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EPROM
An EPROM (rarely EROM), or erasable programmable read-only memory, is a type of programmable read-only memory (PROM) integrated circuit, chip that retains its data when its power supply is switched off. Computer memory that can retrieve stored data after a power supply has been turned off and back on is called non-volatile. It is an array of floating-gate transistors individually programmed by an electronic device that supplies higher voltages than those normally used in digital circuits. Once programmed, an EPROM can be erased by exposing it to strong ultraviolet (UV) light source (such as from a mercury-vapor lamp). EPROMs are easily recognizable by the transparent fused quartz (or on later models' resin) window on the top of the package, through which the silicon chip is visible, and which permits exposure to ultraviolet light during erasing. It was invented by Dov Frohman in 1971. Operation Development of the EPROM memory cell (computing), memory cell started with investi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Read-only Memory
Read-only memory (ROM) is a type of non-volatile memory used in computers and other electronic devices. Data stored in ROM cannot be electronically modified after the manufacture of the memory device. Read-only memory is useful for storing software that is rarely changed during the life of the system, also known as firmware. Software applications, such as video games, for programmable devices can be distributed as ROM cartridge, plug-in cartridges containing ROM. Strictly speaking, ''read-only memory'' refers to hard-wired memory, such as diode matrix or a #Solid-state ROM, mask ROM integrated circuit (IC), that cannot be electronically changed after manufacture. Although discrete circuits can be altered in principle, through the addition of Jump wire, bodge wires and the removal or replacement of components, ICs cannot. Correction of errors, or updates to the software, require new devices to be manufactured and to replace the installed device. Floating-gate ROM semiconductor ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Eprom
An EPROM (rarely EROM), or erasable programmable read-only memory, is a type of programmable read-only memory (PROM) integrated circuit, chip that retains its data when its power supply is switched off. Computer memory that can retrieve stored data after a power supply has been turned off and back on is called non-volatile. It is an array of floating-gate transistors individually programmed by an electronic device that supplies higher voltages than those normally used in digital circuits. Once programmed, an EPROM can be erased by exposing it to strong ultraviolet (UV) light source (such as from a mercury-vapor lamp). EPROMs are easily recognizable by the transparent fused quartz (or on later models' resin) window on the top of the package, through which the silicon chip is visible, and which permits exposure to ultraviolet light during erasing. It was invented by Dov Frohman in 1971. Operation Development of the EPROM memory cell (computing), memory cell started with investi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Non-volatile
Non-volatile memory (NVM) or non-volatile storage is a type of computer memory that can retain stored information even after power is removed. In contrast, volatile memory needs constant power in order to retain data. Non-volatile memory typically refers to storage in memory chips, which store data in floating-gate memory cells consisting of floating-gate MOSFETs ( metal–oxide–semiconductor field-effect transistors), including flash memory storage such as NAND flash and solid-state drives (SSD). Other examples of non-volatile memory include read-only memory (ROM), EPROM (erasable programmable ROM) and EEPROM (electrically erasable programmable ROM), ferroelectric RAM, most types of computer data storage devices (e.g. disk storage, hard disk drives, optical discs, floppy disks, and magnetic tape), and early computer storage methods such as punched tape and cards. Overview Non-volatile memory is typically used for the task of secondary storage or long-term p ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Memory Cell (computing)
The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 (high voltage level) and reset to store a logic 0 (low voltage level). Its value is maintained/stored until it is changed by the set/reset process. The value in the memory cell can be accessed by reading it. Over the history of computing, different memory cell architectures have been used, including core memory and bubble memory. Today, the most common memory cell architecture is MOS memory, which consists of metal–oxide–semiconductor (MOS) memory cells. Modern random-access memory (RAM) uses MOS field-effect transistors (MOSFETs) as flip-flops, along with MOS capacitors for certain types of RAM. The SRAM ( static RAM) memory cell is a type of flip-flop circuit, typically implemented using MOSFETs. These require very low power to maintain the stored value when not being accessed. A ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Floating-gate Transistor
