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BJT
A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor, uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current flowing between the terminals, making the device capable of amplification or switching. BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material. The junctions can be made in several different ways, such as changing the doping of the semiconductor material as it is grown, by depositing metal pellets to form alloy junctions, or by such methods as diffusion of n-type and p-type doping substances into the crystal. The superior predictability and performance of junction transistors quickly displaced the original point-contact transistor. Diffused transistors, along wit ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Collector (electronics)
upright=1.4, gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (pink). A transistor is a semiconductor device used to Electronic amplifier, amplify or electronic switch, switch electrical signals and electrical power, power. The transistor is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more are found embedded in integrated circuits. Austro-Hungarian physicist Julius Edgar Lilienfeld proposed the concept of a field-effect transistor in 1926, but it was not possible to actually construct ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Transistor
upright=1.4, gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (pink). A transistor is a semiconductor device used to Electronic amplifier, amplify or electronic switch, switch electrical signals and electrical power, power. The transistor is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more are found embedded in integrated circuits. Austro-Hungarian physicist Julius Edgar Lilienfeld proposed the concept of a field-effect transistor in 1926, but it was not possible to actually constru ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Field-effect Transistor
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: ''source'', ''gate'', and ''drain''. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use either electrons (n-channel) or holes (p-channel) as charge carriers in their operation, but not both. Many different types of field effect transistors exist. Field effect transistors generally display very high input impedance at low frequencies. The most widely used field-effect transistor is the MOSFET (metal-oxide-semiconductor field-effect transistor). History The concept of a field-effect transistor (FET) was first patented by Austro-Hungarian physicist Julius Edgar Lilienfeld in 192 ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
BiCMOS
Bipolar CMOS (BiCMOS) is a semiconductor technology that integrates two semiconductor technologies, those of the bipolar junction transistor and the CMOS (complementary metal-oxide-semiconductor) logic gate, into a single integrated circuit. In more recent times the bipolar processes have been extended to include high mobility devices using silicon–germanium junctions. Bipolar transistors offer high speed, high gain, and low output impedance with relatively high power consumption per device, which are excellent properties for high-frequency analog amplifiers including low noise radio frequency (RF) amplifiers that only use a few active devices, while CMOS technology offers high input impedance and is excellent for constructing large numbers of low-power logic gates. In a BiCMOS process the doping profile and other process features may be tilted to favour either the CMOS or the bipolar devices. For example GlobalFoundries offer a basic 180 nm BiCMOS7WL process and several ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Amplifier
An amplifier, electronic amplifier or (informally) amp is an electronic device that can increase the magnitude of a signal (a time-varying voltage or current). It may increase the power significantly, or its main effect may be to boost the voltage or current (power, voltage or current amplifier). It is a two-port electronic circuit that uses electric power from a power supply to increase the amplitude of a signal applied to its input terminals, producing a greater amplitude signal at its output. The ratio of output to input voltage, current, or power is termed gain (voltage, current, or power gain). An amplifier, by definition has gain greater than unity (if the gain is less than unity, the device is an attenuator). An amplifier can either be a separate piece of equipment or an electrical circuit contained within another device. Amplification is fundamental to modern electronics, and amplifiers are widely used in almost all electronic equipment. Amplifiers can be categorize ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
TO-92
The TO-92 is a widely used style of semiconductor package mainly used for transistors. The case is often made of epoxy or plastic, and offers compact size at a very low cost. History and origin The JEDEC TO-92 descriptor is derived from the original full name for the package: Transistor Outline Package, Case Style 92. The package is also known by the designation SOT54. By 1966 the package was being used by Motorola for their 2N3904 devices among others. Construction and orientation The case is molded around the transistor elements in two parts; the face is flat, usually bearing a machine-printed part number (some early examples had the part number printed on the top surface instead). The back is semi-circularly-shaped. A line of moulding flash from the injection-moulding process can be seen around the case. The leads protrude from the bottom of the case. When looking at the face of the transistor, the leads are commonly configured from left-to-right as the ''emitter'', ''ba ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
IEEE 315-1975 (1993) 8
