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Spin-valve CIP CPP
A spin valve is a device, consisting of two or more conducting magnetic materials, whose electrical resistance can change between two values depending on the relative alignment of the magnetization in the layers. The resistance change is a result of the giant magnetoresistive effect. The magnetic layers of the device align "up" or "down" depending on an external magnetic field. In the simplest case, a spin valve consists of a non-magnetic material sandwiched between two ferromagnets, one of which is fixed (pinned) by an antiferromagnet which acts to raise its magnetic coercivity and behaves as a "hard" layer, while the other is free (unpinned) and behaves as a "soft" layer. Due to the difference in coercivity, the soft layer changes polarity at lower applied magnetic field strength than the hard one. Upon application of a magnetic field of appropriate strength, the soft layer switches polarity, producing two distinct states: a parallel, low-resistance state, and an antiparallel, ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Spin Valve Schematic
Spin or spinning most often refers to: * Spinning (textiles), the creation of yarn or thread by twisting fibers together, traditionally by hand spinning * Spin, the rotation of an object around a central axis * Spin (propaganda), an intentionally biased portrayal of something Spin, spinning or spinnin may also refer to: Physics and mathematics * Spin, the rotation of an object around a central axis * Spin (physics) or particle spin, a fundamental property of elementary particles * Spin group, a particular double cover of the special orthogonal group SO(''n'') * Spin tensor, a tensor quantity for describing spinning motion in special relativity and general relativity * Spin (aerodynamics), autorotation of an aerodynamically stalled aeroplane * SPIN bibliographic database, an indexing and abstracting service focusing on physics research Textile arts * Spinning (polymers), a process for creating polymer fibres * Spinning (textiles), the creation of yarn or thread by twisting fibe ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electric Charge
Electric charge is the physical property of matter that causes charged matter to experience a force when placed in an electromagnetic field. Electric charge can be ''positive'' or ''negative'' (commonly carried by protons and electrons respectively). Like charges repel each other and unlike charges attract each other. An object with an absence of net charge is referred to as neutral. Early knowledge of how charged substances interact is now called classical electrodynamics, and is still accurate for problems that do not require consideration of quantum effects. Electric charge is a conserved property; the net charge of an isolated system, the amount of positive charge minus the amount of negative charge, cannot change. Electric charge is carried by subatomic particles. In ordinary matter, negative charge is carried by electrons, and positive charge is carried by the protons in the nuclei of atoms. If there are more electrons than protons in a piece of matter, it will have ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Magnetic Tunnel Junction
Tunnel magnetoresistance (TMR) is a magnetoresistive effect that occurs in a magnetic tunnel junction (MTJ), which is a component consisting of two ferromagnets separated by a thin insulator. If the insulating layer is thin enough (typically a few nanometres), electrons can tunnel from one ferromagnet into the other. Since this process is forbidden in classical physics, the tunnel magnetoresistance is a strictly quantum mechanical phenomenon. Magnetic tunnel junctions are manufactured in thin film technology. On an industrial scale the film deposition is done by magnetron sputter deposition; on a laboratory scale molecular beam epitaxy, pulsed laser deposition and electron beam physical vapor deposition are also utilized. The junctions are prepared by photolithography. Phenomenological description The direction of the two magnetizations of the ferromagnetic films can be switched individually by an external magnetic field. If the magnetizations are in a parallel orientation it ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Spin-transfer Torque
Spin-transfer torque (STT) is an effect in which the orientation of a magnetic layer in a magnetic tunnel junction or spin valve can be modified using a spin-polarized current. Charge carriers (such as electrons) have a property known as spin which is a small quantity of angular momentum intrinsic to the carrier. An electric current is generally unpolarized (consisting of 50% spin-up and 50% spin-down electrons); a spin polarized current is one with more electrons of either spin. By passing a current through a thick magnetic layer (usually called the “fixed layer”), one can produce a spin-polarized current. If this spin-polarized current is directed into a second, thinner magnetic layer (the “free layer”), the angular momentum can be transferred to this layer, changing its orientation. This can be used to excite oscillations or even flip the orientation of the magnet. The effects are usually seen only in nanometer scale devices. Spin-transfer torque memory Spin-tra ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MRAM
Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains. Developed in the mid-1980s, proponents have argued that magnetoresistive RAM will eventually surpass competing technologies to become a dominant or even universal memory. Currently, memory technologies in use such as flash RAM and DRAM have practical advantages that have so far kept MRAM in a niche role in the market. Description Unlike conventional RAM chip technologies, data in MRAM is not stored as electric charge or current flows, but by magnetic storage elements. The elements are formed from two ferromagnetic plates, each of which can hold a magnetization, separated by a thin insulating layer. One of the two plates is a permanent magnet set to a particular polarity; the other plate's magnetization can be changed to match that of an external field to store memory. This configuration is known as a magnetic tunnel junction and is the simplest st ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Hard Disk
A hard disk drive (HDD), hard disk, hard drive, or fixed disk is an electro-mechanical data storage device that stores and retrieves digital data using magnetic storage with one or more rigid rapidly rotating platters coated with magnetic material. The platters are paired with magnetic heads, usually arranged on a moving actuator arm, which read and write data to the platter surfaces. Data is accessed in a random-access manner, meaning that individual blocks of data can be stored and retrieved in any order. HDDs are a type of non-volatile storage, retaining stored data when powered off. Modern HDDs are typically in the form of a small rectangular box. Introduced by IBM in 1956, HDDs were the dominant secondary storage device for general-purpose computers beginning in the early 1960s. HDDs maintained this position into the modern era of servers and personal computers, though personal computing devices produced in large volume, like cell phones and tablets, rely on ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Sensor
