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GgNMOS
Grounded-gate NMOS, commonly known as ggNMOS, is an electrostatic discharge (ESD) protection device used within CMOS integrated circuits (ICs). Such devices are used to protect the inputs and outputs of an IC, which can be accessed off-chip ( wire-bonded to the pins of a package or directly to a printed circuit board) and are therefore subject to ESD when touched. An ESD event can deliver a large amount of energy to the chip, potentially destroying input/output circuitry; a ggNMOS device or other ESD protective devices provide a safe path for current to flow, instead of through more sensitive circuitry. ESD protection by means of such devices or other techniques is important to product reliability: 35% of all IC failures in the field are associated with ESD damage. Structure As the name implies, a ggNMOS device consists of a relatively wide NMOS device in which the gate, source, and body are tied together to ground. The drain of the ggNMOS is connected to the I/O pad under pr ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOSFET
upright=1.3, Two power MOSFETs in amperes">A in the ''on'' state, dissipating up to about 100 watt">W and controlling a load of over 2000 W. A matchstick is pictured for scale. In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The term ''metal–insulator–semiconductor field-effect transistor'' (''MISFET'') is almost synonymous with ''MOSFET''. Another near-synonym is ''insulated-gate field-effect transistor'' (''IGFET''). The main advantage of a MOSFET is that it requires almost no input current to control the load current under steady-state or low-frequency conditions ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electrostatic Discharge
Electrostatic discharge (ESD) is a sudden and momentary flow of electric current between two differently-charged objects when brought close together or when the dielectric between them breaks down, often creating a visible electric spark, spark associated with the static electricity between the objects. ESD can create spectacular electric sparks (lightning, with the accompanying sound of thunder, is an example of a large-scale ESD event), but also less dramatic forms, which may be neither seen nor heard, yet still be large enough to cause damage to sensitive electronic devices. Electric sparks require a field strength above approximately 4 million V/m in air, as notably occurs in lightning strikes. Other forms of ESD include corona discharge from sharp electrodes, brush discharge from blunt electrodes, etc. ESD can cause harmful effects of importance in industry, including explosions in gas, fuel vapor and coal dust, as well as failure of solid state electronics components such as ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Avalanche Breakdown
Avalanche breakdown (or the avalanche effect) is a phenomenon that can occur in both insulating and semiconducting materials. It is a form of electric current multiplication that can allow very large currents within materials which are otherwise good insulators. It is a type of electron avalanche. The avalanche process occurs when carriers in the transition region are accelerated by the electric field to energies sufficient to create mobile or free electron-hole pairs via collisions with bound electrons. Explanation Materials conduct electricity if they contain mobile charge carriers. There are two types of charge carriers in a semiconductor: free electrons (mobile electrons) and electron holes (mobile holes which are missing electrons from the normally-occupied electron states). A normally-bound electron (e.g., in a bond) in a reverse-biased diode may break loose due to a thermal fluctuation or excitation, creating a mobile electron-hole pair (exciton). If there is a volt ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electrical Conductivity
Electrical resistivity (also called volume resistivity or specific electrical resistance) is a fundamental specific property of a material that measures its electrical resistance or how strongly it resists electric current. A low resistivity indicates a material that readily allows electric current. Resistivity is commonly represented by the Greek alphabet, Greek letter (Rho (letter), rho). The SI unit of electrical resistivity is the ohm-metre (Ω⋅m). For example, if a solid cube of material has sheet contacts on two opposite faces, and the Electrical resistance, resistance between these contacts is , then the resistivity of the material is . Electrical conductivity (or specific conductance) is the reciprocal of electrical resistivity. It represents a material's ability to conduct electric current. It is commonly signified by the Greek letter (Sigma (letter), sigma), but (kappa) (especially in electrical engineering) and (gamma) are sometimes used. ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Parasitic Resistance
