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Aluminium Gallium Indium Phosphide
Aluminium gallium indium phosphide (, also AlInGaP, InGaAlP, GaInP, etc.) is a semiconductor material that provides a platform for the development of novel multi-junction photovoltaics and optoelectronic devices, as it spans a direct bandgap from deep ultraviolet to infrared. AlGaInP is used in manufacture of light-emitting diodes of high-brightness red, orange, green, and yellow color, to form the heterostructure emitting light. It is also used to make diode lasers. Formation AlGaInP layer is often grown by heteroepitaxy on gallium arsenide or gallium phosphide in order to form a quantum well structure. Heteroepitaxy is a kind of epitaxy performed with materials that are different from each other. In heteroepitaxy, a crystalline film grows on a crystalline substrate or film of a different material. This technology is often used to grow crystalline films of materials for which single crystals cannot 1D view. Another example of heteroepitaxy is gallium nitride (GaN) on sapphire ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Cubic Crystal System
In crystallography, the cubic (or isometric) crystal system is a crystal system where the Crystal_structure#Unit_cell, unit cell is in the shape of a cube. This is one of the most common and simplest shapes found in crystals and minerals. There are three main varieties of these crystals: *Primitive cubic (abbreviated ''cP'' and alternatively called simple cubic) *Body-centered cubic (abbreviated ''cI'' or bcc) *Face-centered cubic (abbreviated ''cF'' or fcc, and alternatively called Close-packing_of_equal_spheres, ''cubic close-packed'' or ccp) Each is subdivided into other variants listed below. Although the ''unit cells'' in these crystals are conventionally taken to be cubes, the primitive_cell, primitive unit cells often are not. Bravais lattices The three Bravais lattices in the cubic crystal system are: The primitive cubic lattice (cP) consists of one Lattice_(group), lattice point on each corner of the cube; this means each simple cubic unit cell has in total one latt ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Indium Gallium Phosphide
Indium gallium phosphide (InGaP), also called gallium indium phosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus. It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. It is used mainly in HEMT and HBT structures, but also for the fabrication of high efficiency solar cells used for space applications and, in combination with aluminium (AlGaInP alloy) to make high brightness LEDs with orange-red, orange, yellow, and green colors. Some semiconductor devices such as EFluor Nanocrystal use InGaP as their core particle. Indium gallium phosphide is a solid solution of indium phosphide and gallium phosphide. Ga0.5In0.5P is a solid solution of special importance, which is almost lattice matched to GaAs. This allows, in combination with (AlxGa1−x)0.5In0.5, the growth of lattice matched quantum wells for red emitting semiconductor laser ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Indium Phosphide
Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors. Manufacturing Indium phosphide can be prepared from the reaction of white phosphorus and indium iodide at 400 °C., also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium compound and phosphine. Uses InP is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. It was used with indium gallium arsenide to make a record breaking pseudomorphic heterojunction bipolar transistor that could operate at 604 GHz. It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes. The company Infinera uses indium phosphide as its major techn ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
MOVPE
Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition. This takes place not in vacuum, but from the gas phase at moderate pressures (10 to 760 Torr). As such, this technique is preferred for the formation of devices incorporating thermodynamically metastable alloys, and it has become a major process in the manufacture of optoelectronics, such as Light-emitting diodes. It was invented in 1968 at North American Aviation (later Rockwell International) Science Center by Harold M. Manasevit. Basic principles In MOCVD ultrapure precursor gases are injected into a reactor, ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Phosphine
Phosphine (IUPAC name: phosphane) is a colorless, flammable, highly toxic compound with the chemical formula , classed as a pnictogen hydride. Pure phosphine is odorless, but technical grade samples have a highly unpleasant odor like rotting fish, due to the presence of substituted phosphine and diphosphane (). With traces of present, is spontaneously flammable in air ( pyrophoric), burning with a luminous flame. Phosphine is a highly toxic respiratory poison, and is immediately dangerous to life or health at 50 ppm. Phosphine has a trigonal pyramidal structure. Phosphines are compounds that include and the organophosphines, which are derived from by substituting one or more hydrogen atoms with organic groups. They have the general formula . Phosphanes are saturated phosphorus hydrides of the form , such as triphosphane. Phosphine, PH3, is the smallest of the phosphines and the smallest of the phosphanes. History Philippe Gengembre (1764–1838), a student of Lavois ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Trimethylindium
