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Gallium antimonide (GaSb) is a
semiconducting A semiconductor is a material which has an electrical resistivity and conductivity, electrical conductivity value falling between that of a electrical conductor, conductor, such as copper, and an insulator (electricity), insulator, such as glas ...
compound of
gallium Gallium is a chemical element with the symbol Ga and atomic number 31. Discovered by French chemist Paul-Émile Lecoq de Boisbaudran in 1875, Gallium is in group 13 of the periodic table and is similar to the other metals of the group (aluminiu ...
and
antimony Antimony is a chemical element with the symbol Sb (from la, stibium) and atomic number 51. A lustrous gray metalloid, it is found in nature mainly as the sulfide mineral stibnite (Sb2S3). Antimony compounds have been known since ancient time ...
of the III-V family. It has a
lattice constant A lattice constant or lattice parameter is one of the physical dimensions and angles that determine the geometry of the unit cells in a crystal lattice, and is proportional to the distance between atoms in the crystal. A simple cubic crystal has o ...
of about 0.61 nm. It has a band gap of 0.67 eV.


History

The intermetallic compound GaSb was first prepared in 1926 by
Victor Goldschmidt Victor Moritz Goldschmidt (27 January 1888 in Zürich – 20 March 1947 in Oslo) was a Norwegian mineralogist considered (together with Vladimir Vernadsky) to be the founder of modern geochemistry and crystal chemistry, developer of the Golds ...
, who directly combined the elements under an inert gas atmosphere and reported on GaSb's lattice constant, which has since been revised. Goldschmidt also synthesized
gallium phosphide Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.24 eV at room temperature. Impure polycrystalline material has the appearance of pale orange or grayish pieces. Undoped single ...
and
gallium arsenide Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a Zincblende (crystal structure), zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monoli ...
. The Ga-Sb phase equilibria was investigated in 1955 by Koster and by Greenfield.Greenfield, I. G.; Smith, R. L., ''Trans. AIME'' 203, 351 (1955).


Applications

GaSb can be used for
Infrared detector An infrared detector is a detector that reacts to infrared (IR) radiation. The two main types of detectors are thermal and photonic (photodetectors). The thermal effects of the incident IR radiation can be followed through many temperature depen ...
s,
infrared Infrared (IR), sometimes called infrared light, is electromagnetic radiation (EMR) with wavelengths longer than those of visible light. It is therefore invisible to the human eye. IR is generally understood to encompass wavelengths from around ...
LED A light-emitting diode (LED) is a semiconductor Electronics, device that Light#Light sources, emits light when Electric current, current flows through it. Electrons in the semiconductor recombine with electron holes, releasing energy i ...
s and
lasers A laser is a device that emits light through a process of optical amplification based on the stimulated emission of electromagnetic radiation. The word "laser" is an acronym for "light amplification by stimulated emission of radiation". The fir ...
and
transistors upright=1.4, gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (pink). A transistor is a semiconductor device used to Electronic amplifier, amplify or electronic switch, switch e ...
, and
thermophotovoltaic Thermophotovoltaic (TPV) energy conversion is a direct conversion process from heat to electricity via photons. A basic thermophotovoltaic system consists of a hot object emitting thermal radiation and a photovoltaic cell similar to a solar cell b ...
systems.


See also

*
Aluminium antimonide Aluminium antimonide (AlSb) is a semiconductor of the group III-V family containing aluminium and antimony. The lattice constant is 0.61 nm. The indirect bandgap is approximately 1.6 eV at 300 K, whereas the direct band gap is 2.22 eV. Its ...
*
Indium antimonide Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow- gap semiconductor material from the III- V group used in infrared detectors, including thermal imaging cameras, FLIR systems ...
*
Gallium arsenide Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a Zincblende (crystal structure), zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monoli ...


References


External links


properties listed at NSM
Ioffe Institute.
National Compound Semiconductor Roadmap
at the
Office of Naval Research The Office of Naval Research (ONR) is an organization within the United States Department of the Navy responsible for the science and technology programs of the U.S. Navy and Marine Corps. Established by Congress in 1946, its mission is to plan ...
III-V semiconductors Gallium compounds Antimonides III-V compounds Zincblende crystal structure {{material-stub