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DDR3 SDRAM
Double Data Rate 3 Synchronous Dynamic Random-Access Memory (DDR3 SDRAM) is a type of synchronous dynamic random-access memory (SDRAM) with a high bandwidth (" double data rate") interface, and has been in use since 2007. It is the higher-speed successor to DDR and DDR2 and predecessor to DDR4 synchronous dynamic random-access memory (SDRAM) chips. DDR3 SDRAM is neither forward nor backward compatible with any earlier type of random-access memory (RAM) because of different signaling voltages, timings, and other factors. DDR3 is a DRAM interface specification. The actual DRAM arrays that store the data are similar to earlier types, with similar performance. The primary benefit of DDR3 SDRAM over its immediate predecessor DDR2 SDRAM, is its ability to transfer data at twice the rate (eight times the speed of its internal memory arrays), enabling higher bandwidth or peak data rates. The DDR3 standard permits DRAM chip capacities of up to 8 gigabits (Gbit) (so 1 gigabyte by ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
JEDEC
The Joint Electron Device Engineering Council (JEDEC) Solid State Technology Association is a consortium of the semiconductor industry headquartered in Arlington County, Virginia, Arlington, United States. It has over 300 members and is focused on standardization of part numbers, defining an electrostatic discharge (ESD) standard, and leadership in the RoHS, lead-free manufacturing transition. The origin of JEDEC traces back to 1944, when Radio Manufacturers Association, RMA (subsequently renamed Electronic Industries Alliance , EIA) and National Electrical Manufacturers Association, NEMA established the Joint Electron Tube Engineering Council (JETEC) to coordinate vacuum tube type list of vacuum tubes, numberings. In 1958, with the advent of semiconductor technology, the joint JETEC-activity of Electronic Industries Association, EIA and NEMA was renamed into Joint Electron Device Engineering Council. NEMA discontinued its involvement in 1979. In the fall of 1999, JEDEC became ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Core I7
Intel Core is a line of multi-core (with the exception of Core Solo and Core 2 Solo) central processing units (CPUs) for midrange, embedded, workstation, high-end and enthusiast computer markets marketed by Intel Corporation. These processors displaced the existing mid- to high-end Pentium processors at the time of their introduction, moving the Pentium to the entry level. Identical or more capable versions of Core processors are also sold as Xeon processors for the server and workstation markets. Core was launched in January 2006 as a mobile-only series, consisting of single- and dual-core models. It was then succeeded later in July by the Core 2 series, which included both desktop and mobile processors with up to four cores, and introduced 64-bit support. Since 2008, Intel began introducing the Core i3, Core i5, Core i7 and Core i9 lineup of processors, succeeding Core 2. A new naming scheme debuted in 2023, consisting of Core 3, Core 5, and Core 7 for mainstream processors ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Memory Timings
Memory timings or RAM timings describe the timing information of a memory module or the onboard LPDDRx. Due to the inherent qualities of VLSI and microelectronics, memory chips require time to fully execute commands. Executing commands too quickly will result in data corruption and results in system instability. With appropriate time between commands, memory modules/chips can be given the opportunity to fully switch transistors, charge capacitors and correctly signal back information to the memory controller. Because system performance depends on how fast memory can be used, this timing directly affects the performance of the system. The timing of modern synchronous dynamic random-access memory (SDRAM) is commonly indicated using four parameters: CL, TRCD, TRP, and TRAS in units of clock cycles; they are commonly written as four numbers separated with hyphens, ''e.g.'' 7-8-8-24. The fourth (tRAS) is often omitted, or a fifth, the Command rate, sometimes added (normally 2T or 1T, a ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Hertz
The hertz (symbol: Hz) is the unit of frequency in the International System of Units (SI), often described as being equivalent to one event (or Cycle per second, cycle) per second. The hertz is an SI derived unit whose formal expression in terms of SI base units is 1/s or s−1, meaning that one hertz is one per second or the Inverse second, reciprocal of one second. It is used only in the case of periodic events. It is named after Heinrich Hertz, Heinrich Rudolf Hertz (1857–1894), the first person to provide conclusive proof of the existence of electromagnetic waves. For high frequencies, the unit is commonly expressed in metric prefix, multiples: kilohertz (kHz), megahertz (MHz), gigahertz (GHz), terahertz (THz). Some of the unit's most common uses are in the description of periodic waveforms and musical tones, particularly those used in radio- and audio-related applications. It is also used to describe the clock speeds at which computers and other electronics are driven. T ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Framebuffer
A framebuffer (frame buffer, or sometimes framestore) is a portion of random-access memory (RAM) containing a bitmap that drives a video display. It is a memory buffer containing data representing all the pixels in a complete video frame. Modern video cards contain framebuffer circuitry in their cores. This circuitry converts an in-memory bitmap into a video signal that can be displayed on a computer monitor. In computing, a screen buffer is a part of computer memory used by a computer application for the representation of the content to be shown on the computer display. The screen buffer may also be called the video buffer, the regeneration buffer, or regen buffer for short. Screen buffers should be distinguished from video memory. To this end, the term off-screen buffer is also used. The information in the buffer typically consists of color values for every pixel to be shown on the display. Color values are commonly stored in 1-bit binary (monochrome), 4-bit palettized, 8 ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Clock Signal
