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Saturation Velocity
Saturation velocity is the maximum velocity a charge carrier in a semiconductor, generally an electron, attains in the presence of very high electric fields. When this happens, the semiconductor is said to be in a state of velocity saturation. Charge carriers normally move at an average drift speed proportional to the electric field strength they experience temporally. The proportionality constant is known as Electrical mobility, mobility of the carrier, which is a material property. A good Electrical conductor, conductor would have a high mobility value for its charge carrier, which means higher velocity, and consequently higher current values for a given electric field strength. There is a limit though to this process and at some high field value, a charge carrier can not move any faster, having reached its saturation velocity, due to mechanisms that eventually limit the movement of the carriers in the material. As the applied electric field increases from that point, the car ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Drift Velocity Of Electrons
Drift or Drifts may refer to: Geography * Drift or ford (crossing) of a river * Drift (navigation), difference between heading and course of a vessel * Drift, Kentucky, unincorporated community in the United States * In Cornwall, England: ** Drift, Cornwall, village ** Drift Reservoir, associated with the village Science, technology, and physics * Directional Recoil Identification from Tracks, a dark-matter experiment * Drift (video gaming), a typical game-controller malfunction * Drift pin, metalworking tool for localizing hammer blows and for aligning holes * Drift (geology), deposited material of glacial origin * drift (in mining), a roughly horizontal passage; an adit * Drift, linear term of a stochastic process * Drift (motorsport), the controlled sliding of a vehicle through a sharp turn, either via over-steering with sudden sharp braking, or counter-steering with a sudden "clutch kick" acceleration * Incremental changes: ** Drift (linguistics), a type of language change * ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Velocity Overshoot
Velocity overshoot is a physical effect resulting in transit times for charge carriers between terminals that are smaller than the time required for emission of an optical phonon. The velocity therefore exceeds the saturation velocity up to three times, which leads to faster field-effect transistor or bipolar transistor switching. The effect is noticeable in the ordinary field-effect transistor for the gates shorter than 100 nm. Ballistic collection transistor The device intentionally designed to benefit from the velocity overshoot is called ballistic collection transistor (not to be mistaken with the ballistic deflection transistor). See also *Ballistic conduction In mesoscopic physics, ballistic conduction (ballistic transport) is the unimpeded flow (or transport) of charge carriers (usually electrons), or energy-carrying particles, over relatively long distances in a material. In general, the resistivity ... References Charge carriers {{CMP-stub ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Semiconductor Device
A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state, rather than as free electrons across a vacuum (typically liberated by thermionic emission) or as free electrons and ions through an ionized gas. Semiconductor devices are manufactured both as single discrete devices and as integrated circuit (IC) chips, which consist of two or more devices—which can number from the hundreds to the billions—manufactured and interconnected on a single semiconductor wafer (also called a substrate). Semiconductor materials are useful because their behavior can be easily manipulated by the deliberate addition of impurities, known as dopin ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Transferred Electron Device
A Gunn diode, also known as a transferred electron device (TED), is a form of diode, a two-terminal semiconductor electronic component, with negative differential resistance, used in high-frequency electronics. It is based on the "Gunn effect" discovered in 1962 by physicist J. B. Gunn. Its main uses are in electronic oscillators to generate microwaves, in applications such as radar speed guns, microwave relay data link transmitters, and automatic door openers. Its internal construction is unlike other diodes in that it consists only of N-doped semiconductor material, whereas most diodes consist of both P and N-doped regions. It, therefore, conducts in both directions and cannot rectify alternating current like other diodes, which is why some sources do not use the term ''diode'' but prefer TED. In the Gunn diode, three regions exist: two are heavily N-doped on each terminal, with a thin layer of lightly n-doped material between them. When a voltage is applied to the device, th ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gunn Diode
A Gunn diode, also known as a transferred electron device (TED), is a form of diode, a two-terminal semiconductor electronic component, with negative differential resistance, used in high-frequency electronics. It is based on the "Gunn effect" discovered in 1962 by physicist J. B. Gunn. Its main uses are in electronic oscillators to generate microwaves, in applications such as radar speed guns, microwave relay data link transmitters, and automatic door openers. Its internal construction is unlike other diodes in that it consists only of N-doped semiconductor material, whereas most diodes consist of both P and N-doped regions. It, therefore, conducts in both directions and cannot rectify alternating current like other diodes, which is why some sources do not use the term ''diode'' but prefer TED. In the Gunn diode, three regions exist: two are heavily N-doped on each terminal, with a thin layer of lightly n-doped material between them. When a voltage is applied to the device, ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Conduction Band
