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Stranski–Krastanov Growth
Stranski–Krastanov growth (SK growth, also Stransky–Krastanov or Stranski–Krastanow) is one of the three primary modes by which thin films grow epitaxially at a crystal surface or interface. Also known as 'layer-plus-island growth', the SK mode follows a two step process: initially, complete films of adsorbates, up to several monolayers thick, grow in a layer-by-layer fashion on a crystal substrate. Beyond a critical layer thickness, which depends on strain and the chemical potential of the deposited film, growth continues through the nucleation and coalescence of adsorbate 'islands'. This growth mechanism was first noted by Ivan Stranski and Lyubomir Krastanov in 1938. It wasn't until 1958 however, in a seminal work by Ernst Bauer published in ''Zeitschrift für Kristallographie'', that the SK, Volmer–Weber, and Frank–van der Merwe mechanisms were systematically classified as the primary thin-film growth processes. Since then, SK growth has been the subject of inten ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Thin Film
A thin film is a layer of materials ranging from fractions of a nanometer ( monolayer) to several micrometers in thickness. The controlled synthesis of materials as thin films (a process referred to as deposition) is a fundamental step in many applications. A familiar example is the household mirror, which typically has a thin metal coating on the back of a sheet of glass to form a reflective interface. The process of silvering was once commonly used to produce mirrors, while more recently the metal layer is deposited using techniques such as sputtering. Advances in thin film deposition techniques during the 20th century have enabled a wide range of technological breakthroughs in areas such as magnetic recording media, electronic semiconductor devices, integrated passive devices, light-emitting diodes, optical coatings (such as antireflective coatings), hard coatings on cutting tools, and for both energy generation (e.g. thin-film solar cells) and storage ( thin-film bat ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Frank–van Der Merwe Growth
Frank–Van der Merwe growth (FM growth) is one of the three primary modes by which thin films grow epitaxially at a crystal surface or interface. It is also known as 'layer-by-layer growth'. It is considered an ideal growth model, requiring perfect lattice matching between the substrate and the layer growing on to it, and it is usually limited to homoepitaxy. For FM growth to occur, the atoms that are to be deposited should be more attracted to the substrate than to each other, which is in contrast to the layer-plus-island growth model. FM growth is the preferred growth model for producing smooth films. It was first described by South African physicist Jan van der Merwe and British physicist Charles Frank in a series of four papers based on Van der Merwe's PhD research between 1947 and 1949. See also * Epitaxy * Thin films * Molecular-beam epitaxy Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manu ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
RHEED
Reflection high-energy electron diffraction (RHEED) is a technique used to characterize the surface of crystalline materials. RHEED systems gather information only from the surface layer of the sample, which distinguishes RHEED from other materials characterization methods that also rely on diffraction of high-energy electrons. Transmission electron microscopy, another common electron diffraction method samples mainly the bulk of the sample due to the geometry of the system, although in special cases it can provide surface information. Low-energy electron diffraction (LEED) is also surface sensitive, but LEED achieves surface sensitivity through the use of low energy electrons. Introduction A RHEED system requires an electron source (gun), photoluminescent detector screen and a sample with a clean surface, although modern RHEED systems have additional parts to optimize the technique. The electron gun generates a beam of electrons which strike the sample at a very small angle relat ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Low-energy Electron Diffraction
Low-energy electron diffraction (LEED) is a technique for the determination of the surface structure of single crystal, single-crystalline materials by bombardment with a collimated beam of low-energy electrons (30–200 eV) and observation of diffracted electrons as spots on a fluorescent screen. LEED may be used in one of two ways: # Qualitatively, where the diffraction pattern is recorded and analysis of the spot positions gives information on the symmetry of the surface structure. In the presence of an adsorbate the qualitative analysis may reveal information about the size and rotational alignment of the adsorbate unit cell with respect to the substrate unit cell. # Quantitatively, where the intensities of diffracted beams are recorded as a function of incident electron beam energy to generate the so-called I–V curves. By comparison with theoretical curves, these may provide accurate information on atomic positions on the surface at hand. Historical perspective An el ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Auger Electron Spectroscopy
