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BACPAC
BACPAC, or the Berkeley Advanced Chip Performance Calculator, is a software program to explore the effect of changes in IC technology. The use enters a set of fairly fundamental properties of the technology (such as interconnect layer thickness, and logic depth) and the program estimates the system level performance of an IC built with these assumptions. Previous work in this area can be found in and, but these do not consider many of the effects of deep-sub-micrometre interconnect. BACPAC is based on the work in.D. Sylvester and K. Keutzer, “Getting to the bottom of deep submicron,” Proc. of International Conference on CAD, pp. 203–211, 1998. BACPAC uses analytical approximations for system properties such as delay and interconnect requirements. The intent is not absolute accuracy for a given design, but to show trends and effects of technology changes. Inputs to BACPAC Interconnect *Number of routing layers *Pitches (center to center distance of each layer) *Res ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Rent's Rule
Rent's rule pertains to the organization of computing logic, specifically the relationship between the number of external signal connections to a logic block (i.e., the number of "pins") with the number of logic gates in the logic block, and has been applied to circuits ranging from small digital circuits to mainframe computers. Put simply, it states that there is a simple power law relationship between these two values (pins and gates). E. F. Rent's discovery and first publications In the 1960s, E. F. Rent, an IBM employee, found a remarkable trend between the number of pins (terminals, ''T'') at the boundaries of integrated circuit designs at IBM and the number of internal components (''g''), such as logic gates or standard cells. On a log–log plot, these datapoints were on a straight line, implying a power-law relation T = t g^p, where ''t'' and ''p'' are constants (''p'' < 1.0, and generally 0.5 < ''p'' < 0.8). Rent's findings in IBM-internal memoranda were pub ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Resistivity
Electrical resistivity (also called specific electrical resistance or volume resistivity) is a fundamental property of a material that measures how strongly it resists electric current. A low resistivity indicates a material that readily allows electric current. Resistivity is commonly represented by the Greek letter (rho). The SI unit of electrical resistivity is the ohm- meter (Ω⋅m). For example, if a solid cube of material has sheet contacts on two opposite faces, and the resistance between these contacts is , then the resistivity of the material is . Electrical conductivity or specific conductance is the reciprocal of electrical resistivity. It represents a material's ability to conduct electric current. It is commonly signified by the Greek letter (sigma), but (kappa) (especially in electrical engineering) and (gamma) are sometimes used. The SI unit of electrical conductivity is siemens per metre (S/m). Resistivity and conductivity are intens ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Dielectric Constant
The relative permittivity (in older texts, dielectric constant) is the permittivity of a material expressed as a ratio with the electric permittivity of a vacuum. A dielectric is an insulating material, and the dielectric constant of an insulator measures the ability of the insulator to store electric energy in an electrical field. Permittivity is a material's property that affects the Coulomb force between two point charges in the material. Relative permittivity is the factor by which the electric field between the charges is decreased relative to vacuum. Likewise, relative permittivity is the ratio of the capacitance of a capacitor using that material as a dielectric, compared with a similar capacitor that has vacuum as its dielectric. Relative permittivity is also commonly known as the dielectric constant, a term still used but deprecated by standards organizations in engineering as well as in chemistry. Definition Relative permittivity is typically denoted as (sometimes ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Threshold Voltage
The threshold voltage, commonly abbreviated as Vth or VGS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (VGS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency. When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead. This is somewhat confusing since ''pinch off'' applied to insulated-gate field-effect transistor (IGFET) refers to the channel pinching that leads to current saturation behaviour under high source–drain bias, even though the current is never off. Unlike ''pinch off'', the term ''threshold voltage'' is unambiguous and refers to the same concept in any field-effect transistor. Basic principles In n-channel ''enhancement-mode'' devices, a conductive channel does not exist naturally within the transistor, and a positive gate-to-source voltage is necessary to create one s ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gate Oxide
The gate oxide is the dielectric layer that separates the gate terminal of a MOSFET (metal-oxide-semiconductor field-effect transistor) from the underlying source and drain terminals as well as the conductive channel that connects source and drain when the transistor is turned on. Gate oxide is formed by thermal oxidation of the silicon of the channel to form a thin (5 - 200 nm) insulating layer of silicon dioxide. The insulating silicon dioxide layer is formed through a process of self-limiting oxidation, which is described by the Deal–Grove model. A conductive gate material is subsequently deposited over the gate oxide to form the transistor. The gate oxide serves as the dielectric layer so that the gate can sustain as high as 1 to 5 MV/cm transverse electric field in order to strongly modulate the conductance of the channel. Above the gate oxide is a thin electrode layer made of a conductor which can be aluminium, a highly doped silicon, a refractory metal such as tungs ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Fan-in
Fan-in is the number of inputs a logic gate can handle. For instance the fan-in for the AND gate shown in the figure is 3. Physical logic gates with a large fan-in tend to be slower than those with a small fan-in. This is because the complexity of the input circuitry increases the input capacitance of the device. Using logic gates with higher fan-in will help in reducing the depth of a logic circuit; this is because circuit design is realized by the target logic family at a digital level, meaning any large fan-in logic gates are simply the smaller fan-in gates chained together in series at a given depth to widen the circuit instead. Fan-in tree of a node refers to a collection of signals that contribute to the input signal of that node. In quantum logic gates the fan-in always has to be equal to the number of outputs, the Fan-out. Gates for which the numbers of inputs and outputs differ would not be reversible (unitary Unitary may refer to: Mathematics * Unitary divisor * U ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gate Array
A gate array is an approach to the design and manufacture of application-specific integrated circuits (ASICs) using a prefabricated chip with components that are later interconnected into logic devices (e.g. NAND gates, flip-flops, etc.) according to a custom order by adding metal interconnect layers in the factory. It was popular during upheaval in semiconductor industry in 80s and its usage declined by end of 90s. Similar technologies have also been employed to design and manufacture analog, analog-digital, and structured arrays, but, in general, these are not called gate arrays. Gate arrays have also been known as ''uncommitted logic arrays'' (''ULAs''), which also offered linear circuit functions, and ''semi-custom chips''. History Development Gate arrays had several concurrent development paths. Ferranti in the UK pioneered commercializing bipolar ULA technology, offering circuits of "100 to 10,000 gates and above" by 1983. The company's early lead in semi-custom chips ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Clock Frequency
In computing, the clock rate or clock speed typically refers to the frequency at which the clock generator of a processor can generate pulses, which are used to synchronize the operations of its components, and is used as an indicator of the processor's speed. It is measured in the SI unit of frequency hertz (Hz). The clock rate of the first generation of computers was measured in hertz or kilohertz (kHz), the first personal computers (PCs) to arrive throughout the 1970s and 1980s had clock rates measured in megahertz (MHz), and in the 21st century the speed of modern CPUs is commonly advertised in gigahertz (GHz). This metric is most useful when comparing processors within the same family, holding constant other features that may affect performance. Determining factors Binning Manufacturers of modern processors typically charge premium prices for processors that operate at higher clock rates, a practice called binning. For a given CPU, the clock rates are determined at the ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