In solid-state physics, the valence band and conduction band are the bands closest to the Fermi level, and thus determine the electrical conductivity of the solid. In nonmetals, the valence band is the highest range of electron energies in which electrons are normally present at absolute zero temperature, while the conduction band is the lowest range of vacant electronic states. On a graph of the electronic band structure of a semiconducting material, the valence band is located below the Fermi level, while the conduction band is located above it. The distinction between the valence and conduction bands is meaningless in metals, because conduction occurs in one or more partially filled bands that take on the properties of both the valence and conduction bands. Band gap In semiconductors and insulators the two bands are separated by a band gap, while in conductors the bands overlap. A band gap is an energy range in a solid where no electron states can exist due to ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Energy Band
In solid-state physics, the electronic band structure (or simply band structure) of a solid describes the range of energy levels that electrons may have within it, as well as the ranges of energy that they may not have (called ''band gaps'' or ''forbidden bands''). Band theory derives these bands and band gaps by examining the allowed quantum mechanical wave functions for an electron in a large, periodic lattice of atoms or molecules. Band theory has been successfully used to explain many physical properties of solids, such as electrical resistivity and optical absorption, and forms the foundation of the understanding of all Solid-state (electronics), solid-state devices (transistors, solar cells, etc.). Why bands and band gaps occur The formation of electronic bands and band gaps can be illustrated with two complementary models for electrons in solids. The first one is the nearly free electron model, in which the electrons are assumed to move almost freely within the mater ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Graphene
Graphene () is a carbon allotrope consisting of a Single-layer materials, single layer of atoms arranged in a hexagonal lattice, honeycomb planar nanostructure. The name "graphene" is derived from "graphite" and the suffix -ene, indicating the presence of double bonds within the carbon structure. Graphene is known for its exceptionally high Ultimate tensile strength, tensile strength, Electrical resistivity and conductivity, electrical conductivity, Transparency and translucency, transparency, and being the thinnest two-dimensional material in the world. Despite the nearly transparent nature of a single graphene sheet, graphite (formed from stacked layers of graphene) appears black because it absorbs all visible light wavelengths. On a microscopic scale, graphene is the strongest material ever measured. The existence of graphene was first theorized in 1947 by P. R. Wallace, Philip R. Wallace during his research on graphite's electronic properties, while the term ''graphen ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Carbon Nanotube
A carbon nanotube (CNT) is a tube made of carbon with a diameter in the nanometre range ( nanoscale). They are one of the allotropes of carbon. Two broad classes of carbon nanotubes are recognized: * ''Single-walled carbon nanotubes'' (''SWCNTs'') have diameters around 0.5–2.0 nanometres, about 100,000 times smaller than the width of a human hair. They can be idealised as cutouts from a two-dimensional graphene sheet rolled up to form a hollow cylinder. * ''Multi-walled carbon nanotubes'' (''MWCNTs'') consist of nested single-wall carbon nanotubes in a nested, tube-in-tube structure. Double- and triple-walled carbon nanotubes are special cases of MWCNT. Carbon nanotubes can exhibit remarkable properties, such as exceptional tensile strength and thermal conductivity because of their nanostructure and strength of the bonds between carbon atoms. Some SWCNT structures exhibit high electrical conductivity while others are semiconductors. In addition, carbon nanotubes can b ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Carbon
Carbon () is a chemical element; it has chemical symbol, symbol C and atomic number 6. It is nonmetallic and tetravalence, tetravalent—meaning that its atoms are able to form up to four covalent bonds due to its valence shell exhibiting 4 electrons. It belongs to group 14 of the periodic table. Carbon makes up about 0.025 percent of Earth's crust. Three Isotopes of carbon, isotopes occur naturally, carbon-12, C and carbon-13, C being stable, while carbon-14, C is a radionuclide, decaying with a half-life of 5,700 years. Carbon is one of the timeline of chemical element discoveries#Pre-modern and early modern discoveries, few elements known since antiquity. Carbon is the 15th abundance of elements in Earth's crust, most abundant element in the Earth's crust, and the abundance of the chemical elements, fourth most abundant element in the universe by mass after hydrogen, helium, and oxygen. Carbon's abundance, its unique diversity of organic compounds, and its unusual abi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Nanotechnology
Nanotechnology is the manipulation of matter with at least one dimension sized from 1 to 100 nanometers (nm). At this scale, commonly known as the nanoscale, surface area and quantum mechanical effects become important in describing properties of matter. This definition of nanotechnology includes all types of research and technologies that deal with these special properties. It is common to see the plural form "nanotechnologies" as well as "nanoscale technologies" to refer to research and applications whose common trait is scale. An earlier understanding of nanotechnology referred to the particular technological goal of precisely manipulating atoms and molecules for fabricating macroscale products, now referred to as molecular nanotechnology. Nanotechnology defined by scale includes fields of science such as surface science, organic chemistry, molecular biology, semiconductor physics, energy storage, engineering, microfabrication, and molecular engineering. The associated rese ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Transistors
A transistor is a semiconductor device used to Electronic amplifier, amplify or electronic switch, switch electrical signals and electric power, power. It is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminal (electronics), terminals for connection to an electronic circuit. A voltage or Electric current, current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more in miniature form are found embedded in integrated circuits. Because transistors are the key active components in practically all modern electronics, many people consider them one of the 20th century's greatest inventions. Physicist Julius Edgar Lilienfeld proposed the concept of a field-effect transisto ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
