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ZMDI
Zentrum Mikroelektronik Dresden (ZMD) was regarded as the heart of East Germany's microelectronics research in the 1980s as well as its most advanced integrated circuit manufacturer. Together with TU Dresden and VEB Spurenmetalle Freiberg, ZMD formed the foundation for Silicon Saxony, a cluster of microelectronics companies that came to include new fabs by Siemens (later Infineon Technologies) and AMD (later GlobalFoundries). 1961: Arbeitsstelle für Molekularelektronik (AME) The company was founded in 1961 in Dresden under the leadership of Werner Hartmann as a research institute with the goal of developing technologies for manufacturing integrated circuits, following the seminal patents by Jack Kilby and Robert Noyce two years earlier. Initially, it was named ''Arbeitsstelle für Molekularelektronik'' (Department of Molecular Electronics) and reported to the government's Office of Nuclear Research and Technology. In 1965 the institute was moved to the combine ''VVB Bauele ...
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Kombinat Mikroelektronik Erfurt
VEB Kombinat Mikroelektronik Erfurt was an important manufacturer of active electronic components in East Germany. It should not be confused with the more well-known VEB Kombinat Robotron Dresden which used integrated circuits from Kombinat Mikroelektronik in its computers. Their products often carried the trademark RFT, but this was used on most electronic products from East Germany from otherwise unrelated companies. History The Kombinat Mikroelektronik Erfurt was formed in 1978 when the ''VVB Bauelemente und Vakuumtechnik'' was split into ''VEB Kombinat Elektronische Bauelemente Teltow'' for passive electronic components and ''VEB Kombinat Mikroelektronik Erfurt'' for active electronic components. However, the history of many of the individual plants reaches back further, in some cases to before the Second World War. In 1971 the first integrated circuits had been manufactured — the D100C (TTL) by Halbleiterwerk Frankfurt (Oder) and the U101D (PMOS logic) by Funkwerk Er ...
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Werner Hartmann (physicist)
Werner Hartmann (30 January 1912 – 8 March 1988) was a German physicist who introduced microelectronics into East Germany. He studied physics at the ''Technische Hochschule Berlin'' and worked at Siemens before joining '' Fernseh GmbH''. At the end of World War II, he and his research staff were flown to the Soviet Union to work on their atomic bomb project; he was assigned to Institute G. In 1955, he arrived in the German Democratic Republic (GDR); in the same year, he founded and became the director of the ''VEB Vakutronik Dresden'', later ''VEB RFT Meßelektronik Dresden''. In 1956, he completed his Habilitation at the Technische Hochschule Dresden and also became a professor for ''Kernphysikalische Elektronik'' there. In 1961, he founded the ''Arbeitsstelle für Molekularelektronik Dresden (AME)''. He was awarded the National Prize of GDR in 1958. In 1974, he was removed from his positions, significantly demoted, and sent to work as a staff scientist at the ''VEB Spurenm ...
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Integrated Device Technology
Integrated Device Technology, Inc., is an American corporation headquartered in San Jose, California, that designs, manufactures, and markets low-power, high-performance mixed-signal semiconductor solutions for the advanced communications, computing, and consumer industries. The company markets its products primarily to original equipment manufacturers (OEMs). Founded in 1980, the company began as a provider of complementary metal-oxide semiconductors (CMOS) for the communications business segment and computing business segments. The company is focused on three major areas: communications infrastructure (wireless and wired), high-performance computing, and advanced power management. Business segments The communications segment offers communication clocks, serial RapidIO solutions for wireless base station infrastructure applications, radio frequency products, digital logic products, first-in and first-out (FIFO) memories, integrated communications processors, static random-acc ...
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Dresden
Dresden (, ; Upper Saxon: ''Dräsdn''; wen, label=Upper Sorbian, Drježdźany) is the capital city of the German state of Saxony and its second most populous city, after Leipzig. It is the 12th most populous city of Germany, the fourth largest by area (after Berlin, Hamburg and Cologne), and the third most populous city in the area of former East Germany, after Berlin and Leipzig. Dresden's urban area comprises the towns of Freital, Pirna, Radebeul, Meissen, Coswig, Radeberg and Heidenau and has around 790,000 inhabitants. The Dresden metropolitan area has approximately 1.34 million inhabitants. Dresden is the second largest city on the River Elbe after Hamburg. Most of the city's population lives in the Elbe Valley, but a large, albeit very sparsely populated area of the city east of the Elbe lies in the West Lusatian Hill Country and Uplands (the westernmost part of the Sudetes) and thus in Lusatia. Many boroughs west of the Elbe lie in the foreland of the Ore Mounta ...
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Silicon Saxony
Silicon Saxony is a registered industry association of nearly 300 companies in the microelectronics and related sectors in Saxony, Germany, with around 40,000 employees. Many, but not all, of those firms are situated in the north of Dresden. With a name chosen referring to Silicon Valley, the area and the union — in many aspects — represent the only meaningful European center of microelectronics. Many of those firms have very research and capital intensive business models competing with subsidized global players, mainly from Asia. Industrial fields The companies develop and produce computer calculation and memory chips or new materials and electronics for solar companies. The developed and produced small semiconductors chips are used in all kinds of cars, mobile phones, TV sets and so on. History Even before Germany's reunification, Dresden was a major center of microelectronics in the Eastern bloc with 3,500 employees. While mechanical engineering, which has a long history ...
