Quantum Well Laser
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Quantum Well Laser
A quantum well laser is a laser diode in which the active region of the device is so narrow that quantum confinement occurs. Laser diodes are formed in compound semiconductor materials that (quite unlike silicon) are able to emit light efficiently. The wavelength of the light emitted by a quantum well laser is determined by the width of the active region rather than just the bandgap of the materials from which it is constructed.ForewordThe Origin of Quantum Wells and the Quantum Well Laser," by Charles H. Henry, in "Quantum Well Lasers," ed. by Peter S. Zory, Jr., Academic Press, 1993, pp. 1-13. This means that much shorter wavelengths can be obtained from quantum well lasers than from conventional laser diodes using a particular semiconductor material. The efficiency of a quantum well laser is also greater than a conventional laser diode due to the stepwise form of its density of states function. Origin of the concept of quantum wells In 1972, Charles H. Henry, a physicist ...
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Laser Diode
file:Laser diode chip.jpg, The laser diode chip removed and placed on the eye of a needle for scale A laser diode (LD, also injection laser diode or ILD, or diode laser) is a semiconductor device similar to a light-emitting diode in which a diode pumped directly with electrical current can create active laser medium, lasing conditions at the diode's p–n junction, junction. Driven by voltage, the doped p–n-transition allows for Carrier generation and recombination, recombination of an electron with a Electron hole, hole. Due to the drop of the electron from a higher energy level to a lower one, radiation, in the form of an emitted photon is generated. This is spontaneous emission. Stimulated emission can be produced when the process is continued and further generates light with the same phase, coherence and wavelength. The choice of the semiconductor material determines the wavelength of the emitted beam, which in today's laser diodes range from infra-red to the UV spectrum ...
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Metalorganic Vapour Phase Epitaxy
Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition. This takes place not in vacuum, but from the gas phase at moderate pressures (10 to 760 Torr). As such, this technique is preferred for the formation of devices incorporating thermodynamically metastable alloys, and it has become a major process in the manufacture of optoelectronics, such as Light-emitting diodes. It was invented in 1968 at North American Aviation (later Rockwell International) Science Center by Harold M. Manasevit. Basic principles In MOCVD ultrapure precursor gases are injected into a reactor, ...
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Phys
Physics is the natural science that studies matter, its fundamental constituents, its motion and behavior through space and time, and the related entities of energy and force. "Physical science is that department of knowledge which relates to the order of nature, or, in other words, to the regular succession of events." Physics is one of the most fundamental scientific disciplines, with its main goal being to understand how the universe behaves. "Physics is one of the most fundamental of the sciences. Scientists of all disciplines use the ideas of physics, including chemists who study the structure of molecules, paleontologists who try to reconstruct how dinosaurs walked, and climatologists who study how human activities affect the atmosphere and oceans. Physics is also the foundation of all engineering and technology. No engineer could design a flat-screen TV, an interplanetary spacecraft, or even a better mousetrap without first understanding the basic laws of physics. (. ...
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Nitride
In chemistry, a nitride is an inorganic compound of nitrogen. The "nitride" anion, N3- ion, is very elusive but compounds of nitride are numerous, although rarely naturally occuring. Some nitrides have a find applications, such as wear-resistant coatings (e.g., titanium nitride, TiN), hard ceramic materials (e.g., silicon nitride, Si3N4), and semiconductors (e.g., gallium nitride, GaN). The development of GaN-based light emitting diodes was recognized by the 2014 Nobel Prize in Physics. Metal nitrido complexes are also common. Synthesis of inorganic metal nitrides is challenging because nitrogen gas (N2) is not very reactive at low temperatures, but it becomes more reactive at higher temperatures. Therefore, a balance must be achieved between the low reactivity of nitrogen gas at low temperatures and the entropy driven formation of N2 at high temperatures. However, synthetic methods for nitrides are growing more sophisticated and the materials are of increasing technological re ...
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Joanna (Joka) Maria Vandenberg
Joanna (Joka) Maria Vandenberg (born 1938) is a Dutch solid state chemist and crystallographer who immigrated to the United States in 1968. At Bell Telephone Laboratories, she made a major contribution to the success of the Internet. She invented, developed, and applied the X-ray scanning tool for quality control essential to manufacturing indium gallium arsenide phosphide-based multi-quantum well lasers. These are the lasers that amplify and modulate light that travels through optical fibers that are at the heart of today's Internet. Early life Joanna Vandenberg was born January 24, 1938 in Heemstede, a small town near Amsterdam, where she was the youngest of a family of five, and the first one to go to college. Her family was in the tulip business. In 1956 she graduated cum laude from gymnasium-β and went to the State University of Leiden in the Netherlands where she received a B.S. in Physical Sciences and Mathematics, 1959 and a M.S. in Inorganic and Solid State Chemist ...
