Piezotronics
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Piezotronics
Piezotronics effect is using the piezoelectric potential (piezopotential) created in materials with piezoelectricity as a “gate” voltage to tune/control the charge carrier transport properties for fabricating new devices. Neil A Downie showed how simple it was to build simple demonstrations on a macro-scale using a sandwich of piezoelectric material and carbon piezoresistive material to make an FET-like amplifying device and put it in a book of science projects for students in 2006. The fundamental principle of piezotronics was introduced by Prof. Zhong Lin Wang at Georgia Institute of Technology in 2007. A series of electronic devices have been demonstrated based on this effect, including piezopotential gated field-effect transistor, piezopotential gated diode, strain sensors, force/flow sensors, hybrid field-effect transistor, piezotronic logic gates, electromechanical memories, etc. Piezotronic devices are regarded as a new semiconductor-device category. Piezotronics is li ...
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Piezotronics2
Piezotronics effect is using the piezoelectric potential (piezopotential) created in materials with piezoelectricity as a “gate” voltage to tune/control the charge carrier transport properties for fabricating new devices. Neil A Downie showed how simple it was to build simple demonstrations on a macro-scale using a sandwich of piezoelectric material and carbon piezoresistive material to make an FET-like amplifying device and put it in a book of science projects for students in 2006. The fundamental principle of piezotronics was introduced by Prof. Zhong Lin Wang at Georgia Institute of Technology in 2007. A series of electronic devices have been demonstrated based on this effect, including piezopotential gated field-effect transistor, piezopotential gated diode, strain sensors, force/flow sensors, hybrid field-effect transistor, piezotronic logic gates, electromechanical memories, etc. Piezotronic devices are regarded as a new semiconductor-device category. Piezotronics is like ...
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Piezoelectricity
Piezoelectricity (, ) is the electric charge that accumulates in certain solid materials—such as crystals, certain ceramics, and biological matter such as bone, DNA, and various proteins—in response to applied mechanical stress. The word ''piezoelectricity'' means electricity resulting from pressure and latent heat. It is derived from the Greek word ; ''piezein'', which means to squeeze or press, and ''ēlektron'', which means amber, an ancient source of electric charge. The piezoelectric effect results from the linear electromechanical interaction between the mechanical and electrical states in crystalline materials with no inversion symmetry. The piezoelectric effect is a reversible process: materials exhibiting the piezoelectric effect also exhibit the reverse piezoelectric effect, the internal generation of a mechanical strain resulting from an applied electrical field. For example, lead zirconate titanate crystals will generate measurable piezoelectricity when their ...
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Piezoelectricity
Piezoelectricity (, ) is the electric charge that accumulates in certain solid materials—such as crystals, certain ceramics, and biological matter such as bone, DNA, and various proteins—in response to applied mechanical stress. The word ''piezoelectricity'' means electricity resulting from pressure and latent heat. It is derived from the Greek word ; ''piezein'', which means to squeeze or press, and ''ēlektron'', which means amber, an ancient source of electric charge. The piezoelectric effect results from the linear electromechanical interaction between the mechanical and electrical states in crystalline materials with no inversion symmetry. The piezoelectric effect is a reversible process: materials exhibiting the piezoelectric effect also exhibit the reverse piezoelectric effect, the internal generation of a mechanical strain resulting from an applied electrical field. For example, lead zirconate titanate crystals will generate measurable piezoelectricity when their ...
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Piezophototronics
Piezo-phototronic effect is a three-way coupling effect of piezoelectric, semiconductor and photonic properties in non-central symmetric semiconductor materials, using the piezoelectric potential (piezopotential) that is generated by applying a strain to a semiconductor with piezoelectricity to control the carrier generation, transport, separation and/or recombination at metal–semiconductor junction or p–n junction for improving the performance of optoelectronic devices, such as photodetector, solar cell and light-emitting diode. Prof. Zhong Lin Wang at Georgia Institute of Technology proposed the fundamental principle of this effect in 2010. Mechanism When a p-type semiconductor and a n-type semiconductor form a junction, the holes in the p-type side and the electrons in the n-type side tend to redistribute around the interface area to balance the local electric field, which results in a charge depletion layer. The diffusion and recombination of the electrons and holes in the ...
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Microtechnology
Microtechnology deals with technology whose features have dimensions of the order of one micrometre (one millionth of a metre, or 10−6 metre, or 1μm). It focuses on physical and chemical processes as well as the production or manipulation of structures with one-micrometre magnitude. Development Around 1970, scientists learned that by arraying large numbers of microscopic transistors on a single chip, microelectronic circuits could be built that dramatically improved performance, functionality, and reliability, all while reducing cost and increasing volume. This development led to the Information Revolution. More recently, scientists have learned that not only electrical devices, but also mechanical devices, may be miniaturized and batch-fabricated, promising the same benefits to the mechanical world as integrated circuit technology has given to the electrical world. While electronics now provide the ‘brains’ for today's advanced systems and products, micro-mechanical devic ...
