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Float-zone Silicon
Float-zone silicon is very pure silicon obtained by vertical zone melting. The process was developed at Bell Labs by Henry Theuerer in 1955 as a modification of a method developed by William Gardner Pfann for germanium. In the vertical configuration molten silicon has sufficient surface tension to keep the charge from separating. The major advantages is crucibleless growth that prevents contamination of the silicon from the vessel itself and therefore an inherently high-purity alternative to Boule (crystal), boule crystals grown by the Czochralski method. The concentrations of light impurities, such as carbon (C) and oxygen (O2) elements, are extremely low. Another light impurity, nitrogen (N2), helps to control microdefects and also brings about an improvement in mechanical strength of the wafer (electronics), wafers, and is now being intentionally added during the growth stages. The diameters of float-zone wafers are generally not greater than 200 mm due to the surface tension ...
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Doping (semiconductor)
In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be ''low'' or ''light''. When many more dopant atoms are added, on the order of one per ten thousand atoms, the doping is referred to as ''high'' or ''heavy''. This is often shown as ''n+'' for n-type doping or ''p+'' for p-type doping. (''See the article on semiconductors for a more detailed description of the doping mechanism.'') A semiconductor doped to such high levels that it acts more like a conductor than a semiconductor is referred to as a degenerate semiconductor. A semiconductor can be considered i-type semiconductor if it has ...
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Semiconductor Growth
Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuit (IC) chips such as modern computer processors, microcontrollers, and memory chips such as NAND flash and DRAM that are present in everyday electrical and electronic devices. It is a multiple-step sequence of photolithographic and chemical processing steps (such as surface passivation, thermal oxidation, planar diffusion and junction isolation) during which electronic circuits are gradually created on a wafer made of pure semiconducting material. Silicon is almost always used, but various compound semiconductors are used for specialized applications. The entire manufacturing process takes time, from start to packaged chips ready for shipment, at least six to eight weeks (tape-out only, not including the circuit design) and is performed in highly specialized semiconductor fabrication plants, also called foundries or fabs. All fabrication takes place inside a ...
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Industrial Processes
Industrial processes are procedures involving chemical, physical, electrical or mechanical steps to aid in the manufacturing of an item or items, usually carried out on a very large scale. Industrial processes are the key components of heavy industry. Chemical processes by main basic material Certain chemical process yield important basic materials for society, e.g., (cement, steel, aluminum, and fertilizer). However, these chemical reactions contribute to climate change by emitting carbon dioxide, a greenhouse gas, through chemical reactions, as well as through the combustion of fossil fuels to generate the high temperatures needed to reach the activation energies of the chemical reactions. Cement (the paste within concrete) * Calcination – Limestone, which is largely composed of fossilized calcium carbonate (CaCO3), breaks down at high temperatures into useable calcium oxide (CaO) and carbon dioxide gas (), which gets released as a by-product. This chemical reaction, call ...
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Laser-heated Pedestal Growth
Laser-heated pedestal growth (LHPG) or laser floating zone (LFZ) is a crystal growth technique. A narrow region of a crystal is melted with a powerful CO2 or YAG laser. The laser and hence the floating zone, is moved along the crystal. The molten region melts impure solid at its forward edge and leaves a wake of purer material solidified behind it. This technique for growing crystals from the melt (liquid/solid phase transition) is used in materials research. Advantages The main advantages of this technique are the high pulling rates (60 times greater than the conventional Czochralski technique) and the possibility of growing materials with very high melting points. In addition, LHPG is a crucible-free technique, which allows single crystals to be grown with high purity and low stress. The geometric shape of the crystals (the technique can produce small diameters), and the low production cost, make the single-crystal fibers (SCF) produced by LHPG suitable substitutes for bulk c ...
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Micro-pulling-down
The micro-pulling-down (μ-PD) method is a crystal growth technique based on continuous transport of the melted substance through micro-channel(s) made in a crucible bottom. Continuous solidification of the melt is progressed on a liquid/solid interface positioned under the crucible. In a steady state, both the melt and the crystal are pulled-down with a constant (but generally different) velocity. Many different types of crystal are grown by this technique, including Y3Al5O12, Si, Si-Ge, LiNbO3, α-Al2O3, Y2O3, Sc2O3, LiF, CaF2, BaF2, etc. Crystal growth routine Standard routine procedure used in the growth of most of μ-PD crystals is well developed. The general stages of the growths include: * Charging of the crucible with starting materials (mixture of powders) * Heating of the crucible until starting materials in the crucible are completely melted * Upward displacement of the seed until its contact with the meniscus or crucible * Formation of the meniscus and p ...
