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Carbon Nanotubes In Interconnects
In nanotechnology, carbon nanotube interconnects refer to the proposed use of carbon nanotubes in the interconnects between the elements of an integrated circuit. Carbon nanotubes (CNTs) can be thought of as single atomic layer graphite sheets rolled up to form seamless cylinders. Depending on the direction on which they are rolled, CNTs can be semiconducting or metallic. Metallic carbon nanotubes have been identified as a possible interconnect material for the future technology generations and to replace copper interconnects. Electron transport can go over long nanotube lengths, 1 μm, enabling CNTs to carry very high currents (i.e. up to a current density of 109 A∙ cm−2) with essentially no heating due to nearly one dimensional electronic structure. Despite the current saturation in CNTs at high fields, the mitigation of such effects is possible due to encapsulated nanowires. Carbon nanotubes for interconnects application in Integrated chips have been studied since 2001, ho ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Nanotechnology
Nanotechnology, also shortened to nanotech, is the use of matter on an atomic, molecular, and supramolecular scale for industrial purposes. The earliest, widespread description of nanotechnology referred to the particular technological goal of precisely manipulating atoms and molecules for fabrication of macroscale products, also now referred to as molecular nanotechnology. A more generalized description of nanotechnology was subsequently established by the National Nanotechnology Initiative, which defined nanotechnology as the manipulation of matter with at least one dimension sized from 1 to 100 nanometers (nm). This definition reflects the fact that quantum mechanical effects are important at this quantum-realm scale, and so the definition shifted from a particular technological goal to a research category inclusive of all types of research and technologies that deal with the special properties of matter which occur below the given size threshold. It is therefore common to ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Titanium Nitride
Titanium nitride (TiN; sometimes known as Tinite) is an extremely hard ceramic material, often used as a physical vapor deposition (PVD) coating on titanium alloys, steel, carbide, and aluminium components to improve the substrate's surface properties. Applied as a thin coating, TiN is used to harden and protect cutting and sliding surfaces, for decorative purposes (due to its golden appearance), and as a non-toxic exterior for medical implants. In most applications a coating of less than is applied. Characteristics TiN has a Vickers hardness of 1800–2100, a modulus of elasticity of 251 GPa, a thermal expansion coefficient of 9.35 K−1, and a superconducting transition temperature of 5.6 K. TiN will oxidize at 800 °C in a normal atmosphere. TiN has a brown color, and appears gold when applied as a coating. It is chemically stable at 20 °C, according to laboratory tests, but can be slowly attacked by concentrated acid solutions with rising temperat ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Scanning Thermal Microscopy
Scanning thermal microscopy (SThM) is a type of scanning probe microscopy that maps the local temperature and thermal conductivity of an interface. The probe in a scanning thermal microscope is sensitive to local temperatures – providing a nano-scale thermometer. Thermal measurements at the nanometer scale are of both scientific and industrial interest. The technique was invented by Clayton C. Williams and H. Kumar Wickramasinghe in 1986. Applications SThM allows thermal measurements at the nano-scale. These measurements can include: temperature, thermal properties of materials, thermal conductivity, heat capacity, glass transition temperature, latent heat, enthalpy, etc. The applications include: *Ultra large-scale integration (ULSI) lithography research and cellular diagnostics in biochemistry. *Detecting such parameters as phase changes in polymer blends. *Joule heating *Measuring material variations in semiconductor devices *Subsurface imaging *Near-field photo thermal mic ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Scanning Thermal Microscopy
Scanning thermal microscopy (SThM) is a type of scanning probe microscopy that maps the local temperature and thermal conductivity of an interface. The probe in a scanning thermal microscope is sensitive to local temperatures – providing a nano-scale thermometer. Thermal measurements at the nanometer scale are of both scientific and industrial interest. The technique was invented by Clayton C. Williams and H. Kumar Wickramasinghe in 1986. Applications SThM allows thermal measurements at the nano-scale. These measurements can include: temperature, thermal properties of materials, thermal conductivity, heat capacity, glass transition temperature, latent heat, enthalpy, etc. The applications include: *Ultra large-scale integration (ULSI) lithography research and cellular diagnostics in biochemistry. *Detecting such parameters as phase changes in polymer blends. *Joule heating *Measuring material variations in semiconductor devices *Subsurface imaging *Near-field photo thermal mic ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electron Energy Loss Spectroscopy
In electron energy loss spectroscopy (EELS) a material is exposed to a beam of electrons with a known, narrow range of kinetic energies. Some of the electrons will undergo inelastic scattering, which means that they lose energy and have their paths slightly and randomly deflected. The amount of energy loss can be measured via an electron spectrometer and interpreted in terms of what caused the energy loss. Inelastic interactions include phonon excitations, inter- and intra-band transitions, plasmon excitations, inner shell ionizations, and Cherenkov radiation. The inner-shell ionizations are particularly useful for detecting the elemental components of a material. For example, one might find that a larger-than-expected number of electrons comes through the material with 285 eV less energy than they had when they entered the material. This is approximately the amount of energy needed to remove an inner-shell electron from a carbon atom, which can be taken as evidence ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Raman Spectroscopy
