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Indium Antimonide
Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow- gap semiconductor material from the III- V group used in infrared detectors, including thermal imaging cameras, FLIR systems, infrared homing missile guidance systems, and in infrared astronomy. The indium antimonide detectors are sensitive between 1–5 μm wavelengths. Indium antimonide was a very common detector in the old, single-detector mechanically scanned thermal imaging systems. Another application is as a terahertz radiation source as it is a strong photo-Dember emitter. History The intermetallic compound was first reported by Liu and Peretti in 1951, who gave its homogeneity range, structure type, and lattice constant. Polycrystalline ingots of InSb were prepared by Heinrich Welker in 1952, although they were not very pure by today's semiconductor standards. Welker was interested in systematically studying the semiconducting properties of t ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Zincblende (crystal Structure)
In crystallography, the cubic (or isometric) crystal system is a crystal system where the Crystal_structure#Unit_cell, unit cell is in the shape of a cube. This is one of the most common and simplest shapes found in crystals and minerals. There are three main varieties of these crystals: *Primitive cubic (abbreviated ''cP'' and alternatively called simple cubic) *Body-centered cubic (abbreviated ''cI'' or bcc) *Face-centered cubic (abbreviated ''cF'' or fcc, and alternatively called Close-packing_of_equal_spheres, ''cubic close-packed'' or ccp) Each is subdivided into other variants listed below. Although the ''unit cells'' in these crystals are conventionally taken to be cubes, the primitive_cell, primitive unit cells often are not. Bravais lattices The three Bravais lattices in the cubic crystal system are: The primitive cubic lattice (cP) consists of one Lattice_(group), lattice point on each corner of the cube; this means each simple cubic unit cell has in total one latt ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Missile Guidance
Missile guidance refers to a variety of methods of guiding a missile or a guided bomb to its intended target. The missile's target accuracy is a critical factor for its effectiveness. Guidance systems improve missile accuracy by improving its Probability of Guidance (Pg). These guidance technologies can generally be divided up into a number of categories, with the broadest categories being "active", "passive", and "preset" guidance. Missiles and guided bombs generally use similar types of guidance system, the difference between the two being that missiles are powered by an onboard engine, whereas guided bombs rely on the speed and height of the launch aircraft for propulsion. History The concept of unmanned guidance originated at least as early as World War I, with the idea of remotely guiding an airplane bomb onto a target, such as the systems developed for the R.F.C. World War I Drone Weapons, first powered drones by Archibald Low (The Father of Radio Guidance). In World War ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Drift Velocity
In physics, a drift velocity is the average velocity attained by charged particles, such as electrons, in a material due to an electric field. In general, an electron in a conductor will propagate randomly at the Fermi velocity, resulting in an average velocity of zero. Applying an electric field adds to this random motion a small net flow in one direction; this is the drift. Drift velocity is proportional to current. In a resistive material, it is also proportional to the magnitude of an external electric field. Thus Ohm's law can be explained in terms of drift velocity. The law's most elementary expression is: : u= \mu E , where is drift velocity, is the material's electron mobility, and is the electric field. In the MKS system, these quantities' units are m/s, m2/( V·s), and V/m, respectively. When a potential difference is applied across a conductor, free electrons gain velocity in the direction, opposite to the electric field between successive collisions (and lose ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electron Mobility
In solid-state physics, the electron mobility characterises how quickly an electron can move through a metal or semiconductor when pulled by an electric field. There is an analogous quantity for holes, called hole mobility. The term carrier mobility refers in general to both electron and hole mobility. Electron and hole mobility are special cases of electrical mobility of charged particles in a fluid under an applied electric field. When an electric field ''E'' is applied across a piece of material, the electrons respond by moving with an average velocity called the drift velocity, v_d. Then the electron mobility ''μ'' is defined as v_d = \mu E. Electron mobility is almost always specified in units of cm2/( V⋅ s). This is different from the SI unit of mobility, m2/( V⋅ s). They are related by 1 m2/(V⋅s) = 104 cm2/(V⋅s). Conductivity is proportional to the product of mobility and carrier concentration. For example, the same conductivity could come from a small numbe ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Doping (semiconductor)
In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be ''low'' or ''light''. When many more dopant atoms are added, on the order of one per ten thousand atoms, the doping is referred to as ''high'' or ''heavy''. This is often shown as ''n+'' for n-type doping or ''p+'' for p-type doping. (''See the article on semiconductors for a more detailed description of the doping mechanism.'') A semiconductor doped to such high levels that it acts more like a conductor than a semiconductor is referred to as a degenerate semiconductor. A semiconductor can be considered i-type semiconductor if it has ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Kelvin
The kelvin, symbol K, is the primary unit of temperature in the International System of Units (SI), used alongside its prefixed forms and the degree Celsius. It is named after the Belfast-born and University of Glasgow-based engineer and physicist William Thomson, 1st Baron Kelvin (1824–1907). The Kelvin scale is an absolute thermodynamic temperature scale, meaning it uses absolute zero as its null (zero) point. Historically, the Kelvin scale was developed by shifting the starting point of the much-older Celsius scale down from the melting point of water to absolute zero, and its increments still closely approximate the historic definition of a degree Celsius, but since 2019 the scale has been defined by fixing the Boltzmann constant to be exactly . Hence, one kelvin is equal to a change in the thermodynamic temperature that results in a change of thermal energy by . The temperature in degree Celsius is now defined as the temperature in kelvins minus 273.15, meaning t ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Electronvolt
