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Erasable Programmable Read-only Memory
An EPROM (rarely EROM), or erasable programmable read-only memory, is a type of programmable read-only memory (PROM) chip that retains its data when its power supply is switched off. Computer memory that can retrieve stored data after a power supply has been turned off and back on is called non-volatile. It is an array of floating-gate transistors individually programmed by an electronic device that supplies higher voltages than those normally used in digital circuits. Once programmed, an EPROM can be erased by exposing it to strong ultraviolet light source (such as from a mercury-vapor lamp A mercury-vapor lamp is a gas-discharge lamp that uses an electric arc through vaporized mercury to produce light. The arc discharge is generally confined to a small fused quartz arc tube mounted within a larger soda lime or borosilicate glass ...). EPROMs are easily recognizable by the transparent fused quartz (or on later models resin) window on the top of the package, through which ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gate Oxide
The gate oxide is the dielectric layer that separates the gate terminal of a MOSFET (metal-oxide-semiconductor field-effect transistor) from the underlying source and drain terminals as well as the conductive channel that connects source and drain when the transistor is turned on. Gate oxide is formed by thermal oxidation of the silicon of the channel to form a thin (5 - 200 nm) insulating layer of silicon dioxide. The insulating silicon dioxide layer is formed through a process of self-limiting oxidation, which is described by the Deal–Grove model. A conductive gate material is subsequently deposited over the gate oxide to form the transistor. The gate oxide serves as the dielectric layer so that the gate can sustain as high as 1 to 5 MV/cm transverse electric field in order to strongly modulate the conductance of the channel. Above the gate oxide is a thin electrode layer made of a conductor which can be aluminium, a highly doped silicon, a refractory metal such as tungste ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
EEPROM
EEPROM (also called E2PROM) stands for electrically erasable programmable read-only memory and is a type of non-volatile memory used in computers, usually integrated in microcontrollers such as smart cards and remote keyless systems, or as a separate chip device to store relatively small amounts of data by allowing individual bytes to be erased and reprogrammed. EEPROMs are organized as arrays of floating-gate transistors. EEPROMs can be programmed and erased in-circuit, by applying special programming signals. Originally, EEPROMs were limited to single-byte operations, which made them slower, but modern EEPROMs allow multi-byte page operations. An EEPROM has a limited life for erasing and reprogramming, now reaching a million operations in modern EEPROMs. In an EEPROM that is frequently reprogrammed, the life of the EEPROM is an important design consideration. Flash memory is a type of EEPROM designed for high speed and high density, at the expense of large erase blocks (ty ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Fluorescent Lamp
A fluorescent lamp, or fluorescent tube, is a low-pressure mercury-vapor gas-discharge lamp that uses fluorescence to produce visible light. An electric current in the gas excites mercury vapor, which produces short-wave ultraviolet light that then causes a phosphor coating on the inside of the lamp to glow. A fluorescent lamp converts electrical energy into useful light much more efficiently than an incandescent lamp. The typical luminous efficacy of fluorescent lighting systems is 50–100 lumens per watt, several times the efficacy of incandescent bulbs with comparable light output. For comparison, the luminous efficacy of an incandescent bulb may only be 16 lumens per watt. Fluorescent lamp fixtures are more costly than incandescent lamps because, among other things, they require a ballast to regulate current through the lamp, but the initial cost is offset by a much lower running cost. Compact fluorescent lamps are now available in the same popular sizes as incand ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Die (integrated Circuit)
A die, in the context of integrated circuits, is a small block of semiconducting material on which a given functional circuit is fabricated. Typically, integrated circuits are produced in large batches on a single wafer of electronic-grade silicon (EGS) or other semiconductor (such as GaAs) through processes such as photolithography. The wafer is cut (diced) into many pieces, each containing one copy of the circuit. Each of these pieces is called a die. There are three commonly used plural forms: ''dice'', ''dies'' and ''die''. To simplify handling and integration onto a printed circuit board, most dies are packaged in various forms. Manufacturing process Most dies are composed of silicon and used for integrated circuits. The process begins with the production of monocrystalline silicon ingots. These ingots are then sliced into disks with a diameter of up to 300 mm. [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Floating Gate Transistor
The floating-gate MOSFET (FGMOS), also known as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate is electrically isolated, creating a floating node in direct current, and a number of secondary gates or inputs are deposited above the floating gate (FG) and are electrically isolated from it. These inputs are only capacitively connected to the FG. Since the FG is surrounded by highly resistive material, the charge contained in it remains unchanged for long periods of time, nowadays typically longer than 10 years. Usually Fowler-Nordheim tunneling and hot-carrier injection mechanisms are used to modify the amount of charge stored in the FG. The FGMOS is commonly used as a floating-gate memory cell, the digital storage element in EPROM, EEPROM and flash memory technologies. Other uses of the FGMOS include a neuronal computational element in neural networks, analog storage element ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Floating-gate
