the data in the capacitors, restoring them to their original charge. This refresh process is the defining characteristic of dynamic random-access memory, in contrast to static random-access memory (S ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
JEDEC
The JEDEC Solid State Technology Association is an independent semiconductor engineering trade organization and standardization body headquartered in Arlington County, Virginia, United States. JEDEC has over 300 members, including some of the world's largest computer companies. Its scope and past activities includes standardization of part numbers, defining an electrostatic discharge (ESD) standard, and leadership in the lead-free manufacturing transition. The origin of JEDEC traces back to 1944, when RMA (subsequently renamed EIA) and NEMA established the Joint Electron Tube Engineering Council (JETEC) to coordinate vacuum tube type numberings. In 1958, with the advent of semiconductor technology, the joint JETEC-activity of EIA and NEMA was renamed into Joint Electron Device Engineering Council. NEMA discontinued its involvement in 1979. In the fall of 1999, JEDEC became a separate trade association under the current name, but maintained an EIA alliance, until EIA ceased ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Central Processing Unit
A central processing unit (CPU), also called a central processor, main processor or just processor, is the electronic circuitry that executes instructions comprising a computer program. The CPU performs basic arithmetic, logic, controlling, and input/output (I/O) operations specified by the instructions in the program. This contrasts with external components such as main memory and I/O circuitry, and specialized processors such as graphics processing units (GPUs). The form, design, and implementation of CPUs have changed over time, but their fundamental operation remains almost unchanged. Principal components of a CPU include the arithmetic–logic unit (ALU) that performs arithmetic and logic operations, processor registers that supply operands to the ALU and store the results of ALU operations, and a control unit that orchestrates the fetching (from memory), decoding and execution (of instructions) by directing the coordinated operations of the ALU, registers and oth ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Semiconductor Memory
Semiconductor memory is a digital electronic semiconductor device used for digital data storage, such as computer memory. It typically refers to devices in which data is stored within metal–oxide–semiconductor (MOS) memory cells on a silicon integrated circuit memory chip. There are numerous different types using different semiconductor technologies. The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell. Non-volatile memory (such as EPROM, EEPROM and flash memory) uses floating-gate memory cells, which consist of a single floating-gate transistor per cell. Most types of semiconductor memory have the property of random access, which means that it takes the same amount of time to access any memory location, so data can be efficiently accessed in any random order. This contrasts with data storage media such as hard disks and ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
3DS Die Stacking Concept Model
The is a handheld game console produced by Nintendo. It was announced in March 2010 and unveiled at E3 2010 as the successor to the Nintendo DS. The system features backward compatibility with Nintendo DS video games. As an eighth-generation console, its primary competitor was Sony's PlayStation Vita. The handheld's most prominent feature is its ability to display stereoscopic 3D effects without the use of 3D glasses or additional accessories, and it offers new features such as the StreetPass and SpotPass tag modes, powered by Nintendo Network; augmented reality using its 3D cameras; and Virtual Console, which allows owners to download and play games originally released on older video game systems. The Nintendo 3DS was released in Japan on February 26, 2011, and worldwide beginning in March 2011. Less than six months later on July 28, 2011, Nintendo announced a significant price reduction from US$249 to US$169 amid disappointing launch sales. The company offered ten free ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
