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Monolithic Microwave Integrated Circuit
Monolithic microwave integrated circuit, or MMIC (sometimes pronounced "mimic"), is a type of integrated circuit (IC) device that operates at microwave frequencies (300 MHz to 300 GHz). These devices typically perform functions such as microwave mixing, power amplification, low-noise amplification, and high-frequency switching. Inputs and outputs on MMIC devices are frequently matched to a characteristic impedance of 50 ohms. This makes them easier to use, as cascading of MMICs does not then require an external matching network. Additionally, most microwave test equipment is designed to operate in a 50-ohm environment. MMICs are dimensionally small (from around 1 mm² to 10 mm²) and can be mass-produced, which has allowed the proliferation of high-frequency devices such as cellular phones. MMICs were originally fabricated using gallium arsenide (GaAs), a III-V compound semiconductor. It has two fundamental advantages over silicon (Si), the traditional mater ...
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MMIC Example
Monolithic microwave integrated circuit, or MMIC (sometimes pronounced "mimic"), is a type of integrated circuit (IC) device that operates at microwave frequencies (300 MHz to 300 GHz). These devices typically perform functions such as microwave mixing, power amplification, low-noise amplification, and high-frequency switching. Inputs and outputs on MMIC devices are frequently matched to a characteristic impedance of 50 ohms. This makes them easier to use, as cascading of MMICs does not then require an external matching network. Additionally, most microwave test equipment is designed to operate in a 50-ohm environment. MMICs are dimensionally small (from around 1 mm² to 10 mm²) and can be mass-produced, which has allowed the proliferation of high-frequency devices such as cellular phones. MMICs were originally fabricated using gallium arsenide (GaAs), a III-V compound semiconductor. It has two fundamental advantages over silicon (Si), the traditional materi ...
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Transistor
upright=1.4, gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (pink). A transistor is a semiconductor device used to Electronic amplifier, amplify or electronic switch, switch electrical signals and electrical power, power. The transistor is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more are found embedded in integrated circuits. Austro-Hungarian physicist Julius Edgar Lilienfeld proposed the concept of a field-effect transistor in 1926, but it was not possible to actually constru ...
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Transmission Line
In electrical engineering, a transmission line is a specialized cable or other structure designed to conduct electromagnetic waves in a contained manner. The term applies when the conductors are long enough that the wave nature of the transmission must be taken into account. This applies especially to radio-frequency engineering because the short wavelengths mean that wave phenomena arise over very short distances (this can be as short as millimetres depending on frequency). However, the theory of transmission lines was historically developed to explain phenomena on very long telegraph lines, especially submarine telegraph cables. Transmission lines are used for purposes such as connecting radio transmitters and receivers with their antennas (they are then called feed lines or feeders), distributing cable television signals, trunklines routing calls between telephone switching centres, computer network connections and high speed computer data buses. RF engineers commonly ...
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Hybrid Integrated Circuit
A hybrid integrated circuit (HIC), hybrid microcircuit, hybrid circuit or simply hybrid is a miniaturized electronic circuit constructed of individual devices, such as semiconductor devices (e.g. transistors, diodes or monolithic ICs) and passive components (e.g. resistors, inductors, transformers, and capacitors), bonded to a substrate or printed circuit board (PCB). A PCB having components on a Printed Wiring Board (PWB) is not considered a true hybrid circuit according to the definition of MIL-PRF-38534. Overview "Integrated circuit" as the term is currently used refers to a monolithic IC which differs notably from a HIC in that a HIC is fabricated by inter-connecting a number of components on a substrate whereas an IC's (monolithic) components are fabricated in a series of steps entirely on a single wafer which is then diced into chips. Some hybrid circuits may contain monolithic ICs, particularly Multi-chip module (MCM) hybrid circuits. Hybrid circuits could be enc ...
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Indium Phosphide
Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors. Manufacturing Indium phosphide can be prepared from the reaction of white phosphorus and indium iodide at 400 °C., also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium compound and phosphine. Uses InP is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. It was used with indium gallium arsenide to make a record breaking pseudomorphic heterojunction bipolar transistor that could operate at 604 GHz. It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes. The company Infinera uses indium phosphide as its major techn ...
