Poole–Frenkel Effect
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Poole–Frenkel Effect
In solid-state physics, the Poole–Frenkel effect (also known as Frenkel-Poole emissionSze, S. M., ''Physics of Semiconductor Devices'', 2nd edition, Section 4.3.4.) is a model describing the mechanism of trap-assisted electron transport in an electrical insulator. It is named after Yakov Frenkel, who published on it in 1938, extending the theory previously developed by H. H. Poole. Electrons can move slowly through an insulator by the following process. The electrons are generally trapped in localized states (loosely speaking, they are "stuck" to a single atom, and not free to move around the crystal). Occasionally, random thermal fluctuations will give an electron enough energy to leave its localized state, and move to the conduction band. Once there, the electron can move through the crystal, for a brief amount of time, before relaxing into another localized state (in other words, "sticking" to a different atom). The Poole–Frenkel effect describes how, in a large electric field ...
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Solid-state Physics
Solid-state physics is the study of rigid matter, or solids, through methods such as quantum mechanics, crystallography, electromagnetism, and metallurgy. It is the largest branch of condensed matter physics. Solid-state physics studies how the large-scale properties of solid materials result from their atomic-scale properties. Thus, solid-state physics forms a theoretical basis of materials science. It also has direct applications, for example in the technology of transistors and semiconductors. Background Solid materials are formed from densely packed atoms, which interact intensely. These interactions produce the mechanical (e.g. hardness and Elasticity (physics), elasticity), Heat conduction, thermal, Electrical conduction, electrical, Magnetism, magnetic and Crystal optics, optical properties of solids. Depending on the material involved and the conditions in which it was formed, the atoms may be arranged in a regular, geometric pattern (crystal, crystalline solids, ...
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Boltzmann's Constant
The Boltzmann constant ( or ) is the proportionality factor that relates the average relative kinetic energy of particles in a gas with the thermodynamic temperature of the gas. It occurs in the definitions of the kelvin and the gas constant, and in Planck's law of black-body radiation and Boltzmann's entropy formula, and is used in calculating thermal noise in resistors. The Boltzmann constant has dimensions of energy divided by temperature, the same as entropy. It is named after the Austrian scientist Ludwig Boltzmann. As part of the 2019 redefinition of SI base units, the Boltzmann constant is one of the seven " defining constants" that have been given exact definitions. They are used in various combinations to define the seven SI base units. The Boltzmann constant is defined to be exactly . Roles of the Boltzmann constant Macroscopically, the ideal gas law states that, for an ideal gas, the product of pressure and volume is proportional to the product of amount of ...
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Charge Trap Flash
Charge trap flash (CTF) is a semiconductor memory technology used in creating non-volatile NOR and NAND flash memory. It is a type of floating-gate MOSFET memory technology, but differs from the conventional floating-gate technology in that it uses a silicon nitride film to store electrons rather than the doped polycrystalline silicon typical of a floating-gate structure. This approach allows memory manufacturers to reduce manufacturing costs five ways: # Fewer process steps are required to form a charge storage node # Smaller process geometries can be used (therefore reducing chip size and cost) # Multiple bits can be stored on a single flash memory cell # Improved reliability # Higher yield since the charge trap is less susceptible to point defects in the tunnel oxide layer While the charge-trapping concept was around earlier, it wasn't until 2002 that AMD and Fujitsu produced high-volume charge-trapping flash memory. They began the commercial production of charge-trapping flash ...
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Fowler-Nordheim Tunneling
Field electron emission, also known as field emission (FE) and electron field emission, is emission of electrons induced by an electrostatic field. The most common context is field emission from a solid surface into a vacuum. However, field emission can take place from solid or liquid surfaces, into a vacuum, a fluid (e.g. air), or any non-conducting or weakly conducting dielectric. The field-induced promotion of electrons from the valence to conduction band of semiconductors (the Zener effect) can also be regarded as a form of field emission. The terminology is historical because related phenomena of surface photoeffect, thermionic emission (or Richardson–Dushman effect) and "cold electronic emission", i.e. the emission of electrons in strong static (or quasi-static) electric fields, were discovered and studied independently from the 1880s to 1930s. When field emission is used without qualifiers it typically means "cold emission". Field emission in pure metals occurs in hig ...
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Charge Trap Flash
Charge trap flash (CTF) is a semiconductor memory technology used in creating non-volatile NOR and NAND flash memory. It is a type of floating-gate MOSFET memory technology, but differs from the conventional floating-gate technology in that it uses a silicon nitride film to store electrons rather than the doped polycrystalline silicon typical of a floating-gate structure. This approach allows memory manufacturers to reduce manufacturing costs five ways: # Fewer process steps are required to form a charge storage node # Smaller process geometries can be used (therefore reducing chip size and cost) # Multiple bits can be stored on a single flash memory cell # Improved reliability # Higher yield since the charge trap is less susceptible to point defects in the tunnel oxide layer While the charge-trapping concept was around earlier, it wasn't until 2002 that AMD and Fujitsu produced high-volume charge-trapping flash memory. They began the commercial production of charge-trapping flash ...