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Bridgman–Stockbarger Method
The Bridgman–Stockbarger method, or Bridgman–Stockbarger technique, is named after Harvard physicist Percy Williams Bridgman (1882–1961) and MIT physicist Donald C. Stockbarger (1895–1952). The method includes two similar but distinct techniques primarily used for growing boules (single-crystal ingots), but which can be used for solidifying polycrystalline ingots as well. Overview The methods involve heating polycrystalline material above its melting point and slowly cooling it from one end of its container, where a seed crystal is located. A single crystal of the same crystallographic orientation as the seed material is grown on the seed and is progressively formed along the length of the container. The process can be carried out in a horizontal or vertical orientation, and usually involves a rotating crucible/ampoule to stir the melt. The Bridgman method is a popular way of producing certain semiconductor crystals such as gallium arsenide, for which the Czochralski me ...
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Solar Arrays
A photovoltaic system, also PV system or solar power system, is an electric power system designed to supply usable solar power by means of photovoltaics. It consists of an arrangement of several components, including solar panels to absorb and convert sunlight into electricity, a solar inverter to convert the output from direct to alternating current, as well as mounting, cabling, and other electrical accessories to set up a working system. It may also use a solar tracking system to improve the system's overall performance and include an integrated battery. PV systems convert light directly into electricity, and are not to be confused with other solar technologies, such as concentrated solar power or solar thermal, used for heating and cooling. A solar array only encompasses the ensemble of solar panels, the visible part of the PV system, and does not include all the other hardware, often summarized as balance of system (BOS). PV systems range from small, rooftop-mounted ...
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Lens
A lens is a transmissive optical device which focuses or disperses a light beam by means of refraction. A simple lens consists of a single piece of transparent material, while a compound lens consists of several simple lenses (''elements''), usually arranged along a common axis. Lenses are made from materials such as glass or plastic, and are ground and polished or molded to a desired shape. A lens can focus light to form an image, unlike a prism, which refracts light without focusing. Devices that similarly focus or disperse waves and radiation other than visible light are also called lenses, such as microwave lenses, electron lenses, acoustic lenses, or explosive lenses. Lenses are used in various imaging devices like telescopes, binoculars and cameras. They are also used as visual aids in glasses to correct defects of vision such as myopia and hypermetropia. History The word ''lens'' comes from '' lēns'', the Latin name of the lentil (a seed of a lentil plant), b ...
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Terahertz Radiation
Terahertz radiation – also known as submillimeter radiation, terahertz waves, tremendously high frequency (THF), T-rays, T-waves, T-light, T-lux or THz – consists of electromagnetic waves within the ITU-designated band of frequencies from 0.3 to 3  terahertz (THz), although the upper boundary is somewhat arbitrary and is considered by some sources as 30 THz. One terahertz is 1012  Hz or 1000 GHz. Wavelengths of radiation in the terahertz band correspondingly range from 1 mm to 0.1 mm = 100 µm. Because terahertz radiation begins at a wavelength of around 1 millimeter and proceeds into shorter wavelengths, it is sometimes known as the ''submillimeter band'', and its radiation as ''submillimeter waves'', especially in astronomy. This band of electromagnetic radiation lies within the transition region between microwave and far infrared, and can be regarded as either. Terahertz radiation is strongly absorbed by the gases o ...
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Photodetector
Photodetectors, also called photosensors, are sensors of light or other electromagnetic radiation. There is a wide variety of photodetectors which may be classified by mechanism of detection, such as Photoelectric effect, photoelectric or photochemical effects, or by various performance metrics, such as spectral response. Semiconductor-based photodetectors typically photo detector have a p–n junction that converts light photons into current. The absorbed photons make electron–hole pairs in the depletion region. Photodiodes and photo transistors are a few examples of photo detectors. Solar cells convert some of the light energy absorbed into electrical energy. Types Photodetectors may be classified by their mechanism for detection: * Photoemission or photoelectric effect: Photons cause electrons to transition from the conduction band of a material to free electrons in a vacuum or gas. * Thermal: Photons cause electrons to transition to mid-gap states then decay back to lo ...
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Power Semiconductor Device
A power semiconductor device is a semiconductor device used as a switch or rectifier in power electronics (for example in a switch-mode power supply). Such a device is also called a power device or, when used in an integrated circuit, a power IC. A power semiconductor device is usually used in "commutation mode" (i.e., it is either on or off), and therefore has a design optimized for such usage; it should usually not be used in linear operation. Linear power circuits are widespread as voltage regulators, audio amplifiers, and radio frequency amplifiers. Power semiconductors are found in systems delivering as little as a few tens of milliwatts for a headphone amplifier, up to around a gigawatt in a high voltage direct current transmission line. History The first electronic device used in power circuits was the electrolytic rectifier - an early version was described by a French experimenter, A. Nodon, in 1904. These were briefly popular with early radio experimenters as they c ...
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