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BCDMOS
BCDMOS is a complex circuit composed of bipolar, CMOS and DMOS devices. BCDMOS technology allows to drive discrete high voltage components (several hundred of operating voltage) at high frequency while keeping high integration with technology nodes down to 40 nm or 22 nm. Many applications still use process node of 0.35μm in 2023. Application of this type of circuits are find in automotive, audio amplifier, RF, industry, silicon photomultiplier ( SiPM). History SGS (now STmicroelectronics) invented the BCD (bipolar-CMOS-DMOS) technology - revolutionary at the time - in 1985 and has continually developed it ever since. BCD is a family of silicon processes, each of which combines the strengths of three different process technologies onto a single chip. Features According to Maxim website, it is an innovative process characteristics that provides the following features: # high break-down voltage but small transistors, # quite low on-resistance, which is important fo ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electronic Circuit
An electronic circuit is composed of individual electronic components, such as resistors, transistors, capacitors, inductors and diodes, connected by conductive wires or Conductive trace, traces through which electric current can flow. It is a type of electrical circuit. For a circuit to be referred to as ''electronic'', rather than ''electrical'', generally at least one active component must be present. The combination of components and wires allows various simple and complex operations to be performed: signals can be amplified, computations can be performed, and data can be moved from one place to another. Circuits can be constructed of discrete components connected by individual pieces of wire, but today it is much more common to create interconnections by photolithographic techniques on a laminated Substrate (semiconductor), substrate (a printed circuit board or PCB) and solder the components to these interconnections to create a finished circuit. In an integrated circuit or ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Bipolar Junction Transistor
A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor (FET), uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current between the remaining two terminals, making the device capable of amplification or switching. BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material. The junctions can be made in several different ways, such as changing the doping of the semiconductor material as it is grown, by depositing metal pellets to form alloy junctions, or by such methods as diffusion of n-type and p-type doping substances into the crystal. The superior predictability and performance of junction transistors quickly displaced the original point-contact transistor. Diffused trans ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
CMOS
Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss ", , ) is a type of MOSFET, metal–oxide–semiconductor field-effect transistor (MOSFET) semiconductor device fabrication, fabrication process that uses complementary and symmetrical pairs of p-type semiconductor, p-type and n-type semiconductor, n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including Nonvolatile BIOS memory, CMOS BIOS), and other digital logic circuits. CMOS technology is also used for analog circuits such as image sensors (CMOS sensors), data conversion, data converters, RF circuits (RF CMOS), and highly integrated transceivers for many types of communication. In 1948, Bardeen and Brattain patented an insulated-gate transistor (IGFET) with an inversion layer. Bardeen's concept forms the basis of CMOS technology today. The CMOS process was presented by Fairchild Semico ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
DMOS
upright=1.3, Two power MOSFETs in amperes">A in the ''on'' state, dissipating up to about 100 watt">W and controlling a load of over 2000 W. A matchstick is pictured for scale. In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The term ''metal–insulator–semiconductor field-effect transistor'' (''MISFET'') is almost synonymous with ''MOSFET''. Another near-synonym is ''insulated-gate field-effect transistor'' (''IGFET''). The main advantage of a MOSFET is that it requires almost no input current to control the load current under steady-state or low-frequency conditions, e ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
IEEE
The Institute of Electrical and Electronics Engineers (IEEE) is an American 501(c)(3) organization, 501(c)(3) public charity professional organization for electrical engineering, electronics engineering, and other related disciplines. The IEEE has a corporate office in New York City and an operations center in Piscataway, New Jersey. The IEEE was formed in 1963 as an amalgamation of the American Institute of Electrical Engineers and the Institute of Radio Engineers. History The IEEE traces its founding to 1884 and the American Institute of Electrical Engineers. In 1912, the rival Institute of Radio Engineers was formed. Although the AIEE was initially larger, the IRE attracted more students and was larger by the mid-1950s. The AIEE and IRE merged in 1963. The IEEE is headquartered in New York City, but most business is done at the IEEE Operations Center in Piscataway, New Jersey, opened in 1975. The Australian Section of the IEEE existed between 1972 and 1985, after which it s ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Automotive Electronics
Automotive electronics are electronic systems used in vehicles, including engine management, ignition, radio, carputers, telematics, in-car entertainment systems, and others. Ignition, engine and transmission electronics are also found in trucks, motorcycles, off-road vehicles, and other internal combustion powered machinery such as forklifts, tractors and excavators. Related elements for control of relevant electrical systems are also found on hybrid vehicles and electric cars. Electronic systems have become an increasingly large component of the cost of an automobile, from only around 1% of its value in 1950 to around 30% in 2010. Modern electric cars rely on power electronics for the main propulsion motor control, as well as managing the battery system. Future autonomous cars will rely on powerful computer systems, an array of sensors, networking, and satellite navigation, all of which will require electronics. History The earliest electronic systems available as fa ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Radio Frequency