Trimethylindium, often abbreviated to TMI or TMIn, is the organoindium compound with the formula In(CH3)3. It is a colorless, pyrophoric solid. Unlike trimethylaluminium, but akin to trimethylgallium, TMI is monomeric. Preparation TMI is prepared by the reaction of indium trichloride with methyl lithium. : InCl3 + 3LiMe → Me3In.OEt2 + 3LiCl Properties Compared to trimethylaluminium and trimethylgallium, InMe3 is a weaker Lewis acid. It forms adducts with secondary amines and phosphines. A complex with the heterocyclic triazine ligand (PriNCH2)3 forms a complex with 6-coordinate In, where the C-In-C angles are 114°-117° with three long bonds to the tridentate ligand with N-In-N angles of 48.6° and long In-N bonds of 278 pm. Structure In the gaseous state InMe3 is monomeric, with a trigonal planar structure, and in benzene solution it is tetrameric.''CVD of compound semiconductors, Precursor Synthesis, Development and Applications'', Anthony C. Jones, Paul O'Brien, John Wi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Trimethylgallium
Trimethylgallium, often abbreviated to TMG or TMGa, is the organogallium compound with the formula Ga(CH3)3. It is a colorless, pyrophoric liquid. Unlike trimethylaluminium, TMG adopts a monomeric structure. When examined in detail, the monomeric units are clearly linked by multiple weak Ga---C interactions, reminiscent of the situation for trimethylindium. Preparation Two forms of TMG are typically investigated: Lewis base adducts or TMG itself. All are prepared by reactions of gallium trichloride with various methylating agents. When the methylation is conducted with methylmagnesium iodide in diethyl ether, the product is the poorly volatile diethyl ether adduct is produced. The ether ligand is not readily lost, although it may be displaced with liquid ammonia. When the alkylation is conducted with methyl lithium in the presence of a tertiary phosphine the air-stable phosphine adduct is obtained: : Heating the solid phosphine adduct under vacuum liberates the base-free TMG: ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Indium Gallium Nitride
Indium gallium nitride (InGaN, ) is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN). It is a ternary group III/group V direct bandgap semiconductor. Its bandgap can be tuned by varying the amount of indium in the alloy. InxGa1−xN has a direct bandgap span from the infrared (0.69 eV) for InN to the ultraviolet (3.4 eV) of GaN. The ratio of In/Ga is usually between 0.02/0.98 and 0.3/0.7. Applications LEDs Indium gallium nitride is the light-emitting layer in modern blue and green LEDs and often grown on a GaN buffer on a transparent substrate as, e.g. sapphire or silicon carbide. It has a high heat capacity and its sensitivity to ionizing radiation is low (like other group III nitrides), making it also a potentially suitable material for solar photovoltaic devices, specifically for arrays for satellites. It is theoretically predicted that spinodal decomposition of indium nitride should occur for compositions between 15% and 85%, leadi ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Optical Pumping
Optical pumping is a process in which light is used to raise (or "pump") electrons from a lower energy level in an atom or molecule to a higher one. It is commonly used in laser construction to pump the active laser medium so as to achieve population inversion. The technique was developed by the 1966 Nobel Prize winner Alfred Kastler in the early 1950s. Page 56. Optical pumping is also used to cyclically pump electrons bound within an atom or molecule to a well-defined quantum state. For the simplest case of coherent two-level optical pumping of an atomic species containing a single outer-shell electron, this means that the electron is coherently pumped to a single hyperfine sublevel (labeled m_F\!), which is defined by the polarization of the pump laser along with the quantum selection rules. Upon optical pumping, the atom is said to be ''oriented'' in a specific m_F\! sublevel, however, due to the cyclic nature of optical pumping, the bound electron will actually be undergoin ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Solar Cell Efficiency
Solar-cell efficiency refers to the portion of energy in the form of sunlight that can be converted via photovoltaics into electricity by the solar cell. The efficiency of the solar cells used in a photovoltaic system, in combination with latitude and climate, determines the annual energy output of the system. For example, a solar panel with 20% efficiency and an area of 1 m2 will produce 200 kWh/yr at Standard Test Conditions if exposed to the Standard Test Condition solar irradiance value of 1000 W/m2 for 2.74 hours a day. Usually solar panels are exposed to sunlight for longer than this in a given day, but the solar irradiance is less than 1000 W/m2 for most of the day. A solar panel can produce more when the sun is high in the sky and will produce less in cloudy conditions or when the sun is low in the sky, usually the sun is lower in the sky in the winter. Two location dependant factors that affect solar PV efficiency are the dispersion and intensity ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
