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GDDR7 SDRAM
Graphics Double Data Rate 7 Synchronous Dynamic Random-Access Memory (GDDR7 SDRAM) is a type of synchronous graphics random-access memory (SGRAM) specified by the JEDEC Semiconductor Memory Standard, with a high bandwidth, "double data rate" interface, designed for use in graphics cards, game consoles, and high-performance computing. It is a type of GDDR SDRAM (graphics DDR SDRAM), and is the successor to GDDR6. History * At Samsung Tech Day 2022, Samsung announced GDDR7 as the successor of GDDR6X, which could deliver up to 36 GT/s. Samsung announced two months later that it would use PAM-3 signaling to achieve the highest transfer rate. * On March 8, 2023, Cadence announced the verification solution tool for preliminary GDDR7 SDRAM production. * On June 30, 2023, Micron announced that it will be manufactured using 1β node (equivalent to 12–10 nm process node), slated to release in H1 2024. * On July 18, 2023, Samsung announced the first generation of GDDR7, which can reach ...
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NVIDIA
Nvidia CorporationOfficially written as NVIDIA and stylized in its logo as VIDIA with the lowercase "n" the same height as the uppercase "VIDIA"; formerly stylized as VIDIA with a large italicized lowercase "n" on products from the mid 1990s to early-mid 2000s. Though unofficial, second letter capitalization of NVIDIA, i.e. nVidia, may be found within enthusiast communities and publications. ( ) is an American multinational technology company incorporated in Delaware and based in Santa Clara, California. It is a software and fabless company which designs graphics processing units (GPUs), application programming interface (APIs) for data science and high-performance computing as well as system on a chip units (SoCs) for the mobile computing and automotive market. Nvidia is a global leader in artificial intelligence hardware and software. Its professional line of GPUs are used in workstations for applications in such fields as architecture, engineering and construction, m ...
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Pulse-amplitude Modulation
Pulse-amplitude modulation (PAM) is a form of signal modulation where the message information is encoded in the amplitude of a series of signal pulses. It is an analog pulse modulation scheme in which the amplitudes of a train of carrier pulses are varied according to the sample value of the message signal. Demodulation is performed by detecting the amplitude level of the carrier at every single period. Types There are two types of pulse amplitude modulation: * In ''single polarity PAM'', a suitable fixed DC bias is added to the signal to ensure that all the pulses are positive. * In ''double polarity PAM'', the pulses are both positive and negative. Pulse-amplitude modulation is widely used in modulating signal transmission of digital data, with non-baseband applications having been largely replaced by pulse-code modulation, and, more recently, by pulse-position modulation. The number of possible pulse amplitudes in analog PAM is theoretically infinite. Digital PAM reduces ...
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Memory Scrubbing
Memory scrubbing consists of reading from each computer memory location, correcting bit errors (if any) with an error-correcting code ( ECC), and writing the corrected data back to the same location. Due to the high integration density of modern computer memory chips, the individual memory cell structures became small enough to be vulnerable to cosmic rays and/or alpha particle emission. The errors caused by these phenomena are called soft errors. Over 8% of DIMM modules experience at least one correctable error per year. This can be a problem for DRAM and SRAM based memories. The probability of a soft error at any individual memory bit is very small. However, together with the large amount of memory modern computersespecially serversare equipped with, and together with extended periods of uptime, the probability of soft errors in the total memory installed is significant. The information in an ECC memory is stored redundantly enough to correct single bit error per memory w ...
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Error Correction Code
In computing, telecommunication, information theory, and coding theory, an error correction code, sometimes error correcting code, (ECC) is used for controlling errors in data over unreliable or noisy communication channels. The central idea is the sender encodes the message with redundant information in the form of an ECC. The redundancy allows the receiver to detect a limited number of errors that may occur anywhere in the message, and often to correct these errors without retransmission. The American mathematician Richard Hamming pioneered this field in the 1940s and invented the first error-correcting code in 1950: the Hamming (7,4) code. ECC contrasts with error detection in that errors that are encountered can be corrected, not simply detected. The advantage is that a system using ECC does not require a reverse channel to request retransmission of data when an error occurs. The downside is that there is a fixed overhead that is added to the message, thereby requiring a ...
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Tom's Hardware
''Tom's Hardware'' is an online publication owned by Future plc and focused on technology. It was founded in 1996 by Thomas Pabst. It provides articles, news, price comparisons, videos and reviews on computer hardware and high technology. The site features coverage on CPUs, motherboards, RAM, PC cases, graphic cards, display technology, power supplies and displays, storage, smartphones, tablets, gaming, consoles, and computer peripherals. ''Tom's Hardware'' has a forum and featured blogs. History ''Tom's Hardware'' was founded in April 1996 as ''Tom's Hardware Guide'' in the United States by Thomas Pabst. It started using the domain tomshardware.com in September 1997 and was followed by several foreign language versions, including Italian, French, Finnish and Russian based on franchise agreements. While the initial testing labs were in Germany and California, much of Tom's Hardware's testing now occurs in New York and a facility in Ogden, Utah owned by its parent company. I ...
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Non-return-to-zero
In telecommunication, a non-return-to-zero (NRZ) line code is a binary code in which ones are represented by one significant condition, usually a positive voltage, while zeros are represented by some other significant condition, usually a negative voltage, with no other neutral or rest condition. For a given data signaling rate, i.e., bit rate, the NRZ code requires only half the baseband bandwidth required by the Manchester code (the passband bandwidth is the same). The pulses in NRZ have more energy than a return-to-zero (RZ) code, which also has an additional rest state beside the conditions for ones and zeros. When used to represent data in an asynchronous communication scheme, the absence of a neutral state requires other mechanisms for bit synchronization when a separate clock signal is not available. Since NRZ is not inherently a self-clocking signal, some additional synchronization technique must be used for avoiding bit slips; examples of such techniques are a ...
