InGaAsP
Indium gallium arsenide phosphide () is a quaternary compound semiconductor material, an alloy of gallium arsenide, gallium phosphide, indium arsenide, or indium phosphide. This compound has applications in photonic devices, due to the ability to tailor its band gap via changes in the alloy mole ratios, ''x'' and ''y''. Indium phosphide-based photonic integrated circuits, or PICs, commonly use alloys of to construct quantum wells, waveguides and other photonic structures, lattice matched to an InP substrate, enabling single-crystal epitaxial growth onto InP. Many devices operating in the near-infrared 1.55 μm wavelength window utilize this alloy, and are employed as optical components (such as laser A laser is a device that emits light through a process of optical amplification based on the stimulated emission of electromagnetic radiation. The word ''laser'' originated as an acronym for light amplification by stimulated emission of radi ... transmitters, p ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Quantum Well
A quantum well is a potential well with only discrete energy values. The classic model used to demonstrate a quantum well is to confine particles, which were initially free to move in three dimensions, to two dimensions, by forcing them to occupy a planar region. The effects of quantum confinement take place when the quantum well thickness becomes comparable to the de Broglie wavelength of the carriers (generally electrons and electron hole, holes), leading to energy levels called "energy subbands", i.e., the carriers can only have discrete energy values. The concept of quantum well was proposed in 1963 independently by Herbert Kroemer and by Zhores Alferov and R.F. Kazarinov.Zh. I. Alferov and R.F. Kazarinov, Authors Certificate 28448 (U.S.S.R) 1963. History The semiconductor quantum well was developed in 1970 by Leo Esaki, Esaki and Raphael Tsu, Tsu, who also invented synthetic superlattices. They suggested that a Heterojunction, heterostructure made up of alternating thin l ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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III-V Semiconductors
Semiconductor materials are nominally small band gap insulators. The defining property of a semiconductor material is that it can be compromised by doping it with impurities that alter its electronic properties in a controllable way. Because of their application in the computer and photovoltaic industry—in devices such as transistors, lasers, and solar cells—the search for new semiconductor materials and the improvement of existing materials is an important field of study in materials science. Most commonly used semiconductor materials are crystalline inorganic solids. These materials are classified according to the periodic table groups of their constituent atoms. Different semiconductor materials differ in their properties. Thus, in comparison with silicon, compound semiconductors have both advantages and disadvantages. For example, gallium arsenide (GaAs) has six times higher electron mobility than silicon, which allows faster operation; wider band gap, which allows op ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Quaternary Compound
In chemistry, a quaternary compound is a compound consisting of exactly four chemical elements. In another use of the term in organic chemistry, a quaternary compound is or has a cation consisting of a central positively charged atom with four substituents, especially organic (alkyl and aryl) groups, discounting hydrogen atoms. The best-known quaternary compounds are quaternary ammonium salts, having a nitrogen atom at the center. For example, in the following reaction, the nitrogen atom is said to be quaternized as it has gone from 3 to 4 substituents: :R3N + RCl -> R4N+Cl- Other examples include substituted phosphonium salts (), substituted arsonium salts () like arsenobetaine, as well as some arsenic-containing superconductors. Substituted stibonium () and bismuthonium salts () have also been described. See also *Binary compound *Ternary compound *Onium ion In chemistry, an onium ion is a cation formally obtained by the protonation of mononuclear parent hydride ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Photodetectors
Photodetectors, also called photosensors, are devices that detect light or other forms of electromagnetic radiation and convert it into an electrical signal. They are essential in a wide range of applications, from digital imaging and optical communication to scientific research and industrial automation. Photodetectors can be classified by their mechanism of detection, such as the photoelectric effect, photochemical reactions, or thermal effects, or by performance metrics like spectral response. Common types include photodiodes, phototransistors, and photomultiplier tubes, each suited to specific uses. Solar cells, which convert light into electricity, are also a type of photodetector. This article explores the principles behind photodetectors, their various types, applications, and recent advancements in the field. History The development of photodetectors began with the discovery of the photoelectric effect by Heinrich Hertz in 1887, later explained by Albert Einstein i ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Gallium Compounds
Gallium compounds are compounds containing the element gallium. These compounds are found primarily in the +3 oxidation state. The +1 oxidation state is also found in some compounds, although it is less common than it is for gallium's heavier congeners indium and thallium. For example, the very stable GaCl2 contains both gallium(I) and gallium(III) and can be formulated as GaIGaIIICl4; in contrast, the monochloride is unstable above 0 °C, disproportionating into elemental gallium and gallium(III) chloride. Compounds containing Ga–Ga bonds are true gallium(II) compounds, such as GaS (which can be formulated as Ga24+(S2−)2) and the dioxan complex Ga2Cl4(C4H8O2)2.Greenwood and Earnshaw, p. 240 There are also compounds of gallium with negative oxidation states, ranging from −5 to −1, most of these compounds being magnesium gallides (MgxGay). Aqueous chemistry Strong acids dissolve gallium, forming gallium(III) salts such as (gallium nitrate). Aqueous solutions o ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Indium Compounds
