|
Isobutylgermane
Isobutylgermane (IBGe, Chemical formula: (CH3)2CHCH2GeH3, is an organogermanium compound. It is a colourless, volatile liquid that is used in MOVPE (Metalorganic Vapor Phase Epitaxy) as an alternative to germane. IBGe is used in the deposition of Ge films and Ge-containing thin semiconductor films such as SiGe in strained silicon application, and GeSbTe in NAND Flash applications. Properties IBGe is a non-pyrophoric liquid source for chemical vapor deposition ( CVD) and atomic layer deposition (ALD) of semiconductors. It possesses very high vapor pressure and is considerably less hazardous than germane gas. IBGe also offers lower decomposition temperature (the onset of decomposition at ca. 325-350 °C).,Safer alternativ ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Organogermanium Compounds
Organogermanium compounds are organometallic compounds containing a carbon to germanium or hydrogen to germanium chemical bond. Organogermanium chemistry is the corresponding chemical science. Germanium shares group 14 in the periodic table with silicon, tin and lead, and not surprisingly the chemistry of organogermanium is in between that of organosilicon compounds and organotin compounds. One reason that limited synthetic value of organogermanium compound is costs of germanium compounds. On the other hand, germanium is advocated as a non-toxic alternative to many toxic organotin reagents. Compounds like tetramethylgermanium and tetraethylgermanium are used in the microelectronics industry as precursors for germanium dioxide chemical vapor deposition. The first organogermanium compound, tetraethylgermane, was synthesised by Winkler in 1887, by the reaction of germanium tetrachloride with diethylzinc. The organogermanium compound ''bis (2-Carboxyethylgermanium)sesquioxide'' ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Organogermanium Compound
Organogermanium compounds are organometallic compounds containing a carbon to germanium or hydrogen to germanium chemical bond. Organogermanium chemistry is the corresponding chemical science. Germanium shares group 14 in the periodic table with silicon, tin and lead, and not surprisingly the chemistry of organogermanium is in between that of organosilicon compounds and organotin compounds. One reason that limited synthetic value of organogermanium compound is costs of germanium compounds. On the other hand, germanium is advocated as a non-toxic alternative to many toxic organotin reagents. Compounds like tetramethylgermanium and tetraethylgermanium are used in the microelectronics industry as precursors for germanium dioxide chemical vapor deposition. The first organogermanium compound, tetraethylgermane, was synthesised by Winkler in 1887, by the reaction of germanium tetrachloride with diethylzinc. The organogermanium compound ''bis (2-Carboxyethylgermanium)sesquioxide'' w ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOVPE
Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition. This takes place not in vacuum, but from the gas phase at moderate pressures (10 to 760 Torr). As such, this technique is preferred for the formation of devices incorporating thermodynamically metastable alloys, and it has become a major process in the manufacture of optoelectronics, such as Light-emitting diodes. It was invented in 1968 at North American Aviation (later Rockwell International) Science Center by Harold M. Manasevit. Basic principles In MOCVD ultrapure precursor gases are injected into a reactor, ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Rohm And Haas
Rohm and Haas Company is a manufacturer of specialty chemicals for end use markets such as building and construction, electronic devices, packaging, household and personal care products. Headquartered in Philadelphia, the company is organized into three business groups of Specialty Materials, Performance Materials and Electronic Materials, and also has two stand-alone businesses of Powder Coatings and Salt. Formerly a Fortune 500 Company, Rohm and Haas employs more than 17,000 people in 27 countries, with its last sales revenue reported as an independent company at US$8.9 billion. Dow Chemical Company bought Rohm and Haas for $15 billion in 2009. History The company was founded in Esslingen, Germany, by Dr. Otto Röhm and Mr. Otto Haas in 1907. Haas moved to Philadelphia and began the American side of the business on September 1, 1909, from an office on Front Street, while Otto Röhm remained in Germany to run a company that would eventually become Röhm GmbH. Röhm improv ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Semiconductors
A semiconductor is a material which has an electrical resistivity and conductivity, electrical conductivity value falling between that of a electrical conductor, conductor, such as copper, and an insulator (electricity), insulator, such as glass. Its electrical resistivity and conductivity, resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities ("doping (semiconductor), doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created. The behavior of charge carriers, which include electrons, ions, and electron holes, at these junctions is the basis of diodes, transistors, and most modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most common s ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Nanowires
A nanowire is a nanostructure in the form of a wire with the diameter of the order of a nanometre (10−9 metres). More generally, nanowires can be defined as structures that have a thickness or diameter constrained to tens of nanometers or less and an unconstrained length. At these scales, quantum mechanical effects are important—which coined the term "quantum wires". Many different types of nanowires exist, including superconducting (e.g. YBCO), metallic (e.g. Ni, Pt, Au, Ag), semiconducting (e.g. silicon nanowires (SiNWs), InP, GaN) and insulating (e.g. SiO2, TiO2). Molecular nanowires are composed of repeating molecular units either organic (e.g. DNA) or inorganic (e.g. Mo6S9−xIx). Characteristics upright=1.2, Crystalline 2×2-atom tin selenide nanowire grown inside a single-wall carbon nanotube (tube diameter ~1 nm). file:HgTe@SWCNT.png, A noise-filtered HRTEM image of a HgTe extreme nanowire embedded down the central pore of a SWCNT. The image is also accom ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Germanium