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Pulse-amplitude Modulation
Pulse-amplitude modulation (PAM) is a form of signal modulation where the message information is encoded in the amplitude of a series of signal pulses. It is an analog pulse modulation scheme in which the amplitudes of a train of carrier pulses are varied according to the sample value of the message signal. Demodulation is performed by detecting the amplitude level of the carrier at every single period. Types There are two types of pulse amplitude modulation: * In ''single polarity PAM'', a suitable fixed DC bias is added to the signal to ensure that all the pulses are positive. * In ''double polarity PAM'', the pulses are both positive and negative. Pulse-amplitude modulation is widely used in modulating signal transmission of digital data, with non-baseband applications having been largely replaced by pulse-code modulation, and, more recently, by pulse-position modulation. The number of possible pulse amplitudes in analog PAM is theoretically infinite. Digital PAM reduces ...
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14 Nm Process
The 14 nm process refers to the MOSFET technology node that is the successor to the 22nm (or 20nm) node. The 14nm was so named by the International Technology Roadmap for Semiconductors (ITRS). Until about 2011, the node following 22nm was expected to be 16nm. All 14nm nodes use FinFET (fin field-effect transistor) technology, a type of multi-gate MOSFET technology that is a non-planar evolution of planar silicon CMOS technology. Samsung Electronics taped out a 14 nm chip in 2014, before manufacturing 10 nm class NAND flash chips in 2013. The same year, SK Hynix began mass-production of 16nm NAND flash, and TSMC began 16nm FinFET production. The following year, Intel began shipping 14nm scale devices to consumers. History Background The basis for sub-20nm fabrication is the FinFET (Fin field-effect transistor), an evolution of the MOSFET transistor. FinFET technology was pioneered by Digh Hisamoto and his team of researchers at Hitachi Central Research Laboratory in 198 ...
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Integrated Circuit
An integrated circuit or monolithic integrated circuit (also referred to as an IC, a chip, or a microchip) is a set of electronic circuits on one small flat piece (or "chip") of semiconductor material, usually silicon. Transistor count, Large numbers of tiny MOSFETs (metal–oxide–semiconductor field-effect transistors) integrate into a small chip. This results in circuits that are orders of magnitude smaller, faster, and less expensive than those constructed of discrete electronic components. The IC's mass production capability, reliability, and building-block approach to integrated circuit design has ensured the rapid adoption of standardized ICs in place of designs using discrete transistors. ICs are now used in virtually all electronic equipment and have revolutionized the world of electronics. Computers, mobile phones and other home appliances are now inextricable parts of the structure of modern societies, made possible by the small size and low cost of ICs such as mode ...
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Epoxy Molding Compound
Epoxy is the family of basic components or cured end products of epoxy resins. Epoxy resins, also known as polyepoxides, are a class of reactive prepolymers and polymers which contain epoxide groups. The epoxide functional group is also collectively called ''epoxy''. The IUPAC name for an epoxide group is an oxirane. Epoxy resins may be reacted ( cross-linked) either with themselves through catalytic homopolymerisation, or with a wide range of co-reactants including polyfunctional amines, acids (and acid anhydrides), phenols, alcohols and thiols (usually called mercaptans). These co-reactants are often referred to as hardeners or curatives, and the cross-linking reaction is commonly referred to as curing. Reaction of polyepoxides with themselves or with polyfunctional hardeners forms a thermosetting polymer, often with favorable mechanical properties and high thermal and chemical resistance. Epoxy has a wide range of applications, including metal coatings, composites, use i ...
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10 Nm Process
In semiconductor fabrication, the International Technology Roadmap for Semiconductors (ITRS) defines the 10 nm process as the MOSFET technology node following the 14 nm node. 10 nm class denotes chips made using process technologies between 10 and 20 nm. All production 10 nm processes are based on FinFET (fin field-effect transistor) technology, a type of multi-gate MOSFET technology that is a non-planar evolution of planar silicon CMOS technology. Samsung first started their production of 10 nm-class chips in 2013 for their multi-level cell (MLC) flash memory chips, followed by their SoCs using their 10 nm process in 2016. TSMC began commercial production of 10 nm chips in 2016, and Intel later began production of 10nm chips in 2018. Since 2009, however, "node" has become a commercial name for marketing purposes that indicates new generations of process technologies, without any relation to gate length, metal pitch or gate pitch. For example, GlobalFoundrie ...
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Micron Technology
Micron Technology, Inc. is an American producer of computer memory and computer data storage including dynamic random-access memory, flash memory, and USB flash drives. It is headquartered in Boise, Idaho. Its consumer products, including the Ballistix line of memory modules, are marketed under the Crucial brand. Micron and Intel together created IM Flash Technologies, which produced NAND flash memory. It owned Lexar between 2006 and 2017. History 1978–1999 Micron was founded in Boise, Idaho, in 1978 by Ward Parkinson, Joe Parkinson, Dennis Wilson, and Doug Pitman as a semiconductor design consulting company. Startup funding was provided by local Idaho businessmen Tom Nicholson, Allen Noble, Rudolph Nelson, and Ron Yanke. Later it received funding from Idaho billionaire J. R. Simplot, whose fortune was made in the potato business. In 1981, the company moved from consulting to manufacturing with the completion of its first wafer fabrication unit ("Fab 1"), producing ...
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