Phonon Scattering
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Phonon Scattering
Phonons can scatter through several mechanisms as they travel through the material. These scattering mechanisms are: Umklapp phonon-phonon scattering, phonon-impurity scattering, phonon-electron scattering, and phonon-boundary scattering. Each scattering mechanism can be characterised by a relaxation rate 1/\tau which is the inverse of the corresponding relaxation time. All scattering processes can be taken into account using Matthiessen's rule. Then the combined relaxation time \tau_ can be written as: :\frac = \frac+\frac+\frac+\frac The parameters \tau_, \tau_, \tau_, \tau_\text are due to Umklapp scattering, mass-difference impurity scattering, boundary scattering and phonon-electron scattering, respectively. Phonon-phonon scattering For phonon-phonon scattering, effects by normal processes (processes which conserve the phonon wave vector - N processes) are ignored in favor of Umklapp processes (U processes). Since normal processes vary linearly with \omega and umklapp proce ...
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Phonons
In physics, a phonon is a collective excitation in a periodic, elastic arrangement of atoms or molecules in condensed matter, specifically in solids and some liquids. A type of quasiparticle, a phonon is an excited state in the quantum mechanical quantization of the modes of vibrations for elastic structures of interacting particles. Phonons can be thought of as quantized sound waves, similar to photons as quantized light waves. The study of phonons is an important part of condensed matter physics. They play a major role in many of the physical properties of condensed matter systems, such as thermal conductivity and electrical conductivity, as well as in models of neutron scattering and related effects. The concept of phonons was introduced in 1932 by Soviet physicist Igor Tamm. The name ''phonon'' comes from the Greek word (), which translates to ''sound'' or ''voice'', because long-wavelength phonons give rise to sound. The name is analogous to the word ''photon''. Definiti ...
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Umklapp Scattering
In crystalline materials, Umklapp scattering (also U-process or Umklapp process) is a scattering process that results in a wave vector (usually written ''k'') which falls outside the first Brillouin zone. If a material is periodic, it has a Brillouin zone, and any point outside the first Brillouin zone can also be expressed as a point inside the zone. So, the wave vector is then mathematically transformed to a point inside the first Brillouin zone. This transformation allows for scattering processes which would otherwise violate the conservation of momentum: two wave vectors pointing to the right can combine to create a wave vector that points to the left. This non-conservation is why crystal momentum is not a true momentum. Examples include electron-lattice potential scattering or an anharmonic phonon-phonon (or electron-phonon) scattering process, reflecting an electronic state or creating a phonon with a momentum ''k''-vector outside the first Brillouin zone. Umklapp scat ...
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Electron-longitudinal Acoustic Phonon Interaction
The electron-longitudinal acoustic phonon interaction is an interaction that can take place between an electron and a longitudinal acoustic (LA) phonon in a material such as a semiconductor. Displacement operator of the LA phonon The equations of motion of the atoms of mass M which locates in the periodic Crystal lattice, lattice is : M \frac u_ = -k_ ( u_ + u_ -2u_ ), where u_ is the displacement of the ''n''th atom from their List of types of equilibrium, equilibrium positions. Defining the displacement u_ of the \ellth atom by u_= x_ - \ell a, where x_ is the coordinates of the \ellth atom and a is the lattice constant, the displacement is given by u_= A e^ Then using Fourier transform: : Q_ = \frac \sum_ u_ e^ and : u_ = \frac \sum_ Q_ e^. Since u_ is a Hermite operator, : u_ = \frac \sum_ (Q_ e^ + Q^_ e^ ) From the definition of the Creation and annihilation operators, creation and annihilation operator a^_ = \frac (M\omega_Q_-iP_), \; a_ = \frac (M\ ...
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Matthiessen's Rule
In solid-state physics, the electron mobility characterises how quickly an electron can move through a metal or semiconductor when pulled by an electric field. There is an analogous quantity for holes, called hole mobility. The term carrier mobility refers in general to both electron and hole mobility. Electron and hole mobility are special cases of electrical mobility of charged particles in a fluid under an applied electric field. When an electric field ''E'' is applied across a piece of material, the electrons respond by moving with an average velocity called the drift velocity, v_d. Then the electron mobility ''μ'' is defined as v_d = \mu E. Electron mobility is almost always specified in units of cm2/( V⋅ s). This is different from the SI unit of mobility, m2/( V⋅ s). They are related by 1 m2/(V⋅s) = 104 cm2/(V⋅s). Conductivity is proportional to the product of mobility and carrier concentration. For example, the same conductivity could come from a small numbe ...
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Grüneisen Parameter
The Grüneisen parameter, γ, named after Eduard Grüneisen, describes the effect that changing the volume of a crystal lattice has on its vibrational properties, and, as a consequence, the effect that changing temperature has on the size or dynamics of the crystal lattice. The term is usually reserved to describe the single thermodynamic property , which is a weighted average of the many separate parameters entering Grüneisen's original formulation in terms of the phonon nonlinearities. Thermodynamic definitions Because of the equivalences between many properties and derivatives within thermodynamics (e.g. see Maxwell Relations), there are many formulations of the Grüneisen parameter which are equally valid, leading to numerous distinct yet correct interpretations of its meaning. Some formulations for the Grüneisen parameter include: \gamma = V \left(\frac\right)_V = \frac = \frac = \frac = -\left(\frac\right)_S where is volume, C_P and C_V are the principal (i.e. per-mass) ...
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Shear Modulus
In materials science, shear modulus or modulus of rigidity, denoted by ''G'', or sometimes ''S'' or ''μ'', is a measure of the elastic shear stiffness of a material and is defined as the ratio of shear stress to the shear strain: :G \ \stackrel\ \frac = \frac = \frac where :\tau_ = F/A \, = shear stress :F is the force which acts :A is the area on which the force acts :\gamma_ = shear strain. In engineering :=\Delta x/l = \tan \theta , elsewhere := \theta :\Delta x is the transverse displacement :l is the initial length of the area. The derived SI unit of shear modulus is the pascal (Pa), although it is usually expressed in gigapascals (GPa) or in thousand pounds per square inch (ksi). Its dimensional form is M1L−1T−2, replacing ''force'' by ''mass'' times ''acceleration''. Explanation The shear modulus is one of several quantities for measuring the stiffness of materials. All of them arise in the generalized Hooke's law: * Young's modulus ''E'' describes the mat ...
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