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DDR4
Double Data Rate 4 Synchronous Dynamic Random-Access Memory (DDR4 SDRAM) is a type of synchronous dynamic random-access memory with a high bandwidth ("double data rate") interface. Released to the market in 2014, it is a variant of dynamic random-access memory (DRAM), of which some have been in use since the early 1970s, and a higher-speed successor to the DDR2 and DDR3 technologies. DDR4 is not compatible with any earlier type of random-access memory (RAM) due to different signaling voltage and physical interface, besides other factors. DDR4 SDRAM was released to the public market in Q2 2014, focusing on ECC memory, while the non-ECC DDR4 modules became available in Q3 2014, accompanying the launch of Haswell-E processors that require DDR4 memory. Features The primary advantages of DDR4 over its predecessor, DDR3, include higher module density and lower voltage requirements, coupled with higher data rate transfer speeds. The DDR4 standard allows for DIMMs of up t ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Synchronous Dynamic Random-access Memory
Synchronous dynamic random-access memory (synchronous dynamic RAM or SDRAM) is any DRAM where the operation of its external pin interface is coordinated by an externally supplied clock signal. DRAM integrated circuits (ICs) produced from the early 1970s to early 1990s used an ''asynchronous'' interface, in which input control signals have a direct effect on internal functions only delayed by the trip across its semiconductor pathways. SDRAM has a ''synchronous'' interface, whereby changes on control inputs are recognised after a rising edge of its clock input. In SDRAM families standardized by JEDEC, the clock signal controls the stepping of an internal finite-state machine that responds to incoming commands. These commands can be pipelined to improve performance, with previously started operations completing while new commands are received. The memory is divided into several equally sized but independent sections called ''banks'', allowing the device to operate on a memory a ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Synchronous Dynamic Random-access Memory
Synchronous dynamic random-access memory (synchronous dynamic RAM or SDRAM) is any DRAM where the operation of its external pin interface is coordinated by an externally supplied clock signal. DRAM integrated circuits (ICs) produced from the early 1970s to early 1990s used an ''asynchronous'' interface, in which input control signals have a direct effect on internal functions only delayed by the trip across its semiconductor pathways. SDRAM has a ''synchronous'' interface, whereby changes on control inputs are recognised after a rising edge of its clock input. In SDRAM families standardized by JEDEC, the clock signal controls the stepping of an internal finite-state machine that responds to incoming commands. These commands can be pipelined to improve performance, with previously started operations completing while new commands are received. The memory is divided into several equally sized but independent sections called ''banks'', allowing the device to operate on a memory a ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Prefetch Buffer
Synchronous dynamic random-access memory (synchronous dynamic RAM or SDRAM) is any Dynamic RAM, DRAM where the operation of its external pin interface is coordinated by an externally supplied clock signal. DRAM integrated circuits (ICs) produced from the early 1970s to early 1990s used an ''asynchronous'' interface, in which input control signals have a direct effect on internal functions only delayed by the trip across its semiconductor pathways. SDRAM has a ''synchronous'' interface, whereby changes on control inputs are recognised after a rising edge of its clock input. In SDRAM families standardized by JEDEC, the clock signal controls the stepping of an internal finite-state machine that responds to incoming commands. These commands can be pipelined to improve performance, with previously started operations completing while new commands are received. The memory is divided into several equally sized but independent sections called ''Memory bank, banks'', allowing the device t ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
DDR5 SDRAM
Double Data Rate 5 Synchronous Dynamic Random-Access Memory (DDR5 SDRAM) is a type of synchronous dynamic random-access memory. Compared to its predecessor DDR4 SDRAM, DDR5 was planned to reduce power consumption, while doubling bandwidth. The standard, originally targeted for 2018, was released on July 14, 2020. A new feature called Decision Feedback Equalization (DFE) enables I/O speed scalability for higher bandwidth and performance improvement. DDR5 supports more bandwidth than its predecessor, DDR4, with 4.8 gigabits per second possible, but not shipping at launch. DDR5 has about the same latency as DDR4 and DDR3. DDR5 octuples the maximum DIMM capacity from 64 GB to 512 GB. DDR5 also has higher frequencies than DDR4. Rambus announced a working DDR5 DIMM in September 2017. On November 15, 2018, SK Hynix announced completion of its first DDR5 RAM chip; it runs at 5200 MT/s at 1.1 V. In February 2019, SK Hynix announced a 6400 MT/s chip, the highest speed specified by the ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
DIMM
A DIMM () (Dual In-line Memory Module), commonly called a RAM stick, comprises a series of dynamic random-access memory integrated circuits. These memory modules are mounted on a printed circuit board and designed for use in personal computers, workstations, printers, and servers. They are the predominant method for adding memory into a computer system. The vast majority of DIMMs are standardized through JEDEC standards, although there are proprietary DIMMs. DIMMs come in a variety of speeds and sizes, but generally are one of two lengths - PC which are and laptop (SO-DIMM) which are about half the size at . History DIMMs (Dual In-line Memory Module) were a 1990s upgrade for SIMMs (Single In-line Memory Modules) as Intel P5-based Pentium processors began to gain market share. The Pentium had a 64-bit bus width, which would require SIMMs installed in matched pairs in order to populate the data bus. The processor would then access the two SIMMs in parallel. DIMMs were i ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Haswell-E
