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IGBT
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch, which, as it was developed, came to combine high efficiency and fast switching. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure. Although the structure of the IGBT is topologically the same as a thyristor with a "MOS" gate ( MOS-gate thyristor), the thyristor action is completely suppressed, and only the transistor action is permitted in the entire device operation range. It is used in switching power supplies in high-power applications: variable-frequency drives (VFDs), electric cars, trains, variable-speed refrigerators, lamp ballasts, arc-welding machines, induction hobs, and air conditioners. Since it is designed to turn on and off rapidly, the IGBT can synthesize complex waveforms with pulse-width modulation and low-pass filters, so it is also used in switching a ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
IGBT Cross Section
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch, which, as it was developed, came to combine high efficiency and fast switching. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) Metal gate, gate structure. Although the structure of the IGBT is topologically the same as a thyristor with a "MOS" gate (MOS-controlled thyristor, MOS-gate thyristor), the thyristor action is completely suppressed, and only the transistor action is permitted in the entire device operation range. It is used in switching power supply, switching power supplies in high-power applications: variable-frequency drives (VFDs), electric cars, trains, variable-speed refrigerators, lamp ballasts, arc-welding machines, induction hobs, and air conditioners. Since it is designed to turn on and off rapidly, the IGBT can synthesize complex waveforms with pulse-width modulat ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
IGBT Symbol
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch, which, as it was developed, came to combine high efficiency and fast switching. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure. Although the structure of the IGBT is topologically the same as a thyristor with a "MOS" gate ( MOS-gate thyristor), the thyristor action is completely suppressed, and only the transistor action is permitted in the entire device operation range. It is used in switching power supplies in high-power applications: variable-frequency drives (VFDs), electric cars, trains, variable-speed refrigerators, lamp ballasts, arc-welding machines, induction hobs, and air conditioners. Since it is designed to turn on and off rapidly, the IGBT can synthesize complex waveforms with pulse-width modulation and low-pass filters, so it is also used in switching am ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Power Semiconductor Device
A power semiconductor device is a semiconductor device used as a switch or rectifier in power electronics (for example in a switch-mode power supply). Such a device is also called a power device or, when used in an integrated circuit, a power IC. A power semiconductor device is usually used in "commutation mode" (i.e., it is either on or off), and therefore has a design optimized for such usage; it should usually not be used in linear operation. Linear power circuits are widespread as voltage regulators, audio amplifiers, and radio frequency amplifiers. Power semiconductors are found in systems delivering as little as a few tens of milliwatts for a headphone amplifier, up to around a gigawatt in a high voltage direct current transmission line. History The first electronic device used in power circuits was the electrolytic rectifier - an early version was described by a French experimenter, A. Nodon, in 1904. These were briefly popular with early radio experimenters as they c ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Variable-frequency Drive
A variable-frequency drive (VFD) is a type of motor drive used in electro-mechanical drive systems to control AC motor speed and torque by varying motor input frequency and, depending on topology, to control associated voltage or current variation., quote is per definition on p. 4 of NEMA Standards Publication ICS 7.2-2021. VFDs may also be known as 'AFDs' (adjustable-frequency drives), 'ASDs' (adjustable-speed drives), 'VSDs' (variable-speed drives), 'AC drives', 'micro drives', 'inverter drives' or, simply, 'drives'. VFDs are used in applications ranging from small appliances to large compressors. An increasing number of end users are showing greater interest in electric drive systems due to more stringent emission standards and demand for increased reliability and better availability. Systems using VFDs can be more efficient than those using throttling control of fluid flow, such as in systems with pumps and damper control for fans. However, the global market penetration fo ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Transistor
upright=1.4, gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (pink). A transistor is a semiconductor device used to Electronic amplifier, amplify or electronic switch, switch electrical signals and electrical power, power. The transistor is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more are found embedded in integrated circuits. Austro-Hungarian physicist Julius Edgar Lilienfeld proposed the concept of a field-effect transistor in 1926, but it was not possible to actually constru ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Power MOSFET