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Volkseigener Betrieb
The Publicly Owned Enterprise (german: Volkseigener Betrieb; abbreviated VEB) was the main legal form of industrial enterprise in East Germany. They were all publicly owned and were formed after Nationalisation#Germany, mass nationalisation between 1945 and the early 1960s, and the handing back in 1954 of some 33 enterprises previously taken by the Soviet Union as War reparations, reparations. The managing director of a VEB was called a plant or works manager (German: ''Werkleiter'', ''Werkdirektor'' or ''Betriebsdirektor''). He or she was assisted by the first secretary of the factory party organisation (''Betriebsparteiorganisation'') of the Socialist Unity Party of Germany, SED, and the chairman of the factory trade union (''Betriebsgewerkschaftsleitung''). Subordinate to them were roles such as "Chief Accountant" and "Technical Director". VEBs were initially vertical integration, vertically integrated into units called Associations of Publicly Owned Enterprises (''Vereinigung V ...
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7400 Series
The 7400 series of integrated circuits (ICs) are a popular logic family of transistor–transistor logic (TTL) logic chips. In 1964, Texas Instruments introduced the SN5400 series of logic chips, in a ceramic semiconductor package. A low-cost plastic package SN7400 series was introduced in 1966 which quickly gained over 50% of the logic chip market, and eventually becoming ''de facto'' standardized electronic components. Over the decades, many generations of pin-compatible descendant families evolved to include support for low power CMOS technology, lower supply voltages, and surface mount packages. Overview The 7400 series contains hundreds of devices that provide everything from basic logic gates, flip-flops, and counters, to special purpose bus transceivers and arithmetic logic units (ALU). Specific functions are described in a list of 7400 series integrated circuits. Some TTL logic parts were made with an extended military-specification temperature range. These pa ...
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P–n Junction
A p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor. The "p" (positive) side contains an excess of holes, while the "n" (negative) side contains an excess of electrons in the outer shells of the electrically neutral atoms there. This allows electrical current to pass through the junction only in one direction. The p-n junction is created by doping, for example by ion implantation, diffusion of dopants, or by epitaxy (growing a layer of crystal doped with one type of dopant on top of a layer of crystal doped with another type of dopant). If two separate pieces of material were used, this would introduce a grain boundary between the semiconductors that would severely inhibit its utility by scattering the electrons and holes. p–n junctions are elementary "building blocks" of semiconductor electronic devices such as diodes, transistors, solar cells, light-emitting diodes (LEDs) ...
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Bipolar Junction Transistor
A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor, uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current flowing between the terminals, making the device capable of amplification or switching. BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material. The junctions can be made in several different ways, such as changing the doping of the semiconductor material as it is grown, by depositing metal pellets to form alloy junctions, or by such methods as diffusion of n-type and p-type doping substances into the crystal. The superior predictability and performance of junction transistors quickly displaced the original point-contact transistor. Diffused transistors, along wi ...
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NAND Gate
In digital electronics, a NAND gate (NOT-AND) is a logic gate which produces an output which is false only if all its inputs are true; thus its output is complement to that of an AND gate. A LOW (0) output results only if all the inputs to the gate are HIGH (1); if any input is LOW (0), a HIGH (1) output results. A NAND gate is made using transistors and junction diodes. By De Morgan's laws, a two-input NAND gate's logic may be expressed as =+, making a NAND gate equivalent to inverters followed by an OR gate. The NAND gate is significant because any boolean function can be implemented by using a combination of NAND gates. This property is called functional completeness. It shares this property with the NOR gate. Digital systems employing certain logic circuits take advantage of NAND's functional completeness. The function is logically equivalent to One way of expressing A NAND B is \overline, where the symbol signifies AND and the bar signifies the negation of the express ...
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Halbleiterwerk Frankfurt (Oder)
VEB Halbleiterwerk Frankfurt (Oder) (abbreviated HFO or HWF) was the largest manufacturer of semiconductor devices in the German Democratic Republic. In 1989, HFO produced 110 million integrated circuits (70% of all integrated circuits produced in the GDR in that year), 9.7 million transistors, and 150 million transistor chips. Despite this, HFO did not rise to prominence like Zentrum Mikroelektronik Dresden (of '' megabit chip'' fame) or VEB Mikroelektronik "Karl Marx" Erfurt (known for its microprocessors). Also unlike Zentrum Mikroelektronik Dresden and VEB Mikroelektronik "Karl Marx" Erfurt, HFO did not survive long after German Reunification. History In January 1958, the production of Germanium diodes started in the building of a former vocational school. Halbleiterwerk Frankfurt (Oder) was officially founded on 1 January 1959. In January 1961 new production facilities for germanium alloy-junction transistors and diodes went into operation in the Markendorf quarter of Fran ...
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10 µm Process
The 10  μm process is the level of MOSFET semiconductor process technology that was commercially reached around 1971, by leading semiconductor companies such as RCA and Intel. Products featuring 10 μm manufacturing process * RCA's CD4000 series of integrated circuits began with a 20μm process in 1968, before gradually downscaling and eventually reaching 10μm in the next several years. * Intel 1103, an early dynamic random-access memory (DRAM) chip launched in 1970, used an 8μm process. * Intel 4004 CPU launched in 1971 was manufactured using a 10μm process. * Intel 8008 The Intel 8008 ("''eight-thousand-eight''" or "''eighty-oh-eight''") is an early byte-oriented microprocessor designed by Computer Terminal Corporation (CTC), implemented and manufactured by Intel, and introduced in April 1972. It is an 8-bit C ... CPU launched in 1972 was manufactured using this process. References External linksBrief timeline of microprocessor development *10000 197 ...
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