A sensor is a device that produces an output signal for the purpose of sensing a physical phenomenon. In the broadest definition, a sensor is a device, module, machine, or subsystem that detects events or changes in its environment and sends the information to other electronics, frequently a computer processor. Sensors are always used with other electronics. Sensors are used in everyday objects such as touch-sensitive elevator buttons (tactile sensor) and lamps which dim or brighten by touching the base, and in innumerable applications of which most people are never aware. With advances in micromachinery and easy-to-use microcontroller platforms, the uses of sensors have expanded beyond the traditional fields of temperature, pressure and flow measurement, for example into Attitude and heading reference system, MARG sensors. Analog sensors such as potentiometers and force-sensing resistors are still widely used. Their applications include manufacturing and machinery, airplane ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Exchange Interaction
In chemistry and physics, the exchange interaction (with an exchange energy and exchange term) is a quantum mechanical effect that only occurs between identical particles. Despite sometimes being called an exchange force in an analogy to classical force, it is not a true force as it lacks a force carrier. The effect is due to the wave function of indistinguishable particles being subject to exchange symmetry, that is, either remaining unchanged (symmetric) or changing sign (antisymmetric) when two particles are exchanged. Both bosons and fermions can experience the exchange interaction. For fermions, this interaction is sometimes called Pauli repulsion and is related to the Pauli exclusion principle. For bosons, the exchange interaction takes the form of an effective attraction that causes identical particles to be found closer together, as in Bose–Einstein condensation. The exchange interaction alters the expectation value of the distance when the wave functions of two or more ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Spin Diffusion
Spin diffusion describes a situation wherein the individual nuclear spins undergo continuous exchange of energy. This permits polarization differences within the sample to be reduced on a timescale much shorter than relaxation effects. Spin diffusion is a process by which magnetization can be exchanged spontaneously between spins. The process is driven by dipolar coupling, and is therefore related to internuclear distances. Spin diffusion has been used to study many structural problems in the past, ranging from domain sizes in polymers and disorder in glassy materials to high-resolution crystal structure determination of small molecules and proteins. In solid-state nuclear magnetic resonance, spin diffusion plays a major role in Cross Polarization (CP) experiments. As mentioned before, by transferring the magnetization (and thus the population) from nuclei with different values for the spin-lattice relaxation (''T1''), the overall time for the experiment is reduced. Is a very ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Fermi Energy
The Fermi energy is a concept in quantum mechanics usually referring to the energy difference between the highest and lowest occupied single-particle states in a quantum system of non-interacting fermions at absolute zero temperature. In a Fermi gas, the lowest occupied state is taken to have zero kinetic energy, whereas in a metal, the lowest occupied state is typically taken to mean the bottom of the conduction band. The term "Fermi energy" is often used to refer to a different yet closely related concept, the Fermi ''level'' (also called electrochemical potential).The use of the term "Fermi energy" as synonymous with Fermi level (a.k.a. electrochemical potential) is widespread in semiconductor physics. For example:''Electronics (fundamentals And Applications)''by D. Chattopadhyay''Semiconductor Physics and Applications''by Balkanski and Wallis. There are a few key differences between the Fermi level and Fermi energy, at least as they are used in this article: * The Fermi energy ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electrical Resistance
The electrical resistance of an object is a measure of its opposition to the flow of electric current. Its reciprocal quantity is , measuring the ease with which an electric current passes. Electrical resistance shares some conceptual parallels with mechanical friction. The SI unit of electrical resistance is the ohm (), while electrical conductance is measured in siemens (S) (formerly called the 'mho' and then represented by ). The resistance of an object depends in large part on the material it is made of. Objects made of electrical insulators like rubber tend to have very high resistance and low conductance, while objects made of electrical conductors like metals tend to have very low resistance and high conductance. This relationship is quantified by resistivity or conductivity. The nature of a material is not the only factor in resistance and conductance, however; it also depends on the size and shape of an object because these properties are extensive rather than intens ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Density Of States
In solid state physics and condensed matter physics, the density of states (DOS) of a system describes the number of modes per unit frequency range. The density of states is defined as D(E) = N(E)/V , where N(E)\delta E is the number of states in the system of volume V whose energies lie in the range from E to E+\delta E. It is mathematically represented as a distribution by a probability density function, and it is generally an average over the space and time domains of the various states occupied by the system. The density of states is directly related to the dispersion relations of the properties of the system. High DOS at a specific energy level means that many states are available for occupation. Generally, the density of states of matter is continuous. In isolated systems however, such as atoms or molecules in the gas phase, the density distribution is discrete, like a spectral density. Local variations, most often due to distortions of the original system, are often referr ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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