Radio frequency (RF) is the oscillation rate of an alternating electric current or voltage or of a magnetic, electric or electromagnetic field or mechanical system in the frequency range from around to around . This is roughly between the upper limit of audio frequencies that humans can hear (though these are not electromagnetic) and the lower limit of infrared frequencies, and also encompasses the microwave range. These are the frequencies at which energy from an oscillating current can radiate off a conductor into space as radio waves, so they are used in radio technology, among other uses. Different sources specify different upper and lower bounds for the frequency range. Electric current Electric currents that oscillate at radio frequencies (RF currents) have special properties not shared by direct current or lower audio frequency alternating current, such as the 50 or 60 Hz current used in electrical power distribution. * Energy from RF currents in conduct ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Silicon Photomultiplier
In solid-state electronics, silicon photomultipliers (SiPMs) are single-photon-sensitive devices based on pixels of single-photon avalanche diodes (SPADs) implemented on common silicon substrate. The dimension of each single avalanche diode can vary from 10 to 100 micrometres, with a typical density of up to 1,000 pixels/mm2. Every avalanche diode in a SiPM operates in Geiger mode and is coupled with the others by a metal or polysilicon quenching resistor. Although the device works in digital/switching mode, most SiPMs are analog devices because the microcells are read in parallel, making it possible to generate signals with a dynamic range from a single photon to 1000 photons for a device with just a square-millimeter area. More advanced readout schemes are used for lidar applications. The supply voltage () depends on the APD technology used and typically varies between 20 V and 100 V, thus being from 15 to 75 times lower than the voltage required for traditional photomultiplie ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
STmicroelectronics
STMicroelectronics Naamloze vennootschap, NV (commonly referred to as ST or STMicro) is a European multinational corporation, multinational semiconductor contract manufacturing and design company. It is the largest of such companies in Europe. It was founded in 1987 from the merger of two state-owned semiconductor corporations: ''Thomson Semiconducteurs'' of United States/France and ''SGS Microelettronica'' of Italy. The company is incorporated in the Netherlands and headquartered in Plan-les-Ouates, Switzerland. Its shares are traded on Euronext Paris, the Borsa Italiana and the New York Stock Exchange. History ST was formed in 1987 by the merger of two government-owned semiconductor companies: Italian SGS Microelettronica (where SGS stands for ''Società Generale Semiconduttori'', "General Semiconductor Company"), and French ''Thomson Semiconducteurs'', the semiconductor arm of Thomson SA, Thomson. SGS Microelettronica originated in 1972 from a previous merger of two compan ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Voltage
Voltage, also known as (electrical) potential difference, electric pressure, or electric tension, is the difference in electric potential between two points. In a Electrostatics, static electric field, it corresponds to the Work (electrical), work needed per unit of Electric charge, charge to move a positive Test particle#Electrostatics, test charge from the first point to the second point. In the SI unit, International System of Units (SI), the SI derived unit, derived unit for voltage is the ''volt'' (''V''). The voltage between points can be caused by the build-up of electric charge (e.g., a capacitor), and from an electromotive force (e.g., electromagnetic induction in a Electric generator, generator). On a macroscopic scale, a potential difference can be caused by electrochemical processes (e.g., cells and batteries), the pressure-induced piezoelectric effect, and the thermoelectric effect. Since it is the difference in electric potential, it is a physical Scalar (physics ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Transistor
A transistor is a semiconductor device used to Electronic amplifier, amplify or electronic switch, switch electrical signals and electric power, power. It is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminal (electronics), terminals for connection to an electronic circuit. A voltage or Electric current, current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more in miniature form are found embedded in integrated circuits. Because transistors are the key active components in practically all modern electronics, many people consider them one of the 20th century's greatest inventions. Physicist Julius Edgar Lilienfeld proposed the concept of a field-effect transisto ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Field-effect Transistor
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the current through a semiconductor. It comes in two types: junction FET (JFET) and metal-oxide-semiconductor FET (MOSFET). FETs have three terminals: ''source'', ''gate'', and ''drain''. FETs control the current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use either electrons (n-channel) or holes (p-channel) as charge carriers in their operation, but not both. Many different types of field effect transistors exist. Field effect transistors generally display very high input impedance at low frequencies. The most widely used field-effect transistor is the MOSFET (metal–oxide–semiconductor field-effect transistor). History The concept of a field-effect transistor (FET) was first patented by the Austr ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
