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BS170
The 2N7000 and BS170 are two different N-channel, enhancement-mode MOSFETs used for low-power switching applications, with different lead arrangements and current ratings. They are sometimes listed together on the same datasheet with other variants 2N7002, VQ1000J, and VQ1000P. The 2N7000 is a widely available and popular part, often recommended as useful and common components to have around for hobbyist use. The BS250P is "a good p-channel analog of the 2N7000." Packaged in a TO-92 enclosure, both the 2N7000 and BS170 are 60 V devices. The 2N7000 can switch 200 mA. The BS170 can switch 500 mA, with a maximum on-resistance of 5 Ω at 10 V Vgs. The 2N7002 is a similar part with the same electrical characteristics as the 2N7000 but different package. The 2N7002 is in a TO-236 package, also known as "small outline transistor" SOT-23 surface-mount Surface-mount technology (SMT), originally called planar mounting, is a method in which the electrical components are moun ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Transistor
upright=1.4, gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (pink). A transistor is a semiconductor device used to Electronic amplifier, amplify or electronic switch, switch electrical signals and electrical power, power. The transistor is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more are found embedded in integrated circuits. Austro-Hungarian physicist Julius Edgar Lilienfeld proposed the concept of a field-effect transistor in 1926, but it was not possible to actually constru ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
TO-92
The TO-92 is a widely used style of semiconductor package mainly used for transistors. The case is often made of epoxy or plastic, and offers compact size at a very low cost. History and origin The JEDEC TO-92 descriptor is derived from the original full name for the package: Transistor Outline Package, Case Style 92. The package is also known by the designation SOT54. By 1966 the package was being used by Motorola for their 2N3904 devices among others. Construction and orientation The case is molded around the transistor elements in two parts; the face is flat, usually bearing a machine-printed part number (some early examples had the part number printed on the top surface instead). The back is semi-circularly-shaped. A line of moulding flash from the injection-moulding process can be seen around the case. The leads protrude from the bottom of the case. When looking at the face of the transistor, the leads are commonly configured from left-to-right as the ''emitter'', ''ba ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
JEDEC Standards
The JEDEC Solid State Technology Association is an independent semiconductor engineering trade organization and standardization body headquartered in Arlington County, Virginia, United States. JEDEC has over 300 members, including some of the world's largest computer companies. Its scope and past activities includes standardization of part numbers, defining an electrostatic discharge (ESD) standard, and leadership in the lead-free manufacturing transition. The origin of JEDEC traces back to 1944, when RMA (subsequently renamed EIA) and NEMA established the Joint Electron Tube Engineering Council (JETEC) to coordinate vacuum tube type numberings. In 1958, with the advent of semiconductor technology, the joint JETEC-activity of EIA and NEMA was renamed into Joint Electron Device Engineering Council. NEMA discontinued its involvement in 1979. In the fall of 1999, JEDEC became a separate trade association under the current name, but maintained an EIA alliance, until EIA ceased o ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Bipolar Junction Transistor
A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor, uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current flowing between the terminals, making the device capable of amplification or switching. BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material. The junctions can be made in several different ways, such as changing the doping of the semiconductor material as it is grown, by depositing metal pellets to form alloy junctions, or by such methods as diffusion of n-type and p-type doping substances into the crystal. The superior predictability and performance of junction transistors quickly displaced the original point-contact transistor. Diffused transistors, along wi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Darlington Transistor
In electronics, a multi-transistor configuration called the Darlington configuration (commonly called a Darlington pair) is a circuit consisting of two bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is amplified further by the second one. The collectors of both transistors are connected together. This configuration has a much higher current gain than each transistor taken separately. It acts like and is often packaged as a single transistor. It was invented in 1953 by Sidney Darlington. Behavior A Darlington pair behaves like a single transistor, meaning it has one base, collector, and emitter. It typically creates a high current gain (approximately the product of the gains of the two transistors, due to the fact that their β values multiply together). A general relation between the compound current gain and the individual gains is given by: :\beta_\mathrm = \beta_1 \cdot \ ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Modern Electronics
