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Two-photon Photovoltaic Effect
Two-photon photovoltaic effect (TPP effect) is an energy collection method based on two-photon absorption (TPA). The TPP effect can be thought of as the nonlinear equivalent of the traditional photovoltaic effect involving high optical intensities. This effect occurs when two photons are absorbed at the same time resulting in an electron-hole pair. Background TPA is typically several orders of magnitude weaker than linear absorption at low light intensities. It differs from linear absorption in that the optical transition rate due to TPA depends on the square of the light intensity, thus it is a nonlinear optical process and can dominate over linear absorption at high intensities. Therefore, the power dissipation from the TPA and the resulting free carrier scattering are harmful problems in semiconductor devices which operate based on the nonlinear optical interactions such as the Kerr and Raman effects, when dealing with high intensities. The TPP effect is studied as a possible ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Two-photon Absorption
Two-photon absorption (TPA or 2PA) or two-photon excitation or non-linear absorption is the simultaneous absorption of two photons of identical or different frequencies in order to excite a molecule from one state (usually the ground state) to a higher energy, most commonly an excited electronic state. Absorption of two photons with different frequencies is called non-degenerate two-photon absorption. Since TPA depends on the simultaneous absorption of two photons, the probability of TPA is proportional to the square of the light intensity, thus it is a nonlinear optical process. The energy difference between the involved lower and upper states of the molecule is equal or smaller than the sum of the photon energies of the two photons absorbed. Two-photon absorption is a third-order process, with absorption cross section typically several orders of magnitude smaller than one-photon absorption cross section. Two-photon excitation of a fluorophore (a fluorescent molecule) leads to ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Shockley Diode Equation
The ''Shockley diode equation'' or the ''diode law'', named after transistor co-inventor William Shockley of Bell Telephone Laboratories, gives the I–V (current-voltage) characteristic of an idealized diode in either forward or reverse bias (applied voltage): :I=I_\mathrm \left( e^\frac - 1 \right) where :''I'' is the diode current, :''I''S is the reverse bias saturation current (or scale current), :''V''D is the voltage across the diode, :''V''T is the thermal voltage ''kT''/''q'' (Boltzmann constant times temperature divided by electron charge), and :''n'' is the ''ideality factor'', also known as the ''quality factor'' or sometimes ''emission coefficient''. The equation is called the ''Shockley ideal diode equation'' when ''n'', the ideality factor, is set equal to 1. The ideality factor ''n'' typically varies from 1 to 2 (though can in some cases be higher), depending on the fabrication process and semiconductor material and is set equal to 1 for the case of an "ideal" ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gallium Arsenide
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. Preparation and chemistry In the compound, gallium has a +3 oxidation state. Gallium arsenide single crystals can be prepared by three industrial processes: * The vertical gradient freeze (VGF) process. * Crystal growth using a horizontal zone furnace in the Bridgman-Stockbarger technique, in which gallium and arsenic vapors react, and free molecules deposit on a seed crystal at the cooler end of the furnace. * Liquid encapsulated Czochralski (LEC) growth is used for prod ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Wafer (electronics)
In electronics, a wafer (also called a slice or substrate) is a thin slice of semiconductor, such as a crystalline silicon (c-Si), used for the fabrication of integrated circuits and, in photovoltaics, to manufacture solar cells. The wafer serves as the substrate for microelectronic devices built in and upon the wafer. It undergoes many microfabrication processes, such as doping, ion implantation, etching, thin-film deposition of various materials, and photolithographic patterning. Finally, the individual microcircuits are separated by wafer dicing and packaged as an integrated circuit. History In the semiconductor or silicon wafer industry, the term wafer appeared in the 1950s to describe a thin round slice of semiconductor material, typically germanium or silicon. Round shape comes from single-crystal ingots usually produced using the Czochralski method. Silicon wafers were first introduced in the 1940s. By 1960, silicon wafers were being manufactured in the U.S. by c ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Silicon Photonics
Silicon photonics is the study and application of photonic systems which use silicon as an optical medium. The silicon is usually patterned with sub-micrometre precision, into microphotonic components. These operate in the infrared, most commonly at the 1.55 micrometre wavelength used by most fiber optic telecommunication systems. The silicon typically lies on top of a layer of silica in what (by analogy with a similar construction in microelectronics) is known as silicon on insulator (SOI). Silicon photonic devices can be made using existing semiconductor fabrication techniques, and because silicon is already used as the substrate for most integrated circuits, it is possible to create hybrid devices in which the optical and electronic components are integrated onto a single microchip. Consequently, silicon photonics is being actively researched by many electronics manufacturers including IBM and Intel, as well as by academic research groups, as a means for keeping on tr ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Quantum Dot