An electronic symbol is a pictogram used to represent various electrical and electronic devices or functions, such as wires, batteries, resistors, and transistors, in a schematic diagram of an electrical or electronic circuit. These symbols are largely standardized internationally today, but may vary from country to country, or engineering discipline, based on traditional conventions. Standards for symbols The graphic symbols used for electrical components in circuit diagram A circuit diagram (wiring diagram, electrical diagram, elementary diagram, electronic schematic) is a graphical representation of an electrical circuit. A pictorial circuit diagram uses simple images of components, while a schematic diagram s ...s are covered by national and international standards, in particular: * International Electrotechnical Commission, IEC 60617 (also known as British Standard, BS 3939). * There is also IEC 61131-3 – for ladder-logic symbols. * Joint industrial council, JIC JIC ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Point-contact Transistor
The point-contact transistor was the first type of transistor to be successfully demonstrated. It was developed by research scientists John Bardeen and Walter Brattain at Bell Laboratories in December 1947. They worked in a group led by physicist William Shockley. The group had been working together on experiments and theories of electric field effects in solid state materials, with the aim of replacing vacuum tubes with a smaller device that consumed less power. The critical experiment, carried out on December 16, 1947, consisted of a block of germanium, a semiconductor, with two very closely spaced gold contacts held against it by a spring. Brattain attached a small strip of gold foil over the point of a plastic triangle — a configuration which is essentially a point-contact diode. He then carefully sliced through the gold at the tip of the triangle. This produced two electrically isolated gold contacts very close to each other. The piece of germanium used had a surface l ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
TO-3
In electronics, TO-3 is a designation for a standardized metal semiconductor package used for power semiconductors, including transistors, silicon controlled rectifiers, and, integrated circuits. ''TO'' stands for "Transistor Outline" and relates to a series of technical drawings produced by JEDEC. The TO-3 case has a flat surface which can be attached to a heatsink, normally via a thermally conductive but electrically insulating washer. The design originated at Motorola around 1955 from a group headed by Virgil E. Bottom, Dr. Virgil E. Bottom. who was director of research of the Motorola Semiconductor Division. The first use of this design was for the germanium alloy-junction transistor, alloy-junction power transistor 2N176 – the first power transistor to be put into quantity production. The lead spacing was originally intended to allow plugging the device into a then-common tube socket. Typical applications The metal package can be attached to a heat sink, making it suitable ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
P–n Junction
A p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor. The "p" (positive) side contains an excess of holes, while the "n" (negative) side contains an excess of electrons in the outer shells of the electrically neutral atoms there. This allows electrical current to pass through the junction only in one direction. The p-n junction is created by doping, for example by ion implantation, diffusion of dopants, or by epitaxy (growing a layer of crystal doped with one type of dopant on top of a layer of crystal doped with another type of dopant). If two separate pieces of material were used, this would introduce a grain boundary between the semiconductors that would severely inhibit its utility by scattering the electrons and holes. p–n junctions are elementary "building blocks" of semiconductor electronic devices such as diodes, transistors, solar cells, light-emitting diodes (LEDs) ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
TO-126
TO-126 is a type of semiconductor package for devices with three pins, such as transistors. The package is rectangular with a hole in the middle to allow for easy mounting to a board or a heat sink. On one side of the package typically a metal sheet is exposed, with the transistor die bonded to the other side of the metal sheet inside the package. This allows for an efficient heat transfer from the transistor die to an external heat sink but also implies that the metal sheet is electrically connected to the die (for a bipolar junction transistor usually the collector is connected to this metal sheet). History and origin The JEDEC TO-126 descriptor is derived from the original full name for the package: Transistor Outline Package, Case Style 126. In the updated JEDEC outline system, the package is numbered as TO-225AA. STMicroelectronics refers to this package style as SOT-32. National Standards } , - , Rosstandart , GOST R 57439—2017 , - , rowspan=2, Kombinat Mikroelektronik ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
P–n Junction
A p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor. The "p" (positive) side contains an excess of holes, while the "n" (negative) side contains an excess of electrons in the outer shells of the electrically neutral atoms there. This allows electrical current to pass through the junction only in one direction. The p-n junction is created by doping, for example by ion implantation, diffusion of dopants, or by epitaxy (growing a layer of crystal doped with one type of dopant on top of a layer of crystal doped with another type of dopant). If two separate pieces of material were used, this would introduce a grain boundary between the semiconductors that would severely inhibit its utility by scattering the electrons and holes. p–n junctions are elementary "building blocks" of semiconductor electronic devices such as diodes, transistors, solar cells, light-emitting diodes (LEDs) ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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