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Hafnium(IV) Oxide
Hafnium(IV) oxide is the inorganic compound with the formula . Also known as hafnium dioxide or hafnia, this colourless solid is one of the most common and stable compounds of hafnium. It is an electrical insulator with a band gap of 5.3~5.7 eV. Hafnium dioxide is an intermediate in some processes that give hafnium metal. Hafnium(IV) oxide is quite inert. It reacts with strong acids such as concentrated sulfuric acid and with strong bases. It dissolves slowly in hydrofluoric acid to give fluorohafnate anions. At elevated temperatures, it reacts with chlorine in the presence of graphite or carbon tetrachloride to give hafnium tetrachloride. Structure Hafnia typically adopts the same structure as zirconia (ZrO2). Unlike TiO2, which features six-coordinate Ti in all phases, zirconia and hafnia consist of seven-coordinate metal centres. A variety of other crystalline phases have been experimentally observed, including cubic fluorite (Fmm), tetragonal (P42/nmc), monoclinic (P21/c) an ...
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Titanium(IV) Oxide
Titanium dioxide, also known as titanium(IV) oxide or titania , is the inorganic compound with the chemical formula . When used as a pigment, it is called titanium white, Pigment White 6 (PW6), or CI 77891. It is a white solid that is insoluble to water, although mineral forms can appear black. As a pigment, it has a wide range of applications, including paint, sunscreen, and food coloring. When used as a food coloring, it has E number E171. World production in 2014 exceeded 9 million tonnes. It has been estimated that titanium dioxide is used in two-thirds of all pigments, and pigments based on the oxide have been valued at a price of $13.2 billion. Structure In all three of its main dioxides, titanium exhibits octahedral geometry, being bonded to six oxide anions. The oxides in turn are bonded to three Ti centers. The overall crystal structure of rutile is tetragonal in symmetry whereas anatase and brookite are orthorhombic. The oxygen substructures are all slight distorti ...
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Titanium Dioxide
Titanium dioxide, also known as titanium(IV) oxide or titania , is the inorganic compound with the chemical formula . When used as a pigment, it is called titanium white, Pigment White 6 (PW6), or CI 77891. It is a white solid that is insoluble to water, although mineral forms can appear black. As a pigment, it has a wide range of applications, including paint, sunscreen, and food coloring. When used as a food coloring, it has E number E171. World production in 2014 exceeded 9 million tonnes. It has been estimated that titanium dioxide is used in two-thirds of all pigments, and pigments based on the oxide have been valued at a price of $13.2 billion. Structure In all three of its main dioxides, titanium exhibits octahedral geometry, being bonded to six oxide anions. The oxides in turn are bonded to three Ti centers. The overall crystal structure of rutile is tetragonal in symmetry whereas anatase and brookite are orthorhombic. The oxygen substructures are all slight distort ...
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Intel
Intel Corporation is an American multinational corporation and technology company headquartered in Santa Clara, California. It is the world's largest semiconductor chip manufacturer by revenue, and is one of the developers of the x86 series of instruction sets, the instruction sets found in most personal computers (PCs). Incorporated in Delaware, Intel ranked No. 45 in the 2020 ''Fortune'' 500 list of the largest United States corporations by total revenue for nearly a decade, from 2007 to 2016 fiscal years. Intel supplies microprocessors for computer system manufacturers such as Acer, Lenovo, HP, and Dell. Intel also manufactures motherboard chipsets, network interface controllers and integrated circuits, flash memory, graphics chips, embedded processors and other devices related to communications and computing. Intel (''int''egrated and ''el''ectronics) was founded on July 18, 1968, by semiconductor pioneers Gordon Moore (of Moore's law) and Robert Noyce ( ...
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Journal Of Materials Science
The ''Journal of Materials Science'' is a weekly peer-reviewed scientific journal covering all aspects of materials science. It was established in 1966 by Robert W. Cahn and is published by Springer Science+Business Media. The journal incorporated ''Journal of Materials Science Letters'' in 2003 and ''Interface Science'' in 2004. The Editor-in-Chief is C. Barry Carter (University of Connecticut). In 2012, the journal announced an annual "Cahn Prize" for best paper published in the journal, in honor of its founding editor. In 2021, the journal announced a similar annual "Bonfield Prize" for best review paper published in the journal, in honor of a former Editor-in-Chief, William Bonfield. There are two more specialized sister journals, '' Journal of Materials Science: Materials in Medicine'' and '' Journal of Materials Science: Materials in Electronics''. Abstracting and indexing The journal is abstracted and indexed in: According to the ''Journal Citation Reports'', the journal ...
