Indium arsenide antimonide phosphide () is a

semiconductor material A semiconductor is a material which has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Its resistivity falls as its temperature rises; metals behave in the opposite way. ...

. InAsSbP has been used as blocking layers for semiconductor

laser A laser is a device that emits light through a process of optical amplification based on the stimulated emission of electromagnetic radiation. The word "laser" is an acronym for "light amplification by stimulated emission of radiation". The fi ...

structures, as well as for the mid-infrared

light-emitting diode A light-emitting diode (LED) is a semiconductor device that emits light when current flows through it. Electrons in the semiconductor recombine with electron holes, releasing energy in the form of photons. The color of the light (co ...

s and lasers, photodetectors and thermophotovoltaic cells. InAsSbP layers can be grown by

heteroepitaxy Epitaxy refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epit ...

on indium arsenide,

gallium antimonide Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family. It has a lattice constant of about 0.61 nm. It has a band gap of 0.67 eV. History The intermetallic compound GaSb was first prepared in 1926 by V ...

and other materials.

References

III-V semiconductors Indium compounds Arsenides Antimonides Phosphides III-V compounds {{CMP-stub

See also

References