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Threshold Displacement Energy
In materials science, the threshold displacement energy () is the minimum kinetic energy that an atom in a solid needs to be permanently displaced from its site in the lattice to a defect position. It is also known as "displacement threshold energy" or just "displacement energy". In a crystal, a separate threshold displacement energy exists for each crystallographic direction. Then one should distinguish between the minimum () and average () over all lattice directions' threshold displacement energies. In amorphous solids, it may be possible to define an effective displacement energy to describe some other average quantity of interest. Threshold displacement energies in typical solids are of the order of 10-50 eV. M. Nastasi, J. Mayer, and J. Hirvonen, Ion-Solid Interactions - Fundamentals and Applications, Cambridge University Press, Cambridge, Great Britain, 1996 P. Lucasson, The production of Frenkel defects in metals, in Fundamental Aspects of Radiation Damage in Metals, ed ...
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Materials Science
Materials science is an interdisciplinary field of researching and discovering materials. Materials engineering is an engineering field of finding uses for materials in other fields and industries. The intellectual origins of materials science stem from the Age of Enlightenment, when researchers began to use analytical thinking from chemistry, physics, and engineering to understand ancient, phenomenological observations in metallurgy and mineralogy. Materials science still incorporates elements of physics, chemistry, and engineering. As such, the field was long considered by academic institutions as a sub-field of these related fields. Beginning in the 1940s, materials science began to be more widely recognized as a specific and distinct field of science and engineering, and major technical universities around the world created dedicated schools for its study. Materials scientists emphasize understanding how the history of a material (''processing'') influences its struc ...
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Frenkel Defect
In crystallography, a Frenkel defect is a type of point defect in crystalline solids, named after its discoverer Yakov Frenkel. The defect forms when an atom or smaller ion (usually cation) leaves its place in the structure, creating a vacancy and becomes an interstitial by lodging in a nearby location. In elemental systems, they are primarily generated during particle irradiation, as their formation enthalpy is typically much higher than for other point defects, such as vacancies, and thus their equilibrium concentration according to the Boltzmann distribution is below the detection limit. In ionic crystals, which usually possess low coordination number or a considerable disparity in the sizes of the ions, this defect can be generated also spontaneously, where the smaller ion (usually the cation) is dislocated. Similar to a Schottky defect the Frenkel defect is a stoichiometric defect (does not change the over all stoichiometry of the compound). In ionic compounds, the ...
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Wigner Effect
The Wigner effect (named for its discoverer, Eugene Wigner), also known as the discomposition effect or Wigner's disease, is the displacement of atoms in a solid caused by neutron radiation. Any solid can display the Wigner effect. The effect is of most concern in neutron moderators, such as graphite, intended to reduce the speed of fast neutrons, thereby turning them into thermal neutrons capable of sustaining a nuclear chain reaction involving uranium-235. Cause To cause the Wigner effect, neutrons that collide with the atoms in a crystal structure must have enough energy to displace them from the lattice. This amount ( threshold displacement energy) is approximately 25 eV. A neutron's energy can vary widely, but it is not uncommon to have energies up to and exceeding 10 MeV (10,000,000 eV) in the centre of a nuclear reactor. A neutron with a significant amount of energy will create a displacement cascade in a matrix via elastic collisions. For example, a 1 MeV neutron s ...
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Stopping Power (particle Radiation)
In nuclear and materials physics, stopping power is the retarding force acting on charged particles, typically alpha and beta particles, due to interaction with matter, resulting in loss of particle kinetic energy. Stopping power is also interpreted as the rate at which a material absorbs the kinetic energy of a charged particle. Its application is important in a wide range of thermodynamic areas such as radiation protection, ion implantation and nuclear medicine.ICRU Report 73: Stopping of Ions heavier than Helium, Journal of the ICRU, 5 No. 1 (2005), Oxford Univ. Press Definition and Bragg curve Both charged and uncharged particles lose energy while passing through matter. Positive ions are considered in most cases below. The stopping power depends on the type and energy of the radiation and on the properties of the material it passes. Since the production of an ion pair (usually a positive ion and a (negative) electron) requires a fixed amount of energy (for example, 33 ...
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Threshold Energy
In particle physics, the threshold energy for production of a particle is the minimum kinetic energy that must be imparted to one of a pair of particles in order for their collision to produce a given result. If the desired result is to produce a third particle then the threshold energy is greater than or equal to the rest energy of the desired particle. In most cases, since momentum is also conserved, the threshold energy is significantly greater than the rest energy of the desired particle. The threshold energy should not be confused with the threshold displacement energy, which is the minimum energy needed to permanently displace an atom in a crystal to produce a crystal defect in radiation material science. Example of pion creation Consider the collision of a mobile proton with a stationary proton so that a ^0 meson is produced: p^+ + p^+ \to p^+ + p^+ + \pi^0 We can calculate the minimum energy that the moving proton must have in order to create a pion. Transforming into ...