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Metalorganic Vapour Phase Epitaxy
Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition. This takes place not in vacuum, but from the gas phase at moderate pressures (10 to 760 Torr). As such, this technique is preferred for the formation of devices incorporating thermodynamically metastable alloys, and it has become a major process in the manufacture of optoelectronics, such as Light-emitting diodes. It was invented in 1968 at North American Aviation (later Rockwell International) Science Center by Harold M. Manasevit. Basic principles In MOCVD ultrapure precursor gases are injected into a reactor, ...
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Lucent
Lucent Technologies, Inc. was an American Multinational corporation, multinational telecommunications equipment company headquartered in Murray Hill, New Jersey, Murray Hill, New Jersey. It was established on September 30, 1996, through the divestiture of the former AT&T Technologies business unit of AT&T Corporation, which included Western Electric and Bell Labs. Lucent was merged with Alcatel SA of France on December 1, 2006, forming Alcatel-Lucent. Alcatel-Lucent was absorbed by Nokia in January 2016. Name Lucent means "light-bearing" in Latin (language), Latin. The name was applied for in 1996 at the time of the split from AT&T. The name was widely criticised, as the logo was to be, both internally and externally. Corporate communications and business cards included the strapline 'Bell Labs Innovations' in a bid to retain the prestige of the internationally famous research lab, within a new business under an as-yet unknown name. This same linguistic root also gives Lucife ...
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Indium Gallium Arsenide Phosphide
Indium gallium arsenide phosphide () is a quaternary compound semiconductor material, an alloy of gallium arsenide, gallium phosphide, indium arsenide, or indium phosphide. This compound has applications in photonic devices, due to the ability to tailor its band gap via changes in the alloy mole ratios, ''x'' and ''y''. Indium phosphide-based photonic integrated circuits, or PICs, commonly use alloys of to construct quantum wells, waveguides and other photonic structures, lattice matched to an InP substrate, enabling single-crystal epitaxial growth onto InP. Many devices operating in the near-infrared 1.55 μm wavelength window utilize this alloy, and are employed as optical components (such as laser transmitters, photodetectors and modulators) in C-band communications systems. Fraunhofer Institute for Solar Energy Systems ISE reported a triple-junction solar cell utilizing . The cell has very high efficiency of 35.9% (claimed to be a record). See also * Indium gallium ...
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Optical Fibers
An optical fiber, or optical fibre in Commonwealth English, is a flexible, transparent fiber made by drawing glass (silica) or plastic to a diameter slightly thicker than that of a human hair. Optical fibers are used most often as a means to transmit light between the two ends of the fiber and find wide usage in fiber-optic communications, where they permit transmission over longer distances and at higher bandwidths (data transfer rates) than electrical cables. Fibers are used instead of metal wires because signals travel along them with less loss; in addition, fibers are immune to electromagnetic interference, a problem from which metal wires suffer. Fibers are also used for illumination and imaging, and are often wrapped in bundles so they may be used to carry light into, or images out of confined spaces, as in the case of a fiberscope. Specially designed fibers are also used for a variety of other applications, some of them being fiber optic sensors and fiber lasers. ...
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Fiber Optic Communication
Fiber-optic communication is a method of transmitting information from one place to another by sending pulses of infrared light through an optical fiber. The light is a form of carrier wave that is modulated to carry information. Fiber is preferred over electrical cabling when high bandwidth, long distance, or immunity to electromagnetic interference is required. This type of communication can transmit voice, video, and telemetry through local area networks or across long distances. Optical fiber is used by many telecommunications companies to transmit telephone signals, internet communication, and cable television signals. Researchers at Bell Labs have reached a record bandwidth–distance product of over kilometers per second using fiber-optic communication. Background First developed in the 1970s, fiber-optics have revolutionized the telecommunications industry and have played a major role in the advent of the Information Age. Because of its advantages over electrical ...
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Quantum Cascade Laser
Quantum-cascade lasers (QCLs) are semiconductor lasers that emit in the mid- to far-infrared portion of the electromagnetic spectrum and were first demonstrated by Jérôme Faist, Federico Capasso, Deborah Sivco, Carlo Sirtori, Albert Hutchinson, and Alfred Cho at Bell Laboratories in 1994. Unlike typical interband semiconductor lasers that emit electromagnetic radiation through the recombination of electron–hole pairs across the material band gap, QCLs are unipolar, and laser emission is achieved through the use of intersubband transitions in a repeated stack of semiconductor multiple quantum well heterostructures, an idea first proposed in the article "Possibility of amplification of electromagnetic waves in a semiconductor with a superlattice" by R. F. Kazarinov and R. A. Suris in 1971. Intersubband vs. interband transitions Within a bulk semiconductor crystal, electrons may occupy states in one of two continuous energy bands — the valence band, which is heavily ...
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Gallium Nitride
Gallium nitride () is a binary III/ V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without requiring nonlinear optical frequency-doubling. Its sensitivity to ionizing radiation is low (like other group III nitrides), making it a suitable material for solar cell arrays for satellites. Military and space applications could also benefit as devices have shown stability in high radiation environments. Because GaN transistors can operate at much higher temperatures and work at much higher voltages than gallium arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies. In addition, GaN offers promising characteris ...
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