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Schottky Junction Solar Cell
In a basic Schottky-junction (Schottky-barrier) solar cell, an interface between a metal and a semiconductor provides the band bending necessary for charge separation. Traditional solar cells are composed of p-type and n-type semiconductor layers sandwiched together, forming the source of built-in voltage (a p-n junction). Due to differing energy levels between the Fermi level of the metal and the conduction band of the semiconductor, an abrupt potential difference is created, instead of the smooth band transition observed across a p-n junction in a standard solar cell, and this is a Schottky height barrier. Although vulnerable to higher rates of thermionic emission, manufacturing of Schottky barrier solar cells proves to be cost-effective and industrially scalable. However, research has shown thin insulating layers between metal and semiconductors improve solar cell performance, generating interest in metal-insulator-semiconductor Schottky junction solar cells. A thin insulat ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Standard Solar Cell
Standard may refer to: Symbols * Colours, standards and guidons, kinds of military signs * Standard (emblem), a type of a large symbol or emblem used for identification Norms, conventions or requirements * Standard (metrology), an object that bears a defined relationship to a unit of measure used for calibration of measuring devices * Standard (timber unit), an obsolete measure of timber used in trade * Breed standard In animal husbandry or animal fancy, a breed standard is a description of the characteristics of a hypothetical or ideal example of a breed. The description may include physical or morphological detail, genetic criteria, or criteria of athletic ... (also called bench standard), in animal fancy and animal husbandry * BioCompute Object, BioCompute Standard, a standard for next generation sequencing * De facto standard, ''De facto'' standard, product or system with market dominance * Gold standard, a monetary system based on gold; also used metaphorically for ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Dark Current (physics)
In physics and in electronic engineering, dark current is the relatively small electric current that flows through photosensitive devices such as a photomultiplier tube, photodiode, or charge-coupled device even when no photons enter the device; it consists of the charges generated in the detector when no outside radiation is entering the detector. It is referred to as reverse bias leakage current in non-optical devices and is present in all diodes. Physically, dark current is due to the random generation of electrons and holes within the depletion region of the device. The charge generation rate is related to specific crystallographic defects within the depletion region. Dark-current spectroscopy can be used to determine the defects present by monitoring the peaks in the dark current histogram's evolution with temperature. Dark current is one of the main sources for noise in image sensors such as charge-coupled devices. The pattern of different dark currents can result in a ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Oxide
An oxide () is a chemical compound that contains at least one oxygen atom and one other element in its chemical formula. "Oxide" itself is the dianion of oxygen, an O2– (molecular) ion. with oxygen in the oxidation state of −2. Most of the Earth's crust consists of oxides. Even materials considered pure elements often develop an oxide coating. For example, aluminium foil develops a thin skin of Al2O3 (called a passivation layer) that protects the foil from further corrosion.Greenwood, N. N.; & Earnshaw, A. (1997). Chemistry of the Elements (2nd Edn.), Oxford:Butterworth-Heinemann. . Stoichiometry (the measurable relationship between reactants and chemical equations of a equation or reaction) Oxides are extraordinarily diverse in terms of stoichiometries and in terms of the structures of each stoichiometry. Most elements form oxides of more than one stoichiometry. A well known example is carbon monoxide and carbon dioxide.Greenwood, N. N.; & Earnshaw, A. (1997). Chemist ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOSFET
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect transistor. The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925.Lilienfeld, Julius Edgar (1926-10-08) "Method and apparatus for controlling electric currents" upright=1.6, Two power MOSFETs in watt.html" ;"title="amperes">A in the ''on'' state, dissipating up to about 100 watt">W and controlling a load of over 2000 W. A matchstick is pictured ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gallium Arsenide
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. Preparation and chemistry In the compound, gallium has a +3 oxidation state. Gallium arsenide single crystals can be prepared by three industrial processes: * The vertical gradient freeze (VGF) process. * Crystal growth using a horizontal zone furnace in the Bridgman-Stockbarger technique, in which gallium and arsenic vapors react, and free molecules deposit on a seed crystal at the cooler end of the furnace. * Liquid encapsulated Czochralski (LEC) growth is used for prod ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Anode
An anode is an electrode of a polarized electrical device through which conventional current enters the device. This contrasts with a cathode, an electrode of the device through which conventional current leaves the device. A common mnemonic is ACID, for "anode current into device". The direction of conventional current (the flow of positive charges) in a circuit is opposite to the direction of electron flow, so (negatively charged) electrons flow from the anode of a galvanic cell, into an outside or external circuit connected to the cell. For example, the end of a household battery marked with a "+" is the cathode (while discharging). In both a galvanic cell and an electrolytic cell, the anode is the electrode at which the oxidation reaction occurs. In a galvanic cell the anode is the wire or plate having excess negative charge as a result of the oxidation reaction. In an electrolytic cell, the anode is the wire or plate upon which excess positive charge is imposed. A ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Nickel Oxide
