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Light Detection
Photodetectors, also called photosensors, are devices that detect light or other forms of electromagnetic radiation and convert it into an electrical signal. They are essential in a wide range of applications, from digital imaging and optical communication to scientific research and industrial automation. Photodetectors can be classified by their mechanism of detection, such as the photoelectric effect, photochemical reactions, or thermal effects, or by performance metrics like spectral response. Common types include photodiodes, phototransistors, and photomultiplier tubes, each suited to specific uses. Solar cells, which convert light into electricity, are also a type of photodetector. This article explores the principles behind photodetectors, their various types, applications, and recent advancements in the field. History The development of photodetectors began with the discovery of the photoelectric effect by Heinrich Hertz in 1887, later explained by Albert Einstein in ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
CD-ROM Photodetector
A CD-ROM (, compact disc read-only memory) is a type of read-only memory consisting of a pre-pressed optical compact disc that contains data computers can read, but not write or erase. Some CDs, called enhanced CDs, hold both computer data and audio with the latter capable of being played on a CD player, while data (such as software or digital video) is only usable on a computer (such as ISO 9660 format PC CD-ROMs). During the 1990s and early 2000s, CD-ROMs were popularly used to distribute software and data for computers and fifth generation video game consoles. DVDs as well as downloading started to replace CD-ROMs in these roles starting in the early 2000s, and the use of CD-ROMs for commercial software is now rare. History The earliest theoretical work on optical disc storage was done by independent researchers in the United States including David Paul Gregg (1958) and James Russel (1965–1975). In particular, Gregg's patents were used as the basis of the LaserDisc sp ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Line Scanner
A rotating line camera is a digital camera that uses a linear CCD array to assemble a digital image as the camera rotates. The CCD array may consist of three sensor lines, one for each RGB color channel. Advanced rotating line cameras may have multiple linear CCD arrays on the focal plate and may capture multiple panoramic images during their rotation. Line-scan technology is capable of capturing data extremely fast, and at very high image resolutions. Usually under these conditions, resulting collected image data can quickly exceed 100 MB in a fraction of a second. Line-scan-camera–based integrated systems, therefore are usually designed to streamline the camera's output in order to meet the system's objective, using computer technology which is also affordable. Line-scan cameras intended for the parcel handling industry can integrate adaptive focusing mechanisms to scan six sides of any rectangular parcel in focus, regardless of angle, and size. The resulting 2-D capture ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Specific Detectivity
Specific detectivity, or ''D*'', for a photodetector is a figure of merit used to characterize performance, equal to the reciprocal of noise-equivalent power (NEP), normalized per square root of the sensor's area and frequency bandwidth (reciprocal of twice the integration time). Specific detectivity is given by D^*=\frac, where A is the area of the photosensitive region of the detector, \Delta f is the bandwidth, and NEP the noise equivalent power in units It is commonly expressed in ''Jones'' units (cm \cdot \sqrt/ W) in honor of Robert Clark Jones who originally defined it.R. C. Jones, "Proposal of the detectivity D** for detectors limited by radiation noise," ''J. Opt. Soc. Am.'' 50, 1058 (1960), ) Given that noise-equivalent power can be expressed as a function of the responsivity \mathfrak (in units of A/W or V/W) and the noise spectral density S_n (in units of A/Hz^ or V/Hz^) as NEP=\frac, it is common to see the specific detectivity expressed as D^*=\frac. It is ofte ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Noise
Noise is sound, chiefly unwanted, unintentional, or harmful sound considered unpleasant, loud, or disruptive to mental or hearing faculties. From a physics standpoint, there is no distinction between noise and desired sound, as both are vibrations through a medium, such as air or water. The difference arises when the brain receives and perceives a sound. Acoustic noise is any sound in the acoustic domain, either deliberate (e.g., music or speech) or unintended. In contrast, noise in electronics may not be audible to the human ear and may require instruments for detection. In audio engineering, noise can refer to the unwanted residual electronic noise signal that gives rise to acoustic noise heard as a hiss. This signal noise is commonly measured using A-weighting or ITU-R 468 weighting. In experimental sciences, noise can refer to any random fluctuations of data that hinders perception of a signal. Measurement Sound is measured based on the amplitude and frequency of ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Noise-equivalent Power
Noise-equivalent power (NEP) is a measure of the sensitivity of a photodetector or detector system. It is defined as the signal power that gives a signal-to-noise ratio of one in a one hertz output bandwidth. An output bandwidth of one hertz is equivalent to half a second of integration time.The factor of one half is explained by the Nyquist–Shannon sampling theorem. The units of NEP are watts per square root hertz. The NEP is equal to the noise amplitude spectral density (expressed in units of \mathrm/\sqrt or \mathrm/\sqrt) divided by the responsivity Responsivity is a measure of the input–output Gain (electronics), gain of a detector system. In the specific case of a photodetector, it measures the electrical output per optical input. A photodetector's responsivity is usually expressed in un ... (expressed in units of \mathrm/\mathrm or \mathrm/\mathrm, respectively). The fundamental equation is SNR = P/NEP. A smaller NEP corresponds to a more sensitive detector. For exa ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Responsivity