A Hanford scientist uses an Auger electron spectrometer to determine the elemental composition of surfaces. Auger electron spectroscopy (AES; pronounced in French) is a common analytical technique used specifically in the study of surfaces and, more generally, in the area of materials science. It is a form of electron spectroscopy that relies on the Auger effect, based on the analysis of energetic electrons emitted from an excited atom after a series of internal relaxation events. The Auger effect was discovered independently by both Lise Meitner and Pierre Auger in the 1920s. Though the discovery was made by Meitner and initially reported in the journal ''Zeitschrift für Physik'' in 1922, Auger is credited with the discovery in most of the scientific community. Until the early 1950s Auger transitions were considered nuisance effects by spectroscopists, not containing much relevant material information, but studied so as to explain anomalies in X-ray spectroscopy data. Since 195 ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Germanium
Germanium is a chemical element; it has Symbol (chemistry), symbol Ge and atomic number 32. It is lustrous, hard-brittle, grayish-white and similar in appearance to silicon. It is a metalloid or a nonmetal in the carbon group that is chemically similar to silicon. Like silicon, germanium naturally Chemical reaction, reacts and forms complexes with oxygen in nature. Because it seldom appears in high concentration, germanium was found comparatively late in the Timeline of chemical element discoveries, discovery of the elements. Germanium ranks 50th Abundance of elements in Earth's crust, in abundance of the elements in the Earth's crust. In 1869, Dmitri Mendeleev Mendeleev's predicted elements, predicted its existence and some of its Chemical property, properties from its position on his periodic table, and called the element ekasilicon. On February 6, 1886, Clemens Winkler at Freiberg University found the new element, along with silver and sulfur, in the mineral argyrodite. Winkle ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Silicon
Silicon is a chemical element; it has symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic lustre, and is a tetravalent metalloid (sometimes considered a non-metal) and semiconductor. It is a member of group 14 in the periodic table: carbon is above it; and germanium, tin, lead, and flerovium are below it. It is relatively unreactive. Silicon is a significant element that is essential for several physiological and metabolic processes in plants. Silicon is widely regarded as the predominant semiconductor material due to its versatile applications in various electrical devices such as transistors, solar cells, integrated circuits, and others. These may be due to its significant band gap, expansive optical transmission range, extensive absorption spectrum, surface roughening, and effective anti-reflection coating. Because of its high chemical affinity for oxygen, it was not until 1823 that Jöns Jakob Berzelius was first able to p ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Misfit Dislocation
Misfit may refer to: Film, books, and television * Misfit (short story), "Misfit" (short story), a 1939 short story by Robert A. Heinlein * The Misfit, a character in Flannery O'Connor's short story "A Good Man Is Hard to Find (short story), A Good Man Is Hard to Find" * Misfit (1965 film), ''Misfit'' (1965 film), a 1965 American film * The Misfit (TV series), ''The Misfit'' (TV series), a 1970s ATV sitcom series * Salah Asuhan (film), ''Salah Asuhan'' (film), a 1972 Indonesian film released internationally as ''The Misfit'' * Misfit (2017 film), ''Misfit'' (2017 film), a 2017 Dutch film Music * Misfit (songwriter), Korean lyricist at S.M. Entertainment * Misfit (Amy Studt song), "Misfit" (Amy Studt song), 2003 *Misfit (Curiosity Killed the Cat song), "Misfit" (Curiosity Killed the Cat song), 1986 * "Misfit", 1974 song by Carly Simon from Hotcakes (album), ''Hotcakes'' * "Misfit", song by Elefant from ''Sunlight Makes Me Paranoid'' * "Misfit", 1980 song by Wipers from their album ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Wetting
Wetting is the ability of a liquid to displace gas to maintain contact with a solid surface, resulting from intermolecular interactions when the two are brought together. These interactions occur in the presence of either a gaseous phase or another liquid phase not miscible with the wetting liquid. The degree of wetting (wettability) is determined by a force balance between adhesive and cohesive forces. There are two types of wetting: non-reactive wetting and reactive wetting. Wetting is important in the bonding or adherence of two materials. The wetting power of a liquid, and surface forces which control wetting, are also responsible for related effects, including capillary effects. Surfactants can be used to increase the wetting power of liquids such as water. Wetting has gained increasing attention in nanotechnology and nanoscience research, following the development of nanomaterials over the past two decades (i.e., graphene, carbon nanotube, boron nitride nanomesh). ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Edge Dislocation
In materials science, a dislocation or Taylor's dislocation is a linear crystallographic defect or irregularity within a crystal structure that contains an abrupt change in the arrangement of atoms. The movement of dislocations allow atoms to slide over each other at low stress levels and is known as ''glide'' or slip. The crystalline order is restored on either side of a ''glide dislocation'' but the atoms on one side have moved by one position. The crystalline order is not fully restored with a ''partial dislocation''. A dislocation defines the boundary between ''slipped'' and ''unslipped'' regions of material and as a result, must either form a complete loop, intersect other dislocations or defects, or extend to the edges of the crystal. A dislocation can be characterised by the distance and direction of movement it causes to atoms which is defined by the Burgers vector. Plastic deformation of a material occurs by the creation and movement of many dislocations. The number and ar ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