The floating-gate MOSFET (FGMOS), also known as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate is electrically isolated, creating a floating node in direct current, and a number of secondary gates or inputs are deposited above the floating gate (FG) and are electrically isolated from it. These inputs are only capacitively connected to the FG. Since the FG is surrounded by highly resistive material, the charge contained in it remains unchanged for long periods of time, nowadays typically longer than 10 years. Usually Fowler-Nordheim tunneling and hot-carrier injection mechanisms are used to modify the amount of charge stored in the FG. The FGMOS is commonly used as a floating-gate memory cell, the digital storage element in EPROM, EEPROM and flash memory technologies. Other uses of the FGMOS include a neuronal computational element in neural networks, analog storage element, di ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Field-effect Transistor
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: ''source'', ''gate'', and ''drain''. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use either electrons (n-channel) or holes (p-channel) as charge carriers in their operation, but not both. Many different types of field effect transistors exist. Field effect transistors generally display very high input impedance at low frequencies. The most widely used field-effect transistor is the MOSFET (metal-oxide-semiconductor field-effect transistor). History The concept of a field-effect transistor (FET) was first patented by Austro-Hungarian physicist Julius Edgar Lilienfeld in 192 ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Intel
Intel Corporation is an American multinational corporation and technology company headquartered in Santa Clara, California. It is the world's largest semiconductor chip manufacturer by revenue, and is one of the developers of the x86 series of instruction sets, the instruction sets found in most personal computers (PCs). Incorporated in Delaware, Intel ranked No. 45 in the 2020 ''Fortune'' 500 list of the largest United States corporations by total revenue for nearly a decade, from 2007 to 2016 fiscal years. Intel supplies microprocessors for computer system manufacturers such as Acer, Lenovo, HP, and Dell. Intel also manufactures motherboard chipsets, network interface controllers and integrated circuits, flash memory, graphics chips, embedded processors and other devices related to communications and computing. Intel (''int''egrated and ''el''ectronics) was founded on July 18, 1968, by semiconductor pioneers Gordon Moore (of Moore's law) and Robert Noyce ( ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Dov Frohman
Dov Frohman (Hebrew: דב פרוהמן, also Dov Frohman-Bentchkowsky; born March 28, 1939) is an Israeli electrical engineer and business executive. A former vice president of Intel Corporation, he is the inventor of the erasable programmable read only memory (EPROM) and the founder and first general manager of Intel Israel. He is also the author (with Robert Howard) of ''Leadership the Hard Way'' (Jossey-Bass, 2008). Biography Dov Frohman was born in March 1939 in Amsterdam, five months before the start of World War II. His parents were Abraham and Feijga Frohman, Polish Jews who had emigrated to the Netherlands in the early 1930s to escape rising anti-Semitism in Poland. In 1942, after the German invasion of the Low Countries and as the Nazi grip on Holland’s Jewish community tightened, his parents decided to give their child to acquaintances in the Dutch resistance who placed him with the Van Tilborghs, an orthodox Christian farming family that lived in the village of Sp ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Read-only Memory
Read-only memory (ROM) is a type of non-volatile memory used in computers and other electronic devices. Data stored in ROM cannot be electronically modified after the manufacture of the memory device. Read-only memory is useful for storing software that is rarely changed during the life of the system, also known as firmware. Software applications (like video games) for programmable devices can be distributed as plug-in cartridges containing ROM. Strictly speaking, ''read-only memory'' refers to memory that is hard-wired, such as diode matrix or a mask ROM integrated circuit (IC), which cannot be electronically changed after manufacture. Although discrete circuits can be altered in principle, through the addition of bodge wires and/or the removal or replacement of components, ICs cannot. Correction of errors, or updates to the software, require new devices to be manufactured and to replace the installed device. Floating-gate ROM semiconductor memory in the form of erasab ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Floating Gate MOSFET
The floating-gate MOSFET (FGMOS), also known as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate is electrically isolated, creating a floating node in direct current, and a number of secondary gates or inputs are deposited above the floating gate (FG) and are electrically isolated from it. These inputs are only capacitively connected to the FG. Since the FG is surrounded by highly resistive material, the charge contained in it remains unchanged for long periods of time, nowadays typically longer than 10 years. Usually Fowler-Nordheim tunneling and hot-carrier injection mechanisms are used to modify the amount of charge stored in the FG. The FGMOS is commonly used as a floating-gate memory cell, the digital storage element in EPROM, EEPROM and flash memory technologies. Other uses of the FGMOS include a neuronal computational element in neural networks, analog storage element, di ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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