Quantum dots (QDs) are semiconductor particles a few nanometres in size, having optical and electronic properties that differ from those of larger particles as a result of quantum mechanics. They are a central topic in nanotechnology. When the quantum dots are illuminated by UV light, an electron in the quantum dot can be excited to a state of higher energy. In the case of a semiconducting quantum dot, this process corresponds to the transition of an electron from the valence band to the conductance band. The excited electron can drop back into the valence band releasing its energy as light. This light emission (photoluminescence) is illustrated in the figure on the right. The color of that light depends on the energy difference between the conductance band and the valence band, or the transition between discrete energy states when band structure is no longer a good definition in QDs. In the language of materials science, nanoscale semiconductor materials tightly confine either ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electron Mobility
In solid-state physics, the electron mobility characterises how quickly an electron can move through a metal or semiconductor when pulled by an electric field. There is an analogous quantity for holes, called hole mobility. The term carrier mobility refers in general to both electron and hole mobility. Electron and hole mobility are special cases of electrical mobility of charged particles in a fluid under an applied electric field. When an electric field ''E'' is applied across a piece of material, the electrons respond by moving with an average velocity called the drift velocity, v_d. Then the electron mobility ''μ'' is defined as v_d = \mu E. Electron mobility is almost always specified in units of cm2/( V⋅ s). This is different from the SI unit of mobility, m2/( V⋅ s). They are related by 1 m2/(V⋅s) = 104 cm2/(V⋅s). Conductivity is proportional to the product of mobility and carrier concentration. For example, the same conductivity could come from a small n ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Band Diagram
In solid-state physics of semiconductors, a band diagram is a diagram plotting various key electron energy levels (Fermi level and nearby energy band edges) as a function of some spatial dimension, which is often denoted ''x''. These diagrams help to explain the operation of many kinds of semiconductor devices and to visualize how bands change with position (band bending). The bands may be coloured to distinguish level filling. A band diagram should not be confused with a band structure plot. In both a band diagram and a band structure plot, the vertical axis corresponds to the energy of an electron. The difference is that in a band structure plot the horizontal axis represents the wave vector of an electron in an infinitely large, homogeneous material (a crystal or vacuum), whereas in a band diagram the horizontal axis represents position in space, usually passing through multiple materials. Because a band diagram shows the ''changes'' in the band structure from place to pl ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Band Gap
In solid-state physics, a band gap, also called an energy gap, is an energy range in a solid where no electronic states can exist. In graphs of the electronic band structure of solids, the band gap generally refers to the energy difference (in electron volts) between the top of the valence band and the bottom of the conduction band in insulators and semiconductors. It is the energy required to promote a valence electron bound to an atom to become a conduction electron, which is free to move within the crystal lattice and serve as a charge carrier to conduct electric current. It is closely related to the HOMO/LUMO gap in chemistry. If the valence band is completely full and the conduction band is completely empty, then electrons cannot move within the solid because there are no available states. If the electrons are not free to move within the crystal lattice, then there is no generated current due to no net charge carrier mobility. However, if some electrons transfer ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Valence And Conduction Bands
In solid-state physics, the valence band and conduction band are the bands closest to the Fermi level, and thus determine the electrical conductivity of the solid. In nonmetals, the valence band is the highest range of electron energies in which electrons are normally present at absolute zero temperature, while the conduction band is the lowest range of vacant electronic states. On a graph of the electronic band structure of a material, the valence band is located below the Fermi level, while the conduction band is located above it. The distinction between the valence and conduction bands is meaningless in metals, because conduction occurs in one or more partially filled bands that take on the properties of both the valence and conduction bands. Band gap In semiconductors and insulators the two bands are separated by a band gap, while in semimetals the bands overlap. A band gap is an energy range in a solid where no electron states can exist due to the quantization o ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Solar Cell
A solar cell, or photovoltaic cell, is an electronic device that converts the energy of light directly into electricity by the photovoltaic effect, which is a physical and chemical phenomenon.Solar Cells chemistryexplained.com It is a form of photoelectric cell, defined as a device whose electrical characteristics, such as current, voltage, or , vary when exposed to light. Individual solar cell devices are often the electrical building blocks of [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
PIN Diode
A pin is a device used for fastening objects or material together. Pin or PIN may also refer to: Computers and technology * Personal identification number (PIN), to access a secured system ** PIN pad, a PIN entry device * PIN, a former Dutch debit card system * An image on Pinterest * PIN diode, a semiconductor diode * Pin, a short lead in electronics * Pinning, the act of attaching a social media post to the top of a page to signify importance * To pin an object to another object in interface, such as pinning an application to the taskbar * Pin (computer program), a platform for creating analysis tools Awards, brooches, or fasteners * Award pin, recognising an achievement * Bobby pin or kirby grip or hair grip, a hairpin * Clevis pin, a three-piece fastener system * Collar pin, for a shirt collar * Drawing pin or thumbtack * Lapel pin, a small pin worn on clothing * Pin-back button, a badge fastened to garments with a safety pin. * Safety pin, pin which includes a s ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