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Wurtzite
Wurtzite is a zinc and iron sulfide mineral with the chemical formula , a less frequently encountered Polymorphism (materials science), structural polymorph form of sphalerite. The iron content is variable up to eight percent.Palache, Charles, Harry Berman & Clifford Frondel (1944), ''The System of Mineralogy of James Dwight Dana and Edward Salisbury Dana,'' Yale University 1837-1892, Volume I: Elements, Sulfides, Sulfosalts, Oxides. John Wiley and Sons, Inc., New York. 7th edition, revised and enlarged, pp. 226-228. It is trimorphous with matraite and sphalerite. It occurs in hydrothermal deposits associated with sphalerite, pyrite, chalcopyrite, barite and marcasite. It also occurs in low-temperature clay-ironstone concretions. It was first described in 1861 for an occurrence in the San José Mine, Oruro, Bolivia, Oruro City, Cercado Province (Oruro), Cercado Province, Oruro Department, Bolivia, and named for French chemist Charles-Adolphe Wurtz. It has widespread distribution. ...
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Non Linear Piezoelectric Effects In Polar Semiconductors
Non linear piezoelectric effects in polar semiconductors are the manifestation that the strain induced piezoelectric polarization depends not just on the product of the first order piezoelectric coefficients times the strain tensor components but also on the product of the second order (or higher) piezoelectric coefficients times products of the strain tensor components. The idea was put forward for zincblende GaAs and InAs semiconductors since 2006, and then extended to all commonly used wurtzite and zincblende semiconductors. Given the difficulty of finding direct experimental evidence for the existence of these effects, there are different schools of thought on how one can calculate reliably all the piezoelectric coefficients. On the other hand, there is widespread agreement on the fact that non linear effects are rather large and comparable to the linear terms (first order). Indirect experimental evidence of the existence of these effects has been reported in the literature in rel ...
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Optoelectronics
Optoelectronics (or optronics) is the study and application of electronic devices and systems that find, detect and control light, usually considered a sub-field of photonics. In this context, ''light'' often includes invisible forms of radiation such as gamma rays, X-rays, ultraviolet and infrared, in addition to visible light. Optoelectronic devices are electrical-to-optical or optical-to-electrical transducers, or instruments that use such devices in their operation. ''Electro-optics'' is often erroneously used as a synonym, but is a wider branch of physics that concerns all interactions between light and electric fields, whether or not they form part of an electronic device. Optoelectronics is based on the quantum mechanical effects of light on electronic materials, especially semiconductors, sometimes in the presence of electric fields. * Photoelectric or photovoltaic effect, used in: ** photodiodes (including solar cells) ** phototransistors ** photomultipliers ** optois ...
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Gate Voltage
The threshold voltage, commonly abbreviated as Vth or VGS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (VGS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency. When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead. This is somewhat confusing since ''pinch off'' applied to insulated-gate field-effect transistor (IGFET) refers to the channel pinching that leads to current saturation behaviour under high source–drain bias, even though the current is never off. Unlike ''pinch off'', the term ''threshold voltage'' is unambiguous and refers to the same concept in any field-effect transistor. Basic principles In n-channel ''enhancement-mode'' devices, a conductive channel does not exist naturally within the transistor, and a positive gate-to-source voltage is necessary to create one su ...
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Schottky Barrier
A Schottky barrier, named after Walter H. Schottky, is a potential energy barrier for electrons formed at a metal–semiconductor junction. Schottky barriers have rectifying characteristics, suitable for use as a diode. One of the primary characteristics of a Schottky barrier is the Schottky barrier height, denoted by ΦB (see figure). The value of ΦB depends on the combination of metal and semiconductor. Not all metal–semiconductor junctions form a rectifying Schottky barrier; a metal–semiconductor junction that conducts current in both directions without rectification, perhaps due to its Schottky barrier being too low, is called an ohmic contact. Physics of formation When a metal is put in direct contact with a semiconductor, a so called Schottky barrier can be formed, leading to a rectifying behavior of the electrical contact. This happens both when the semiconductor is n-type and its work function is smaller than the work function of the metal, and when the semic ...
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Electric Field
An electric field (sometimes E-field) is the physical field that surrounds electrically charged particles and exerts force on all other charged particles in the field, either attracting or repelling them. It also refers to the physical field for a system of charged particles. Electric fields originate from electric charges and time-varying electric currents. Electric fields and magnetic fields are both manifestations of the electromagnetic field, one of the four fundamental interactions (also called forces) of nature. Electric fields are important in many areas of physics, and are exploited in electrical technology. In atomic physics and chemistry, for instance, the electric field is the attractive force holding the atomic nucleus and electrons together in atoms. It is also the force responsible for chemical bonding between atoms that result in molecules. The electric field is defined as a vector field that associates to each point in space the electrostatic ( Coulomb) for ...
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