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Baker Clamp
Baker clamp is a generic name for a class of electronic circuits that reduce the storage time of a switching bipolar junction transistor (BJT) by applying a nonlinear negative feedback through various kinds of diodes. The reason for slow turn-off times of saturated BJTs is the stored charge in the base. It must be removed before the transistor will turn off since the storage time is a limiting factor of using bipolar transistors and IGBTs in fast switching applications. The diode-based Baker clamps prevent the transistor from saturating and thereby accumulating a lot of stored charge. Origin The Baker clamp is named after Richard H. Baker, who described it in his 1956 technical report "Maximum Efficiency Transistor Switching Circuits". Baker called the technique "back clamping", but the circuit is now called a Baker clamp. Many sources credit Baker's report for the two-diode clamp circuit. Also in 1956, Baker described the circuit in a patent application; the 1961 issued pa ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Bipolar Junction Transistor
A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor, uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current flowing between the terminals, making the device capable of amplification or switching. BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material. The junctions can be made in several different ways, such as changing the doping of the semiconductor material as it is grown, by depositing metal pellets to form alloy junctions, or by such methods as diffusion of n-type and p-type doping substances into the crystal. The superior predictability and performance of junction transistors quickly displaced the original point-contact transistor. Diffused transistors, along wi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Negative Feedback
Negative feedback (or balancing feedback) occurs when some function (Mathematics), function of the output of a system, process, or mechanism is feedback, fed back in a manner that tends to reduce the fluctuations in the output, whether caused by changes in the input or by other disturbances. Whereas positive feedback tends to lead to instability via exponential growth, oscillation or chaos theory, chaotic behavior, negative feedback generally promotes stability. Negative feedback tends to promote a settling to List of types of equilibrium, equilibrium, and reduces the effects of perturbations. Negative feedback loops in which just the right amount of correction is applied with optimum timing can be very stable, accurate, and responsive. Negative feedback is widely used in mechanical and electronic engineering, and also within living organisms, and can be seen in many other fields from chemistry and economics to physical systems such as the climate. General negative feedback ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Diode
A diode is a two-terminal electronic component that conducts current primarily in one direction (asymmetric conductance); it has low (ideally zero) resistance in one direction, and high (ideally infinite) resistance in the other. A diode vacuum tube or thermionic diode is a vacuum tube with two electrodes, a heated cathode and a plate, in which electrons can flow in only one direction, from cathode to plate. A semiconductor diode, the most commonly used type today, is a crystalline piece of semiconductor material with a p–n junction connected to two electrical terminals. Semiconductor diodes were the first semiconductor electronic devices. The discovery of asymmetric electrical conduction across the contact between a crystalline mineral and a metal was made by German physicist Ferdinand Braun in 1874. Today, most diodes are made of silicon, but other semiconducting materials such as gallium arsenide and germanium are also used. Among many uses, diodes are found in ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
IGBT
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch, which, as it was developed, came to combine high efficiency and fast switching. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure. Although the structure of the IGBT is topologically the same as a thyristor with a "MOS" gate ( MOS-gate thyristor), the thyristor action is completely suppressed, and only the transistor action is permitted in the entire device operation range. It is used in switching power supplies in high-power applications: variable-frequency drives (VFDs), electric cars, trains, variable-speed refrigerators, lamp ballasts, arc-welding machines, induction hobs, and air conditioners. Since it is designed to turn on and off rapidly, the IGBT can synthesize complex waveforms with pulse-width modulation and low-pass filters, so it is also used in switching a ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Baker Clamp
Baker clamp is a generic name for a class of electronic circuits that reduce the storage time of a switching bipolar junction transistor (BJT) by applying a nonlinear negative feedback through various kinds of diodes. The reason for slow turn-off times of saturated BJTs is the stored charge in the base. It must be removed before the transistor will turn off since the storage time is a limiting factor of using bipolar transistors and IGBTs in fast switching applications. The diode-based Baker clamps prevent the transistor from saturating and thereby accumulating a lot of stored charge. Origin The Baker clamp is named after Richard H. Baker, who described it in his 1956 technical report "Maximum Efficiency Transistor Switching Circuits". Baker called the technique "back clamping", but the circuit is now called a Baker clamp. Many sources credit Baker's report for the two-diode clamp circuit. Also in 1956, Baker described the circuit in a patent application; the 1961 issued pa ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Schottky Diode