Raman spectroscopy () (named after Indian physicist C. V. Raman) is a spectroscopic technique typically used to determine vibrational modes of molecules, although rotational and other low-frequency modes of systems may also be observed. Raman spectroscopy is commonly used in chemistry to provide a structural fingerprint by which molecules can be identified. Raman spectroscopy relies upon inelastic scattering of photons, known as Raman scattering. A source of monochromatic light, usually from a laser in the visible, near infrared, or near ultraviolet range is used, although X-rays can also be used. The laser light interacts with molecular vibrations, phonons or other excitations in the system, resulting in the energy of the laser photons being shifted up or down. The shift in energy gives information about the vibrational modes in the system. Infrared spectroscopy typically yields similar yet complementary information. Typically, a sample is illuminated with a laser beam. Electr ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
CMOS
Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss", ) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including CMOS BIOS), and other digital logic circuits. CMOS technology is also used for analog circuits such as image sensors (CMOS sensors), data converters, RF circuits (RF CMOS), and highly integrated transceivers for many types of communication. The CMOS process was originally conceived by Frank Wanlass at Fairchild Semiconductor and presented by Wanlass and Chih-Tang Sah at the International Solid-State Circuits Conference in 1963. Wanlass later filed US patent 3,356,858 for CMOS circuitry and it was granted in 1967. commercialized the technology with the trademark "COS-MO ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Anode
An anode is an electrode of a polarized electrical device through which conventional current enters the device. This contrasts with a cathode, an electrode of the device through which conventional current leaves the device. A common mnemonic is ACID, for "anode current into device". The direction of conventional current (the flow of positive charges) in a circuit is opposite to the direction of electron flow, so (negatively charged) electrons flow out the anode of a galvanic cell, into an outside or external circuit connected to the cell. For example, the end of a household battery marked with a "-" (minus) is the anode. In both a galvanic cell and an electrolytic cell, the anode is the electrode at which the oxidation reaction occurs. In a galvanic cell the anode is the wire or plate having excess negative charge as a result of the oxidation reaction. In an electrolytic cell, the anode is the wire or plate upon which excess positive charge is imposed. As a result of this, anion ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Thermal Conductivity
The thermal conductivity of a material is a measure of its ability to conduct heat. It is commonly denoted by k, \lambda, or \kappa. Heat transfer occurs at a lower rate in materials of low thermal conductivity than in materials of high thermal conductivity. For instance, metals typically have high thermal conductivity and are very efficient at conducting heat, while the opposite is true for insulating materials like Rockwool or Styrofoam. Correspondingly, materials of high thermal conductivity are widely used in heat sink applications, and materials of low thermal conductivity are used as thermal insulation. The reciprocal of thermal conductivity is called thermal resistivity. The defining equation for thermal conductivity is \mathbf = - k \nabla T, where \mathbf is the heat flux, k is the thermal conductivity, and \nabla T is the temperature gradient. This is known as Fourier's Law for heat conduction. Although commonly expressed as a scalar, the most general form of th ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Ampacity
Ampacity is a portmanteau for ''ampere capacity'' defined by National Electrical Codes, in some North American countries. Ampacity is defined as the maximum current, in amperes, that a conductor can carry continuously under the conditions of use without exceeding its temperature rating. Also described as current-carrying capacity. The ampacity of a conductor depends on its ability to dissipate heat without damage to the conductor or its insulation. This is a function of the insulation temperature rating, the electrical resistance of the conductor material, the ambient temperature, and the ability of the insulated conductor to dissipate heat to the surrounds. All common electrical conductors have some resistance to the flow of electricity. Electric current flowing through them causes voltage drop and power dissipation, which heats conductors. Copper or aluminum can conduct a large amount of current without damage, but long before conductor damage, insulation would, typically, b ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Grain Boundary
In materials science, a grain boundary is the interface between two grains, or crystallites, in a polycrystalline material. Grain boundaries are two-dimensional defects in the crystal structure, and tend to decrease the electrical and thermal conductivity of the material. Most grain boundaries are preferred sites for the onset of corrosion and for the precipitation of new phases from the solid. They are also important to many of the mechanisms of creep. On the other hand, grain boundaries disrupt the motion of dislocations through a material, so reducing crystallite size is a common way to improve mechanical strength, as described by the Hall–Petch relationship. High and low angle boundaries It is convenient to categorize grain boundaries according to the extent of misorientation between the two grains. ''Low-angle grain boundaries'' (''LAGB'') or ''subgrain boundaries'' are those with a misorientation less than about 15 degrees. Generally speaking they are composed of a ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electromigration
Electromigration is the transport of material caused by the gradual movement of the ions in a conductor due to the momentum transfer between conducting electrons and diffusing metal atoms. The effect is important in applications where high direct current densities are used, such as in microelectronics and related structures. As the structure size in electronics such as integrated circuits (ICs) decreases, the practical significance of this effect increases. History The phenomenon of electromigration has been known for over 100 years, having been discovered by the French scientist Gerardin. The topic first became of practical interest during the late 1960s when packaged ICs first appeared. The earliest commercially available ICs failed in a mere three weeks of use from runaway electromigration, which led to a major industry effort to correct this problem. The first observation of electromigration in thin films was made by I. Blech.I. Blech: ''Electromigration in Thin Aluminum Fi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