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Ion Implantation
Ion implantation is a low-temperature process by which ions of one element are accelerated into a solid target, thereby changing the target's physical, chemical, or electrical properties. Ion implantation is used in semiconductor device fabrication and in metal finishing, as well as in materials science research. The ions can alter the elemental composition of the target (if the ions differ in composition from the target) if they stop and remain in the target. Ion implantation also causes chemical and physical changes when the ions impinge on the target at high energy. The crystal structure of the target can be damaged or even destroyed by the energetic collision cascades, and ions of sufficiently high energy (tens of MeV) can cause nuclear transmutation. General principle Ion implantation equipment typically consists of an ion source, where ions of the desired element are produced, an accelerator, where the ions are electrostatically accelerated to a high energy or usin ...
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Stopping And Range Of Ions In Matter
Stopping and Range of Ions in Matter (SRIM) is a group of computer programs which calculate interactions between stopping power (particle radiation), ions and matter; the core of SRIM is a program called Transport of Ions in Matter (TRIM). SRIM is popular in the ion implantation research and technology community, and also used widely in other branches of radiation material science. History SRIM originated in 1980 as a DOS based program then called TRIM. The DOS version was upgraded until 1998 and is still available for download. It will run on a Unix PC having a DOS emulator. SRIM-2000 requires a computer with any Windows operating system. The program may work with Unix or Macintosh based systems through Wine (software), Wine. The programs were developed by James F. Ziegler and Jochen P. Biersack around 1983 and are being continuously upgraded with the major changes occurring approximately every five years. SRIM is based on a Monte Carlo method, Monte Carlo simulation method, na ...
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Stopping Power (particle Radiation)
In nuclear and materials physics, stopping power is the retarding force acting on charged particles, typically alpha and beta particles, due to interaction with matter, resulting in loss of particle kinetic energy. Stopping power is also interpreted as the rate at which a material absorbs the kinetic energy of a charged particle. Its application is important in a wide range of thermodynamic areas such as radiation protection, ion implantation and nuclear medicine.ICRU Report 73: Stopping of Ions heavier than Helium, Journal of the ICRU, 5 No. 1 (2005), Oxford Univ. Press Definition and Bragg curve Both charged and uncharged particles lose energy while passing through matter. Positive ions are considered in most cases below. The stopping power depends on the type and energy of the radiation and on the properties of the material it passes. Since the production of an ion pair (usually a positive ion and a (negative) electron) requires a fixed amount of energy (for example, 33 ...
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Crystallographic Defect
A crystallographic defect is an interruption of the regular patterns of arrangement of atoms or molecules in Crystal, crystalline solids. The positions and orientations of particles, which are repeating at fixed distances determined by the Crystal structure#unit cell, unit cell parameters in crystals, exhibit a periodic crystal structure, but this is usually imperfect.Ehrhart, P. (1991Properties and interactions of atomic defects in metals and alloys, volume 25 of Landolt-Börnstein, New Series III, chapter 2, p. 88, Springer, Berlin Several types of defects are often characterized: point defects, line defects, planar defects, bulk defects. Topological homotopy establishes a mathematical method of characterization. Point defects Point defects are defects that occur only at or around a single lattice point. They are not extended in space in any dimension. Strict limits for how small a point defect is are generally not defined explicitly. However, these defects typically involve at ...
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Point Defect
A crystallographic defect is an interruption of the regular patterns of arrangement of atoms or molecules in crystalline solids. The positions and orientations of particles, which are repeating at fixed distances determined by the unit cell parameters in crystals, exhibit a periodic crystal structure, but this is usually imperfect.Ehrhart, P. (1991Properties and interactions of atomic defects in metals and alloys, volume 25 of Landolt-Börnstein, New Series III, chapter 2, p. 88, Springer, Berlin Several types of defects are often characterized: point defects, line defects, planar defects, bulk defects. Topological homotopy establishes a mathematical method of characterization. Point defects Point defects are defects that occur only at or around a single lattice point. They are not extended in space in any dimension. Strict limits for how small a point defect is are generally not defined explicitly. However, these defects typically involve at most a few extra or missing atoms. La ...
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Interatomic Potential
Interatomic potentials are mathematical functions to calculate the potential energy of a system of atoms with given positions in space.M. P. Allen and D. J. Tildesley. Computer Simulation of Liquids. Oxford University Press, Oxford, England, 1989.R. Lesar. Introduction to Computational Materials Science. Cambridge University Press, 2013. Interatomic potentials are widely used as the physical basis of molecular mechanics and molecular dynamics simulations in computational chemistry, computational physics and computational materials science to explain and predict materials properties. Examples of quantitative properties and qualitative phenomena that are explored with interatomic potentials include lattice parameters, surface energies, interfacial energies, adsorption, cohesion, thermal expansion, and elastic and plastic material behavior, as well as chemical reactions.N. W. Ashcroft and N. D. Mermin. Solid State Physics.Saunders College, Philadelphia, 1976.Charles Kittel. Introdu ...
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