Germanium is a chemical element with the symbol Ge and atomic number 32. It is lustrous, hard-brittle, grayish-white and similar in appearance to silicon. It is a metalloid in the carbon group that is chemically similar to its group neighbors silicon and tin. Like silicon, germanium naturally reacts and forms complexes with oxygen in nature. Because it seldom appears in high concentration, germanium was discovered comparatively late in the discovery of the elements. Germanium ranks near fiftieth in relative abundance of the elements in the Earth's crust. In 1869, Dmitri Mendeleev predicted its existence and some of its properties from its position on his periodic table, and called the element ekasilicon. In 1886, Clemens Winkler at Freiberg University found the new element, along with silver and sulfur, in the mineral argyrodite. Winkler named the element after his country, Germany. Germanium is mined primarily from sphalerite (the primary ore of zinc), though germanium is ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Silicon
Silicon is a chemical element with the symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic luster, and is a tetravalent metalloid and semiconductor. It is a member of group 14 in the periodic table: carbon is above it; and germanium, tin, lead, and flerovium are below it. It is relatively unreactive. Because of its high chemical affinity for oxygen, it was not until 1823 that Jöns Jakob Berzelius was first able to prepare it and characterize it in pure form. Its oxides form a family of anions known as silicates. Its melting and boiling points of 1414 °C and 3265 °C, respectively, are the second highest among all the metalloids and nonmetals, being surpassed only by boron. Silicon is the eighth most common element in the universe by mass, but very rarely occurs as the pure element in the Earth's crust. It is widely distributed in space in cosmic dusts, planetoids, and planets as various forms of silicon dioxide ( ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Solar Cells
A solar cell, or photovoltaic cell, is an electronic device that converts the energy of light directly into electricity by the photovoltaic effect, which is a physics, physical and Chemical substance, chemical phenomenon.Solar Cells chemistryexplained.com It is a form of photoelectric cell, defined as a device whose electrical characteristics, such as Electric current, current, voltage, or Electrical resistance and conductance, resistance, vary when exposed to light. Individual solar cell devices are often the electrical building blocks of solar panel, photovoltaic modules, known colloquially as solar panels. The common single junction silicon solar cell can produce a maximum open-circuit voltage of approximately 0.5 volts to 0.6volts. Solar cells are described as being Photovoltaics, photovoltaic, irrespe ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
InGaAs
Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are ( group III) elements of the periodic table while arsenic is a (group V) element. Alloys made of these chemical groups are referred to as "III-V" compounds. InGaAs has properties intermediate between those of GaAs and InAs. InGaAs is a room-temperature semiconductor with applications in electronics and photonics. The principal importance of GaInAs is its application as a high-speed, high sensitivity photodetector of choice for optical fiber telecommunications. Nomenclature Indium gallium arsenide (InGaAs) and gallium-indium arsenide (GaInAs) are used interchangeably. According to IUPAC standards the preferred nomenclature for the alloy is GaxIn1-xAs where the group-III elements appear in order of increasing atomic number, as in the related alloy system AlxGa1-xAs. By far, the m ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
InGaP
Indium gallium phosphide (InGaP), also called gallium indium phosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus. It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. It is used mainly in HEMT and HBT structures, but also for the fabrication of high efficiency solar cells used for space applications and, in combination with aluminium ( AlGaInP alloy) to make high brightness LEDs with orange-red, orange, yellow, and green colors. Some semiconductor devices such as EFluor Nanocrystal use InGaP as their core particle. Indium gallium phosphide is a solid solution of indium phosphide and gallium phosphide. Ga0.5In0.5P is a solid solution of special importance, which is almost lattice matched to GaAs. This allows, in combination with (AlxGa1−x)0.5In0.5, the growth of lattice matched quantum wells for red emitting semiconducto ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
CNRS
The French National Centre for Scientific Research (french: link=no, Centre national de la recherche scientifique, CNRS) is the French state research organisation and is the largest fundamental science agency in Europe. In 2016, it employed 31,637 staff, including 11,137 tenured researchers, 13,415 engineers and technical staff, and 7,085 contractual workers. It is headquartered in Paris and has administrative offices in Brussels, Beijing, Tokyo, Singapore, Washington, D.C., Bonn, Moscow, Tunis, Johannesburg, Santiago de Chile, Israel, and New Delhi. From 2009 to 2016, the CNRS was ranked No. 1 worldwide by the SCImago Institutions Rankings (SIR), an international ranking of research-focused institutions, including universities, national research centers, and companies such as Facebook or Google. The CNRS ranked No. 2 between 2017 and 2021, then No. 3 in 2022 in the same SIR, after the Chinese Academy of Sciences and before universities such as Harvard University, MIT, or Stanford ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
.jpg "Click for more on -> CNRS")