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Non Linear Piezoelectric Effects In Polar Semiconductors
Non linear piezoelectric effects in polar semiconductors are the manifestation that the strain induced piezoelectric polarization depends not just on the product of the first order piezoelectric coefficients times the strain tensor components but also on the product of the second order (or higher) piezoelectric coefficients times products of the strain tensor components. The idea was put forward for zincblende GaAs and InAs semiconductors since 2006, and then extended to all commonly used wurtzite and zincblende semiconductors. Given the difficulty of finding direct experimental evidence for the existence of these effects, there are different schools of thought on how one can calculate reliably all the piezoelectric coefficients. On the other hand, there is widespread agreement on the fact that non linear effects are rather large and comparable to the linear terms (first order). Indirect experimental evidence of the existence of these effects has been reported in the literature in rel ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Wurtzite
Wurtzite is a zinc and iron sulfide mineral with the chemical formula , a less frequently encountered Polymorphism (materials science), structural polymorph form of sphalerite. The iron content is variable up to eight percent.Palache, Charles, Harry Berman & Clifford Frondel (1944), ''The System of Mineralogy of James Dwight Dana and Edward Salisbury Dana,'' Yale University 1837-1892, Volume I: Elements, Sulfides, Sulfosalts, Oxides. John Wiley and Sons, Inc., New York. 7th edition, revised and enlarged, pp. 226-228. It is trimorphous with matraite and sphalerite. It occurs in hydrothermal deposits associated with sphalerite, pyrite, chalcopyrite, barite and marcasite. It also occurs in low-temperature clay-ironstone concretions. It was first described in 1861 for an occurrence in the San José Mine, Oruro, Bolivia, Oruro City, Cercado Province (Oruro), Cercado Province, Oruro Department, Bolivia, and named for French chemist Charles-Adolphe Wurtz. It has widespread distribution. ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Zincblende
Sphalerite (sometimes spelled sphaelerite) is a sulfide mineral with the chemical formula . It is the most important ore of zinc. Sphalerite is found in a variety of deposit types, but it is primarily in sedimentary exhalative, Mississippi-Valley type, and volcanogenic massive sulfide deposits. It is found in association with galena, chalcopyrite, pyrite (and other sulfides), calcite, dolomite, quartz, rhodochrosite, and fluorite. German geologist Ernst Friedrich Glocker discovered sphalerite in 1847, naming it based on the Greek word ''sphaleros'', meaning "deceiving", due to the difficulty of identifying the mineral. In addition to zinc, sphalerite is an ore of cadmium, gallium, germanium, and indium. Miners have been known to refer to sphalerite as ''zinc blende'', ''black-jack'', and ''ruby blende''. Marmatite is an opaque black variety with a high iron content. Crystal habit and structure Sphalerite crystallizes in the face-centered cubic zincblende crystal structur ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
GaAs
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. Preparation and chemistry In the compound, gallium has a +3 oxidation state. Gallium arsenide single crystals can be prepared by three industrial processes: * The vertical gradient freeze (VGF) process. * Crystal growth using a horizontal zone furnace in the Bridgman-Stockbarger technique, in which gallium and arsenic vapors react, and free molecules deposit on a seed crystal at the cooler end of the furnace. * Liquid encapsulated Czochralski (LEC) growth is used for producing high-puri ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
InAs
Indium arsenide, InAs, or indium monoarsenide, is a narrow-bandgap semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C. Indium arsenide is similar in properties to gallium arsenide and is a direct bandgap material, with a bandgap of 0.35 eV at room temperature. Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm. The detectors are usually photovoltaic photodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making of diode lasers. InAs is well known for its high electron mobility and narrow energy bandgap. It is widely used as terahertz radiation source as it is a strong photo-Dember emitter. The optoelectronic properties and phonon vibrations are slightly changed under the effect of temperature over the range form 0 K ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Wurtzite Crystal Structure
In crystallography, the hexagonal crystal family is one of the six crystal families, which includes two crystal systems (hexagonal and trigonal) and two lattice systems (hexagonal and rhombohedral). While commonly confused, the trigonal crystal system and the rhombohedral lattice system are not equivalent (see section crystal systems below). In particular, there are crystals that have trigonal symmetry but belong to the hexagonal lattice (such as α-quartz). The hexagonal crystal family consists of the 12 point groups such that at least one of their space groups has the hexagonal lattice as underlying lattice, and is the union of the hexagonal crystal system and the trigonal crystal system. There are 52 space groups associated with it, which are exactly those whose Bravais lattice is either hexagonal or rhombohedral. __TOC__ Lattice systems The hexagonal crystal family consists of two lattice systems: hexagonal and rhombohedral. Each lattice system consists of one Bravais la ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Piezoelectricity