Nickel oxide may refer to: * Nickel(II) oxide, NiO, green, well-characterised oxide * Nickel(III) oxide Nickel (III) oxide is the inorganic compound In chemistry, an inorganic compound is typically a chemical compound that lacks carbon–hydrogen bonds, that is, a compound that is not an organic compound. The study of inorganic compounds is a subf ..., Ni2O3, black, not well-characterised oxide * Oxonickelates {{Chemistry index ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Nanoelectronics
Nanoelectronics refers to the use of nanotechnology in electronic components. The term covers a diverse set of devices and materials, with the common characteristic that they are so small that inter-atomic interactions and quantum mechanical properties need to be studied extensively. Some of these candidates include: hybrid molecular/semiconductor electronics, one-dimensional nanotubes/ nanowires (e.g. silicon nanowires or carbon nanotubes) or advanced molecular electronics. Nanoelectronic devices have critical dimensions with a size range between 1 nm and 100 nm. Recent silicon MOSFET (metal-oxide-semiconductor field-effect transistor, or MOS transistor) technology generations are already within this regime, including 22 nanometers CMOS (complementary MOS) nodes and succeeding 14 nm, 10 nm and 7 nm FinFET (fin field-effect transistor) generations. Nanoelectronics is sometimes considered as disruptive technology because present candidates are significantly d ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electron-beam Lithography
Electron-beam lithography (often abbreviated as e-beam lithography, EBL) is the practice of scanning a focused beam of electrons to draw custom shapes on a surface covered with an electron-sensitive film called a resist (exposing). The electron beam changes the solubility of the resist, enabling selective removal of either the exposed or non-exposed regions of the resist by immersing it in a solvent (developing). The purpose, as with photolithography, is to create very small structures in the resist that can subsequently be transferred to the substrate material, often by etching. The primary advantage of electron-beam lithography is that it can draw custom patterns (direct-write) with sub-10 nm resolution. This form of maskless lithography has high resolution and low throughput, limiting its usage to photomask fabrication, low-volume production of semiconductor devices, and research and development. Systems Electron-beam lithography systems used in commercial application ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Direct Bandgap
In semiconductor physics, the band gap of a semiconductor can be of two basic types, a direct band gap or an indirect band gap. The minimal-energy state in the conduction band and the maximal-energy state in the valence band are each characterized by a certain crystal momentum (k-vector) in the Brillouin zone. If the k-vectors are different, the material has an "indirect gap". The band gap is called "direct" if the crystal momentum of electrons and holes is the same in both the conduction band and the valence band; an electron can directly emit a photon. In an "indirect" gap, a photon cannot be emitted because the electron must pass through an intermediate state and transfer momentum to the crystal lattice. Examples of direct bandgap materials include amorphous silicon and some III-V materials such as InAs and GaAs. Indirect bandgap materials include crystalline silicon and Ge. Some III-V materials are indirect bandgap as well, for example AlSb. Implications for radiativ ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Cadmium Selenide
Cadmium selenide is an inorganic compound with the formula Cd Se. It is a black to red-black solid that is classified as a II-VI semiconductor of the n-type. Much of the current research on this compound is focused on its nanoparticles. Structure Three crystalline forms of CdSe are known which follow the structures of: wurtzite (hexagonal), sphalerite (cubic) and rock-salt (cubic). The sphalerite CdSe structure is unstable and converts to the wurtzite form upon moderate heating. The transition starts at about 130 °C, and at 700 °C it completes within a day. The rock-salt structure is only observed under high pressure. Production The production of cadmium selenide has been carried out in two different ways. The preparation of bulk crystalline CdSe is done by the High-Pressure Vertical Bridgman method or High-Pressure Vertical Zone Melting. Cadmium selenide may also be produced in the form of nanoparticles. (see applications for explanation) Several methods for t ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Minority Carriers
In physics, a charge carrier is a particle or quasiparticle that is free to move, carrying an electric charge, especially the particles that carry electric charges in electrical conductors. Examples are electrons, ions and holes. The term is used most commonly in solid state physics. In a conducting medium, an electric field can exert force on these free particles, causing a net motion of the particles through the medium; this is what constitutes an electric current. In conducting media, particles serve to carry charge: *In many metals, the charge carriers are electrons. One or two of the valence electrons from each atom are able to move about freely within the crystal structure of the metal. The free electrons are referred to as conduction electrons, and the cloud of free electrons is called a Fermi gas. Many metals have electron and hole bands. In some, the majority carriers are holes. *In electrolytes, such as salt water, the charge carriers are ions, which are atoms or molec ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