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Maxwell–Boltzmann Statistics
In statistical mechanics, Maxwell–Boltzmann statistics describes the distribution of Classical physics, classical material particles over various energy states in thermal equilibrium. It is applicable when the temperature is high enough or the particle density is low enough to render quantum effects negligible. The expected number of particles with energy \varepsilon_i for Maxwell–Boltzmann statistics is :\langle N_i \rangle = \frac = \frac\,g_i e^, where: *\varepsilon_i is the energy of the ''i''-th energy level, *\langle N_i \rangle is the average number of particles in the set of states with energy \varepsilon_i, *g_i is the Degenerate energy level, degeneracy of energy level ''i'', that is, the number of states with energy \varepsilon_i which may nevertheless be distinguished from each other by some other means,For example, two simple point particles may have the same energy, but different momentum vectors. They may be distinguished from each other on this basis, and th ...
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Fermi Level
The Fermi level of a solid-state body is the thermodynamic work required to add one electron to the body. It is a thermodynamic quantity usually denoted by ''µ'' or ''E''F for brevity. The Fermi level does not include the work required to remove the electron from wherever it came from. A precise understanding of the Fermi level—how it relates to electronic band structure in determining electronic properties, how it relates to the voltage and flow of charge in an electronic circuit—is essential to an understanding of solid-state physics. In band structure theory, used in solid state physics to analyze the energy levels in a solid, the Fermi level can be considered to be a hypothetical energy level of an electron, such that at thermodynamic equilibrium this energy level would have a ''50% probability of being occupied at any given time''. The position of the Fermi level in relation to the band energy levels is a crucial factor in determining electrical properties. The Fermi le ...
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Diffusion
Diffusion is the net movement of anything (for example, atoms, ions, molecules, energy) generally from a region of higher concentration to a region of lower concentration. Diffusion is driven by a gradient in Gibbs free energy or chemical potential. It is possible to diffuse "uphill" from a region of lower concentration to a region of higher concentration, like in spinodal decomposition. The concept of diffusion is widely used in many fields, including physics (particle diffusion), chemistry, biology, sociology, economics, and finance (diffusion of people, ideas, and price values). The central idea of diffusion, however, is common to all of these: a substance or collection undergoing diffusion spreads out from a point or location at which there is a higher concentration of that substance or collection. A gradient is the change in the value of a quantity, for example, concentration, pressure, or temperature with the change in another variable, usually distance. A change in c ...
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Space Charge
Space charge is an interpretation of a collection of electric charges in which excess electric charge is treated as a continuum of charge distributed over a region of space (either a volume or an area) rather than distinct point-like charges. This model typically applies when charge carriers have been emitted from some region of a solid—the cloud of emitted carriers can form a space charge region if they are sufficiently spread out, or the charged atoms or molecules left behind in the solid can form a space charge region. Space charge only occurs in dielectric media (including vacuum) because in a conductive medium the charge tends to be rapidly neutralized or screened. The sign of the space charge can be either negative or positive. This situation is perhaps most familiar in the area near a metal object when it is heated to incandescence in a vacuum. This effect was first observed by Thomas Edison in light bulb filaments, where it is sometimes called the Edison effect. Space c ...
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Ohmic Contact
An ohmic contact is a non-rectifying electrical junction: a junction between two conductors that has a linear current–voltage (I–V) curve as with Ohm's law. Low-resistance ohmic contacts are used to allow charge to flow easily in both directions between the two conductors, without blocking due to rectification or excess power dissipation due to voltage thresholds. By contrast, a junction or contact that does not demonstrate a linear I–V curve is called non-ohmic. Non-ohmic contacts come in a number of forms, such as p–n junction, Schottky barrier, rectifying heterojunction, or breakdown junction. Generally the term "ohmic contact" implicitly refers to an ohmic contact of a metal to a semiconductor, where achieving ohmic contact resistance is possible but requires careful technique. Metal–metal ohmic contacts are relatively simpler to make, by ensuring direct contact between the metals without intervening layers of insulating contamination, excessive roughness or oxidati ...
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Refractive Index
In optics, the refractive index (or refraction index) of an optical medium is a dimensionless number that gives the indication of the light bending ability of that medium. The refractive index determines how much the path of light is bent, or refracted, when entering a material. This is described by Snell's law of refraction, , where ''θ''1 and ''θ''2 are the angle of incidence and angle of refraction, respectively, of a ray crossing the interface between two media with refractive indices ''n''1 and ''n''2. The refractive indices also determine the amount of light that is reflected when reaching the interface, as well as the critical angle for total internal reflection, their intensity ( Fresnel's equations) and Brewster's angle. The refractive index can be seen as the factor by which the speed and the wavelength of the radiation are reduced with respect to their vacuum values: the speed of light in a medium is , and similarly the wavelength in that medium is , where ''Π...
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