Piezoelectricity (, ) is the electric charge that accumulates in certain solid materials—such as crystals, certain ceramics, and biological matter such as bone, DNA, and various proteins—in response to applied mechanical stress. The word ''piezoelectricity'' means electricity resulting from pressure and latent heat. It is derived from the Greek word ; ''piezein'', which means to squeeze or press, and ''ēlektron'', which means amber, an ancient source of electric charge. The piezoelectric effect results from the linear electromechanical interaction between the mechanical and electrical states in crystalline materials with no inversion symmetry. The piezoelectric effect is a reversible process: materials exhibiting the piezoelectric effect also exhibit the reverse piezoelectric effect, the internal generation of a mechanical strain resulting from an applied electrical field. For example, lead zirconate titanate crystals will generate measurable piezoelectricity when their ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Light-emitting Diode
A light-emitting diode (LED) is a semiconductor device that emits light when current flows through it. Electrons in the semiconductor recombine with electron holes, releasing energy in the form of photons. The color of the light (corresponding to the energy of the photons) is determined by the energy required for electrons to cross the band gap of the semiconductor. White light is obtained by using multiple semiconductors or a layer of light-emitting phosphor on the semiconductor device. Appearing as practical electronic components in 1962, the earliest LEDs emitted low-intensity infrared (IR) light. Infrared LEDs are used in remote-control circuits, such as those used with a wide variety of consumer electronics. The first visible-light LEDs were of low intensity and limited to red. Early LEDs were often used as indicator lamps, replacing small incandescent bulbs, and in seven-segment displays. Later developments produced LEDs available in visible, ultraviolet (UV) ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Piezotronics
Piezotronics effect is using the piezoelectric potential (piezopotential) created in materials with piezoelectricity as a “gate” voltage to tune/control the charge carrier transport properties for fabricating new devices. Neil A Downie showed how simple it was to build simple demonstrations on a macro-scale using a sandwich of piezoelectric material and carbon piezoresistive material to make an FET-like amplifying device and put it in a book of science projects for students in 2006. The fundamental principle of piezotronics was introduced by Prof. Zhong Lin Wang at Georgia Institute of Technology in 2007. A series of electronic devices have been demonstrated based on this effect, including piezopotential gated field-effect transistor, piezopotential gated diode, strain sensors, force/flow sensors, hybrid field-effect transistor, piezotronic logic gates, electromechanical memories, etc. Piezotronic devices are regarded as a new semiconductor-device category. Piezotronics is li ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Piezoelectricity
Piezoelectricity (, ) is the electric charge that accumulates in certain solid materials—such as crystals, certain ceramics, and biological matter such as bone, DNA, and various proteins—in response to applied mechanical stress. The word ''piezoelectricity'' means electricity resulting from pressure and latent heat. It is derived from the Greek word ; ''piezein'', which means to squeeze or press, and ''ēlektron'', which means amber, an ancient source of electric charge. The piezoelectric effect results from the linear electromechanical interaction between the mechanical and electrical states in crystalline materials with no inversion symmetry. The piezoelectric effect is a reversible process: materials exhibiting the piezoelectric effect also exhibit the reverse piezoelectric effect, the internal generation of a mechanical strain resulting from an applied electrical field. For example, lead zirconate titanate crystals will generate measurable piezoelectricity when their ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Light-emitting Diode
A light-emitting diode (LED) is a semiconductor device that emits light when current flows through it. Electrons in the semiconductor recombine with electron holes, releasing energy in the form of photons. The color of the light (corresponding to the energy of the photons) is determined by the energy required for electrons to cross the band gap of the semiconductor. White light is obtained by using multiple semiconductors or a layer of light-emitting phosphor on the semiconductor device. Appearing as practical electronic components in 1962, the earliest LEDs emitted low-intensity infrared (IR) light. Infrared LEDs are used in remote-control circuits, such as those used with a wide variety of consumer electronics. The first visible-light LEDs were of low intensity and limited to red. Early LEDs were often used as indicator lamps, replacing small incandescent bulbs, and in seven-segment displays. Later developments produced LEDs available in visible, ultraviolet (UV) ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Nanoelectronics
Nanoelectronics refers to the use of nanotechnology in electronic components. The term covers a diverse set of devices and materials, with the common characteristic that they are so small that inter-atomic interactions and quantum mechanical properties need to be studied extensively. Some of these candidates include: hybrid molecular/semiconductor electronics, one-dimensional nanotubes/nanowires (e.g. silicon nanowires or carbon nanotubes) or advanced molecular electronics. Nanoelectronic devices have critical dimensions with a size range between 1 nm and 100 nm. Recent silicon MOSFET (metal-oxide-semiconductor field-effect transistor, or MOS transistor) technology generations are already within this regime, including 22 nanometers CMOS (complementary MOS) nodes and succeeding 14 nm, 10 nm and 7 nm FinFET (fin field-effect transistor) generations. Nanoelectronics is sometimes considered as disruptive technology because present candidates are significantly different f ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