The Schottky diode (named after the German physicist Walter H. Schottky), also known as Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action. The cat's-whisker detectors used in the early days of wireless and metal rectifiers used in early power applications can be considered primitive Schottky diodes. When sufficient forward voltage is applied, a current flows in the forward direction. A silicon p–n diode has a typical forward voltage of 600–700 mV, while the Schottky's forward voltage is 150–450 mV. This lower forward voltage requirement allows higher switching speeds and better system efficiency. History Walter H. Schottky (1886–1976) in 1914, discovered an irregularity in the emission of thermions in a vacuum tube, now known as the Schottky effect. Construction A metal–semiconductor junction is formed between a metal ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Schottky Transistor
A Schottky transistor is a combination of a transistor and a Schottky diode that prevents the transistor from saturating by diverting the excessive input current. It is also called a Schottky-clamped transistor. Mechanism Standard transistor-transistor logic (TTL) uses transistors as saturated switches. A saturated transistor is turned on hard, which means it has a lot more base drive than it needs for the collector current it is drawing. The extra base drive creates a stored charge in the base of the transistor. The stored charge causes problems when the transistor needs to be switched from on to off: while the charge is present, the transistor is on; all the charge must be removed before the transistor will turn off. Removing the charge takes time (called storage time), so the result of saturation is a delay between the applied turn-off input at the base and the voltage swing at the collector. Storage time accounts for a significant portion of the propagation delay in the o ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Paul Horowitz
Paul Horowitz (born 1942) is an American physicist and electrical engineer, known primarily for his work in electronics design, as well as for his role in the search for extraterrestrial intelligence (see SETI). Biography At age 8, Horowitz achieved distinction as the world's youngest amateur radio operator. He went on to study physics at Harvard University (B.A., 1965; M.A., 1967; Ph.D., 1970), where he has also spent all of his subsequent career. His early work was on scanning microscopy (using both protons and X-rays). Horowitz has also conducted astrophysical research on pulsars and investigations in biophysics. His interest in practical electronics has led to a handful of inventions, including an automated voting machine and an acoustic mechanism for landmine detection, and an electronic Morse Code/Baudot code keyboard using a diode matrix and 66 TTL integrated circuits for Amateur Radio use. Since 1974 he has taught a practical course in electronics whose lecture no ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Winfield Hill
Winfield Hill is the Director of the Electronics Engineering Laboratory at the Rowland Institute at Harvard University. A self-proclaimed "electronics circuit-design guru" and trained physicist and electronic engineer, he co-authored the popular text ''The Art of Electronics ''The Art of Electronics'', by Paul Horowitz and Winfield Hill, is a popular reference textbook dealing with analog and digital electronics. The first edition was published in 1980, and the 1989 second edition has been regularly reprinted. The ...'' with Harvard Physicist Paul Horowitz. Engineering work by Hill in the late 1970s at Harvard led him to found the Sea Data Corporation, which designed instruments for deep-sea oceanography. References #Winfield Hill's Electronics/Engineering Home Page External linksWinfield Hill The Rowland Institute at Harvard 21st-century American engineers Harvard University faculty Living people Year of birth missing (living people) Place of birth missing (livin ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Darlington Transistor
In electronics, a multi-transistor configuration called the Darlington configuration (commonly called a Darlington pair) is a circuit consisting of two bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is amplified further by the second one. The collectors of both transistors are connected together. This configuration has a much higher current gain than each transistor taken separately. It acts like and is often packaged as a single transistor. It was invented in 1953 by Sidney Darlington. Behavior A Darlington pair behaves like a single transistor, meaning it has one base, collector, and emitter. It typically creates a high current gain (approximately the product of the gains of the two transistors, due to the fact that their β values multiply together). A general relation between the compound current gain and the individual gains is given by: :\beta_\mathrm = \beta_1 \cdot \ ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Diode–transistor Logic
Diode–transistor logic (DTL) is a class of digital circuits that is the direct ancestor of transistor–transistor logic. It is called so because the logic gating function (e.g., AND) is performed by a diode network and the amplifying function is performed by a transistor (in contrast with RTL and TTL). Implementations The DTL circuit shown in the picture consists of three stages: an input diode logic stage (D1, D2 and R1), an intermediate level shifting stage (R3 and R4), and an output common-emitter amplifier stage (Q1 and R2). If both inputs A and B are high (logic 1; near V+), then the diodes D1 and D2 are reverse biased. Resistors R1 and R3 will then supply enough current to turn on Q1 (drive Q1 into saturation) and also supply the current needed by R4. There will be a small positive voltage on the base of Q1 (VBE, about 0.3 V for germanium and 0.6 V for silicon). The turned on transistor's collector current will then pull the output Q low (logic 0; VCE(sat), usuall ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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