A power MOSFET is a specific type of metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to the other power semiconductor devices, such as an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high switching speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to a degree that the gate voltage needs to be higher than the voltage under control. The design of power MOSFETs was made possible by the evolution of MOSFET and CMOS technology, used for manufacturing integrated circuits since the 1960s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET. The power MOSFET, which is commonly used in power electronics, was adapted from the standard MOSFET and commercially introduced in the 1970s. The power MOSFET is the most common power semicond ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Power MOSFET
A power MOSFET is a specific type of metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to the other power semiconductor devices, such as an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high switching speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to a degree that the gate voltage needs to be higher than the voltage under control. The design of power MOSFETs was made possible by the evolution of MOSFET and CMOS technology, used for manufacturing integrated circuits since the 1960s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET. The power MOSFET, which is commonly used in power electronics, was adapted from the standard MOSFET and commercially introduced in the 1970s. The power MOSFET is the most common power semicond ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Thyristor
A thyristor () is a solid-state semiconductor device with four layers of alternating P- and N-type materials used for high-power applications. It acts exclusively as a bistable switch (or a latch), conducting when the gate receives a current trigger, and continuing to conduct until the voltage across the device is reversed biased, or until the voltage is removed (by some other means). There are two designs, differing in what triggers the conducting state. In a three-lead thyristor, a small current on its Gate lead controls the larger current of the Anode to Cathode path. In a two-lead thyristor, conduction begins when the potential difference between the Anode and Cathode themselves is sufficiently large (breakdown voltage). Some sources define silicon-controlled rectifier (SCR) and thyristor as synonymous. Other sources define thyristors as more complex devices that incorporate at least four layers of alternating N-type and P-type substrate. The first thyristor devices were ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Metal–oxide–semiconductor
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect transistor. The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925.Lilienfeld, Julius Edgar (1926-10-08) "Method and apparatus for controlling electric currents" upright=1.6, Two power MOSFETs in V_in_the_''off''_state,_and_can_conduct_a_continuous_current_of_30 surface-mount_packages._Operating_as_switches,_each_of_these_components_can_sus ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOSFET
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect transistor. The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925.Lilienfeld, Julius Edgar (1926-10-08) "Method and apparatus for controlling electric currents" upright=1.6, Two power MOSFETs in V_in_the_''off''_state,_and_can_conduct_a_continuous_current_of_30 surface-mount_packages._Operating_as_switches,_each_of_these_components_can_su ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Metal–oxide–semiconductor Field-effect Transistor
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect transistor. The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925.Lilienfeld, Julius Edgar (1926-10-08) "Method and apparatus for controlling electric currents" upright=1.6, Two power MOSFETs in V_in_the_''off''_state,_and_can_conduct_a_continuous_current_of_30 surface-mount_packages._Operating_as_switches,_each_of_these_components_can_sus ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOS-controlled Thyristor
An MOS-controlled thyristor (MCT) is a voltage-controlled fully controllable thyristor, controlled by MOSFETs (metal-oxide-semiconductor field-effect transistors). It was invented by V.A.K. Temple in 1984, and was principally similar to the earlier insulated-gate bipolar transistor (IGBT).V.A.K. Temple, "MOS-Controlled Thyristors, IEEE Electron Devices Meeting, Abstract 10.7, pp.282-285, 1984. MCTs are similar in operation to GTO thyristors, but have voltage controlled insulated gates. They have two MOSFETs of opposite conductivity types in their equivalent circuits. One is responsible for turn-on and the other for turn-off. A thyristor with only one MOSFET in its equivalent circuit, which can only be turned on (like normal SCRs), is called an MOS-gated thyristor. Positive voltage on the gate terminal with respect to the cathode turns the thyristor to the on state. Negative voltage on the gate terminal with respect to the anode, which is close to cathode voltage during the on ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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