''Modern Electronics'' was a hobbyist magazine published from October 1984 to March 1991. It became ''Computer Craft'' in April 1991 and the name changed again to ''MicroComputer Journal'' in January 1994. Modern Electronics, Inc. was owned by CQ Communications, Inc, the publishers of ''CQ Amateur Radio''. Art Salsberg was Editor-in-Chief and Alexander W. Burawa was the Managing Editor. The contributing editors included Len Feldman, Glenn Hauser, Forrest Mims and Don Lancaster. Many members of the editorial staff had previously worked for ''Popular Electronics'' but left when that magazine was changed to ''Computers & Electronics''. Here is how Art Salsberg described the new magazine. Many of you probably know of me from my decade-long stewardship of Popular Electronics magazine, which changed its name and editorial philosophy last year to distance itself from active electronics enthusiasts who move fluidly across electronics and computer product areas. In a sense, then, Modern ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Surface-mount Technology
Surface-mount technology (SMT), originally called planar mounting, is a method in which the electrical components are mounted directly onto the surface of a printed circuit board (PCB). An electrical component mounted in this manner is referred to as a surface-mount device (SMD). In industry, this approach has largely replaced the through-hole technology construction method of fitting components, in large part because SMT allows for increased manufacturing automation which reduces cost and improves quality. It also allows for more components to fit on a given area of substrate. Both technologies can be used on the same board, with the through-hole technology often used for components not suitable for surface mounting such as large transformers and heat-sinked power semiconductors. An SMT component is usually smaller than its through-hole counterpart because it has either smaller leads or no leads at all. It may have short pins or leads of various styles, flat contacts, a matrix ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Ampere
The ampere (, ; symbol: A), often shortened to amp,SI supports only the use of symbols and deprecates the use of abbreviations for units. is the unit of electric current in the International System of Units (SI). One ampere is equal to electrons worth of charge moving past a point in a second. It is named after French mathematician and physicist André-Marie Ampère (1775–1836), considered the father of electromagnetism along with Danish physicist Hans Christian Ørsted. As of the 2019 redefinition of the SI base units, the ampere is defined by fixing the elementary charge to be exactly C ( coulomb), which means an ampere is an electrical current equivalent to elementary charges moving every seconds or elementary charges moving in a second. Prior to the redefinition the ampere was defined as the current that would need to be passed through 2 parallel wires 1 metre apart to produce a magnetic force of newtons per metre. The earlier CGS system had two definitio ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOSFET
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect transistor. The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925.Lilienfeld, Julius Edgar (1926-10-08) "Method and apparatus for controlling electric currents" upright=1.6, Two power MOSFETs in V_in_the_''off''_state,_and_can_conduct_a_continuous_current_of_30 surface-mount_packages._Operating_as_switches,_each_of_these_components_can_su ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Volt
The volt (symbol: V) is the unit of electric potential, electric potential difference (voltage), and electromotive force in the International System of Units (SI). It is named after the Italian physicist Alessandro Volta (1745–1827). Definition One volt is defined as the electric potential between two points of a conducting wire when an electric current of one ampere dissipates one watt of power between those points. Equivalently, it is the potential difference between two points that will impart one joule of energy per coulomb of charge that passes through it. It can be expressed in terms of SI base units ( m, kg, second, s, and ampere, A) as : \text = \frac = \frac = \frac. It can also be expressed as amperes times ohms (current times resistance, Ohm's law), webers per second (magnetic flux per time), watts per ampere (power per current), or joules per coulomb (energy per charge), which is also equivalent to electronvolts per elementary charge: : \text = \tex ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Field-effect Transistor
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: ''source'', ''gate'', and ''drain''. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use either electrons (n-channel) or holes (p-channel) as charge carriers in their operation, but not both. Many different types of field effect transistors exist. Field effect transistors generally display very high input impedance at low frequencies. The most widely used field-effect transistor is the MOSFET (metal-oxide-semiconductor field-effect transistor). History The concept of a field-effect transistor (FET) was first patented by Austro-Hungarian physicist Julius Edgar Lilienfeld in 192 ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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