Haswell is the List of Intel codenames, codename for a Central processing unit, processor microarchitecture developed by Intel as the "fourth-generation core" successor to the Ivy Bridge (microarchitecture), Ivy Bridge (which is a die shrink/Tick–tock model, tick of the Sandy Bridge, Sandy Bridge microarchitecture). Intel officially announced CPUs based on this microarchitecture on June 4, 2013, at Computex Taipei 2013, while a working Haswell chip was demonstrated at the 2011 Intel Developer Forum. With Haswell, which uses a 22 nanometer, 22 nm process, Intel also introduced low-power processors designed for convertible or "hybrid" ultrabooks, designated by the "U" suffix. Haswell CPUs are used in conjunction with the Intel 8 Series chipsets, Intel 9 Series chipsets, and Intel Xeon chipsets#Haswell-based Xeon chipsets, Intel C220 series chipsets. At least one Haswell-based processor is still being sold as of 2022, the Pentium G3420. Design The Haswell archite ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
DDR3L
Double Data Rate 3 Synchronous Dynamic Random-Access Memory (DDR3 SDRAM) is a type of synchronous dynamic random-access memory (SDRAM) with a high bandwidth ("double data rate") interface, and has been in use since 2007. It is the higher-speed successor to DDR and DDR2 and predecessor to DDR4 synchronous dynamic random-access memory (SDRAM) chips. DDR3 SDRAM is neither forward nor backward compatible with any earlier type of random-access memory (RAM) because of different signaling voltages, timings, and other factors. DDR3 is a DRAM interface specification. The actual DRAM arrays that store the data are similar to earlier types, with similar performance. The primary benefit of DDR3 SDRAM over its immediate predecessor DDR2 SDRAM, is its ability to transfer data at twice the rate (eight times the speed of its internal memory arrays), enabling higher bandwidth or peak data rates. The DDR3 standard permits DRAM chip capacities of up to 8 gigabits (Gbit), and up to four ranks o ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
DDR3 SDRAM
Double Data Rate 3 Synchronous Dynamic Random-Access Memory (DDR3 SDRAM) is a type of synchronous dynamic random-access memory (SDRAM) with a high bandwidth (" double data rate") interface, and has been in use since 2007. It is the higher-speed successor to DDR and DDR2 and predecessor to DDR4 synchronous dynamic random-access memory (SDRAM) chips. DDR3 SDRAM is neither forward nor backward compatible with any earlier type of random-access memory (RAM) because of different signaling voltages, timings, and other factors. DDR3 is a DRAM interface specification. The actual DRAM arrays that store the data are similar to earlier types, with similar performance. The primary benefit of DDR3 SDRAM over its immediate predecessor DDR2 SDRAM, is its ability to transfer data at twice the rate (eight times the speed of its internal memory arrays), enabling higher bandwidth or peak data rates. The DDR3 standard permits DRAM chip capacities of up to 8 gigabits (Gbit), and up to four ranks ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Double Data Rate
In computing, a computer bus operating with double data rate (DDR) transfers data on both the rising and falling edges of the clock signal. This is also known as double pumped, dual-pumped, and double transition. The term toggle mode is used in the context of NAND flash memory. Overview The simplest way to design a clocked electronic circuit is to make it perform one transfer per full cycle (rise and fall) of a clock signal. This, however, requires that the clock signal changes twice per transfer, while the data lines change at most once per transfer. When operating at a high bandwidth, signal integrity limitations constrain the clock frequency. By using both edges of the clock, the data signals operate with the same limiting frequency, thereby doubling the data transmission rate. This technique has been used for microprocessor front-side busses, Ultra-3 SCSI, expansion buses ( AGP, PCI-X), graphics memory (GDDR), main memory (both RDRAM and DDR1 through DDR5), and the ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
UDIMM
Registered (also called buffered) memory modules have a register between the DRAM modules and the system's memory controller. They place less electrical load on the memory controller and allow single systems to remain stable with more memory modules than they would have otherwise. When compared with registered memory, conventional memory is usually referred to as unbuffered memory or unregistered memory. When manufactured as a dual in-line memory module (DIMM), a registered memory module is called an RDIMM, while unregistered memory is called UDIMM or simply DIMM. Registered memory is often more expensive because of the lower number of units sold and additional circuitry required, so it is usually found only in applications where the need for scalability and robustness outweighs the need for a low price for example, registered memory is usually used in servers. Although most registered memory modules also feature error-correcting code memory (ECC), it is also possible for reg ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Kingston Technology
Kingston Technology Corporation is an American multinational computer technology corporation that develops, manufactures, sells and supports flash memory products, other computer-related memory products, as well as the HyperX gaming division (now owned by HP Inc., HP). Headquartered in Fountain Valley, California, United States, Kingston Technology employs more than 3,000 employees worldwide as of Q1 2016. The company has manufacturing and logistics facilities in the United States, United Kingdom, Ireland, Taiwan, and China. It is the largest independent producer of Dynamic random access memory, DRAM memory modules, owning approximately 68% of the third-party worldwide DRAM module market share in 2017, according to DRAMeXchange. In 2018 the company generated $7.5 billion in revenue and made #53 on the Forbes Lists of "America's Largest Private Companies 2019." Kingston serves an international network of distributors, resellers, retailers and OEM customers on six continents. T ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
ECC Memory
Error correction code memory (ECC memory) is a type of computer data storage that uses an error correction code (ECC) to detect and correct n-bit data corruption which occurs in memory. ECC memory is used in most computers where data corruption cannot be tolerated, like industrial control applications, critical databases, and infrastructural memory caches. Typically, ECC memory maintains a memory system immune to single-bit errors: the data that is read from each word is always the same as the data that had been written to it, even if one of the bits actually stored has been flipped to the wrong state. Most non-ECC memory cannot detect errors, although some non-ECC memory with parity support allows detection but not correction. Description Error correction codes protect against undetected data corruption and are used in computers where such corruption is unacceptable, examples being scientific and financial computing applications, or in database and file servers. ECC can als ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