Responsivity is a measure of the input–output Gain (electronics), gain of a detector system. In the specific case of a photodetector, it measures the electrical output per optical input. A photodetector's responsivity is usually expressed in units of amperes or volts per watt of incident radiant flux, radiant power. For a system that responds linearly to its input, there is a unique responsivity. For nonlinear systems, the responsivity is the Derivative, local slope. Many common photodetectors respond linearly as a function of the incident power. Responsivity is a function of the wavelength of the incident Electromagnetic radiation, radiation and of the sensor's properties, such as the bandgap of the material of which the photodetector is made. One simple expression for the responsivity ''R'' of a photodetector in which an optical signal is converted into an electric current (known as a photocurrent) is : R=\eta\frac\approx\eta\frac where \eta is the quantum efficiency (the c ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electron Hole
In physics, chemistry, and electronic engineering, an electron hole (often simply called a hole) is a quasiparticle denoting the lack of an electron at a position where one could exist in an atom or crystal structure, atomic lattice. Since in a normal atom or crystal lattice the negative charge of the electrons is balanced by the positive charge of the atomic nucleus, atomic nuclei, the absence of an electron leaves a net positive charge at the hole's location. Holes in a metal or semiconductor crystal lattice can move through the lattice as electrons can, and act similarly to electric charge, positively-charged particles. They play an important role in the operation of semiconductor devices such as transistors, diodes (including light-emitting diodes) and integrated circuits. If an electron is excited into a higher state it leaves a hole in its old state. This meaning is used in Auger electron spectroscopy (and other x-ray techniques), in computational chemistry, and to explai ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Quantum Efficiency
The term quantum efficiency (QE) may apply to incident photon to converted electron (IPCE) ratio of a photosensitive device, or it may refer to the TMR effect of a magnetic tunnel junction. This article deals with the term as a measurement of a device's electrical sensitivity to light. In a charge-coupled device (CCD) or other photodetector, it is the ratio between the number of charge carriers collected at either terminal and the number of photons hitting the device's photoreactive surface. As a ratio, QE is dimensionless, but it is closely related to the responsivity, which is expressed in amps per watt. Since the energy of a photon is inversely proportional to its wavelength, QE is often measured over a range of different wavelengths to characterize a device's efficiency at each photon energy level. For typical semiconductor photodetectors, QE drops to zero for photons whose energy is below the band gap. A photographic film typically has a QE of much less than 10%, while CCD ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Figure Of Merit
A figure of merit (FOM) is a performance metric that characterizes the performance of a device, system, or method, relative to its alternatives. Examples *Absolute alcohol content per currency unit in an alcoholic beverage *accurizing, Accuracy of a rifle *Audio amplifier figures of merit such as gain or efficiency *Battery life of a laptop computer New York Times, June 25, 2009 *Calories per serving *Clock rate of a CPU is often given as a figure of merit, but is of limited use in comparing between different architectures. FLOPS may be a better figure, though these too are not completely representative of the performance of a CPU. *Contrast ratio of an LCD *Frequency response of a Loudspeaker, speaker *Fill factor (solar cell), Fill factor of a solar cell *Image resolutio ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Antimony Selenide
Antimony triselenide is the chemical compound with the formula . The material exists as the sulfosalt mineral antimonselite ( IMA symbol: Atm), which crystallizes in an orthorhombic space group. In this compound, antimony has a formal oxidation state +3 and selenium −2. The bonding in this compound has covalent character as evidenced by the black color and semiconducting properties of this and related materials. The low-frequency dielectric constant (ε0) has been measured to be 133 along the ''c'' axis of the crystal at room temperature, which is unusually large. Its band gap is 1.18 eV at room temperature. The compound may be formed by the reaction of antimony with selenium Selenium is a chemical element; it has symbol (chemistry), symbol Se and atomic number 34. It has various physical appearances, including a brick-red powder, a vitreous black solid, and a grey metallic-looking form. It seldom occurs in this elem ... and has a melting point of 885 K. Applications ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Indium Phosphide
Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende (crystal structure), zincblende") crystal structure, identical to that of gallium arsenide, GaAs and most of the List of semiconductor materials, III-V semiconductors. Manufacturing Indium phosphide can be prepared from the reaction of white phosphorus and indium iodide at 400 °C., also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium compound and phosphine. Applications The application fields of InP splits up into three main areas. It is used as the basis for optoelectronic components, high-speed electronics, and photovoltaics High-speed optoelectronics InP is used as a substrate for epitaxy, epitaxial optoelectronic devices based other semiconductors, such as indium gallium arsenide. The devices include pseudomorphic heterojunction bipolar transistors th ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Gallium Arsenide
Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a Zincblende (crystal structure), zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. History Gallium arsenide was first synthesized and studied by Victor Goldschmidt in 1926 by passing arsenic vapors mixed with hydrogen over gallium(III) oxide at 600 °C. The semiconductor properties of GaAs and other Compound semiconductor, III-V compounds were patented by Heinrich Welker at Siemens-Schuckert in 1951 and described in a 1952 publication. Commercial production of its monocrystals commenced in 1954, and more studies followed in the 195 ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
