Hafnium(IV) oxide is the inorganic compound with the formula . Also known as hafnium dioxide or hafnia, this colourless solid is one of the most common and stable compounds of

hafnium Hafnium is a chemical element with the symbol Hf and atomic number 72. A lustrous, silvery gray, tetravalent transition metal, hafnium chemically resembles zirconium and is found in many zirconium minerals. Its existence was predicted by Dmitri M ...

. It is an electrical insulator with a band gap of 5.3~5.7 eV. Hafnium dioxide is an intermediate in some processes that give hafnium metal. Hafnium(IV) oxide is quite inert. It reacts with strong acids such as concentrated

sulfuric acid Sulfuric acid (American spelling and the preferred IUPAC name) or sulphuric acid ( Commonwealth spelling), known in antiquity as oil of vitriol, is a mineral acid composed of the elements sulfur, oxygen and hydrogen, with the molecular fo ...

and with strong bases. It dissolves slowly in hydrofluoric acid to give fluorohafnate anions. At elevated temperatures, it reacts with

chlorine Chlorine is a chemical element with the symbol Cl and atomic number 17. The second-lightest of the halogens, it appears between fluorine and bromine in the periodic table and its properties are mostly intermediate between them. Chlorine i ...

in the presence of

graphite Graphite () is a crystalline form of the element carbon. It consists of stacked layers of graphene. Graphite occurs naturally and is the most stable form of carbon under standard conditions. Synthetic and natural graphite are consumed on la ...

or carbon tetrachloride to give

hafnium tetrachloride Hafnium(IV) chloride is the inorganic compound with the formula HfCl4. This colourless solid is the precursor to most hafnium organometallic compounds. It has a variety of highly specialized applications, mainly in materials science and as a catal ...

Structure

Hafnia typically adopts the same structure as

zirconia Zirconium dioxide (), sometimes known as zirconia (not to be confused with zircon), is a white crystalline oxide of zirconium. Its most naturally occurring form, with a monoclinic crystalline structure, is the mineral baddeleyite. A dopant ...

(ZrO₂). Unlike TiO₂, which features six-coordinate Ti in all phases, zirconia and hafnia consist of seven-coordinate metal centres. A variety of other crystalline phases have been experimentally observed, including cubic fluorite (Fmm), tetragonal (P4₂/nmc), monoclinic (P2₁/c) and orthorhombic (Pbca and Pnma). It is also known that hafnia may adopt two other orthorhombic metastable phases (space group Pca2₁ and Pmn2₁) over a wide range of pressures and temperatures, presumably being the sources of the ferroelectricity observed in thin films of hafnia. Thin films of hafnium oxides deposited by atomic layer deposition are usually crystalline. Because

semiconductor A semiconductor is a material which has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Its resistivity falls as its temperature rises; metals behave in the opposite way ...

devices benefit from having amorphous films present, researchers have alloyed hafnium oxide with aluminum or silicon (forming hafnium silicates), which have a higher crystallization temperature than hafnium oxide.

Applications

Hafnia is used in optical coatings, and as a high-κ dielectric in DRAM capacitors and in advanced metal-oxide-semiconductor devices. Hafnium-based oxides were introduced by

Intel Intel Corporation is an American multinational corporation and technology company headquartered in Santa Clara, California. It is the world's largest semiconductor chip manufacturer by revenue, and is one of the developers of the x86 ser ...

in 2007 as a replacement for

silicon oxide Silicon oxide may refer to either of the following: * Silicon dioxide or quartz, SiO2, very well characterized *Silicon monoxide Silicon monoxide is the chemical compound with the formula SiO where silicon is present in the oxidation state +2. In ...

as a gate insulator in field-effect transistors. The advantage for transistors is its high dielectric constant: the dielectric constant of HfO₂ is 4–6 times higher than that of SiO₂. The dielectric constant and other properties depend on the deposition method, composition and microstructure of the material. Hafnium oxide (as well as doped and oxygen-deficient hafnium oxide) attracts additional interest as a possible candidate for resistive-switching memories and CMOS-compatible ferroelectric field effect transistors ( FeFET memory) and memory chips. Because of its very high melting point, hafnia is also used as a refractory material in the insulation of such devices as thermocouples, where it can operate at temperatures up to 2500 °C. Multilayered films of hafnium dioxide, silica, and other materials have been developed for use in passive cooling of buildings. The films reflect sunlight and radiate heat at wavelengths that pass through Earth's atmosphere, and can have temperatures several degrees cooler than surrounding materials under the same conditions.

References

{{oxygen compounds Hafnium compounds High-κ dielectrics Transition metal oxides Ferroelectric materials