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DRAM
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal-oxide-semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. The electric charge on the capacitors gradually leaks away; without intervention the data on the capacitor would soon be lost. To prevent this, DRAM requires an external ''memory refresh'' circuit which periodically rewrites the data in the capacitors, restoring them to their original charge. This refresh process is the defining characteristic of dynamic random-access memory, in contrast to static random-access memory (SRA ...
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High-κ Dielectric
The term high-κ dielectric refers to a material with a high dielectric constant (κ, kappa), as compared to silicon dioxide. High-κ dielectrics are used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric or another dielectric layer of a device. The implementation of high-κ gate dielectrics is one of several strategies developed to allow further miniaturization of microelectronic components, colloquially referred to as extending Moore's Law. Sometimes these materials are called "high-k" (pronounced "high kay"), instead of "high-κ" (high kappa). Need for high-κ materials Silicon dioxide () has been used as a gate oxide material for decades. As metal-oxide-semiconductor field-effect transistors (MOSFETs) have decreased in size, the thickness of the silicon dioxide gate dielectric has steadily decreased to increase the gate capacitance (per unit area) and thereby drive current (per device width), raising device perfor ...
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Optical Coating
An optical coating is one or more thin layers of material deposited on an optical component such as a lens, prism or mirror, which alters the way in which the optic reflects and transmits light. These coatings have become a key technology in the field of optics. One type of optical coating is an anti-reflective coating, which reduces unwanted reflections from surfaces, and is commonly used on spectacle and camera lenses. Another type is the high-reflector coating, which can be used to produce mirrors that reflect greater than 99.99% of the light that falls on them. More complex optical coatings exhibit high reflection over some range of wavelengths, and anti-reflection over another range, allowing the production of dichroic thin-film filters. Types of coating The simplest optical coatings are thin layers of metals, such as aluminium, which are deposited on glass substrates to make mirror surfaces, a process known as silvering. The metal used determines the reflection charac ...
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Hafnium Silicate
Hafnium silicate is the hafnium(IV) salt of silicic acid with the chemical formula of HfSiO4. Thin films of hafnium silicate and zirconium silicate grown by atomic layer deposition, chemical vapor deposition or MOCVD, can be used as a high-k dielectric as a replacement for silicon dioxide in modern semiconductor devices. The addition of silicon to hafnium oxide increases the band gap, while decreasing the dielectric constant. Furthermore, it increases the crystallization temperature of amorphous films and further increases the material's thermal stability with Si at high temperatures. Nitrogen is sometimes added to hafnium silicate for improving the thermal stability and electrical properties of devices. Natural occurrence Hafnon is the natural form of hafnium orthosilicate. Its name suggests the mineral is the Hf analogue of much more common zircon Zircon () is a mineral belonging to the group of nesosilicates and is a source of the metal zirconium. Its chemical name is zi ...
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Semiconductor
A semiconductor is a material which has an electrical resistivity and conductivity, electrical conductivity value falling between that of a electrical conductor, conductor, such as copper, and an insulator (electricity), insulator, such as glass. Its electrical resistivity and conductivity, resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities ("doping (semiconductor), doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created. The behavior of charge carriers, which include electrons, ions, and electron holes, at these junctions is the basis of diodes, transistors, and most modern electronics. Some examples of semiconductors are silicon, germanium, gallium arsenide, and elements near the so-called "metalloid staircase" on the periodic table. After silicon, gallium arsenide is the second-most common s ...
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Atomic Layer Deposition
Atomic layer deposition (ALD) is a thin-film deposition technique based on the sequential use of a gas-phase chemical process; it is a subclass of chemical vapour deposition. The majority of ALD reactions use two chemicals called precursors (also called "reactants"). These precursors react with the surface of a material one at a time in a sequential, self-limiting, manner. A thin film is slowly deposited through repeated exposure to separate precursors. ALD is a key process in fabricating semiconductor devices, and part of the set of tools for synthesising nanomaterials. Introduction During atomic layer deposition a film is grown on a substrate by exposing its surface to alternate gaseous species (typically referred to as precursors or reactants). In contrast to chemical vapor deposition, the precursors are never present simultaneously in the reactor, but they are inserted as a series of sequential, non-overlapping pulses. In each of these pulses the precursor molecules react wit ...
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Applied Physics Letters
''Applied Physics Letters'' is a weekly peer-reviewed scientific journal that is published by the American Institute of Physics. Its focus is rapid publication and dissemination of new experimental and theoretical papers regarding applications of physics in all disciplines of science, engineering, and modern technology. Additionally, there is an emphasis on fundamental and new developments which lay the groundwork for fields that are rapidly evolving.Home page
Applied Physics Letters. American Institute of Physics. 2016.
Overview
Applied Physics Letters. American Institute of Physics. 2016.
The journal was established in 1962. The