In electrical networks, a parasitic impedance is a circuit element ( resistance, inductance or capacitance) which is not desirable in an electrical component for its intended purpose. For instance, a resistor is designed to possess resistance, but will also possess unwanted parasitic capacitance. Parasitic impedances are unavoidable. All conductors possess resistance and inductance and the principles of duality ensure that where there is inductance, there will also be capacitance. Component designers will strive to minimise parasitic elements but are unable to eliminate them. Discrete components will often have some parasitic values detailed on their datasheets to aid circuit designers in compensating for unwanted effects. The most commonly seen manifestations of parasitic impedances in components are in the parasitic inductance and resistance of the component leads and the parasitic capacitance of the component packaging. For wound components such as inductors and transfo ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
P-type Semiconductor
P-type or type P may refer to: P-type * P-type orbit, type of planetary orbit in a binary system * P-type asteroid, type of asteroid * P-type semiconductor * MG P-type, a type of automobile * P-type ATPase, evolutionarily related ion and lipid pumps * P-Type (rapper), a South Korean rapper Type P * the Audi Type P, a car * a Type P thermocouple See also * For P (and Q) in propositional logic, see modus ponens. {{disambiguation ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Wafer (electronics)
In electronics, a wafer (also called a slice or substrate) is a thin slice of semiconductor, such as a crystalline silicon (c-Si, silicium), used for Semiconductor device fabrication, the fabrication of integrated circuits and, in photovoltaics, to manufacture solar cells. The wafer serves as the substrate (materials science), substrate for microelectronic devices built in and upon the wafer. It undergoes many microfabrication processes, such as doping (semiconductor), doping, ion implantation, Etching (microfabrication), etching, thin-film deposition of various materials, and Photolithography, photolithographic patterning. Finally, the individual microcircuits are separated by wafer dicing and Integrated circuit packaging, packaged as an integrated circuit. History In the semiconductor industry, the term wafer appeared in the 1950s to describe a thin round slice of semiconductor material, typically germanium or silicon. The round shape characteristic of these wafers comes f ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Bipolar Junction Transistor
A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor (FET), uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current between the remaining two terminals, making the device capable of amplification or switching. BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material. The junctions can be made in several different ways, such as changing the doping of the semiconductor material as it is grown, by depositing metal pellets to form alloy junctions, or by such methods as diffusion of n-type and p-type doping substances into the crystal. The superior predictability and performance of junction transistors quickly displaced the original point-contact transistor. Diffused trans ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
N-type Semiconductor
N-type, N type or Type N may refer to: * N-type semiconductor is a key material in the manufacture of transistors and integrated circuits * An N-type connector is a threaded RF connector used to join coaxial cables * The MG N-type Magnette was produced by the MG Car company from October 1934 to 1936 * The N-type calcium channel is a type of voltage-dependent calcium channel * A Type (model theory) with n free variables * The Dennis N-Type vehicle chassis was used to build fire engines and trucks * The N type carriage The N type carriages are an intercity Passenger car (rail), passenger carriage used on the Rail transport in Victoria, railways of Victoria, Australia. They were introduced between 1981 and 1984 as part of the 'New Deal (railway), New Deal' re ... is an intercity passenger carriage used on the railways of Victoria, Australia * The REP Type N was a military reconnaissance aircraft produced in France in 1914 * N type battery, see: N battery * Type N power plu ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Parasitic Structure
In a semiconductor device, a parasitic structure is a portion of the device that resembles in structure some other, simpler semiconductor device, and causes the device to enter an unintended mode of operation when subjected to conditions outside of its normal range. For example, the internal structure of an NPN bipolar transistor resembles two P-N junction diodes connected together by a common anode. In normal operation the base-emitter junction does indeed form a diode, but in most cases it is undesirable for the base-collector junction to behave as a diode. If a sufficient forward bias is placed on this junction it will form a parasitic diode structure, and current will flow from base to collector. A common parasitic structure is that of a silicon controlled rectifier (SCR). Once triggered, an SCR conducts for as long as there is a current, necessitating a complete power-down to reset the behavior of the device. This condition is known as latchup In electronics, a la ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