The floating-gate MOSFET (FGMOS), also known as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate is electrically isolated, creating a floating node in direct current, and a number of secondary gates or inputs are deposited above the floating gate (FG) and are electrically isolated from it. These inputs are only capacitively connected to the FG. Since the FG is surrounded by highly resistive material, the charge contained in it remains unchanged for long periods of time, typically longer than 10 years in modern devices. Usually Fowler-Nordheim tunneling and hot-carrier injection mechanisms are used to modify the amount of charge stored in the FG. The FGMOS is commonly used as a floating-gate memory cell, the digital storage element in EPROM, EEPROM and flash memory technologies. Other uses of the FGMOS include a neuronal computational element in neural networks, analog storage ele ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Dov Frohman
Dov Frohman (, also Dov Frohman-Bentchkowsky; born March 28, 1939) is an Israeli electrical engineer and business executive. A former vice president of Intel Corporation, he is the inventor of the erasable programmable read only memory (EPROM) and the founder and first general manager of Intel Israel. He is also the author (with Robert Howard) of ''Leadership the Hard Way'' (Jossey-Bass, 2008). Biography Dov Frohman was born in March 1939 in Amsterdam, five months before the start of World War II. His parents were Abraham and Feijga Frohman, Polish Jews who had emigrated to the Netherlands in the early 1930s to escape rising anti-Semitism in Poland. In 1942, after the German invasion of the Low Countries and as the Nazi grip on Holland’s Jewish community tightened, his parents decided to give their child to acquaintances in the Dutch resistance who placed him with the Van Tilborghs, an orthodox Christian farming family that lived in the village of Sprang-Capelle in the regio ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Floating-gate
The floating-gate MOSFET (FGMOS), also known as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate is electrically isolated, creating a floating node in direct current, and a number of secondary gates or inputs are deposited above the floating gate (FG) and are electrically isolated from it. These inputs are only capacitively connected to the FG. Since the FG is surrounded by highly resistive material, the charge contained in it remains unchanged for long periods of time, typically longer than 10 years in modern devices. Usually Fowler-Nordheim tunneling and hot-carrier injection mechanisms are used to modify the amount of charge stored in the FG. The FGMOS is commonly used as a floating-gate memory cell, the digital storage element in EPROM, EEPROM and flash memory technologies. Other uses of the FGMOS include a neuronal computational element in neural networks, analog storage el ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Programmable Read-only Memory
A programmable read-only memory (PROM) is a form of digital memory where the contents can be changed once after manufacture of the device. The data is then permanent and cannot be changed. It is one type of read-only memory (ROM). PROMs are used in digital electronic devices to store permanent data, usually low level programs such as firmware or microcode. The key difference from a standard Read-only memory, ROM is that the data is written into a ROM during manufacture, while with a PROM the data is programmed into them after manufacture. Thus, ROMs tend to be used only for large production runs with well-verified data. PROMs may be used where the volume required does not make a factory-programmed ROM economical, or during development of a system that may ultimately be converted to ROMs in a mass produced version. PROMs are manufactured blank and, depending on the technology, can be programmed at wafer, final test, or in system. Blank PROM chips are programmed by plugging them int ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Fused Quartz
Fused quartz, fused silica or quartz glass is a glass consisting of almost pure silica (silicon dioxide, SiO2) in amorphous (non-crystalline) form. This differs from all other commercial glasses, such as soda-lime glass, lead glass, or borosilicate glass, in which other ingredients are added which change the glasses' optical and physical properties, such as lowering the melt temperature, the spectral transmission range, or the mechanical strength. Fused quartz, therefore, has high working and melting temperatures, making it difficult to form and less desirable for most common applications, but is much stronger, more chemically resistant, and exhibits lower thermal expansion, making it more suitable for many specialized uses such as lighting and scientific applications. The terms ''fused quartz'' and ''fused silica'' are used interchangeably but can refer to different manufacturing techniques, resulting in different trace impurities. However fused quartz, being in the glassy s ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Dawon Kahng
Dawon Kahng (; May 4, 1931 – May 13, 1992) was a Korean-American electrical engineer and inventor, known for his work in solid-state electronics. He is best known for inventing the MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor), along with his colleague Mohamed Atalla, in 1959. Kahng and Atalla developed both the PMOS and NMOS processes for MOSFET semiconductor device fabrication. The MOSFET is the most widely used type of transistor, and the basic element in most modern electronic equipment. Kahng and Atalla later proposed the concept of the MOS integrated circuit, and they did pioneering work on Schottky diodes and nanolayer-base transistors in the early 1960s. Kahng then invented the floating-gate MOSFET (FGMOS) with Simon Min Sze in 1967. Kahng and Sze proposed that FGMOS could be used as floating-gate memory cells for non-volatile memory (NVM) and reprogrammable read-only memory (ROM), which became the basis for EPROM (eras ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