In physics, an electronvolt (symbol eV, also written electron-volt and electron volt) is the measure of an amount of kinetic energy In physics, the kinetic energy of an object is the energy that it possesses due to its motion. It is defined as the work needed to accelerate a body of a given mass from rest to its stated velocity. Having gained this energy during its acc ... gained by a single electron accelerating from rest through an Voltage, electric potential difference of one volt in vacuum. When used as a Units of energy, unit of energy, the numerical value of 1 eV in joules (symbol J) is equivalent to the numerical value of the Electric charge, charge of an electron in coulombs (symbol C). Under the 2019 redefinition of the SI base units, this sets 1 eV equal to the exact value Historically, the electronvolt was devised as a standard unit of measure through its usefulness in Particle accelerator#Electrostatic particle accelerators, electrostatic particle accel ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Band Gap
In solid-state physics, a band gap, also called an energy gap, is an energy range in a solid where no electronic states can exist. In graphs of the electronic band structure of solids, the band gap generally refers to the energy difference (in electron volts) between the top of the valence band and the bottom of the conduction band in insulators and semiconductors. It is the energy required to promote a valence electron bound to an atom to become a conduction electron, which is free to move within the crystal lattice and serve as a charge carrier to conduct electric current. It is closely related to the HOMO/LUMO gap in chemistry. If the valence band is completely full and the conduction band is completely empty, then electrons cannot move within the solid because there are no available states. If the electrons are not free to move within the crystal lattice, then there is no generated current due to no net charge carrier mobility. However, if some electrons transfer from th ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Lattice Constant
A lattice constant or lattice parameter is one of the physical dimensions and angles that determine the geometry of the unit cells in a crystal lattice, and is proportional to the distance between atoms in the crystal. A simple cubic crystal has only one lattice constant, the distance between atoms, but in general lattices in three dimensions have six lattice constants: the lengths ''a'', ''b'', and ''c'' of the three cell edges meeting at a vertex, and the angles ''α'', ''β'', and ''γ'' between those edges. The crystal lattice parameters ''a'', ''b'', and ''c'' have the dimension of length. The three numbers represent the size of the unit cell, that is, the distance from a given atom to an identical atom in the same position and orientation in a neighboring cell (except for very simple crystal structures, this will not necessarily be disance to the nearest neighbor). Their SI unit is the meter, and they are traditionally specified in angstroms (Å); an angstrom being 0.1 nanome ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Crystal Structure
In crystallography, crystal structure is a description of the ordered arrangement of atoms, ions or molecules in a crystal, crystalline material. Ordered structures occur from the intrinsic nature of the constituent particles to form symmetric patterns that repeat along the principal directions of Three-dimensional space (mathematics), three-dimensional space in matter. The smallest group of particles in the material that constitutes this repeating pattern is the unit cell of the structure. The unit cell completely reflects the symmetry and structure of the entire crystal, which is built up by repetitive Translation (geometry), translation of the unit cell along its principal axes. The translation vectors define the nodes of the Bravais lattice. The lengths of the principal axes, or edges, of the unit cell and the angles between them are the lattice constants, also called ''lattice parameters'' or ''cell parameters''. The symmetry properties of the crystal are described by the con ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Antimony Trioxide
Antimony(III) oxide is the inorganic compound with the formula Sb2O3. It is the most important commercial compound of antimony. It is found in nature as the minerals valentinite and senarmontite. Like most polymeric oxides, Sb2O3 dissolves in aqueous solutions with hydrolysis. A mixed arsenic-antimony oxide occurs in nature as the very rare mineral stibioclaudetite. Production and properties Global production of antimony(III) oxide in 2012 was 130,000 tonnes, an increase from 112,600 tonnes in 2002. China produces the largest share followed by US/Mexico, Europe, Japan and South Africa and other countries (2%). As of 2010, antimony(III) oxide was produced at four sites in EU27. It is produced via two routes, re-volatilizing of crude antimony(III) oxide and by oxidation of antimony metal. Oxidation of antimony metal dominates in Europe. Several processes for the production of crude antimony(III) oxide or metallic antimony from virgin material. The choice of process depends on th ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
Heinrich Welker
Heinrich Johann Welker (9 September 1912 in Ingolstadt – 25 December 1981 in Erlangen) was a German theoretical and applied physicist who invented the "transistron", a transistor made at Westinghouse independently of the first successful transistor made at Bell Laboratories. He did fundamental work in III-V compound semiconductors, and paved the way for microwave semiconductor elements and laser diodes. Biography and important work Starting in 1931, Welker studied at the University of Munich under Arnold Sommerfeld, and was granted a Ph.D. in 1936. The book '' Electrodynamics - Lectures on Theoretical Physics Volume III'' by Sommerfeld was based on lecture notes prepared by Welker during the winter semester of 1933/1934. Welker was granted his Habilitation under Sommerfeld in 1939.Mehra, Volume 6, Part 2, 2001, p. 868. During the war years, 1940 to 1945, Welker worked at Luftfunkforschungs Institut in Oberpfaffenhofen, but still maintained association (1942 to 1944) with the ... [...More Info...] [...Related Items...] OR: [Wikipedia] [Google] [Baidu] |
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