Indium is a chemical element; it has symbol In and atomic number 49. It is a silvery-white post-transition metal and one of the softest elements. Chemically, indium is similar to gallium and thallium, and its properties are largely intermediate between the two. It was discovered in 1863 by Ferdinand Reich and Hieronymous Theodor Richter by spectroscopic methods and named for the indigo blue line in its spectrum. Indium is used primarily in the production of flat-panel displays as indium tin oxide (ITO), a transparent and conductive coating applied to glass. It is also used in the semiconductor industry, in low-melting-point metal alloys such as solders and soft-metal high-vacuum seals. It is produced exclusively as a by-product during the processing of the ores of other metals, chiefly from sphalerite and other zinc sulfide ores. Indium has no biological role and its compounds are toxic when inhaled or injected into the bloodstream, although they are poorly absorbed foll ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Solar Cell Efficiency
Solar-cell efficiency is the portion of energy in the form of sunlight that can be converted via photovoltaics into electricity by the solar cell. The efficiency of the solar cells used in a photovoltaic system, in combination with latitude and climate, determines the annual energy output of the system. For example, a solar panel with 20% efficiency and an area of 1 m2 produces 200 kWh/yr at Standard Test Conditions if exposed to the Standard Test Condition solar irradiance value of 1000 W/m2 for 2.74 hours a day. Usually solar panels are exposed to sunlight for longer than this in a given day, but the solar irradiance is less than 1000 W/m2 for most of the day. A solar panel can produce more when the Sun is high in Earth's sky and produces less in cloudy conditions, or when the Sun is low in the sky. The Sun is lower in the sky in the winter. Two location dependent factors that affect solar PV yield are the dispersion and intensity of solar radiation. These ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Gallium Indium Arsenide Antimonide Phosphide
Gallium indium arsenide antimonide phosphide ( or GaInPAsSb) is a semiconductor material. Research has shown that GaInAsSbP can be used in the manufacture of mid-infrared light-emitting diodesRoom temperature midinfrared electroluminescence from GaInAsSbP light emitting diodes, A. Krier, V. M. Smirnov, P. J. Batty, V. I. Vasil’ev, G. S. Gagis, and V. I. Kuchinskii, Appl. Phys. Lett. vol. 90 pp. 211115 (2007) Lattice-matched GaInPAsSb/InAs structures for devices of infrared optoelectronics, M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin, V. V. Shustov, V. V. Kuznetsov and E. A. Kognovitskaya, Semiconductors vol. 36 num. 8 pp. 944-949 (2002) and thermophotovoltaic cells.Low Bandgap GaInAsSbP Pentanary Thermophotovoltaic Diodes, K. J. Cheetham, P. J. Carrington, N. B. Cook and A. Krier, Solar Energy Materials and Solar Cells, vol. 95 pp. 534-537 (2011) GaInAsSbP layers can be grown by heteroepitaxy on indium arsenide, ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Indium Gallium Phosphide
Indium gallium phosphide (InGaP), also called gallium indium phosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus. It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. It is used mainly in HEMT and HBT structures, but also for the fabrication of high efficiency solar cells used for space applications and, in combination with aluminium ( AlGaInP alloy) to make high brightness LEDs with orange-red, orange, yellow, and green colors. Some semiconductor devices such as EFluor Nanocrystal use InGaP as their core particle. Indium gallium phosphide is a solid solution of indium phosphide and gallium phosphide. Ga0.5In0.5P is a solid solution of special importance, which is almost lattice matched to GaAs. This allows, in combination with (AlxGa1−x)0.5In0.5, the growth of lattice matched quantum wells for red emitting semiconductor las ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Triple-junction Solar Cell
Multi-junction (MJ) solar cells are solar cells with multiple p–n junctions made of different semiconductor materials. Each material's p–n junction will produce electric current in response to different wavelengths of light. The use of multiple semiconducting materials allows the absorbance of a broader range of wavelengths, improving the cell's sunlight to electrical energy conversion efficiency. Traditional single-junction cells have a maximum theoretical efficiency of 33.16%. Theoretically, an infinite number of junctions would have a limiting efficiency of 86.8% under highly concentrated sunlight. As of 2024 the best lab examples of traditional crystalline silicon (c-Si) solar cells had efficiencies up to 27.1%, while lab examples of multi-junction cells have demonstrated performance over 46% under concentrated sunlight. Commercial examples of tandem cells are widely available at 30% under one-sun illumination, and improve to around 40% under concentrated sunlight. How ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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Fraunhofer Institute For Solar Energy Systems
The Fraunhofer Institute for Solar Energy Systems ISE (or Fraunhofer ISE) is an institute of the Fraunhofer-Gesellschaft. Located in Freiburg, Germany, the Institute performs applied scientific and engineering research and development for all areas of solar energy. Fraunhofer ISE has three external branches in Germany which carry out work on solar cell and semiconductor material development: the Laboratory and Service Center (LSC) in Gelsenkirchen, the Technology Center of Semiconductor Materials (THM) in Freiberg, and the Fraunhofer Center for Silicon Photovoltaics (CSP) in Halle. From 2006 to 2016 Eicke Weber was the director of Fraunhofer ISE. With over 1,100 employees, Fraunhofer ISE is the largest institute for applied solar energy research in Europe. The 2012 Operational Budget including investments was 74.3 million euro. History Fraunhofer ISE was founded in 1981 by Adolf Goetzberger in Freiburg, Germany. It was the first non-university establishment for applied solar ... [...More Info...]       [...Related Items...]     OR:     [Wikipedia]   [Google]   [Baidu]   |
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C Band (infrared)
In infrared optical communications, C-band (C for "conventional") refers to the wavelength range 1530–1565 nm, which corresponds to the amplification range of erbium doped fiber amplifiers ( EDFAs). article in rp-photonics (accessed Nov. 11 2010) The C-band is located around the absorption minimum in optical fiber
An optical fiber, or optical fibre, is a flexible glass or pl ...
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