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Heterojunction Bipolar Transistor
The heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) which uses differing semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it can handle signals of very high frequencies, up to several hundred GHz. It is commonly used in modern ultrafast circuits, mostly radio frequency (RF) systems, and in applications requiring a high power efficiency, such as RF power amplifiers in cellular phones. The idea of employing a heterojunction is as old as the conventional BJT, dating back to a patent from 1951. Detailed theory of heterojunction bipolar transistor was developed by Herbert Kroemer in 1957. Materials The principal difference between the BJT and HBT is in the use of differing semiconductor materials for the emitter-base junction and the base-collector junction, creating a heterojunction. The effect is to limit the injection of holes from the base into the emitter region, since t ...
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High-electron-mobility Transistor
A high-electron-mobility transistor (HEMT), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for a MOSFET). A commonly used material combination is GaAs with AlGaAs, though there is wide variation, dependent on the application of the device. Devices incorporating more indium generally show better high-frequency performance, while in recent years, gallium nitride HEMTs have attracted attention due to their high-power performance. Like other FETs, HEMTs are used in integrated circuits as digital on-off switches. FETs can also be used as amplifiers for large amounts of current using a small voltage as a control signal. Both of these uses are made possible by the FET’s unique current–voltage characteristics. HEMT transistors are able to operate at higher frequenc ...
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MESFET
A MESFET (metal–semiconductor field-effect transistor) is a field-effect transistor semiconductor device similar to a JFET with a Schottky (metal–semiconductor) junction instead of a p–n junction for a gate. Construction MESFETs are constructed in compound semiconductor technologies lacking high quality surface passivation, such as gallium arsenide, indium phosphide, or silicon carbide, and are faster but more expensive than silicon-based JFETs or MOSFETs. Production MESFETs are operated up to approximately 45 GHz, and are commonly used for microwave frequency communications and radar. The first MESFETs were developed in 1966, and a year later their extremely high frequency RF microwave performance was demonstrated.GaAs FET MESFET
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Wafer (electronics)
In electronics, a wafer (also called a slice or substrate) is a thin slice of semiconductor, such as a crystalline silicon Crystalline silicon or (c-Si) Is the crystalline forms of silicon, either polycrystalline silicon (poly-Si, consisting of small crystals), or monocrystalline silicon (mono-Si, a continuous crystal). Crystalline silicon is the dominant semiconduc ... (c-Si), used for the fabrication of integrated circuits and, in photovoltaics, to manufacture solar cells. The wafer serves as the substrate (materials science), substrate for microelectronic devices built in and upon the wafer. It undergoes many microfabrication processes, such as doping (semiconductor), doping, ion implantation, Etching (microfabrication), etching, thin-film deposition of various materials, and Photolithography, photolithographic patterning. Finally, the individual microcircuits are separated by wafer dicing and Integrated circuit packaging, packaged as an integrated circuit. History I ...
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Silicon
Silicon is a chemical element with the symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic luster, and is a tetravalent metalloid and semiconductor. It is a member of group 14 in the periodic table: carbon is above it; and germanium, tin, lead, and flerovium are below it. It is relatively unreactive. Because of its high chemical affinity for oxygen, it was not until 1823 that Jöns Jakob Berzelius was first able to prepare it and characterize it in pure form. Its oxides form a family of anions known as silicates. Its melting and boiling points of 1414 °C and 3265 °C, respectively, are the second highest among all the metalloids and nonmetals, being surpassed only by boron. Silicon is the eighth most common element in the universe by mass, but very rarely occurs as the pure element in the Earth's crust. It is widely distributed in space in cosmic dusts, planetoids, and planets as various forms of silicon dioxide ( ...
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Monolithic Microwave Integrated Circuit MSA0686 Fixed
A monolith is a monument or natural feature consisting of a single massive stone or rock. Monolith or monolithic may also refer to: Architecture * Monolithic architecture, a style of construction in which a building is carved, cast or excavated from a single piece of material * Monolithic column, column made from one single piece of stone * Monolithic dome, structure cast in one piece over a form, made of concrete or similar structural material Arts and entertainment Art * ''Monolitten'', Norwegian for ''The Monolith'', a sculpture in Vigeland Sculpture Park in Norway * Utah monolith, a metal pillar sculpture in the desert in Utah, U.S. * '' Monolith, the Face of Half Dome'', a photograph by Ansel Adams Characters and entities * Monolith, character from the '' Elementals'' comic book series * Monolith (''Space Odyssey''), the Monoliths featured in ''2001: A Space Odyssey'' and its sequels * The Monolith, a faction from the video games '' S.T.A.L.K.E.R.: Shadow of Chernobyl'' an ...
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