In electronics and especially synchronous digital circuits, a clock signal (historically also known as ''logic beat'') is an electronic logic signal (voltage or current) which oscillates between a high and a low state at a constant frequency and is used like a metronome to synchronize actions of digital circuits. In a synchronous logic circuit, the most common type of digital circuit, the clock signal is applied to all storage devices, flip-flops and latches, and causes them all to change state simultaneously, preventing race conditions. A clock signal is produced by an electronic oscillator called a clock generator. The most common clock signal is in the form of a square wave with a 50% duty cycle. Circuits using the clock signal for synchronization may become active at either the rising edge, falling edge, or, in the case of double data rate, both in the rising and in the falling edges of the clock cycle. Digital circuits Most integrated circuits (ICs) of suffi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Double Data Rate
In computing, double data rate (DDR) describes a computer bus that transfers data on both the rising and falling edges of the clock signal and hence doubles the memory bandwidth by transferring data twice per clock cycle. This is also known as double pumped, dual-pumped, and double transition. The term toggle mode is used in the context of NAND flash memory. Overview The simplest way to design a clocked electronic circuit is to make it perform one transfer per full cycle (rise and fall) of a clock signal. This, however, requires that the clock signal changes twice per transfer, while the data lines change at most once per transfer. When operating at a high bandwidth, signal integrity limitations constrain the clock frequency. By using both edges of the clock, the data signals operate with the same limiting frequency, thereby doubling the data transmission rate. This technique has been used for microprocessor front-side busses, Ultra-3 SCSI, expansion buses ( AGP, PCI ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Prefetch Buffer
Synchronous dynamic random-access memory (synchronous dynamic RAM or SDRAM) is any Dynamic random-access memory, DRAM where the operation of its external pin interface is coordinated by an externally supplied clock signal. DRAM integrated circuits (ICs) produced from the early 1970s to the early 1990s used an ''asynchronous'' interface, in which input control signals have a direct effect on internal functions delayed only by the trip across its semiconductor pathways. SDRAM has a ''synchronous'' interface, whereby changes on control inputs are recognised after a rising edge of its clock input. In SDRAM families standardized by JEDEC, the clock signal controls the stepping of an internal finite-state machine that responds to incoming commands. These commands can be pipelined to improve performance, with previously started operations completing while new commands are received. The memory is divided into several equally sized but independent sections called ''Memory bank, banks'', a ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Leakage (electronics)
In electronics, leakage is the gradual transfer of electrical energy across a boundary normally viewed as insulating, such as the spontaneous discharge of a charged capacitor, magnetic coupling of a transformer with other components, or flow of current across a transistor in the "off" state or a reverse-polarized diode. In capacitors Gradual loss of energy from a charged capacitor is primarily caused by electronic devices attached to the capacitors, such as transistors or diodes, which conduct a small amount of current even when they are turned off. Even though this off current is an order of magnitude less than the current through the device when it is on, the current still slowly discharges the capacitor. Another contributor to leakage from a capacitor is from the undesired imperfection of some dielectric materials used in capacitors, also known as ''dielectric leakage''. It is a result of the dielectric material not being a perfect insulator and having some non-zero conducti ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Multigate Device
A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate (transistor), gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET). The most widely used multi-gate devices are the FinFET (fin field-effect transistor) and the #GAAFET, GAAFET (gate-all-around field-effect transistor), which are non-planar transistors, or 3D transistors. Multi-gate transistors are one of the several strategies being developed by MOSFET, MOS semiconductor manufacturers to create ever-smaller microprocessors and memory cell (computing), memory cells, colloquially referred to as extending Moore's law ( ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Voltage
Voltage, also known as (electrical) potential difference, electric pressure, or electric tension, is the difference in electric potential between two points. In a Electrostatics, static electric field, it corresponds to the Work (electrical), work needed per unit of Electric charge, charge to move a positive Test particle#Electrostatics, test charge from the first point to the second point. In the SI unit, International System of Units (SI), the SI derived unit, derived unit for voltage is the ''volt'' (''V''). The voltage between points can be caused by the build-up of electric charge (e.g., a capacitor), and from an electromotive force (e.g., electromagnetic induction in a Electric generator, generator). On a macroscopic scale, a potential difference can be caused by electrochemical processes (e.g., cells and batteries), the pressure-induced piezoelectric effect, and the thermoelectric effect. Since it is the difference in electric potential, it is a physical Scalar (physics ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Transfer (computing)
In computer technology, transfers per second and its more common secondary terms gigatransfers per second (abbreviated as GT/s) and megatransfers per second (MT/s) are informal language that refer to the number of operations transferring data that occur in each second in some given data-transfer channel. It is also known as sample rate, i.e. the number of data samples captured per second, each sample normally occurring at the clock edge. The terms are neutral with respect to the method of physically accomplishing each such data-transfer operation; nevertheless, they are most commonly used in the context of transmission of digital data. is 106 or one million transfers per second; similarly, means 109, or equivalently in the US/ short scale, one billion transfers per second. Units These terms alone do not specify the bit rate at which binary data is being transferred because they do not specify the number of bits transferred in each transfer operation (known as the channel width ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
